1 Block HV1 LDMOS Device Number of fingers: 56, Periphery ... · ci en cy (%) Available Input Power (dBm) 1 Block HV1 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency:
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-20
-10
0
10
20
30
40
-30 -20 -10 0 10 20 30 40
Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at F
unda
men
tal
(dB
m)
Available Input Power(dBm)
4
5
6
7
8
9
-30 -20 -10 0 10 20 30 40
Transducer Gain vs. Available Input PowerSingle Tone Excitation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
10
11
12
13
14
15
16
17
-30 -20 -10 0 10 20 30 40
Power Gain vs. Available Input PowerSingle Tone Excitation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
10
20
30
40
50
60
-30 -20 -10 0 10 20 30 40
Drain Efficiency vs. Available Input PowerSingle Tone Excitation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
50 ohm TerminationSolid:Simulated & Points:Measured
Simulated:hv150d18swp1.txt & Measured:hv150d18.swpRev/Date: Rev0/0298
0
50
100
150
200
250
300
350
400
-30 -20 -10 0 10 20 30 40
Drain Current vs. Available Input PowerSingle Tone Excitation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20 30 40
Output Power at 2fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 2
fo(d
Bm
)
Available Input Power(dBm)
-100
-80
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20 30 40
Output Power at 3fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 3
fo(d
Bm
)
Available Input Power(dBm)
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-30 -20 -10 0 10 20 30 40
Input Return Loss vs. Available Input PowerSingle Tone Excitation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
50 ohm TerminationSolid:Simulated & Points:Measured
Simulated:hv150d18swp1.txt & Measured:hv150d18.swpRev/Date: Rev0/0298
-10
0
10
20
30
40
-30 -20 -10 0 10 20 30 40
Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at F
unda
men
tal
(dB
m)
Available Input Power(dBm)
6
8
10
12
14
16
18
-30 -20 -10 0 10 20 30 40
Transducer Gain vs. Available Input PowerSingle Tone Excitation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
8
10
12
14
16
18
20
-30 -20 -10 0 10 20 30 40
Power Gain vs. Available Input PowerSingle Tone Excitation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
80
-30 -20 -10 0 10 20 30 40
Drain Efficiency vs. Available Input PowerSingle Tone Excitation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
Simulated:hv1pmd18swp1.txt & Measured:hv1pmd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for PowerSolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
0
100
200
300
400
500
-30 -20 -10 0 10 20 30 40
Drain Current vs. Available Input PowerSingle Tone Excitation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
-50
-40
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30 40
Output Power at 2fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 2
fo(d
Bm
)
Available Input Power(dBm)
-100
-80
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20 30 40
Output Power at 3fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 3
fo(d
Bm
)
Available Input Power(dBm)
-9
-8
-7
-6
-5
-4
-3
-2
-1
-30 -20 -10 0 10 20 30 40
Input Return Loss vs. Available Input PowerSingle Tone Excitation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
Simulated:hv1pmd18swp1.txt & Measured:hv1pmd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for PowerSolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
-10
0
10
20
30
40
-30 -20 -10 0 10 20 30 40
Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at F
unda
men
tal
(dB
m)
Available Input Power(dBm)
6
8
10
12
14
16
18
-30 -20 -10 0 10 20 30 40
Transducer Gain vs. Available Input PowerSingle Tone Excitation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
8
10
12
14
16
18
20
-30 -20 -10 0 10 20 30 40
Power Gain vs. Available Input PowerSingle Tone Excitation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
20
40
60
80
100
-30 -20 -10 0 10 20 30 40
Drain Efficiency vs. Available Input PowerSingle Tone Excitation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
Simulated:hv1emd18swp1.txt & Measured:hv1emd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for EfficiencySolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
0
50
100
150
200
250
300
350
-30 -20 -10 0 10 20 30 40
Drain Current vs. Available Input PowerSingle Tone Excitation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
-50
-40
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30 40
Output Power at 2fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 2
fo(d
Bm
)
Available Input Power(dBm)
-80
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20 30 40
Output Power at 3fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 3
fo(d
Bm
)
Available Input Power(dBm)
-9
-8
-7
-6
-5
-4
-3
-30 -20 -10 0 10 20 30 40
Input Return Loss vs. Available Input PowerSingle Tone Excitation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
Simulated:hv1emd18swp1.txt & Measured:hv1emd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for EfficiencySolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
-10
0
10
20
30
40
-30 -20 -10 0 10 20 30 40
Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at F
unda
men
tal
(dB
m)
Available Input Power(dBm)
6
8
10
12
14
16
18
-30 -20 -10 0 10 20 30 40
Transducer Gain vs. Available Input PowerSingle Tone Excitation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
8
10
12
14
16
18
20
-30 -20 -10 0 10 20 30 40
Power Gain vs. Available Input PowerSingle Tone Excitation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
80
-30 -20 -10 0 10 20 30 40
Drain Efficiency vs. Available Input PowerSingle Tone Excitation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
Simulated:hv1ped18swp1.txt & Measured:hv1ped18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for Power & EfficiencySolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
0
50
100
150
200
250
300
350
400
-30 -20 -10 0 10 20 30 40
Drain Current vs. Available Input PowerSingle Tone Excitation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
-50
-40
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30 40
Output Power at 2fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 2
fo(d
Bm
)
Available Input Power(dBm)
-100
-80
-60
-40
-20
0
20
40
-30 -20 -10 0 10 20 30 40
Output Power at 3fo vs. Available Input PowerSingle Tone Excitation
Out
put P
ower
at 3
fo(d
Bm
)
Available Input Power(dBm)
-9
-8
-7
-6
-5
-4
-3
-2
-30 -20 -10 0 10 20 30 40
Input Return Loss vs. Available Input PowerSingle Tone Excitation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
Simulated:hv1ped18swp1.txt & Measured:hv1ped18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for Power & EfficiencySolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
-20
-10
0
10
20
30
40
-20 -10 0 10 20 30
Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tot
al O
utpu
t Pow
er(d
Bm
)
Available Input Power(dBm)
4
5
6
7
8
9
10
-20 -10 0 10 20 30
Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
10
11
12
13
14
15
16
17
-20 -10 0 10 20 30
Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
10
20
30
40
50
-20 -10 0 10 20 30
PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
PAE
(%)
Available Input Power(dBm)
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
50 ohm TerminationSolid:Simulated & Points:Measured
Simulated:h1i50d18swp1.txt & Measured:h1i50d18.swpRev/Date: Rev0/0298
0
50
100
150
200
250
-20 -10 0 10 20 30
Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
0
10
20
30
40
50
60
-20 -10 0 10 20 30
Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
-100
-80
-60
-40
-20
0
20
-20 -10 0 10 20 30
Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Out
put P
ower
at H
ighe
st 3
IMD
(dB
m)
Available Input Power(dBm)
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-20 -10 0 10 20 30
Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
50 ohm TerminationSolid:Simulated & Points:Measured
Simulated:h1i50d18swp1.txt & Measured:h1i50d18.swpRev/Date: Rev0/0298
-10
0
10
20
30
40
-20 -10 0 10 20 30
Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tot
al O
utpu
t Pow
er(d
Bm
)
Available Input Power(dBm)
9
10
11
12
13
14
15
16
17
-20 -10 0 10 20 30
Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
10
12
14
16
18
20
-20 -10 0 10 20 30
Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
-20 -10 0 10 20 30
PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
PAE
(%)
Available Input Power(dBm)
Simulated:h1ipmd18swp1.txt & Measured:h1ipmd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for PowerSolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
0
50
100
150
200
250
300
350
-20 -10 0 10 20 30
Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
-20 -10 0 10 20 30
Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
-80
-60
-40
-20
0
20
40
-20 -10 0 10 20 30
Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Out
put P
ower
at H
ighe
st 3
IMD
(dB
m)
Available Input Power(dBm)
-8
-7
-6
-5
-4
-3
-2
-1
-20 -10 0 10 20 30
Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
Simulated:h1ipmd18swp1.txt & Measured:h1ipmd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for PowerSolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
-10
0
10
20
30
40
-20 -10 0 10 20 30
Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tot
al O
utpu
t Pow
er(d
Bm
)
Available Input Power(dBm)
8
10
12
14
16
18
-20 -10 0 10 20 30
Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
10
12
14
16
18
20
-20 -10 0 10 20 30
Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
-20 -10 0 10 20 30
PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
PAE
(%)
Available Input Power(dBm)
Simulated:h1iemd18swp1.txt & Measured:h1iemd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for EfficiencySolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
0
50
100
150
200
250
300
-20 -10 0 10 20 30
Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
80
-20 -10 0 10 20 30
Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
-80
-60
-40
-20
0
20
40
-20 -10 0 10 20 30
Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Out
put P
ower
at H
ighe
st 3
IMD
(dB
m)
Available Input Power(dBm)
-9
-8
-7
-6
-5
-4
-3
-20 -10 0 10 20 30
Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
Simulated:h1iemd18swp1.txt & Measured:h1iemd18.swp
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for EfficiencySolid:Simulated & Points:Measured
Rev/Date: Rev0/0298
-10
0
10
20
30
40
-20 -10 0 10 20 30
Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tot
al O
utpu
t Pow
er(d
Bm
)
Available Input Power(dBm)
9
10
11
12
13
14
15
16
17
-20 -10 0 10 20 30
Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Tra
nsdu
cer
Gai
n(d
B)
Available Input Power(dBm)
10
12
14
16
18
20
-20 -10 0 10 20 30
Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Pow
er G
ain
(dB
)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
-20 -10 0 10 20 30
PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
PAE
(%)
Available Input Power(dBm)
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for Power & EfficiencySolid:Simulated & Points:Measured
Simulated:h1iped18swp1.txt & Measured:h1iped18.swpRev/Date: Rev0/0298
0
50
100
150
200
250
300
-20 -10 0 10 20 30
Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in C
urre
nt(m
A)
Available Input Power(dBm)
0
10
20
30
40
50
60
70
-20 -10 0 10 20 30
Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Dra
in E
ffic
ienc
y(%
)
Available Input Power(dBm)
-80
-60
-40
-20
0
20
40
-20 -10 0 10 20 30
Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Out
put P
ower
at H
ighe
st 3
IMD
(dB
m)
Available Input Power(dBm)
-9
-8
-7
-6
-5
-4
-3
-2
-20 -10 0 10 20 30
Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation
Inpu
t Ret
urn
Los
s(d
B)
Available Input Power(dBm)
1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm
Frequency: 1 GHz, VDS
=26 v & IDS
=2.0 mA/mm
Tuned for Power & EfficiencySolid:Simulated & Points:Measured
Simulated:h1iped18swp1.txt & Measured:h1iped18.swpRev/Date: Rev0/0298
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