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Hu_ch07v3.fm Page 259 Friday, February 13, 2009 4:55 PM 7 MOSFETs in ICs—Scaling, Leakage, and Other Topics CHAPTER OBJECTIVES How the MOSFET gate length might continue…

Engineering 7. dopant diffusion 1,2 2013 microtech

Microelectronics Technology Dopant Diffusion DOPANT DIFFUSION To form source and drain regions in MOS devices and also to dope poly-Si gate material. Used to form base regions,…

Documents SiPM technology at FBK C. Piemonte [email protected] Fondazione Bruno Kessler, Trento, Italy.

SiPM technology at FBK C. Piemonte [email protected] Fondazione Bruno Kessler, Trento, Italy IPRD10, Siena, 8 June 2010 C. Piemonte * Outline FBK SiPM technology overview FBK…

Documents Copy of Ionimplantation

Ion Implantation www2.austin.cc.tx.us/HongXiao/Book.htm www2.austin.cc.tx.us/HongXiao/Book.htm Ion Implantation Introduction Safety Hardware Processes Summary www2.austin.cc.tx.us/HongXiao/Book.htm…

Documents 28 June 2007G. Pauletta: ALCPG 20071 Tests of IRST SiPMs G. Pauletta Univ. & I.N.F.N. Udine Outline....

Tests of IRST SiPMs G. Pauletta Univ. & I.N.F.N. Udine Outline IRST SiPMs : baseline characteristics first application at FNAL test beam subsequent evolution 4.New devices…