X-ray Optics J. B. Hastings

J. B. [email protected]

LUSI DOE Review July 23, 2007X-ray Optics 1

X-ray Optics J. B. Hastings

X-ray Optics J. B. Hastings

Beam definitionAttenuatorsSlitsPulse picker

FocusingBe lensKirkpatrick-Baez Mirror systems

Diffractive opticsMonochromatorPulse compressorSplit and delay

Summary

Beam definitionAttenuatorsSlitsPulse picker

FocusingBe lensKirkpatrick-Baez Mirror systems

Diffractive opticsMonochromatorPulse compressorSplit and delay

Summary



6

1 24 5

1 SXR Imag

2 AMOS (LCLS)

3 XR pump-probe Full instrument

4 XPCS Full instrument

5 CXI Full instrument

6 HEDS

1 SXR Imag

2 AMOS (LCLS)

3 XR pump-probe Full instrument

4 XPCS Full instrument

5 CXI Full instrument

6 HEDS

LCLSLUSI

HEDS (NNSA)

Offset MonochromatorExp. ChamberDetector

Beam Transport

LUSI schematicLUSI schematic

XPP

3

XCS CXI



InstrumentsInstrumentsXCSXPPCXI



AttenuatorsAttenuatorsXCSXPPCXI

AttenuatorsVariable, up to 10 6 reductionHigh damage threshold (Be or B4C)

AttenuatorsVariable, up to 10 6 reductionHigh damage threshold (Be or B4C)



Slits SystemSlits SystemXCSXPPCXI

Slit systemsVariable horizontal and vertical gap from 5 μm – 5 mmCan withstand full LCLS flux – unfocusedMinimize background scatter from blades

Slit systemsVariable horizontal and vertical gap from 5 μm – 5 mmCan withstand full LCLS flux – unfocusedMinimize background scatter from blades

B. Lengeler et al., J. Synchrotron Rad., 6, 1153-1167 (1999).



Pulse PickerPulse PickerXCSXPPCXI

Pulse pickerPermit LCLS operation at 120 hzSingle pulses. Useful for samples supported on substratesReduced rate ex. 10 hz operationHigh damage thresholdUse rotating discs, concept already in use at ESRF

Pulse pickerPermit LCLS operation at 120 hzSingle pulses. Useful for samples supported on substratesReduced rate ex. 10 hz operationHigh damage thresholdUse rotating discs, concept already in use at ESRF



Be Focusing LensesBe Focusing LensesXCSXPPCXI

Beryllium CRL> 40% throughput

Positioning resolution and repeatability to 1 µmZ translation to vary spot size

Beryllium CRL> 40% throughput

Positioning resolution and repeatability to 1 µmZ translation to vary spot size



KB MirrorKB MirrorXCSXPPCXI



KB focusing mirrorsKB focusing mirrors

Mirror system (1 µm and 0.1 µm KB)

KB mirrors have produced 50 nm focuses of SR (Yamauchi et al., SRI 2006).Bent plane mirrors – or pre-figured Achromatic focusing.Use B4C as coating

Damage resistantGood reflectivity



KB Pair for 0.1 μm focusGrazing angle 0.2 DegB4C coatingHorz. Mirror 20 cmVert. Mirror 10 cmFocal spot size (FWHM in microns)

Horz: 0.097Vert: 0.083



LLNL has state-of-the-art surface metrology for the figure, mid- and high spatial frequency ranges

LLNL has state-of-the-art surface metrology for the figure, mid- and high spatial frequency ranges

10-2

103

108

1013

1018

10-8 10-6 10-4 10-2 100

diamond-turned Alpolyimide on Al, ML-coated

Frequency (nm-1)

PSD

(nm

4 )Slope error = 100 rad rms

= 2.7 Ǻ rms

= 17.6 Ǻ rms

AFM

Diamond-turned Aluminum surface, after polyimide and Mo/Si multilayer coating

Polyimide smoothes high spatial frequency roughness, including 10 m-range diamond turning marks

180 m

14

0

m

Measurements obtained with a Zygo New ViewTM optical profiling microscope operated at 40objective lens magnification

Diamond-turned Aluminum surface, as-received from manufacturer

100 nm

-200 nm

0 nm

Visible light interferometry results from multilayer-coated, diamond-turned condenser mirror

Height map Slope map

R. Soufli, E. Spiller, M. A. Schmidt, J. C. Robinson, S. L. Baker, S. Ratti, M. A. Johnson, E. M. Gullikson, Opt. Eng. 43(12), 3089-3095 (2004).



The LLNL DC-magnetron sputtering system can fit multiple large-area substrates in a single deposition

The LLNL DC-magnetron sputtering system can fit multiple large-area substrates in a single deposition

4-mirror and 2-mirror EUV cameras have been multilayer-coated in a single deposition run, achieving optic-to-optic wavelength matching within 1 = 0.010 nm

Underneath view of LLNL chamber lid with 5 sputtering targets

R. Soufli, E. Spiller, M. A. Schmidt, J. C. Davidson, R. F. Grabner, E. M. Gullikson, B. B. Kaufmann, S. L. Baker, H. N. Chapman, R. M. Hudyma, J. S. Taylor, C. C. Walton, C. Montcalm, and J. A. Folta, Proc. SPIE 4343, 51-59 (2001).



Stress and roughness vs. pressureStress and roughness vs. pressure

Lower pressure films reduce roughnessAlso increase stressCurves shift upwards as thickness grows

Favor thinner films grown at higher pressures

Higher micro-roughness, minimize risk of delamination

-2000

-1500

-1000

-500

0

500

1000

0 2 4 6 8 10 12 14 16 18 20

1

10

roughness

stress

dB

4C= 542- 565 Å

Ar sputtering pressure (mTorr)

Str

ess

(MP

a)

Rou

ghn

ess

(Å r

ms)



Offset MonochromatorOffset MonochromatorXCSXPPCXI

Parameter Value

Energy Range 6 – 24 keV

Horizontal Offset 600 mm

Scattering Angle 90 - 500

Accuracy 0.02 arcsec

χ Accuracy 4 arcsec

Double Crystal Offset monochromator Increase longitudinal coherence length (narrow X-ray spectrum)Multiplexes LCLS beam

Double Crystal Offset monochromator Increase longitudinal coherence length (narrow X-ray spectrum)Multiplexes LCLS beam



Offset MonochromatorOffset Monochromator

Double Crystal Offset monochromator for 2 µm Si (111) @ 1.5 Å

85% transmission ,2.5% - Mono beam, 1.3% - Diagnostics beam

Double Crystal Offset monochromator for 2 µm Si (111) @ 1.5 Å

85% transmission ,2.5% - Mono beam, 1.3% - Diagnostics beam

Scattering Angles (2 theta)

1.5 Å 0.5 Å

Silicon

11127.6° 9.1°

Silicon

22045.8° 14.9°

Diamond 111

42.5° 13.9°

Diamond 220

- 22.8°



Pulse CompressorPulse CompressorXCSXPPCXI

λ(nm)

d(nm)

θB b Sin βH

(mm)Δλ/λ(%)

0.15 2.0 2.1º +1 0.03 2600 0.5%

Parameters for a Laue case pulse compressor for the LCLS.



Split and DelaySplit and DelayXCSXPPCXI

Provided by DESY/SLAC MoU Prototype existing 1st Commissioning May 2007 pulse duration < delay < 3 ns

based on Si (511) with 2θ = 90º

E=8.389 keV

Provided by DESY/SLAC MoU Prototype existing 1st Commissioning May 2007 pulse duration < delay < 3 ns

based on Si (511) with 2θ = 90º

E=8.389 keV



SummarySummary

Optical components are conceptually the same as those for SR experiments: slits, attenuators, double crystal monochromators, refractive lens, KB focusingOptical components are in general not beyond state of the artCharacteristics of the LCLS beam demand extreme precision and damage tolerance: sub-micro radian rotations, B4C coatingsMultiplexing capability relies on thin Si or perfect diamond crystals





0.990

1.000

1.010

20 30 40 50 60 70 80 90

-0.2

0

0.2

Radius (mm)

N

orm

aliz

ed f

ilm

th

ick

nes

s

Th

ick

nes

s er

ror

(nm

)

39-nm, 3:1 elbows (Patrick Naulleau, LBNL)

39-nm, 3:1 elbows (Patrick Naulleau, LBNL)

Added figure error = 0.032 nm rms

M1 mirror, PO Box 2M1 mirror, PO Box 2SES at ALSSES at ALS

M2 mirror, MET Set 1M2 mirror, MET Set 1 MET camera MET camera

Added figure error = 0.044 nm rms

Thi

ckn e

s s e

r ro r

(n m

)

No r

ma l

ized

fil m

th i

c kne

ss

Measured wavefront = 0.55 nm rmsK. A. Goldberg et al, J. Vac. Sci. Technol. B

22(6), 2956-2961 (2005)

Printed 25 nm equal-line, and 29 nm isolated-line features P. P. Naulleau et al, Proc. SPIE 5751, 56-63 (2005)

R. Soufli et al, Appl. Opt. 46 (June 20, 2007)

Measured wavefront = 0.55 nm rmsK. A. Goldberg et al, J. Vac. Sci. Technol. B

22(6), 2956-2961 (2005)

Printed 25 nm equal-line, and 29 nm isolated-line features P. P. Naulleau et al, Proc. SPIE 5751, 56-63 (2005)

R. Soufli et al, Appl. Opt. 46 (June 20, 2007)

Projection optics with diffraction-limited performance have been coated at LLNL during the EUVL program



Reflectometry and scattering beamline 6.3.2 at the ALS synchrotron (LBNL) is operated by CXRO

Reflectometry and scattering beamline 6.3.2 at the ALS synchrotron (LBNL) is operated by CXRO

Beamline Specifications• Wavelength precision: 0.007%• Wavelength uncertainty: 0.013%• Reflectance precision: 0.08%• Reflectance uncertainty: 0.08%• Spectral purity: 99.98%• Dynamic range: 1010

Precision Reflectometer

• 10 m 300 m beam size

• 10 m positioning precision

• Angular precision 0.01 deg

• 6 degrees of freedom

• Sample size up to 200 mm

PI = Eric M. GulliksonPI = Eric M. Gullikson

Cross-calibration results are shown between ALS beamline 6.3.2 and the PTB facility at the BESSY synchrotron (Berlin, Germany)

12.5 13.0 13.5 14.00

10

20

30

40

50

60

70

12.90 12.95 13.0067.5

68.0

68.5

69.0

Ref

lect

ance

(%

)

Wavelength (nm)

PTB CXRO

1-50 nm wavelength range



0.00001

0.0001

0.001

0.01

0.1

1

0 20 40 60 80 100

ALS reflectance datamodel

h = 91.8 eV ( = 13.5 nm)

dB

4C= 542 Å

(deg)

Ref

lect

ance

B4C film thickness, roughness and density are verified by fitting of EUV reflectance data

B4C film thickness, roughness and density are verified by fitting of EUV reflectance data

B4C film density and composition have been determined through X-ray Photoelectron Spectroscopy and Rutherford Backscattering



1.2.2 X-ray Optics1.2.2 X-ray Optics

Double Crystal Offset Monochromator Motion

0.02 arcsecond resolution and repeatability (100 nrad)

Flexure Stages Piezoelectric Stages



KB Pair for 1 μm focusGrazing angle 0.2 DegB4C coatingHorz. Mirror 20 cmVert. Mirror 10 cmFocal spot size (FWHM in microns)

Horz: 0.6Vert: 0.9



XPP focusing opticsXPP focusing optics

LensMono

190 m 4 m



http://www.institut2b.physik.rwth-aachen.de/xray/applets/crlcalc.html

Be lens calculation for 10 micron focusFocal spot size including diffraction and roughnessFWHM in microns:

Horiz: 12.0Vert: 10.1

X-ray Optics J. B. Hastings

Documents

doe review

projection optics

reflectance precision

precision reflectometer

nm rmsk

beam size

nm rmsm1 mirror

nm equalline