Assignment 1

SILVACO LAB ASSIGNMENT 1SUBMITTED BY:M.CHANDRAKANTH(EE12M1022) P.SREEVIVAS REDDY(EE12P1007)

CODE FOR PN DIODE WITH P TYPE DOSE OF 1E15:

go athena# line x loc=0.00 spac=10line x loc=25 spac=1line x loc=75 spac=0.1line x loc=125 spac=1line x loc=200 spac=10#line y loc=0.00 spac=1line y loc=1 spac=0.1line y loc=5 spac=10# ntype waferinit silicon c.phosphor=1.0e15 orientation=100 two.d# deposition of oxidedeposit oxide thick=0.5

# pregionetch oxide start x=25 y=-0.5etch cont x=25 y=0etch cont x=75 y=0etch done x=75 y=-0.5# pdiffusiondiffus time=42.22 temp=1296.72 nitro press=1.00 c.boron=1e15#extract name="pregion depth" xj material="Silicon" mat.occno=1 x.val=50 \ junc.occno=1

# etch oxide all

# deposition of oxy nitridedeposit oxynitride thick=0.2

# for metal petch oxynitride start x=25 y=0.1etch cont x=50 y=-0.2etch cont x=175 y=-0.2etch done x=200 y=0.1

# for metal netch oxynitride start x=175 y=0.1etch cont x=175 y=-0.2etch cont x=200 y=-0.2etch done x=200 y=0.1

# deposition of aldeposit aluminum thick=0.2

# for metal netch aluminum above p1.y=-0.2extract name="pregion depth" xj material="Silicon" mat.occno=1 x.val=50\ junc.occno=1tonyplotstopelectrode name=anode x=40electrode name=cathode x=190

go atlas

# set material modelsmodels cvt srh print numcarr=2

method gummel newtonsolve initsolve vcathode=0 outf=solve_tmp1

#load in temporary files and ramp Vdsload infile=solve_tmp1log outfile=question1.logsolve name=anode vanode=-2 vfinal=3.3 vstep=0.05

tonyplot question1.log -set question1_log.set

extract name="CUTIN VOLTAGE" xintercept(maxslope(curve(v."anode",i."anode")))

stop

A)SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=25 AND 50,175,200 SHOWING 1UM P-DEPTH,P-DOSE=1E15

CALCULATIONS: JUNCTION DEPTH=1.14UM CUTIN VOLTAGE=1.43V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 0.64umDIFFUSION TIME:42.67MINDIFFUSION TEMP:1296PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

B) SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 1UM P-DEPTH,P-DOSE=1E15

CALCULATIONS: JUNCTION DEPTH=1.14UM CUTIN VOLTAGE=1.234V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 0.64DIFFUSION TIME:42.67MINDIFFUSION TEMP:1296PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

C) SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=25 AND 50,175,200 SHOWING 1UM P-DEPTH,P-DOSE=1E16

CALCULATIONS: JUNCTION DEPTH=1.0183UM CUTIN VOLTAGE=1.43V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 0.0854UMDIFFUSION TIME:37.67MINDIFFUSION TEMP:1130PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

D) SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 1UM P-DEPTH,P-DOSE=1E16

CALCULATIONS: JUNCTION DEPTH=1.01253UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.19E-12 YMIN= 0.0854UMDIFFUSION TIME:37.67MINDIFFUSION TEMP:1130PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

E) SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 1UM P-DEPTH,P-DOSE=1E17

CALCULATIONS: JUNCTION DEPTH=1.1253UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 9.51NMDIFFUSION TIME:36.67MIN

DIFFUSION TEMP:1144PRESSURE:1ATM

I-V CHARECTERISTICS OF THE DIODE

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)

F) SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=25 AND 50,175,200 SHOWING 1UM P-DEPTH,P-DOSE=1E17

CALCULATIONS: JUNCTION DEPTH=1.1253UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.2E-12 YMIN= 9.51NMDIFFUSION TIME:36.67MINDIFFUSION TEMP:1144PRESSURE:1ATM

NOTE:PLOTS OF I-V CHARECTERISTICS AND REVERSE SATURATION CURRENTS ARE SAME AS ABOVE WITH METAL CONTACTS AT 37.5 AND 50,100 AND125

G) SNAP SHOT OF PN DIODE STRUCTURE WITH METAL CONTACTS AT X=37.5 AND 62.5,100,125 SHOWING 2*YMIN(YMIN=0.645UM) P-DEPTH,P-DOSE=1E15

CALCULATIONS: JUNCTION DEPTH=1.2UM CUTIN VOLTAGE=1.4362V REVERSE SATURATION CURRENT:1.1958E-12 YMIN= 0.645UMDIFFUSION TIME:44MINDIFFUSION TEMP:1315PRESSURE:1ATM

I-V CURVE:

GRAPH SHOWING THE REVERSE SATURATION CURRENT :(ZOOM VERSION OF THE PREVIOUS GRAPH)