Digital Integrated Circuits - SJTUumji.sjtu.edu.cn/.../2013/07/40_VE312_Digital-Integrated-Circuits.pdf© Digital Integrated Circuits ... Digital circuits © Digital Integrated Circuits
Post on 20-Apr-2018
316 Views
Preview:
Transcript
EE141 © Digital Integrated Circuits2nd Introduction
Digital Integrated Circuits
Yaping Dan (但亚平), PhD
Office: Law School North 301
Tel: 34206045-3011
Email: yapingd@gmail.com
EE141 © Digital Integrated Circuits2nd Introduction
Digital Integrated Circuits
Introduction
p-n junctions and MOSFETs
The CMOS inverter
Combinational logic structures
Memories and array structures
EE141 © Digital Integrated Circuits2nd Introduction
Digital Integrated Circuits
Grading Policy:
Homework: 20%
Quiz: 10%
Discussion and Participation: 5%
Projects 15%
Midterms: 25%
Final 25%
EE141 © Digital Integrated Circuits2nd Introduction
Ms. Rongrong Tao
2:00-5:00pm, Thursday
Rm xx Building
email: nankaitaorongrong@hotmail.com
Mr. Lie (Deon) Chen
8:00-8:55, Friday
Rm xx Building
email: Mihael_keehl@sjtu.edu.cn
Teaching Assistants and Office Hours
EE141 © Digital Integrated Circuits2nd Introduction
The First Computer
The BabbageDifference Engine(1832)
25,000 parts
cost: £17,470
EE141 © Digital Integrated Circuits2nd Introduction
ENIAC - The first electronic computer (1946)
17,468 vacuum tubes
70,000 resistors
10,000 capacitors
1,500 relays
6,000 manual switches
5 million soldered joints
167 square meters of floor space
weighed 30 tons
160 kilowatts of electrical power
Sponsored by US military
Accuracy for artillery-firing
Grid control
(栅极)
EE141 © Digital Integrated Circuits2nd Introduction
The Transistor Revolution
First transistor Bell Labs, 1948
Based on Ge (锗)
John Bardeen, William
Shockley, and Walter Brattain at
Bell Labs, 1948
EE141 © Digital Integrated Circuits2nd Introduction
Shockley Semiconductor Company
Original site at California
Bell Lab, New Jewsey
EE141 © Digital Integrated Circuits2nd Introduction
Shockley Semiconductor Company
Gordon Moore Robert Noyce
EE141 © Digital Integrated Circuits2nd Introduction
The First Integrated Circuits
Bipolar logic 1960’s
Fairchild Semiconductor, Inc
Silicon
Bipolar (PNP, NPN)
CMOS
EE141 © Digital Integrated Circuits2nd Introduction
Intel 4004 Micro-Processor
1971
1000 transistors
1 MHz operation
EE141 © Digital Integrated Circuits2nd Introduction
Moore’s Law
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1959
1960
1961
1962
1963
1964
1965
1966
1967
1968
1969
1970
1971
1972
1973
1974
1975
LO
G2 O
F T
HE
NU
MB
ER
OF
CO
MP
ON
EN
TS
PE
R IN
TE
GR
AT
ED
FU
NC
TIO
N
Electronics, April 19, 1965.
EE141 © Digital Integrated Circuits2nd Introduction
Moore’s Law
In 1965, Gordon Moore noted that the
number of transistors on a chip doubled
every 18 to 24 months.
He made a prediction that
semiconductor technology will double its
effectiveness every 18 months
EE141 © Digital Integrated Circuits2nd Introduction
Bipolar and CMOS
Linear, low noise, high gain
Analog circuits
Low cost, low power, high speed
Digital circuits
EE141 © Digital Integrated Circuits2nd Introduction
Bipolar and CMOS
Linear, low noise, high gain
Analog circuits
Low power, high speed, low cost
Digital circuits
EE141 © Digital Integrated Circuits2nd Introduction
Bipolar and CMOS
Linear, low noise, high gain
Analog circuits
Low power, high speed, low cost
Digital circuits
EE141 © Digital Integrated Circuits2nd Introduction
Bipolar and CMOS
Linear, low noise, high gain
Analog circuits
Low power, high speed, low cost
Digital circuits
EE141 © Digital Integrated Circuits2nd Introduction
Bipolar and CMOS
Linear, low noise, high gain
Analog circuits
Low power, high speed, low cost
Digital circuits
EE141 © Digital Integrated Circuits2nd Introduction
Bipolar and CMOS
Linear, low noise, high gain
Analog circuits
Low power, high speed, low cost
Digital circuits
EE141 © Digital Integrated Circuits2nd Introduction
Benefits of scaling-down
1. Low cost
2. High speed
Area/2
Lch
2
chL
EE141 © Digital Integrated Circuits2nd Introduction
Benefits of scaling-down
1. Low cost
2. High speed
3. Low power
Area/2
L
2
L
V
I
2/V
2/I
EE141 © Digital Integrated Circuits2nd Introduction
The development of CMOS technology
Higher operation speed
Greater integration density
Lower power consumption
EE141 © Digital Integrated Circuits2nd Introduction
Challenges of scaling-down
Ileakage ~
qkT
Vt
/exp
1. High power density
EE141 © Digital Integrated Circuits2nd Introduction
Power density
4004 8008
8080
8085
8086
286 386
486 Pentium® proc
P6
1
10
100
1000
10000
1970 1980 1990 2000 2010
Year
Po
we
r D
en
sit
y (
W/c
m2)
Hot Plate
Nuclear
Reactor
Rocket
Nozzle
Power density too high to keep junctions at low temp
Courtesy, Intel
EE141 © Digital Integrated Circuits2nd Introduction
Challenges of scaling-down 1. High power density
2. Leakage current
Gordon Moore, Intel, IEEE
Gate oxide tunneling
SD leakage
High k dielectric
Adaptive
circuit design
Low temp
packaging tech
Novel devices: tunneling transistors,
single electronc transistors, ..
EE141 © Digital Integrated Circuits2nd Introduction
Challenges of scaling-down 1. High power density
2. Leakage current
3. Lithography
EE141 © Digital Integrated Circuits2nd Introduction
Challenges of scaling-down 1. High power density
2. Leakage current
3. Lithography
4. Short channel effect
EE141 © Digital Integrated Circuits2nd Introduction
Challenges of scaling-down 1. High power density
2. Leakage current
3. Lithography
4. Short channel effect
5. Dopant number fluctuation
EE141 © Digital Integrated Circuits2nd Introduction
Summary
Digital integrated circuits have come a long way and still have quite some potential left for the coming decades
Some interesting challenges ahead Getting a clear perspective on the challenges and
potential solutions is the purpose of this book
top related