Department of Electronics Semiconductor Devices 27 Atsufumi Hirohata 11:00 Thursday, 4/December/2014 (P/T 005) Exercise 6 Calculate the depletion layer capacity at a reverse bias V R = 0.5 V in a Au/n-Si Schottky diode. Assume the following parameters: Au work function: φ M = 4.80 eV n-region: doping density of N D = 1 × 10 21 m -3 Si electron affinity: χ = 4.05 eV Si Fermi level: E F = E C – 0.15 eV permittivity: ε = ε × ε 0 = 12.0 × 8.854 × 10 -12 F/m and q = 1.6 × 10 -19 C. q(V bi + V R ) Depletion layer E F qV R E C E V
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Department of Electronics
Semiconductor Devices 27
Atsufumi Hirohata
11:00 Thursday, 4/December/2014 (P/T 005)
Exercise 6
Calculate the depletion layer capacity at a reverse bias
VR = 0.5 V in a Au/n-Si Schottky diode. Assume the