RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen
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© 2014
Copyrights © Yole Développement SA. All rights reserved.
GaN RF Market Analysis’ 14
From defence to mainstream applications…
Applications, players, devices & substrates 2010 - 2020
Nitronex
75 cours Emile Zola, F-69001 Lyon-Villeurbanne, France
Tel : +33 472 83 01 80 - Fax : +33 472 83 01 83
Web: http://www.yole.fr
© 2014• 2
Executive Summary
Market Landscape
30 %
Executive Summary
© 2014• 3
Why so many mergers and acquisitions?
• The RF industry is changing recently (2014) due to several recent mergers and acquisitions depicted
below.
Market anakysis
• Mergers and acquisitions concern overall RF market either Si-LDMOS or GaAs or GaN based devices –
Companies try to gain scale to increase profitability which has been declining or stagnating in several
applications – We expect those activities will mainly affect commercial wireless telecom and defense
applications.
• The RF market is going towards compressed integration. Suppliers will have to reach high level of mass
production.
© 2014• 4
Data broadcastDefenseWireless Communication
Applications for GaN devices in RF electronic
systems
3G / 4G BTS
(0.8 – 2.7 GHz)
Long Term
Evolution
0.7 – 2.6 GHz
Radars, guided missiles,
countermeasure, …
(2-4 to 8-12 GHz)
V-SAT
(12 – 40 GHz)
700 MHz 5 GHz 8 GHz 40 GHz
Si LDMOS GaAs pHEMT, HBT, SiGe or vacuum tubes
2 GHz
CATV
(< 1GHz)
SatCom
(13 – 14 GHz)
12 GHz
2.3 – 5 GHz
Market anakysis
© 2014• 5
Technology drivers and figure of merit for GaNHigh Frequency, High Power and Linearity
Using this simplified figure-of-merit, SatCom, Defense and …..
…….
……..
……
Market anakysis
© 2014• 6
GaN device applications roadmapTime to market
Market anakysis
© 2014• 7
GaN RF device market breakdown2013 - 2020 comparison by application (Nominal scenario)
2013
TOTAL~ $ XXX M
©2014Yole Développement
2020
TOTAL$ XXX M
©2014Yole Développement
CAGR + XX %
• In 2013, GaN market is still mostly driven by DOD or DARPA funding in the US and ESA R&D contract in Europe. R&D
projects and technology improvement in xx & xx represented about XX% of the GaN RF business….
• ……..
• ………
• …….
Market anakysis
© 2014• 8
2010-2020 GaN RF device market size
Nominal scenario
Market anakysis
© 2014• 9
State-of-the-art comparison of GaN-on-Si high
power RF transistors in 2014
Source: Kumud Ranjan et al, Appl. Phys. Express, vol7, p044102, 2014
GaN HEMT overview
• The Johnson’s FOM is defined as the product
of the unity current gain cut-off frequency and
the off-state breakdown gate-drain voltage
(fTxBVgd). The J-FOM is designed to reflect
the needs of high-power microwave devices.
© 2014• 10
GaN / SiC / Si / GaAs high power RF
transistors comparison
GaN HEMT overview
Source: OKI Semiconductors
SiC Si
GaAs-HEMT
GaN-HEMT
• This spider diagram shows a comparison of
the devices based on the material
performance and figure of merit (FM) in view
of the high frequency and power devices:
© 2014• 11
Examples of available offers in Power RF GaN
devices in 2014
GaN HEMT
Main applicationsFrequency
Band
Pout max
(W)
Voltages
(V)Company
General Purpose VHF/UHF AmplifiersWCDMA and LTE applicationsMilitary Communications Commercial Wireless Infrastructure Public Mobile Radios
VHF
UHF
Long-distance radio
telecommunicationsC
Weather radar, surface ship radar, and
some communications satellitesS
satellite communications, radar,
terrestrial broadband, space
communications, amateur radio
X
Military telemetry, GPS, mobile phones
(GSM), amateur radioL
Radar, satellite communications,
astronomical observations, automotive
radar
K
Satellite communications
Satellite communications
Ku
Ka
Wide frequency range devicesS + C + X
S+C
© 2014• 12
Tentative cost breakdown of
HEMT process GaN/Si (6”)
from substrate to devices
Epi-ready wafers
6” S.I. HR Silicon wafer :
$XX
SiC epi-wafers
6” HEMT epi-wafer:
$XX
Processed wafer
Discrete
devices
Packaging
& tests
6” HEMT: $XX
~ XX HEMT
yielded: $XX
Device cost
~ $XX/ HEMT
Epitaxy
GaN HEMT
Front-end
Process
© 2014• 13
Most dangerous GaN on Si competitor at short and mi-term (1-5 years)
GaN-on-SiC GaN-on-GaN GaN-on-Si GaN-on-Diamond
Chance of Success
Main reason of the competition
Most probable applications
GaN-on-XX: Technology comparisonIs there a place for GaN-on-Si and GaN-on-Diamond based RF
Power devices ?
GaN substrates overview
• GaN-on-SiC would still probably keep its lead in xx yy applications especially xx applications.
• The emerging GaN on XX is going to be really costly and only good for the xx applications that can
afford it.
© 2014• 14
Known Semi Insulating Substrates Players
(1/2)
Country Substrate Size Resitivity Thickness
Company 1 PL Bulk GaN 10 x 10 mm2, 1′′, 1.5′′ 109 - 1012 Ω.cm NA
Company 2 US SiC 4” > 1010 Ω.cm 1.4 µm
Company 3 BE SiC 3”, 4” 2 µm
Silicon 6” 2 µm
Company 4 GE SiC 3” 1010 Ω.cm 1.8 µm
FS GaN 2” 4 X 108 Ω.cm 30 µm.
Company 5 JP FS GaN 108 Ω.cm
Company 6 US Sapphire 2”, 3”, 4” 106 -109 Ω.cm 5 µm
Bulk GaN
10mm x 10mm 18mm
x 18mm
30mm round diameter
> 106 Ω.cm475 µm (± 25
µm)
Company 7 US SiC 6” NA NA
Company 8 FR Sapphire 2” / Max 4 µm
Company 9 US Sapphire 2” > 106 Ω.cm20 µm, (+/-
10%)
GaN substrates overview
© 2014• 15
Executive Summary
Tentative forecast for RF GaN epiwafer market size 2010 – 2020
(“Nominal” scenario)
Hypothesis:
- XX and XX substrates
- ASP: ~ $XX in 2013 with XX% annual erosion
Based on “Nominal” scenario
Tentative forecast for RF GaN epiwafer market size 2010 – 2020
Executive Summary
© 2014• 17
Mapping: Foundries of Power RF GaN based devices
in US
30 %
RF GaN supply-chain
• U.S. companies continue to enlarge product portfolios to reach new applications such as Telecom, Satcom
and Point-to-point Radio.
© 2014• 18
RF GaN Tentative Industrial supply-chain in the US
Core technology:
GaAs pHEMT or Si LDMOSS.I SiC wafers GaN HEMT epiwafers BTS
Silicon
SiC, Sapphire
Military
SiC,Silicon
SiC
SiC
SiC
SiC
RF GaN supply-chain
Material providers Devices foundries SystemsPA Modules
Paradise Datacom
SiC, Silicon
SiC
SiC, sapphire, bulk-GaN
anti submarine
warfare
commander
(AWSC)
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