SET (3)- SET (3)- OBJECTIVE TYPE QUESTIONS 1. The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B)…

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Chapter I Devices Electronic Materials and Devices 1. The forbidden charge in germanium at 0°K is (a) 0.785 eV (b) 1.21 eV (c) 1.00 eV (d) 0.01 eV 2. One electron volt equals…

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POWER ELECTRONICS LAB MANUAL    LIST OF EXPERIMENTS  EXP#   01  02    03    04  05    06    07    08      09  10    11  12  13  14  TITLE Determination of the Form Factor of Diode …

1.A K 2. Ansari Mohammed Maviya 01 Saqib Ghatte 06 Burhanuddin Kachwala 32 Shubham Mayekar 18 3. 1. Introduction to Diode - Ansari Mohd. Maviya P-N Junction…

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Slide 1 Slide 2 Slide 3 Contents : CONSTRUCTION PRINCIPLE OF OPERATION CHARACTERISTICS ADVANTAGES DISADVANTAGES APPLICATION Slide 4 CONSTRUCTION  The photodiode is a p-n…