X-parameters*ewh.ieee.org/r8/norway/ap-mtt/files/2010-1/Root_X... · 2010-11-02 · Stimulate port 1 with large tone at freq. f Stimulate port 2 with small tone at freq. f+ Δ Measure

X-parameters*:A new paradigm for measurement modeling andA new paradigm for measurement, modeling, and design of nonlinear microwave & RF components

Dr David E RootDr. David E. RootPrincipal R&D Scientist

High Frequency Technology CenterSanta Rosa, CA USA

IEEE MTT-S DML Lecture #2Bergen, Norway

May 7 2010

* X parameters is a trademark of Agilent Technologies Inc

May 7, 2010

© Copyright Agilent Technologies 2010

Page 1Page 1 D. E. RootD. E. RootX-parameter DML lecture Norway #2

May 7, 2010

* X-parameters is a trademark of Agilent Technologies, Inc.

Key Contributors

• Keith Anderson

• Loren Betts

• Radek Biernacki

• Jack Sifri

• Mary Lou Simmermacher

• Gary Simpson• Radek Biernacki

• Chad Gillease

• Daniel Gunyan

• Gary Simpson

• Franz Sischka

• Darlene Solomon

• John Harmon

• Jason Horn

• Tina Sun

• Yee Ping Teoh

• Yuchen Hu

• Masaya Iwamoto

• Mihai Marcu

• Dan Thomasson

• Jan Verspecht

• Kenn WildnauerMihai Marcu

• Troels Nielson

• Greg Peters

Kenn Wildnauer

• Jianjun Xu

• Yoshiyuki Yanagimoto


Page 2Page 2 D. E. RootD. E. Root

• Mark PierpointX-parameter DML lecture Norway #2

May 7, 2010

Outline

• Introduction: X-parameter Basics

• Survey of X-parameter benefits and applications

• Summary

• References and LinksReferences and Links



May 7, 2010

X-Parameters: Mainstream Nonlinear Interoperable TechnologyElectronic design

automation softwareAgilent Nonlinear Vector

Network Analyzer

Nonlinear Nonlinear

CustomerNonlinear

Simulation & DesignMeasurements

Customer Applications

Nonlinear Modeling



May 7, 2010

*11 , 11 , 11( ) ( ) ( )F S m n T m n

pm pm pm qn qn pm qn qnB X A X A P A X A P A− += + +

S-parameters Solve All Small-Signal ProblemsBut devices must operate linearlyp y

Reflected Transmitted

Incident ModelB1 S11A1 + S12A2

Measure

Agilent Vector Network AnalyzerS

B1 = S11A1 + S12A2

B2 = S21A1 + S22A2

g y

S-Parameters

ReflectedDesign

What about large-signal

nonlinear problems?

Reflected

Incident

1 2S_ParamSP1

Step=0.1 GHzStop=10.0 GHzStart=1.0 GHz

S-PARAMETERS

freq (1 000GHz to 26 00GHz)

$TC

700.

.S(2

,1)



May 7, 2010

nonlinear problems?freq (1.000GHz to 26.00GHz)

X-parameters Solve Nonlinear ProblemsSame use model as S-parameters, but much more powerfulp , p

Reflected Transmitted

Incident Model

Measure

X

11

, 11

*

( )

( )

( )

F mpm pm

S m npm qn qn

T m n

B X A P

X A P A

X A P A

−

+

=

+

+Nonlinear Vector Network Analyzer

X-Parameters, 11( )pm qn qnX A P A+

Reflected

Design

Reflected

Incident

1 2EDA Software



May 7, 2010

Capturing the imagination of the industry

Solves real-world problems now

Changing the way the industry worksp

Interoperable characterization, modeling and design

Continuous wave of innovations and award-winning modeling, and design

solutions

Potential to do for

a a d gresearch

nonlinear components and systems what S-parameters do forparameters do for linear components and systems



May 7, 2010

X-parameters: Hierarchical Design and Validation

T D D i S ifi ti ( t t il bl )

ESL

System IntegratorsBottom-up Measurement-based VerificationElectronic System Level Design

Top-Down Design Specifications (not yet available)

Bottom-up Simulation-based Verification

X-parameterSpecs

20092009

X tX-par analysisSimulator

20092009

X-par generator

X-pars X P

2009200920092009

C dNVNA 50 GHz

X-pars XnPcomponent

XnP: nativesimulation

load-dep X-parshi h X



May 7, 2010

Component vendors X-par meassimulationcomponent

high power X-pars

Introduction: NVNA measurements complex spectra and waveformscomplex spectra and waveforms

2 kA1kA

B 2kB

pkBpkA1kB 2k

Port IndexHarmonic Index

I I1I 2I



May 7, 2010

time time

Measurement-Based Modeling & Design Flow“X-parameters enable predictive nonlinear design from NL data”

NVNA ADSSimulation and DesignNonlinear Measurements

X parameters enable predictive nonlinear design from NL data

v2v1

ConnectorX1

MCA_ZX60_2522MCA_ZX60_2522_1fundamental_1=fundamental

MCA_ZFL_11ADMCA_ZFL_11AD_1fundamental_1=fundamental

RR1R=25 Ohm

V_1ToneSRC14

Freq=fundamentalV=polar(2*A11N,0) V

RR11R=50 Ohm DC_Block

DC_Block1DC_BlockDC_Block2

I_Probei2

I_Probei1

X-parameter blocks

Data File25

75

76

20

-15 150

X-parameters enable accurate nonlinear simulation under small to moderate mismatch. (See later for large mismatch)

Drag and drop

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-30

-20

-10

0

-40

10

.

.

-50

-40

-30

-20

-10

0

10

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

5

10

15

20

0

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

70

71

72

73

74

75

69

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-135

-130

-125

-120

-140

-115

2

4

6

8

10

12

14

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-80

-70

-60

-50

-40

-30

-90

-20

.

.

-100

-80

-60

-40

-20

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-40

-35

-30

-25

-20

-45

.

.

130

140

150

160

170

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

130

135

140

145

125

.

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

120

122

124

126

128

130

132

134

118

136

.

.

-10 -5 0 5 10 15-15 20

-30

-20

-10

0

10

-40

20

.

Drag and drop

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-60

-70

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

0

-2

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

-120

.

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

120

.

.

allowing prediction of component behavior in complicated nonlinear circuits. IMD / ACPR exact in narrow-band limit



May 7, 2010

“X-parameters: the same use model as S-parameters but much more powerful”

X-parameter Concept: Linearized Spectral Map around a Large-Signal Operating Point (LSOP)

Incident Port 1 Scattered Port 2Incident Port 1 Scattered Port 22 1 1 1 2 1 3 2 1 2 2 2 3( , , , , . . . , , , . . .)kB D C A A A A A A

Multi-variate NL map

≈

Simpler NL map

( )2 11( , , 0, 0, 0, ...)F

kX DC A

+Linear non analytic map

Simpler NL map

Linear non-analytic map( ) ( ) *2 , 11 2 , 11[ ( , ) ( , ) ]S T

k pj pj k pj pjX D C A A X D C A A+∑X-pars include exact nonlinear mapping to totally linear (S-pars) & everything in between



X pars include exact nonlinear mapping to totally linear (S pars) & everything in between Trade simplicity for accuracy.

May 7, 2010

X-parameter DML lecture Norway #2

X-parameters: What they are & where they come fromDC f

aj2

DC f0 2f0 3f0 4f0 5f0

A11

•Scattering of multiple incident large-amplitude waves.

•Can be simplified according•Can be simplified according to linear or nonlinear dependence on inputs (simplicity vs accuracy)( p y y)

•Measured on NVNA orgenerated in simulator

2

( )3, 2 j

Si jX a

2

( ) *3, 2 j

Ti jX a ( )

3F

iX•Rules for computing the response to general signals

generated in simulator

2j2, jj

0 15 f f− 0 1f f+03 f

, ,

( )11

( )( ), 1 11

*1(| |) (( ) )

ef g gh ef hef

S fF fe f

T f hgh

hghB X X A AA P a X P aP − + ⋅= +⋅+∑ ∑ 11( )j AP e ϕ=

given extracted X-parameters



May 7, 2010

, ,,,

ef g gh ef hefgg h h

Simplest X-parameters for a Power Amplifier( )( ) ( ) 2 *()( ) ( )( ) TF SXB AA A PAP X X A A+ +( )( )

21 11( )21,21

2 *21 11 21 2121 11,21 11()( ) ( )( ) TF SXB AA A PAP X X A A= + +

( )( )11 11

( )11,11

211 11 21 2121 11,21 11()( ) ( )( ) TF SXB AA A PAP X X A A= + +

40dB ( )

21 11FX A

( )F

X-parameters reduce to (linear) S-parameters in the appropriate limit

11

( )11 11 11| | 0

F

AX A s

→→

40

20 ( )21 21

SX11

( )21 11 21| | 0

F

AX A s

→→

( )S 11

( )11,21 11 12| | 0

( )S

AX A s

→→

0

-20

21,21

( )TX 11

( )11,21 11 | | 0

( ) 0T

AX A

→→

11

( )21,21 11 22| | 0

( )S

AX A s

→→11| |

-25 -20 -15 -10 -5 0 5 10-40

20 ( )21,21TX 11| | 0A →

11

( )21,21 11 | | 0

( ) 0T

AX A

→→



May 7, 2010

|A11| (dBm) X-parameters are a superset of S-parameters

X-parameter Experiment Design & Identification [1,14]

Stimulate port 1 with large tone at freq. fStimulate port 2 with small tone at freq. f + ΔMeasure response at three different frequencies

Take limit as D goes to zero

( ) 121 21 1,1( , )FX B f A P−=

Input Spectrum

21 11( )21 21

( , )S B f AX

+ Δ= Output Spectrum

f+Δf21,21

21( )A f + Δ

11 2121 11 2 ( )( ) ( , ) j A AT B f AX e φ −− Δ

Optimal and orthogonalf f+Δ

11 21( )( )21,21

21( )jX e

A fφ=

+ ΔSimilarly for harmonics

Optimal and orthogonalexperiment design and model identification



May 7, 2010

X-Parameters and the Harmonic Jacobian [1]X t th “ d li l ” f HB l i

From 1-tone HB analysis ( )11( )F m

pm pmX A B P−=

X-parameters are the “modeling analog” of HB analysisWrite model equations in language native to simulator algorithms

y 11( )pm pm

( ) ( ) pmS m n BX A P− + ∂

=( )

11 *( ) pmT m npm qn

BX A P

A− − ∂

=∂

11 12 21

, 11

, 0,... 0,...

( )pm qnqn A A A

X A PA

= =

=∂

from known Jacobian of 1-tone HB analysis.

11 12 21

, 11 *

, 0,... 0,..

( )pm qnqn A A A

A= =

∂

yJacobian comes from I-V and Gij, Cij from element constitutive relations

Never need 2-tone HB analysis. Faster, guaranteed spectrally linearMost of the terms in the required Jacobian are know ahead of time

( ) *( )11

)11

(11(| | ( ) )) (S f T f h

hh

hF f

fB X A P X A P AX A P A− += + +∑ ∑© Copyright Agilent Technologies 2010


May 7, 2010

, ,11,

1111,

, (| | ( ) )) (ef ghe ef ghf ghgh

gh hge fB X A P X A P AX A P A+ +∑ ∑

X-Parameter: How they are measured: Experiment Design & Identification (2): Ideal CaseExperiment Design & Identification (2): Ideal Case

E.g. functions for Bpm (port p, harmonic m) given small extraction tones Aqn (port q, harmonic n)

( ) ( ) ( ) *11 , 11 , 11( ) ( ) ( )F m S m n T m n

pm pm pm qn qn pm qn qnB X A P X A P A X A P A− += + +

Perform 3 independent experiments with fixed A11input Aqn output Bpm

( ) ( ) ( )(1) ( ) ( ) (1) ( ) (1)11 11 11

F m S m n T m npm pm pm qn qn pm qn qnB X A P X A P A X A P A− += + +

p qn pm

ImIm ( )(0) ( )

11F m

pm pmB X A P=

( ) ( ) ( )11 , 11 , 11pm pm pm qn qn pm qn qn

( ) ( ) ( )(2) ( ) ( ) (2) ( ) (2)*11 , 11 , 11

F m S m n T m npm pm pm qn qn pm qn qnB X A P X A P A X A P A− += + +Re

Re



May 7, 2010

X-parameter properties and benefitsStatic nonlinearity (AM-AM) at any/all CW frequenciesStatic nonlinearity (AM-AM) at any/all CW frequencies

High-frequency memory (AM-PM)

Large-signal output match (correct “Hot S22”)

Harmonics (even and odd) at input and output ports

PAE and DC currents / voltages at supply ports

Cascadable: distortion through chains of components Does for driven nonlinear systems what S-parameters do for linear systems

Hierarchical: apply to one component or multiple (e.g. multi-stage amp)pp y p p ( g g p)

Transportable: mismatch at fundamental and harmonics taken into account

Can be used to simulate some long-term memory affects g y

Can be generated from Simulation and Measurement

Highly automated experiment design & model identification



May 7, 2010

g y p g

Outline

• Introduction: X-parameter Basics

• Survey of X-parameter benefits and applications– Cascading nonlinear blocks– Integrating handset amplifier into cell phone (customer example)

Load dependent X parameters and their harmonic tuning capability– Load-dependent X-parameters and their harmonic tuning capability– High power X-parameter measurements– X-parameter generation from detailed schematics in ADS– X-parameter simulation component (XNP) built-in to ADS– Dynamic X-parameters: Long-term memory research

• Summaryy

• References and Links



May 7, 2010

Measurement-based nonlinear design with X-parameters

ZFL-AD11+11dB gain, 3dBmmax output power

SourceConnector

80 psdelay

ZX60-2522M-S+23.5dB gain, 18dBm

max output powerLoad

v2v1

ConnectorX1

MCA_ZX60_2522MCA_ZX60_2522_1fundamental 1=fundamental

MCA_ZFL_11ADMCA_ZFL_11AD_1fundamental 1=fundamental

RR1R=25 Ohm

RR11R=50 Ohm DC_Block

DC_Block1DC_BlockDC_Block2

I_Probei2

I_Probei1

fundamental_1 fundamentalfundamental_1 fundamental

V_1ToneSRC14

Freq=fundamentalV=polar(2*A11N,0) V Amplifier Component Models from individual X-parameter measurements



May 7, 2010

ResultsCascaded Simulation vs. MeasurementCascaded Simulation vs. Measurement

Red: Cascade MeasurementBlue: Cascaded X-parameter SimulationLight Green: Cascaded Simulation No X(T) termsLight Green: Cascaded Simulation, No X(T) termsDark Green: Cascaded Models, No X(S) or X(T) terms

34

36

1])

::,1]

)T

[::,1

])

Fundamental Gain

74

76

]))1]))

,1])

):,1

]))

Fundamental Phase

30

32

34

dB(b

2[::,

1]/a

1[::,

1])

B(b

2ref

[::,1

]/a1r

ef[::

,b2

NoT

[::,1

]/a1N

oT[:

2NoS

T[::

,1]/a

1NoS

T

70

72

74

wra

p(ph

ase(

b2[::

,1]

wra

p(ph

ase(

b2re

f[::,

rap(

phas

e(b2

NoT

[::ap

(pha

se(b

2NoS

T[:

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

28

26

Pinc

dBdB

(bdB

(b2

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

68

66

Pinc

unw

Pincref

unw

unw

run

wra



May 7, 2010

ResultsCascaded Simulation vs. MeasurementCascaded Simulation vs. Measurement

Red: Cascade MeasurementBlue: Cascaded X-parameter SimulationLight Green: Cascaded Simulation, No X(T) termsgDark Green: Cascaded Models, No X(S) or X(T) terms

Fundamental % Error Second Harmonic % Error

0*2]

6

8

10

12

::,1

])/b

2ref

[::,

1]*1

00ef

[::,

1])/

b2re

f[::

,1]*

1re

f[::

,1])

/b2r

ef[:

:,1]

*

60

80

100

[::,

2])/

b2re

f[::

,2]*

10re

f[::

,2])

/b2r

ef[:

:,2]

2ref

[::,

2])/

b2re

f[::

,2

28 26 24 22 20 18 16 14 12 10 8 630 4

2

4

6

0

(b2[

::,1

]-b2

ref[

:(b

2NoT

[::,

1]-b

2re

(b2N

oST

[::,

1]-b

2r

28 26 24 22 20 18 16 14 12 10 8 630 4

20

40

0(b

2[::

,2]-

b2re

f[(b

2NoT

[::,

2]-b

2r(b

2NoS

T[:

:,2]

-b2

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

Pinc

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6-30 -4

Pinc

“X-parameters enable predictive nonlinear design from NL data”



May 7, 2010

X-parameters solve key, real customer problems Example: GSM amp. and cell phone integrationH l IEEE E Mi C f A d O b 2008Horn et al IEEE European Microwave Conference, Amsterdam, October 2008

F d t l b t t 2

Red Elliptical shape: X-parameter predictionBlue circular shape Hot S22 prediction

Fundamental b-wave at port 2

-1 2

-1.1

-1

Measurementssmall colored crossesSkyworks amp

-1.5

-1.4

-1.3

-1.2

Imag

0 0.2 0.4Real

-1.7

-1.6

“X-parameters predict output match under large input drive Hot S does not”

Allowed Sony-Ericsson to take into account second-harmonic mismatch on amp in system integration



May 7, 2010

input drive Hot S22 does not

Complete X-parameter Model of GSM Amplifier“We didn’t think this was possible”“We didn’t think this was possible” – Sony-Ericsson engineer Joakim Eriksson, Ph.D

Unprecedented capability

1015

Output Voltage

Unprecedented capabilityData acquisition 30x faster

.

-10-505

10

-15

Volts

02

-2

4

Volts

TX_Enable

VAPC

1 2 3 4 5 6 7 8 9 10 11 12 13 14 150 16

0.51.01.5

0.0

2.0

Time (ms)

Volts



May 7, 2010

( )

“X-parameters provide a nonlinear electronic interactive datasheet based on data”

Load-dependence of another GSM commercial Amp from X-parameters measured at only 50 ohms 900 MHz Vbatt=3.7, Vapc = 1.4

System Integrator wants to use X-parameters to compareperformance among vendor parts within their system

Pout, 1dBm contour spacingm7IndexPout2=$LPData ZPout2=0 010 / 40 002

28.000m8indep(m8)=Pdel contours p 0 040 / 137 001

12 Red: LoadPull measurementsBl Si l ti i X

p g p y

$LPData..ZPout2=0.010 / -40.002Pout2=34.364350impedance = Z0 * (1.015 - j0.012)

Pdel_contours_p=0.040 / -137.001level=34.364350, number=1impedance = Z0 * (0.942 - j0.051)

Blue: Simulations using X-parameters extracted in 50 ohms

m7m8 50 ohm X-parameters, predict performance well over a wide range of impedance

But what if we want even more accuracy?



May 7, 2010

X-parameters with load-dependence

1 1 11 12 21 22( , , , ..., , , ...)k kB F DC A A A A=

2 2 11 12 21 22( , , , ..., , , ...)k kB F DC A A A A=

2kA1kA

Port IndexHarmonic (or carrier) Index

1kB 2kBX-parameters allow us to simplify the general B(A) relations:Trade efficiency, practicality, for generality & accuracyPowerful, correct, and practical

,,

( ) *1

( )11

,1

( ), 1

,1( ,| |) ), ( ,( )

ef gef gh hef

S f hgh

g h

T f hg

F fe

g hf hB X DC A X DP C A DC A P AP A X +− ⋅= + +⋅∑ ∑

, , p

, ,

( )11 21

( ), 11

( ) *11 21

,1

,2 ( , ,| |,( ,| ( , ,| |,|,| ) )| ),

ef ghghf efe

F fe f

S f h T f hg

hgh

g hh

g

B X DC A A X DC A X DC AA A AP AP Pθθθ − += + + ⋅⋅∑ ∑

,,

( )11 2

,

( ) *( ), 1 2 1

,1 1 2( , , ) (( ,| , ,|, ) )

ef ef f ghg eh

S f hgh

g

T f hgh

gh

F f

he f X DC XAB X DC A AP DP C AA P− += Γ + + Γ ⋅Γ ⋅∑ ∑


Page 25Page 25 D. E. RootD. E. RootMay 7, 2010

“X-parameters unify S-parameters and Load-Pull”X-parameter DML lecture Norway #2

NVNA+Load-Pull = Instant Large-Signal Model

• Drag and drop measured X-parameters for immediate ADS simulation “This is a breakthrough for the industry.”

– Gary Simpson Maury Microwavey p y

NVNA +Load-Pull



May 7, 2010

Load-Dependent X-Parameters of a FETWJ FP2189 1W HFET

G. Simpson et al IEEE ARFTG Conference, December, 2008

15

20

0.25

0.30

Me

ag

eg

e Sim

Measured and Simulated Voltage and Current Waveforms

Measurements X-par Simulation

Pout Contour (dBm)

WJ FP2189 1W HFET

0

5

10

0.10

0.15

0.20

ea

sure

dC

urre

ntM

ea

sure

dV

olta

Sim

ula

ted

Vo

lta

mu

late

dC

urre

nt

0.2 0.4 0.6 0.80.0 1.0

-5 0.05

time, nsec

Measured and Simulated Voltage and Current Waveforms0 30

Measured and Simulated Dynamic Load Line

8

10

12

14

16

0.2

0.3

0.4

0.5

Me

asu

red

Cu

sure

dV

olta

ge

late

dV

olta

ge S

imu

late

dC

u0.15

0.20

0.25

0.30

asu

red

Cur

ren

tm

ula

ted

Cu

rre

nt

0.2 0.4 0.6 0.80.0 1.0

4

6

2

0.1

0.0

time, nsec

urre

ntM

ea

sS

imu

urre

nt

0 2 4 6 8 10 12 14 16-2 18

0.10

0.05

MeasuredVoltage

Me

SimulatedVoltage

Sim

E i t l H i B l X t if S t d l d ll



Experimental Harmonic Balance X-parameters unify S-parameters and load-pull


Harmonic Load-Tuning Predictions from X-parametersHorn et al, IEEE Power Amplifier Symposium, September, 2009

Fundamental Output Magnitude Second Harmonic Output Magnitude

, p y p , p ,

Cree CGH40010 10 W RF Power GaN HEMT

Contours vs. 2nd Harmonic Load (Fixed input power and fundamental load)

X-Parameter Prediction: Blue

)

Measured with Harmonic LP System: RedKey Agilent IP calibrates out uncontrolled harmonic impedances presented by tuner &re-grids impedance data for accuracy and interpolation in ADS



May 7, 2010

Harmonic load-pull may be unnecessary! Simpler, cheaper, faster alternatives exist

Simple SetupFast, automated measurementsTime-domain waveforms

Load-dependent X-parameters as a measurement-based device model“The data is the model”The data is the model

Useful for:• High-power device characterization• X-parameter transistor modelsp• multi-stage amps w. large mismatch

Control power, frequency, bias and load at fundamental frequency: faster, fewer d t i l t th h i L Pdata, simpler setup than harmonic L-P

• Get sensitivity to harmonic loads at output and input ports without having to control harmonic impedances

• Estimate the effects of source-pull on device performance in ADS without having



May 7, 2010

to control source impedance

Load-dependent X-parameters versus harmonic load-pull Root et al INMMiC Conference, April, 2010versus harmonic load pull

Load-dependent X-pars Harmonic load-pull validation

Root et al INMMiC Conference, April, 2010Horn et al submitted to IEEE CSICS2010

• One output tuner to vary load at fundamental frequency. At each load inject small tones at 2nd and

• Three output tuners to vary loads at fundamental, second, and third harmonics j

3rd harmonic freqs(9x(1+2x2) = 45 measurements,actually ~99 measurements)

independently (9x9x9 = 729 measurements)

actually ~99 measurements)

• Measured DC – 4th harmonic • Measured DC - 4th harmonic

• Take into ADS. Present 729 independent loads to model



May 7, 2010

Compare waveforms, PAE, dynamic load-lines, etc.

Load-dependent X-parameter model for GaN HEMT:

GPIB

Bias

Cree CGH40010 G N HEMTPNA‐X

MDC S l

Bias Tees

NVNA

GaN HEMT10 W packaged

transistor Maury Software

U

DC Supply NVNA Firmware

• 900 MHz• Measure Load-dependent

DUT Maury Tuner

USB

Maury Tuner

X-parametersvs power at 9 impedances

• 4 harmonics measured2 d 3 dTunerTuner

9 load states x 3 x 2• probe tones at 2nd and 3rd

harmonics• harmonic impedancesuncontrolledX-parameter file taken into ADS



May 7, 2010

uncontrolledpfor independent validation

Harmonic Load-pull Setup: For Validation Only

J. Horn et al Submitted to CSICS2010

•Waveforms measured

PNA‐X

GPIB

Bias Tees

•Waveforms measured versus power at each set of 729 harmonic loads as controlled independently

Maury Software

DC Supply NVNA Firmware

by the tuners.•Fundamental, second, and third complex impedances setSoftware

USB

Firmware impedances set independently

DUT Maury Tuner Z1

Maury Tuner

Maury Tuner Z2

Maury Tuner Z2



May 7, 2010

9 states 9 states 9 states

Load-dependent X-parameters versus harmonic load-pullversus harmonic load pull

Load-dependent X-pars Harmonic load-pull validation• One output tuner to vary load at

fundamental frequency. At each load inject small tones at 2nd

• Three output tuners to vary loads at fundamental, second, and third harmonics j

and 3rd harmonic freqs(9x(1+2x2) = 45 measurements,actually ~125 measurements)

independently (9x9x9 = 729 measurements)

actually ~125 measurements)

• Measured DC – 4th harmonic • Measured DC - 4th harmonic

• Take into ADS. Present 729 independent loads to model



May 7, 2010

Compare waveforms, PAE, dynamic load-lines, etc.

Prediction of GaN HEMT harmonic-load dependencefrom fundamental-only load-dependent X-pars

60

70

80

PAE

Courtesy of J. Horn J. Horn et al, submitted to CSICS2010

30

40

50Z1Z2 Z3 Cree

Harmonic loads

6 8 10 12 14 16 184 20

20

10

CGH40010 GaN HEMT

Pin (available)2.0

y

Id [A] 70 2.0

Vd VdId

0.5

1.0

1.5

Id [A]

30

40

50

60

0 5

1.0

1.5

Vd IdVdId

10 20 30 40 50 600 70

0.0

-0.5

Vd [V]X t d l

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

10

20

30

0

0.0

0.5

-0.5

Time (nanoseconds)




X-parameter model Harmonic time-domain load-pull measurements

Time (nanoseconds)


50

60

70

ZCree

CGH40010

PAE

20

30

40Z1Z2 Z3

CGH40010 GaN HEMT Harmonic loads

6 8 10 12 14 16 184 20

10

2.0

y a c oad e

Pin (available)70 2.0

VdId

VdId

1.0

1.5Id [A]

30

40

50

60

1.0

1.5

Vd

0.0

0.5

0.5

0

10

20

-10

0.0

0.5

-0.5



0 10 20 30 40 50 60-10 70

May 7, 2010


Vd [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

Time (nanoseconds)

70

PAE vs. Available Input Power


50

60

70

Cree CGH40010

PAE

20

30

40Z1Z2 Z3

CGH40010 GaN HEMT Harmonic loads

6 8 10 12 14 16 184 20

10

y 60

70

1 5

2.0

Vd IdVdId

Pin (available)

0 5

1.0

1.5

2.0

30

40

50

60

0.5

1.0

1.5

Id [A]

-0.5

0.0

0.5

-1.0

10

20

0

-0.5

0.0

-1.0



10 20 30 40 50 600 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.4

May 7, 2010


Vd [V] Time (nanoseconds)


50

60

70

PAE

20

30

40

_Z1Z2 Z3

Cree CGH40010

Harmonic loads

6 8 10 12 14 16 184 20

10

70 2.0

2.0

GaN HEMT

Id Vd VdId

Pin (available)

30

40

50

60

0 5

1.0

1.5

1.0

1.5

Id [A] Vd IdVdId

0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6 1 8 2 0 2 20 0 2 4

10

20

30

0

0.0

0.5

-0.5

0.0

0.5

-0.5



0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.0 2.410 20 30 40 50 600 70

0.5

May 7, 2010


Vd [V] Time (nanoseconds)

Summary: Fundamental-only load-dependent X-parametersFundamental only load dependent X parameters• Full two-port nonlinear functional block model for simulation

A t f l d t i d d f d i f– Accounts for load-tuning dependence of device performance without the requirement of independently controlling harmonic loads

– Use to design matching networks, multi-stage amps, Doherty amps., …

• Large data / time reduction compared to harmonic load-pullX t d l l li l i b f l d N• X-parameter model scales linearly in number of loads N

• Harmonic L-P scales as H = no. of controlled harmonic loads

• Harmonic load pull may be unnecessary

HN• Harmonic load-pull may be unnecessary

– Validates “principle of harmonic superposition” (Verspecht et al 1997) – Source-pull unnecessary (Horn et al submitted to CSISC 2010])



May 7, 2010

Source pull unnecessary (Horn et al submitted to CSISC 2010]) except for power transfer

X-parameters at 100W(courtesy K. Anderson) Gain Compression at fundamental

Mini-Circuits ZHL-100W-52

51.0

51.5

100 MHzParameter Description

P t N b ZHL 100W 52

50.0

50.5

/a1

[::,1

])

Part Number ZHL-100W-52

Pout max(@1dB compression)

45dBm (min, 50M-500MHz)47dBm (typ, 50M-500MHz)

49.0

49.5

dB

(b2[

::,1]

/

Pout max(@3dB compression)

46.5dBm (min, 50M-500MHz)48.5dBm (typ, 50M-500MHz)

48.0

48.5

47 5

Pin max (no damage)

+3dBm

Gain 48dB (min)50dB (typ)

-18 -16 -14 -12 -10 -8 -6 -4 -2-20 0

47.5

pinInput VSWR 1.45:1 (typ)

Output VSWR 2.5:1 (typ)X-parameters have been

d t 250 W© Copyright Agilent Technologies 2010


May 7, 2010

measured at 250 W

X-parameters at 100W

XS21,21

5 harmonics magnitude and phase:XT21,21

5 harmonics, magnitude and phase: fund=150 MHz

200 4

XS23,21

50

100

150

200

1

2

3

4

x,re

al_i

ndex

,::])

ts(Iload.i[imag_in

XT23,21

-150

-100

-50

0

-3

-2

-1

0

ts(v

load

[imag

_ind

ex

ndex,real_index,::])



May 7, 2010

2 4 6 8 10 12 14 16 180 20

-200 -4

time, nsec

t

Generate an IP-Protected X-parameter model

Slid t f J Sif i



Slide courtesy of J. Sifri


Single Tone Amp model with 50 ohm loadIP protected model; Fast X parameter simulation component (20x faster)IP-protected model; Fast X-parameter simulation component (20x faster)

X-pars Vs ckt-level PA Results

Test the PA circuit




Soon: Two-tone X-parameter NVNA measurements

•Magnitude and Phase of intermod products and sensitivity to mismatch•Measure and simulate freq-dependence & asymmetry of complex intermodsD i li i it th t l di t ti•Design nonlinear circuits that cancel distortion

•ADS X-parameter generator and XnP component can do this already

Red = 2‐Tone X‐parameters predictionBl I d d t d d t

Courtesy J. Horn

-22

-21

-20

(dB

m)

-22

-21

-20

(d

Bm

)

Blue = Independent measured data

26

-25

-24

-23

IM3

_L

ow

-25

-24

-23

-22

IM3

_H

igh

1.0

E6

2.0

E6

3.0

E6

4.0

E6

5.0

E6

6.0

E6

7.0

E6

8.0

E6

9.0

E6

0.0

1.0

E7

-26

-27 1.0

E6

2.0

E6

3.0

E6

4.0

E6

5.0

E6

6.0

E6

7.0

E6

8.0

E6

9.0

E6

0.0

1.0

E7

-25

-26



May 7, 2010

Tone Spacing Tone Spacing

3-Port X-parameter Measurements

For characterization and measurement-based simulation of three-port components (mixers, converters, switches)

Note: ADS can already generate and simulate with multi-port, multi-tone X t

V4

4GND I4

X-parameters

Here A and B

1 2A1

B1

A2

B2

waves include multiple spectral components

3

A3B3



May 7, 2010

33

Multi-tone, Multi-port X-parameters: Two large signals at different frequencies at different portssignals at different frequencies at different portsLess restrictive approximation to the general theory:Linearization around the multi-tone nonlinear responses

1A1

2BTerms linear in the

remaining components( )

, , 1,10 2 ,01( , , 0, 0, ...)Fi kl i klB X A A= +



May 7, 2010

Mixers: X-parameters extracted from an Agilent DC-50 GHz InP-based Mixer 1GC1-8068: Mismatched (10 Ohms) at IFAccurate fast IP protectedAccurate, fast, IP-protected

Gain (dB) Phase (deg)Down

Conversion

UpCConversion

LO: 45 GHz RF: 45.1 GHz LO power = 3.5 dBmSi l ti b d



May 7, 2010

LO: 45 GHz RF: 45.1 GHz LO power 3.5 dBmCircuit Model (solid blue) X-parameter Model (red points)Simulation-based

Mixers: X-parameters extracted from an Agilent DC-50 GHz InP-based Mixer 1GC1-8068: Mismatched (10 Ohms) at IFAccurate, fast, IP-protected

Gain (dB) Phase (deg)Down

Conversion

UpUpConversion




May 7, 2010

LO: 45 GHz RF: 45.1 GHz LO power 3.5 dBmCircuit Model (solid blue) X-parameters (red points)Simulation-based

Two Fundamentals: 50 GHz Integrated Mixer Mismatched load (10 Ohms) at IFMismatched load (10 Ohms) at IF

Gain (dB) Phase (deg)LO

Leakageg

RFRFLeakage




May 7, 2010

LO: 45 GHz RF: 45.1 GHz LO power 3.5 dBmCircuit Model (solid blue) X-parameter Model (red points)Simulation-based

Agilent MMICs: Available for purchase

50 GHz InP-based Mixer Part number: 1GC1-8068Part number: 1GC1-8068

See: http://www.agilent.com/find/mmic

X-parameters available



May 7, 2010

Design Nonlinear RF Systems

Antenna

LTCC LPF

RFICMMIC PA

Simulation speedup of 20x to 100x



Simulation speedup of 20x to 100x


X-Parameter technology available in commercial EDA SW

Available Today

Available Soon Available



May 7, 2010

TodaySoon

Extending X-parameters to long-term memoryOriginal X-parameters are Static Spectral Mappings

Static transmission

NVNA

Original X parameters are Static Spectral Mappings

Can be measured under

Slides courtesy J. Verspecht

Static transmission X-parameter: XF21

Can be measured under True CW, pulsed DC orPulsed RF conditions

A1 B2

time

1 2

B2

XF21

F D i

A1( ) ( )1

1212AjeAXFB ϕ=

Frequency Domain:



May 7, 2010

1

Modulation Simulated in Envelope Domain:

A1(t) B2(t)ADS envelope simulator

t tt t

XF2121B2

( ) ( ))(1212

1)()( tAjetAXFtB ϕ=Envelope Domain:

A

( )1212 )()(X-parameters determine Quasi-Static Response

No “BW” effects



May 7, 2010

A1Symmetric intermods independent of envelope rate (or history)

Memory Effects: Beyond Static X-parametersMemory Effects:

When output depends not only in instantaneous input but also on past input values

• Response to fast input envelope variations may violate quasi-static assumption for useResponse to fast input envelope variations may violate quasi static assumption for use in envelope domain for estimation of response to modulated signals

• Physical causes of memory: Dynamic self-heating, bias-line interaction, trapping effects caused by additional dynamic variables – multiple time-scale problem

Hysteresis in compression plotIM3 products asymetricDepend on tone spacing

HBT IM3 [dB ] t ti [H ] GHBT IM3 [dBm] versus tone separation [Hz] Gain-compression



May 7, 2010

Dynamic X-parameters: Long-Term MemoryF d t l “hidd i bl ” th Anadigics AWT6282

ain

Fundamental “hidden variable” theoryVerspecht et al “Extension of X-parameters to include long-term dynamic memory effects,” IEEE MTT-S Int’l Microwave Symposium Digest, 2009. pp 741-744

Anadigics AWT6282

Vol

tage

Ga

( ) ( ) ( )( )tAjeduuutAtAGtAXFtB ϕ

⎭⎬⎫

⎩⎨⎧

−+= ∫∞

021 ,)(,)()()(

A1 (V)

3.2

3.3

V)

3.0

3.1

B2

Am

plitu

de (V

17

-14

184 186 188 190 192 194 196 198182 200

2.9

Time (µs)Measured Data: RedMemory model prediction: Blue

-23

-20

-17

Sim

IM3

Mea

sIM

3



May 7, 2010

Memory model prediction: BlueStatic X-parameter prediction: Magenta-4.0E6 0.0 4.0E6-8.0E6 8.0E6

-26

Offset Frequency

Dynamic X-parameters Beyond Quasi-Static

|B (t)|

comparison• Pulsed Envelope NVNA extraction• Prototyped in ADS• Not yet commercialized

B (t)|A(t)|

|Bmeas (t)|Not yet commercialized

A(t)Bmeas(t)

t |Bsim(t)|B i (t)B2 t | sim( )|Bsim(t)

t

( ) ( ) ( )( )tAjeduuutAtAGtAXFtB ϕ⎬⎫

⎨⎧

−+= ∫∞

21 ,)(,)()()(ADS envelope simulatorA1



( ) ( ) eduuutAtAGtAXFtB⎭⎬

⎩⎨ + ∫

021 ,)(,)()()(

May 7, 2010

Dynamic X-parameters Predict Memory Effects0.5|B|

0.4

0.5|B|Vpeak 60kHz Tone Spacing

Courtesy

ZFL11AD AmpF0= 1.75GHz

0.2

0.3

yJ. Verspecht

0.0

0.1

30kHz Tone Spacing

0.00 0.05 0.10 0.15

|A| (Vpeak)Measurement 60kHz Tone Spacing Measurement 30kHz Tone SpacingModel 60kHz Tone Spacing Model 30kHz Tone Spacing

See Latest Research Results on Dynamic X-parametersJ. Verspecht, J. Horn, D. E. Root “A Simplified Extension of X-parameters to Describe Memory Effects for Wideband Modulated Signals”



May 7, 2010

to Describe Memory Effects for Wideband Modulated Signals ARFTG Conference Session 2-1 Friday, May 28, 2010 10:20AM (Hilton)

X-parameter universe is expanding rapidlyPowerful, practical interoperable solutions for nonlinear

Summary:characterization, modeling, and design of microwave and RF

X-parameters: “doing for nonlinear components and systems what S-parametersdo for linear components and systems”

• X-parameters for GSM amp.• Load-dependent X-parameters

Applications

• 50 GHz Agilent NVNA• High-Power X-parameter meas.• X-parameter generator in ADS• XnP component in ADS• Two-tone measured X-pars• Three-port measured X-pars

Memory: Dynamic X params• Memory: Dynamic X-params• Device modeling• Education, training, app. notes• Industry is adopting paradigm



May 7, 2010

Industry is adopting paradigm

X-Parameters: Agilent Completes the Nonlinear Puzzle!Electronic design

automation softwareAgilent Nonlinear Vector

Network Analyzer

Nonlinear Nonlinear

CustomerNonlinear

Simulation & DesignMeasurements

Customer Applications

Nonlinear Modeling



May 7, 2010

*11 , 11 , 11( ) ( ) ( )F S m n T m n

pm pm pm qn qn pm qn qnB X A X A P A X A P A− += + +

Selected References and Links1 D E Root J Horn L Betts C Gillease J Verspecht “X-parameters: The new paradigm for measurement modeling and design1. D. E. Root, J. Horn, L. Betts, C. Gillease, J. Verspecht, X-parameters: The new paradigm for measurement, modeling, and design

of nonlinear RF and microwave components,” Microwave Engineering Europe, December 2008 pp 16-21. http://www.nxtbook.com/nxtbooks/cmp/mwee1208/#/16

2. D. E. Root, “X-parameters: Commercial implementations of the latest technology enable mainstream applications” Microwave Journal, Sept. 2009, http://www.mwjournal.com/search/ExpertAdvice.asp?HH_ID=RES_200&SearchWord=root

3. J. Verspecht and D. E. Root, “Poly-Harmonic Distortion Modeling,” in IEEE Microwave Theory and Techniques Microwave Magazine June 2006Magazine, June, 2006.

4. D . E. Root, J. Verspecht, D. Sharrit, J. Wood, and A. Cognata, “Broad-Band, Poly-Harmonic Distortion (PHD) Behavioral Models from Fast Automated Simulations and Large-Signal Vectorial Network Measurements,” IEEE Transactions on Microwave Theory and Techniques Vol. 53. No. 11, November, 2005 pp. 3656-3664

5. Verspecht, J.; Horn, J.; Betts, L.; Gunyan, D.; Pollard, R.; Gillease, C.; Root, D.E.; “Extension of X-parameters to include long-term dynamic memory effects,” IEEE MTT-S International Microwave Symposium Digest, 2009. pp 741-744, June, 2009

6. J. Verspecht, J. Horn, D. E. Root “A Simplified Extension of X-parameters to Describe Memory Effects for Wideband Modulated p , , p p ySignals,” Proceedings of the 75th IEEE MTT-S ARFTG Conference, May, 2010

7. J. Xu, J. Horn, M. Iwamoto, D. E. Root, “Large-signal FET Model with Multiple Time Scale Dynamics from Nonlinear Vector Network Analyzer Data,” IEEE MTT-S International Microwave Symposium Digest, May, 2010.

8. J. Horn, S. Woodington, R. Saini, J. Benedikt, P. J. Tasker, and D. E. Root; “Harmonic Load-Tuning Predictions from X-parameters,” IEEE PA Symposium, San Diego, Sept. 2009

9. D. Gunyan , J. Horn, J Xu, and D.E.Root, “Nonlinear Validation of Arbitrary Load X-parameter and Measurement-Based Device y y pModels,” IEEE MTT-S ARFTG Conference, Boston, MA, June 2009

10. G. Simpson, J. Horn, D. Gunyan, and D.E. Root, “Load-Pull + NVNA = Enhanced X-Parameters for PA Designs with High Mismatch and Technology-Independent Large-Signal Device Models, ” IEEE ARFTG Conference, Portland, OR December 2008.

11. J. Horn, J. Verspecht, D. Gunyan , L. Betts, D. E. Root, and Joakim Eriksson, “X-Parameter Measurement and Simulation of a GSM Handset Amplifier,” 2008 European Microwave Conference Digest Amsterdam, October, 2008

12. J. Verspecht, D. Gunyan, J. Horn, J. Xu, A. Cognata, and D.E. Root, “Multi-tone, Multi-Port, and Dynamic Memory Enhancements to PHD Nonlinear Behavioral Models from Large-Signal Measurements and Simulations,” 2007 IEEE MTT-S Int. Microwave Symp. Dig., Honolulu, HI, USA, June 2007.

13. http://www.agilent.com/find/x-parameters for X-parameters14. http://www.agilent.com/find/nvna for NVNA15. http://www.agilent.com/find/mmic for Agilent MMICs16. http://www.agilent.com/find/x-parameters-info for information about X-parameter open standards



May 7, 2010

X-parameters*ewh.ieee.org/r8/norway/ap-mtt/files/2010-1/Root_X... · 2010-11-02 · Stimulate port 1 with large tone at freq. f Stimulate port 2 with small tone at freq. f+ Δ Measure

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