WSD2050DN N DFN3X3-8 20V 40A(1)

Symbol Parameter Rating Units

VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V

ID@TC=25 Continuous Drain Current, VGS @ 10V1 40 A

ID@TC=100 Continuous Drain Current, VGS @ 10V1 28 A

IDM Pulsed Drain Current2 85 A

IAS Avalanche Current 14 A

PD@TC=25 Total Power Dissipation4 28 W

TJ Operating Junction Temperature Range -55 to 150

Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 70 /WRθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 50 /W

RθJC Thermal Resistance Junction-Case1 --- 4.7 /W

BVDSS RDSON ID

20V 8.2mΩ 40A

Absolute Maximum Ratings

General Description

Features

Applications

High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System Load Switch

DFN3.3x3.3-8_EP1 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available

Product Summery

WSD2050DN

Page 1www.winsok.tw Dec.2014

Thermal Data

The WSD2050DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

The WSD2050DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

N-Ch MOSFET

TSTG

185

WSD2050DN

Page 2www.winsok.tw Dec.2014

N-Ch MOSFET

Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V

BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA -- 0.0---- --- V/

RDS(ON) Static Drain-Source On-Resistance2

VGS=10V , ID=7A --- 8.2 14mΩ

VGS=4.5V , ID=6A --- 9.5 16

Gate Threshold Voltage VGS=VDS , ID =250uA 0.4 0.6 1.0 V

IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25 ---- 1

uA VDS=20V , VGS=0V , TJ=55 ---- 5

IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V ---- ±100 nA

gfsgf orwar Trd ansconductance VDS=5V , ID=7A --- ---

Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 1.5 Ω

Qg Total Gate Charge (4.5V)

VDS=15V , VGS=10V , ID=7A

10 12

nC Qgs Gate-Source Charge 3.5 4.1

Qgd Gate-Drain Charge 4.2 4.7

Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=6Ω

ID=1A ,RL=15Ω

9 17

ns Tr TRise ime 11 23

Td(off) Turn-Off Delay Time 29 52

Tf TFall ime 7 12

Ciss Input Capacitance

VDS=15V , VGS=0V , f=1MHz

1200

pF Coss Output Capacitance

Crss Reverse Transfer Capacitance

Symbol Parameter Conditions Min. Typ. Max. Unit Continuous Source Current1,6 VG=VD=0V , Force Current ---- 20 A

Diode Forward Voltage2 VGS=0V , IS=2A , TJ=25 ---- 1.2 V

6.

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A4.The power dissipation is limited by 150 junction temperature 5.The Min. value is 100% EAS tested guarantee.

The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 , unless otherwise noted)

Diode Characteristics

----

----

----

----

----

----

----

----

--------

----

----

----

----

----

20

VGS=2.5V , ID=5A --- 12.5 20mΩ

VGS=1.8V , ID=2A --- 18 28

VGS(th)

S

IS

VSD

----

113

----

----

Typical Characteristics

WSD2050DN

Page 3www.winsok.tw Dec.2014

N-Ch MOSFET

1752

10

0

0

3

6

9

12

15

0 0.5 1 1.5 2

I D(A

)VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

6

8

10

12

14

16

18

20

0 3 6 9 12 15

RD

S(O

N)(m

Ω ΩΩΩ)

ID (A)Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

0.8

1

1.2

1.4

1.6

0 25 50 75 100 125 150 175

Nor

mal

ized

On-

Res

ista

nce

Temperature (°C)n18 TFigure 4: On-Resistance vs. Junctio emperature

VGS=2.5VID=6A

VGS=4.5VID=8A

25°C

125°C

VDS=5V

VGS=1.8V

VGS=4.5V

0

10

20

30

40

50

0 1 2 3 4 5

I D(A

)

VDS (Volts)Fig 1: On-Region Characteristics (Note E)

VGS=1.5V

1.8V4.5V

2.5V3.5V

VGS=2.5V

VGS=1.8VID=4A

VGS=1.5V

VGS=1.5VID=1A

40

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0 1.2

I S(A

)

VSD (Volts)Figure 6: Body-Diode Characteristics (Note E)

25°C

125°C

((NNoottee EE))

0

5

10

15

20

25

0 2 4 6 8 10

RD

S(O

N)(m

Ω ΩΩΩ)

VGS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

ID=8A

25°C

125°C

WSD2050DN

Page 4www.winsok.tw Dec.2014

N-Ch MOSFET

1752

10

0

0

1

2

3

4

5

0 3 6 9 12 15

VG

S(V

olts

)

Qg (nC)Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

1200

1400

1600

1800

0 5 10 15 20

Cap

acita

nce

(pF

)

VDS (Volts)Figure 8: Capacitance Characteristics

Ciss

0

40

80

120

160

200

0.0001 0.001 0.01 0.1 1 10

Pow

er (

W)

Pulse Width (s)n18cFigure 10: Single Pulse Power Rating Ju tion-to-

Coss

Crss

VDS=10VID=8A

TJ(Max)=150°CTA=25°C

10µs

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

I D(A

mps

)

VDS (Volts)

10µs

10ms

1ms

DC

RDS(ON)limited

TJ(Max)=150°CTA=25°C

100µs

40

Ambient (Note F)

0.001

0.01

0.1

1

10

1E-05 0.0001 0.001 0.01 0.1 1 10 100

Z θ θθθJ

CN

orm

aliz

ed T

rans

ient

T

herm

al R

esis

tanc

e

Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

TonT

PD

In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

D=Ton/TTJ,PK=TC+PDM.ZθJC.RθJC

RθJA=80°C/W

WSD2050DN

Page 5www.winsok.tw Dec.2014

N-Ch MOSFET

DFN3x3A-8_EP1

EE1

D1D D2

be

RECOMMENDED LAND PATTERN

UNIT: mm

0.80 0.031

0.002

0.10 0.25 0.004 0.010

SYMBOL

1.00

0.00

0.24 0.35

0.05

A

A1

b

A3

DFN3x3A-8_EP1_PMILLIMETERS

MIN. MAX. MIN. MAX.

INCHES

0.039

0.000

0.009 0.014

2.25 2.45 0.089 0.096D2

0.073

0.023

1.65E2

E3 0.56

1.85

0.58

0.065

0.022

0.65 BSC 0.026 BSC

2.90 3.10 0.114 0.122

3.10 3.30 0.122 0.130

2.90 3.10 0.114 0.122E1

D1

E

e

0.0310.475K 0.775 0.019

L 0.30 0.50 0.012 0.020

D 2.90 3.30 0.114 0.130

Attention

1, Any and all Winsok power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Winsok power representative nearest you before using any Winsok power products described or contained herein in such applications.

2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Winsok power products described or contained herein.

3, Specifications of any and all Winsok power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. Toverify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, Winsok power Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

5,In the event that any or all Winsok power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Winsok power Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the Winsok power product that you Intend to use.

9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without notice.