PRAMOD KUMAR AGARWAL Roll Number-211EE1323 Under The Guidance of Prof. P. K. Sahu Department of Electrical Engineering National Institute of Technology Rourkela, Pin-769008.…
Slide 1CNT devices Since their first discovery and fabrication in 1991, CNTs have received considerable attention because of the prospect of new fundamental science and many…
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1. Breakdown Characteristics of Interconnect Dielectrics Gaddi S. Haase , Ennis T. Ogawa And Joe W. McPherson SiTD, Texas Instruments, Inc. Dallas, TX,USA 5A.1 2. Characterize…
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ON THE MODELING OF DUAL-MATERIAL DOUBLE-GATE FULLY-DEPLETED SILICON-ON-INSULATOR MOSFET Ph.D. THESIS by ALOK KUMAR KUSHWAHA DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING…
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