Department of Electronics Advanced Information Storage Practical 02 Atsufumi Hirohata 10:00 15/November/2013 Friday (P/Z 011) Contents of Advanced Information Storage Practicals : (1/2 marks in your mark) Analysis on magnetic & solid-state storages [Weeks 2 ~ 5, 10:00 ~ 12:00 Fri. (York JEOL Nanocentre), Weeks 6 ~ 10, 10:00 ~ 12:00 Fri. (P/Z 011)] Laboratory report to be handed-in to the General Office (Week 10). Continuous Assessment : (1/2 marks in your mark) Assignment to be handed-in to the General Office (Week 7). Demonstrator : Shuo Zhao
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Advanced Information Storage Practical 02 - University of Yorkah566/lectures/adv_pract2.pdf · 13/11/14 1 Department of Electronics Advanced Information Storage Practical 02 Atsufumi
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13/11/14
1
Department of Electronics
Advanced Information Storage Practical 02
Atsufumi Hirohata
10:00 15/November/2013 Friday (P/Z 011)
Contents of Advanced Information Storage
Practicals : (1/2 marks in your mark) Analysis on magnetic & solid-state storages [Weeks 2 ~ 5, 10:00 ~ 12:00 Fri. (York JEOL Nanocentre), Weeks 6 ~ 10, 10:00 ~ 12:00 Fri. (P/Z 011)] Laboratory report to be handed-in to the General Office (Week 10).
Continuous Assessment : (1/2 marks in your mark) Assignment to be handed-in to the General Office (Week 7).
Demonstrator : Shuo Zhao
13/11/14
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NAND Flash Memory In 1986, Fujio Masuoka invented a NAND-type flash memory :
* http://www.wikipedia.org/
High writing speed �
Ideal for integration�
× No 1 byte high-speed read-out
× Flash erase for a unit block ( 1 ~ 10 kbyte ) only !�