© 2014 Copyrights © Yole Développement SA. All rights reserved. GaN RF Market Analysis’ 14 From defence to mainstream applications… Applications, players, devices & substrates 2010 - 2020 Nitronex 75 cours Emile Zola, F-69001 Lyon-Villeurbanne, France Tel : +33 472 83 01 80 - Fax : +33 472 83 01 83 Web: http://www.yole.fr
RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen
Jan 15, 2015
RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2010-2020
Will GaN-on-Si introduction help to capture more market share than Si-LDMOS?
IS IT POSSIBLE FOR GAN TO REACH MORE MAINSTREAM APPLICATIONS UNDER 3.5GHZ?
Today, the need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications.
More power, more frequency bands, better linearity and improved efficiency are still driving RF semiconductor devices’ current development, since the market needs devices able to handle all of these specifications at a reasonable price.
Recent mergers and acquisitions are a concern for the overall RF market and Si-LDMOS, GaAs and GaN-based devices. The overall RF market doesn’t seem big enough for so many players; as a result, companies are trying to gain scale in order to increase profitability, which has stagnated. We expect that commercial wireless telecom, CATV and defense applications will be the main applications affected.
Although significant improvements have been achieved in RF GaN-based devices (performance and yields), Yole Développement believes there’s still a barrier preventing GaN-on-SiC from entering mainstream applications (i.e. in wireless telecom base stations or CATV). In sub-3.5 GHz range applications, GaN-on-SiC is not cost-effective enough vs. Si-LDMOS, resulting in low market penetration rates. Macom and IQE believe they will enter mass production using 6” and 8” GaN-on-Si substrates in two years. IQE will offer Macom a significant mass production level due to its existing production for other applications. Our analysis shows that GaN-on-Si could be implemented in 2 - 5 years within telecom base stations, Milcomm & CATV. In this optimistic scenario, RF GaN-based devices could see an increased penetration rate and reach more than 20 % of the overall RF device market by 2020.
This report is providing all the analysis on the applications, technical challenges and strategic initiatives related to the implementation of RF GaN for volume production.
FROM DEFENSE TO MAINSTREAM APPLICATIONS - RF GAN TECHNOLOGY CONTINUES TO BE ADOPTED FOR COMMERCIAL APPLICATIONS
Over the last several years, the silicon LDMOS coverage of high-power RF amplification applications in the 2GHz+ frequency range has decreased from 92% to 76%; the remaining 24% market share is mainly addressed by technologies such as GaAs pHEMT or HEMTs GaN. This equilibrium continues to be turned around by GaN HEMTs implementation. GaN HEMTs in wireless telecommunications is a higher-power and higher-frequency transistors alternative. From a system point of view, GaN is cost-competitive in applications over 3.5GHz...
More information on that report at http://www.i-micronews.com/reports/RF-GaN-Market-Analysis-Applications-Players-Devices/3/438/
Will GaN-on-Si introduction help to capture more market share than Si-LDMOS?
IS IT POSSIBLE FOR GAN TO REACH MORE MAINSTREAM APPLICATIONS UNDER 3.5GHZ?
Today, the need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications.
More power, more frequency bands, better linearity and improved efficiency are still driving RF semiconductor devices’ current development, since the market needs devices able to handle all of these specifications at a reasonable price.
Recent mergers and acquisitions are a concern for the overall RF market and Si-LDMOS, GaAs and GaN-based devices. The overall RF market doesn’t seem big enough for so many players; as a result, companies are trying to gain scale in order to increase profitability, which has stagnated. We expect that commercial wireless telecom, CATV and defense applications will be the main applications affected.
Although significant improvements have been achieved in RF GaN-based devices (performance and yields), Yole Développement believes there’s still a barrier preventing GaN-on-SiC from entering mainstream applications (i.e. in wireless telecom base stations or CATV). In sub-3.5 GHz range applications, GaN-on-SiC is not cost-effective enough vs. Si-LDMOS, resulting in low market penetration rates. Macom and IQE believe they will enter mass production using 6” and 8” GaN-on-Si substrates in two years. IQE will offer Macom a significant mass production level due to its existing production for other applications. Our analysis shows that GaN-on-Si could be implemented in 2 - 5 years within telecom base stations, Milcomm & CATV. In this optimistic scenario, RF GaN-based devices could see an increased penetration rate and reach more than 20 % of the overall RF device market by 2020.
This report is providing all the analysis on the applications, technical challenges and strategic initiatives related to the implementation of RF GaN for volume production.
FROM DEFENSE TO MAINSTREAM APPLICATIONS - RF GAN TECHNOLOGY CONTINUES TO BE ADOPTED FOR COMMERCIAL APPLICATIONS
Over the last several years, the silicon LDMOS coverage of high-power RF amplification applications in the 2GHz+ frequency range has decreased from 92% to 76%; the remaining 24% market share is mainly addressed by technologies such as GaAs pHEMT or HEMTs GaN. This equilibrium continues to be turned around by GaN HEMTs implementation. GaN HEMTs in wireless telecommunications is a higher-power and higher-frequency transistors alternative. From a system point of view, GaN is cost-competitive in applications over 3.5GHz...
More information on that report at http://www.i-micronews.com/reports/RF-GaN-Market-Analysis-Applications-Players-Devices/3/438/
Welcome message from author
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
© 2014
Copyrights © Yole Développement SA. All rights reserved.
GaN RF Market Analysis’ 14
From defence to mainstream applications…
Applications, players, devices & substrates 2010 - 2020
Nitronex
75 cours Emile Zola, F-69001 Lyon-Villeurbanne, France
Tel : +33 472 83 01 80 - Fax : +33 472 83 01 83
Web: http://www.yole.fr
© 2014• 2
Executive Summary
Market Landscape
30 %
Executive Summary
© 2014• 3
Why so many mergers and acquisitions?
• The RF industry is changing recently (2014) due to several recent mergers and acquisitions depicted
below.
Market anakysis
• Mergers and acquisitions concern overall RF market either Si-LDMOS or GaAs or GaN based devices –
Companies try to gain scale to increase profitability which has been declining or stagnating in several
applications – We expect those activities will mainly affect commercial wireless telecom and defense
applications.
• The RF market is going towards compressed integration. Suppliers will have to reach high level of mass
production.
© 2014• 4
Data broadcastDefenseWireless Communication
Applications for GaN devices in RF electronic
systems
3G / 4G BTS
(0.8 – 2.7 GHz)
Long Term
Evolution
0.7 – 2.6 GHz
Radars, guided missiles,
countermeasure, …
(2-4 to 8-12 GHz)
V-SAT
(12 – 40 GHz)
700 MHz 5 GHz 8 GHz 40 GHz
Si LDMOS GaAs pHEMT, HBT, SiGe or vacuum tubes
2 GHz
CATV
(< 1GHz)
SatCom
(13 – 14 GHz)
12 GHz
2.3 – 5 GHz
Market anakysis
© 2014• 5
Technology drivers and figure of merit for GaNHigh Frequency, High Power and Linearity
Using this simplified figure-of-merit, SatCom, Defense and …..
…….
……..
……
Market anakysis
© 2014• 6
GaN device applications roadmapTime to market
Market anakysis
© 2014• 7
GaN RF device market breakdown2013 - 2020 comparison by application (Nominal scenario)
2013
TOTAL~ $ XXX M
©2014Yole Développement
2020
TOTAL$ XXX M
©2014Yole Développement
CAGR + XX %
• In 2013, GaN market is still mostly driven by DOD or DARPA funding in the US and ESA R&D contract in Europe. R&D
projects and technology improvement in xx & xx represented about XX% of the GaN RF business….
• ……..
• ………
• …….
Market anakysis
© 2014• 8
2010-2020 GaN RF device market size
Nominal scenario
Market anakysis
© 2014• 9
State-of-the-art comparison of GaN-on-Si high
power RF transistors in 2014
Source: Kumud Ranjan et al, Appl. Phys. Express, vol7, p044102, 2014
GaN HEMT overview
• The Johnson’s FOM is defined as the product
of the unity current gain cut-off frequency and
the off-state breakdown gate-drain voltage
(fTxBVgd). The J-FOM is designed to reflect
the needs of high-power microwave devices.
© 2014• 10
GaN / SiC / Si / GaAs high power RF
transistors comparison
GaN HEMT overview
Source: OKI Semiconductors
SiC Si
GaAs-HEMT
GaN-HEMT
• This spider diagram shows a comparison of
the devices based on the material
performance and figure of merit (FM) in view
of the high frequency and power devices:
© 2014• 11
Examples of available offers in Power RF GaN
devices in 2014
GaN HEMT
Main applicationsFrequency
Band
Pout max
(W)
Voltages
(V)Company
General Purpose VHF/UHF AmplifiersWCDMA and LTE applicationsMilitary Communications Commercial Wireless Infrastructure Public Mobile Radios
VHF
UHF
Long-distance radio
telecommunicationsC
Weather radar, surface ship radar, and
some communications satellitesS
satellite communications, radar,
terrestrial broadband, space
communications, amateur radio
X
Military telemetry, GPS, mobile phones
(GSM), amateur radioL
Radar, satellite communications,
astronomical observations, automotive
radar
K
Satellite communications
Satellite communications
Ku
Ka
Wide frequency range devicesS + C + X
S+C
© 2014• 12
Tentative cost breakdown of
HEMT process GaN/Si (6”)
from substrate to devices
Epi-ready wafers
6” S.I. HR Silicon wafer :
$XX
SiC epi-wafers
6” HEMT epi-wafer:
$XX
Processed wafer
Discrete
devices
Packaging
& tests
6” HEMT: $XX
~ XX HEMT
yielded: $XX
Device cost
~ $XX/ HEMT
Epitaxy
GaN HEMT
Front-end
Process
© 2014• 13
Most dangerous GaN on Si competitor at short and mi-term (1-5 years)
GaN-on-SiC GaN-on-GaN GaN-on-Si GaN-on-Diamond
Chance of Success
Main reason of the competition
Most probable applications
GaN-on-XX: Technology comparisonIs there a place for GaN-on-Si and GaN-on-Diamond based RF
Power devices ?
GaN substrates overview
• GaN-on-SiC would still probably keep its lead in xx yy applications especially xx applications.
• The emerging GaN on XX is going to be really costly and only good for the xx applications that can
afford it.
© 2014• 14
Known Semi Insulating Substrates Players
(1/2)
Country Substrate Size Resitivity Thickness
Company 1 PL Bulk GaN 10 x 10 mm2, 1′′, 1.5′′ 109 - 1012 Ω.cm NA
Company 2 US SiC 4” > 1010 Ω.cm 1.4 µm
Company 3 BE SiC 3”, 4” 2 µm
Silicon 6” 2 µm
Company 4 GE SiC 3” 1010 Ω.cm 1.8 µm
FS GaN 2” 4 X 108 Ω.cm 30 µm.
Company 5 JP FS GaN 108 Ω.cm
Company 6 US Sapphire 2”, 3”, 4” 106 -109 Ω.cm 5 µm
Bulk GaN
10mm x 10mm 18mm
x 18mm
30mm round diameter
> 106 Ω.cm475 µm (± 25
µm)
Company 7 US SiC 6” NA NA
Company 8 FR Sapphire 2” / Max 4 µm
Company 9 US Sapphire 2” > 106 Ω.cm20 µm, (+/-
10%)
GaN substrates overview
© 2014• 15
Executive Summary
Tentative forecast for RF GaN epiwafer market size 2010 – 2020
(“Nominal” scenario)
Hypothesis:
- XX and XX substrates
- ASP: ~ $XX in 2013 with XX% annual erosion
Based on “Nominal” scenario
Tentative forecast for RF GaN epiwafer market size 2010 – 2020
Executive Summary
© 2014• 17
Mapping: Foundries of Power RF GaN based devices
in US
30 %
RF GaN supply-chain
• U.S. companies continue to enlarge product portfolios to reach new applications such as Telecom, Satcom
and Point-to-point Radio.
© 2014• 18
RF GaN Tentative Industrial supply-chain in the US
Core technology:
GaAs pHEMT or Si LDMOSS.I SiC wafers GaN HEMT epiwafers BTS
Silicon
SiC, Sapphire
Military
SiC,Silicon
SiC
SiC
SiC
SiC
RF GaN supply-chain
Material providers Devices foundries SystemsPA Modules
Paradise Datacom
SiC, Silicon
SiC
SiC, sapphire, bulk-GaN
anti submarine
warfare
commander
(AWSC)
ORDER FORMRF GaN Technology & Market Analysis
SHIPPING CONTACT
First Name:
Email:
Last Name:
Phone:
PAYMENTBY CREDIT CARD Visa Mastercard Amex
Name of the Card Holder:
Credit Card Number:
Card Verification Value (3 digits except AMEX: 4 digits):
Expiration date:
BY BANK TRANSFERBANK INFO: HSBC, 1 place de la Bourse, F-69002 Lyon, France, Bank code: 30056, Branch code : 00170Account No: 0170 200 1565 87, SWIFT or BIC code: CCFRFRPP, IBAN: FR76 3005 6001 7001 7020 0156 587
RETURN ORDER BY • FAX: +33 (0)472 83 01 83• MAIL: YOLE DÉVELOPPEMENT, Le Quartz,
75 Cours Emile Zola, 69100 Villeurbanne/Lyon - France
SALES CONTACTS • North America: David Jourdan - [email protected]• Asia: Takashi Onozawa - [email protected] • Europe & RoW: Jean-Christophe Eloy - [email protected]• Korea: Hailey Yang - [email protected] • General: [email protected]
(1) Our Terms and Conditions of Sale are available at www.yole.fr/Terms_and_Conditions_of_Sale.aspx The present document is valid 24 months after its publishing date: May 26th, 2014
/
ABOUT YOLE DEVELOPPEMENT
BILL TOName (Mr/Ms/Dr/Pr):
Job Title:
Company:
Address:
City:
State:
Postcode/Zip:
Country*:
*VAT ID Number for EU members:
Tel:
Email:
Date:
PRODUCT ORDERPlease enter my order for above named report : One user license*: Euro 3,990 Multi user license: Euro 5,990For price in dollars, please use the day’s exchange rate. All reports are delivered electronically at payment reception. For French customers, add 20% for VAT I hereby accept Yole Développement’s Terms and Conditions of Sale(1)
Signature:
*One user license means only one person at the company can use the report. Please be aware that our publication will be watermarked on each page with the name of the recipient and of the organization (the name mentioned on the PO). This watermark will also mention that the report sharing is not allowed.
Founded in 1998, Yole Développement has grown to become a group of companies providing marketing, technology and strategy consulting, media in addition to corporate finance services. With a strong focus on emerging applications using silicon and/or micro manufacturing (technology or process), Yole Développement group has expanded to include more than 50 associates worldwide covering MEMS, Compound Semiconductors, LED, Image Sensors, Optoelectronics, Microfluidics & Medical, Photovoltaics, Advanced Packaging, Manufacturing, Nanomaterials and Power Electronics. The group supports industrial companies, investors and R&D organizations worldwide to help them understand markets and follow technology trends to develop their business.
MEDIA & EVENTS• i-Micronews.com, online disruptive technologies website• @Micronews, weekly e-newsletter• Technology Magazines dedicated to MEMS, Advanced Packaging, LED and Power Electronics• Communication & webcasts services• Events: Yole Seminars, Market Briefings…More information on www.i-micronews.com
CONTACTSFor more information about :• Consulting Services: Jean-Christophe Eloy ([email protected])• Financial Services: Géraldine Andrieux-Gustin ([email protected])• Report Business: David Jourdan ([email protected])• Corporate Communication: Sandrine Leroy ([email protected])
CONSULTING• Market data & research, marketing analysis• Technology analysis• Reverse engineering & costing services• Strategy consulting• Patent analysisMore information on www.yole.fr
REPORTS• Collection of technology & market reports• Manufacturing cost simulation tools• Component reverse engineering & costing analysis• Patent investigationMore information on www.i-micronews.com/reports
FINANCIAL SERVICES• Mergers & Acquisitions• Due diligence• Fundraising• Coaching of emerging companies• IP portfolio management & optimizationMore information on www.yolefinance.com
Related Documents
