PN Junction Section 2.2-2.3 References Section 2.2-2.3. (PN junction without energy band-diagram.) Supplemental Reference: âModern Semiconductor Devices for Integrated Circuitsâ,…

Lecture 11 OUTLINE pn Junction Diodes (cont’d) Narrow-base diode Junction breakdown Reading: Pierret 6.3.2, 6.2.2; Hu 4.5 Introduction Lecture 11, Slide * The ideal diode…

Welcome to EE 130/230A Integrated Circuit Devices Instructors: Prof. Tsu-Jae King Liu ([email protected]) TA: Peng Zheng ([email protected]) Web page: http://www-inst.eecs.berkeley.edu/~ee130/…

Lecture 9 OUTLINE pn Junction Diodes Electrostatics (step junction) Reading: Pierret 5; Hu 4.1-4.2 pn Junctions A pn junction is typically fabricated by implanting or diffusing…

Lecture 4 OUTLINE Semiconductor Fundamentals (cont’d) Properties of carriers in semiconductors Carrier drift Scattering mechanisms Drift current Conductivity and resistivity…

Lecture 28 OUTLINE The BJT (cont’d) Small-signal model Cutoff frequency Transient (switching) response Reading: Pierret 12; Hu 8.8-8.9 Small-Signal Model Transconductance:…

Lecture 7 OUTLINE Work Function Metal-Semiconductor Contacts Energy band diagrams Depletion-layer width Small-signal capacitance Reading: Pierret 14.1-14.2; Hu 4.16 Metal-Semiconductor…

Lecture 21 OUTLINE The MOSFET (cont’d) P-channel MOSFET CMOS inverter analysis Sub-threshold current Small signal model Reading: Pierret 17.3; Hu 6.7, 7.2 P-Channel MOSFET…

Slide 1 EE130/230A Discussion 15 Peng Zheng 1 Early Voltage, VA Output resistance: A large VA (i.e. a large ro ) is desirable IB3 IC VEC 0 IB2 IB1 VA Punch-Through E-B and…

Slide 1 EE130/230A Discussion 12 Peng Zheng 1 Velocity Saturation Velocity saturation limits IDsat in sub-micron MOSFETS Simple model: Esat is the electric field at velocity…