Dr. Milan ROSINA Principal Analyst, Power Electronics ... · Foundry investment on MOCVD for Power GaN DC/DC+POL solution for data centers Automotive qualification GaN on their power
Post on 09-Jan-2020
15 Views
Preview:
Transcript
GaN and SiC power device: market overview
Dr. Milan ROSINA
Principal Analyst, Power Electronics & BatteriesYole Développement
2
TABLE OF CONTENT
• Power electronics market
• SiC• Power market
• Remaining challenges
• GaN• Power market
• Remaining challenges
• Conclusions
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
4
DRIVING POWER ELECTRONICS
• Efficient
• Cost
• Reliability
• Integration
• Manufacturing
• Supply chain
Needs
2018
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
5
POWER DEVICE MARKET
Looking forward: 2017-2023 by type of device
Modules and IPM market is expected to reach $5.5B by 2023
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018 *Module: IGBT, MOSFET and Bipolar devices that are sold as modules, not including rectifiers in that category
CAGR17-23: 3.9%
Modules & IPM: 7.6%
IGBT: 5.5%
X-FET: 2.9%
Bipolar: 2.0%
Thyristors: 1.0%
Rectifiers: 1.8%
CAGR 2017-2023
6
VOLTAGE LEVEL
Low voltage applications keep being the biggest market.
Market share
Total market: $ 15.4B
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
7
POWER VS FREQUENCY ON ELECTRONICS
Silicon Power device technology positioning (2018)Sw
itch
ing
pow
er
(W)
GaN HEMT
Planar
103
Thyr
isto
r
Si Bipolar
Operating frequency (Hz)
104 106105
AC adapters
103
102
101
100
Power
supplies for
servers
EV/HEV
Switching
power supplies
Audio
equipment
UPSRail
MOSFET
GridWind
PV
IGBT/IPM
Home
appliances
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
8
WIDE BAND GAP MATERIAL
Why WBG?
GaN is interesting for high-frequency switching and SiC for high temperature applications
1 The Tc for GaN is given here for typical GaN-on-Si. It has been demonstrated that the Tc of bulk GaN could reach four W/cm.°C2 The electrical field profile can also be controlled by the doping concentration
High T°
applications
High-frequency
switching
High-voltage
operation
1
2
7
3x higher bandgap of Si 10x
higher breakdown field
3x thermal conductivity of Si
Up to 1000x
lower Rdson
2x switching
speed
Size reduction: 1/10x
drift region for same
Vbd
Reduction of conduction
and switching loss
High temperature
operation
Low Rdson
Very fast switching
High frequency
operation
Compactness and
weight reduction
Reduction of conduction
and switching loss
3x higher bandgap of Si 14x
higher breakdown field
GaN SiC
Co(tr) of GaN device is ~10x
lower than SJ FET
Qrr >100x lower for
GaN devices
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
9
MOSFET
POWER VS FREQUENCY ON ELECTRONICS
Power device technology positioning (2018)Sw
itch
ing
pow
er
(W)
GaN HEMT
Planar
103
Thyr
isto
r
Si Bipolar
Operating frequency (Hz)
104 106105
AC adapters
103
102
101
100
Power
supplies for
servers
EV/HEV
Switching
power supplies
Audio
equipment
UPSRailGridWind
PV
IGBT/IPM
Home
appliances
GaN
SiC
MOSFET
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
10
KEY PLAYERS AND POWER ELECTRONICS LANDSCAPE
Main power electronics players involved in power WBG
IGBT SJ MOSFET SiC GaN
Extracted from the
report “Status of
Power Electronics
Industry 2018” from
Yole Développement
Power Electronics discrete and module revenues, 2017D
iodes
and/o
r Tra
nsi
stor
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
12
SiC POWER DEVICE TARGET APPLICATIONS OVERVIEW
SiC
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
13
Total
SiC POWER DEVICE MARKET REVENUE
Split by application
The total SiC-based power device market is expected to grow steadily, reaching more than $1.5B in 2023.
Including discrete diodes, discrete transistors, diode bare die in hybrid modules and full SiC modules.
EV/HEV: 76%
PFC: 10%
Rail: 105%
Charging infrastructure: 101%
Motor drives: 39%
PV: 11%
CAGR 2017-2023
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
14
OUTLOOK OVER 2022
Gradually towards a module dominating market
The transistors portion isincreasingand the module market willbecomemore and more important.
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
15
SIC POWER INDUSTRY - MAIN REMAINING CHALLENGES
From materials to system integration
Material
• High cost
• High defect density
• Limited wafer size
• Shortage
Device
• Low manufacturing yield
• High cost
• Multi-sourcing (no longer an issue for diode, but still for transistors as of 2017)
• Long-term reliability
• What is the right packaging?
System
• How to integrate the active component (driving, EMI, topology choices, etc.)?
• What are the available choices for passive components and dielectric materials?
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
16
SIC POWER INDUSTRY - MAIN REMAINING CHALLENGES
From materials to system integration
Material
• High cost
• High defect density
• Limited wafer size
• Shortage
Device
• Low manufacturing yield
• High cost
• Multi-sourcing
• Long-term reliability
• Packaging
System
• How to integrate the active component (driving, EMI, topology choices, etc.)?
• What are the available choices for passive components and dielectric materials?
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
17
SIC POWER INDUSTRY - MAIN REMAINING CHALLENGES
From materials to system integration
Material
• High cost
• High defect density
• Limited wafer size
• Shortage
Device
• Low manufacturing yield
• High cost
• Multi-sourcing
• Long-term reliability
• Packaging
System
• How to integrate the active component (driving, EMI, topology choices, etc.)?
• What are the available choices for passive components and dielectric materials?
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
19
GaN INDUSTRY - DEVELOPMENT TIMELINE
20162015
Infineon acquires IR Agree on partnership
Announce collaboration
Volume production
Company’s
first GaN
product
GaN IC
GaN IC
Joint development
600V power stage80V power stage
Announce collaboration
2017
Investment
Announce collaboration
Mass production of
650 V GaN
First devices
in 8” wafersHalf bridge
power IC
4x fab increase for
Lidar Sensors
Fast charging
GaN IC
Foundry investment on
MOCVD for Power GaN
DC/DC+POL solution
for data centers
Automotive
qualification
GaN on their
power
conversion
module
2018
Volume production
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
20
GAN POWER DEVICE TARGET APPLICATIONS OVERVIEW
GaN
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
21
GaN FOR POWER ELECTRONICS APPLICATION
Market (M$)
Time
Bull case scenario
2018
Fast
charger
2023
Wireless
charging
EV/HEV
Data centres
400
100
++
+++
LiDAR
+++
Base scenario 1
2
300
200
500
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
22
GaN POWER INDUSTRY - MAIN REMAINING CHALLENGES
From materials to system integration
Epi
• High cost
• High defect density
• Relatively low yield
Device
• High cost
• Multi-sourcing
• E-mode vs D-mode
• Long-term reliability
System
• How to integrate the active component (driving, EMI, topology choices, etc.)?
• What are the available choices for passive components and dielectric materials?
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
23
GaN POWER INDUSTRY - MAIN REMAINING CHALLENGES
From materials to system integration
Epi
• High cost
• High defect density
• Relatively low yield
Device
• High cost
• Multi-sourcing
• E-mode vs D-mode
• Long-term reliability
System
• How to integrate the active component (driving, EMI, topology choices, etc.)?
• What are the available choices for passive components and dielectric materials?
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
24
GaN POWER INDUSTRY - MAIN REMAINING CHALLENGES
From materials to system integration
Epi
• High cost
• High defect density
• Relatively low yield
Device
• High cost
• Multi-sourcing
• E-mode vs D-mode
• Long-term reliability
System
• How to integrate the active component (driving, EMI, topology choices, etc.)?
• What are the available choices for passive components and dielectric materials?
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
26
CONCLUSION: HOW TO ACCELERATE WBG ADOPTION
Accelerator LimiterScientistDream
Optimistic
Performances are better
Obviously the next
generation
Designer Challenge
Realistic
How do use the device
How to design?
How long to develop
Whychanging?
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
27
CONCLUSION
SiC and GaN future…
• In general, the power electronics market will be driven by module and IGBT growth over the next 5 years. Many standard power applications are being upgraded to enable higher efficiencies or reduced size systems, leaving an open door to SiC and GaN penetration.
• New applications are also coming up. WBG could penetrate to those markets.
• The SiC power device market outlook is without doubt promising as market adoption is ongoing. One of the main driving application is EV/HEV. Shortage, cost and multi-sourcing need also to be taken into account for forecasts.
• GaN is still a path away from SiC, less mature so at the moment being less adopted. Need high value addition to the end system to include it in the end product. Reliability seems to be still a barrier for high power systems.
• SiC and GaN will grow in shares in the power electronics devices in the future. Each one in a different speed and entering in different applications. However, they will always a co-exist with Silicon devices.
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
28
Biography & contact
CONTACT
Dr Milan ROSINA
Dr. Milan Rosina is a Principal Analyst for Energy Conversion & Emerging Materials at Yole Développement. Before joining Yole, he worked as a Research Scientist and a Project Manager in the fields of photovoltaics, microelectronics, and LED. Dr. Rosina has more than 15 years of scientific and industrial experience with prominent research institutions, an equipment maker, and a utility company. His expertise includes new equipment and process development, due diligence, technology, and market surveys in the fields of renewable energies, energy storage, batteries, power electronics, thermal management, and innovative materials and devices.
E-mail: rosina@yole.fr
We can send you the presentation
by e-mail.
Just drop your business card or
come to our booth A4667
29
FOR MORE INFORMATION SEE YOLE’S REPORTS…
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
Stay tuned on
www.i-micronews.com
New report: December 2018
31
YOLE DEVELOPPEMENT– 4 DIVISIONS
Life Sciences
& Healthcare o Microfluidic
o BioMEMS
o Inkjet Printing
o Solid-State Medical Imaging & BioPhotonics
o Bio Technologies
Power
& Wireless
o RF Devices & Technology
o Compound Semiconductors & Emerging Materials
o Power Electronics
o Batteries & Energy Management
Semiconductor
& Software o Package & Assembly & Substrates
o Semiconductor Manufacturing
o Memory
o Software & Computing
Photonics,
Sensing & Display
o Solid-State Lighting & Display
o MEMS, Sensors & Actuators
o Imaging
o Photonics & Optoelectronics
Semiconductor
& Software
Power & Wireless
Photonics,
Sensing
& Display
Life
Sciences &
Healthcare
SEMICON Europa, November 15th, 2018 | www.yole.fr | ©2018
32
6 COMPANIES TO SERVE YOUR BUSINESS
Due diligence
www.yole.fr
Manufacturing costs analysis
Teardown and reverse engineering
Cost simulation tools
www.systemplus.fr
Market, technology and strategy
consulting
www.yole.fr
IP analysis
Patent assessment
www.knowmade.fr
Innovation and business maker
www.bmorpho.com
Design and characterization of
innovative optical systems
www.piseo.fr
Yole Group of Companies
top related