L ithography A nalysis using V irtual A ccess UC Berkeley TCAD Research 2000 1998 1997 Frank Gennari Toshihiro Horie Peter Chien Steve LeeTimothy JamesJefferey.

Lithography Analysis using Virtual Access

UC Berkeley TCAD Research

2000 1998 1997 Frank Gennari Toshihiro Horie Peter Chien Steve Lee Timothy James Jefferey

Cheng Elmo Pittenger Ran Shen Rona Yang Takashi Orimoto Vinson Lee Chang Hsu Ka Chun Ng

Andrew Neureuther

Sang Fix 2001

Motivation and Overview

• Avoid the hassle of • getting the right computer, • getting and licensing the software, and• installing and debugging the code

• Utilize the internet infrastructure• Application Oriented Applets• Internet Graphics• Horsepower of networks of workstations

When will I be able to use my

PDA?

ARN FIX

Phase-Shifting Mask Edge Effects

SPLAT Output

ADAM and SANG

Basic Aberration Applet

Submit to Splatsimulator

Select available mask patterns

Basic aberration applet Simulates 2D combinatorial aberration effects

Black and White VersionOf Intensity Output

Select aberrationsand adjust values

Default Splat Line Intensity Color OutputComparison of normal and aberrated intensity plots

Deposition and Metalization

Submit your parameters to the Sample2D simulator.

The output is plotted using DrawPlot.

• Various source and profile types including user-defined profiles.• Plans for a multistep processing applet.

Choose from various source types.

Etching and Pattern Transfer

• New, redesigned engine.

• Color coded etch rates.

• Predefined materials and profiles.

Customizable layers

Chemically-Amplified Resist Profile Sharpening

Takashi and Mike

Faster Tempest OutputJPEG Method:

-1s Load Time Over Ethernet

-30s Load Time Over 33.6 Modem

-Ability to save graphics

Java AWT Method:

-5m+ Load Time Over Ethernet

-20m+ Load Time Over 33.6 Modem

-Cannot save graphics

Line-End Shortening

Mosong FIX

Programmed-Probe AberrationTarget Applet

Select aberrationand adjust values

User-definedSplat Source Code

Select availablemask patterns

Adjust default mask parameters

Contour Plot OutputLine Intensity Output

Online SimulationUsers input data to be simulated and results are displayed with graphical plotters.

Example taken from our SAMPLE-3D simulator.

e-Beam Simulation Interface

Bo Make More self Explanatory

e-Beam and 3D Tempest

e-Beam 3D Tempest

Kostas and Yunfei

Visitors in Fall 00

Visits by organization typeVisits for 3 months

Summary

• Applets – Aberrations and Aberration Measurements

– Chemically-Amplified Resist Mechanism

– Line-End Shortening with CARS

– Phase Defects on PSM

– Electron-Beam Probe Formation

– Deposition and Metalization

– Etching and Pattern Transfer

• Graphics using JPEG with capture

• Links to Networks-of-Workstations

ARN FIX

Mask Editor

• Currently supports any number of rectangular regions

• Completely portable: can be reused in other applets

• Easily expandable

Ka Chun revisit?

e-Beam Simulatore-Beam simulates the acceleration of a large number of electrons towards a target and calculates the inter-electron forces and scattering as they travel.

SIMPL, SIMPL-DIX

• Decode SIMPLE-DIX and develop the interface for SIMPL.

• Crossing platforms from Unix to Windows.

• Erroneously prints in pink, black, and white.