www.epc-co.com EPC - The Leader in eGaN® FETs ECTC 2014 1 1 The eGaN ® FET Journey Continues Wireless Energy Transfer – Technology Drivers Michael de Rooij Efficient Power Conversion Corporation
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www.epc-co.com EPC - The Leader in eGaN® FETs ECTC 2014 1 1
The eGaN® FET
Journey Continues
Wireless Energy Transfer – Technology Drivers
Michael de Rooij
Efficient Power Conversion Corporation
www.epc-co.com EPC - The Leader in eGaN® FETs ECTC 2014 2
Agenda
• Overview of Wireless Energy Transfer
• Wireless Energy Transfer Enabling Technologies
• Wireless Energy Topology Overview
• Wireless Energy Experimental Results
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Magnetic field Wireless
Transfer
Ideal
Transformer Lrp Lrs
Lmp Lms
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Highly Resonant Wireless
Transfer
Source Coil
Amplifier
Connection
Matching
Impedance
Network
Device Coil
Un-Regulated
DC output
Matching
Impedance
Network
• Coils tuned to resonate at 6.78 MHz
• Series and Shunt tuned can be used
• Coupling and load variation can shift resonance
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Why Wireless Energy
• Mobile device charging • Convenience • Extended battery life
• Medical Implants • Quality of life improvement • Life extender
• Hazardous environment systems • Explosive atmosphere • Corrosive locations • High Voltage
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Challenges to Wireless Energy
• High Efficiency – limited dissipation budget
• Low Profile – mobile market
• Robustness to dynamic operating conditions
(convenience factor)
• Foreign object response
• Regulatory compliance
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Compliance Requirements
• Industrial Scientific Medical(ISM) Band
• 6.78 MHz ± 15kHz (subject to local restrictions)
• 13.56 MHz ± 7kHz
• No Power limit specified, but!
• FCC / EN Standards
• Intentional radiator
• Must comply with FCC part 15 / EN55011
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Wireless Energy Standards
• Alliance for Wireless Power (A4WP / Rezence)
• Highly resonant (ISM band)
• loosely coupled coils
• Wireless Power Consortium (WPC - Qi)
• Low frequency (~ 100 - 200 kHz)
• Tightly coupled (Inductive)
• Power Matters Alliance (PMA)
• Joined with A4WP standard
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Wireless Energy Transfer
Enabling Technologies
• Antenna
• Design for high Efficiency
• eGaN FETs
• Enable high frequency Amplifiers
• Easy to use
• Support structure – gate drivers
• Topologies
• New topologies enabled by new FETs
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Class E Overview
VDD
Ideal Waveforms
VDS ID
time
3.56 x VDD
V / I
50%
Q1
+
Csh
Cs Le LRFck
Zload
• Switch voltage rating ≥ 3.56·Supply (VDD).
• COSS “absorbed” into matching network.
• Susceptible to load variation - high FET losses
• Coil Voltage ≈ 0.707·VDD [VRMS]
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Current Mode Class D
+
VDD
Cpt
Cs Q2 Q1
LCK1 LCK2
Lpt
Ideal Waveforms
VDS ID
time
π · VDD
V / I
50%
Zload
• Switch voltage rating = 3.14·Supply (VDD).
• COSS “absorbed” into matching network.
• High current in resonant inductor
• Coil Voltage = 2.22·VDD [VRMS]
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ZVS Voltage Mode Class D
+ VDD
Cs Q2
Q1 Zload
LZVS
CZVS
V / I
VDS ID
time
VDD
50%
Ideal Waveforms ZVS tank
• Switch voltage rating = Supply (VDD).
• COSS Voltage is transitioned by the ZVS tank
• ZVS tank circuit does not carry load current
• Coil Voltage = ½·VDD [VRMS]
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Device Comparison
020406080
100120140160180
EP
C8009
EP
C2007
MO
SF
ET
2
MO
SF
ET
3
ZVS-CD
FoMWPT [nC·mΩ]
0
200
400
600
800
1000
1200
1400
1600
EP
C2012
MO
SF
ET
1
SE-CE
SE-CE
0
10
20
30
40
50
60
70
EPC
20
14
MO
SFET
0
VM-CD
VM-CD
VG
S =
10
V
VG
S =
10
V
0
20
40
60
80
100
120
140
EPC
20
16
MO
SFET
4CM-CD
GDGDS(on)WPT QQRFOM
ZVS-CD CM-CD
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Peak Performance Comparison
50
55
60
65
70
75
80
85
0 5 10 15 20 25 30 35 40
Eff
icie
nc
y [
%]
Output Power [W]
50
55
60
65
70
75
80
85
0 5 10 15 20 25 30 35 40
Eff
icie
ncy [
%]
Output Power [W]
50
55
60
65
70
75
80
85
0 5 10 15 20 25 30 35 40
Eff
icie
ncy [
%]
Output Power [W]
50
55
60
65
70
75
80
85
0 5 10 15 20 25 30 35 40
Eff
icie
ncy [
%]
Output Power [W]
23.6 Ω DC Load
Tgate_driver > 95˚C
η EPC8009 ZVS-CD
η MOSFET 2 ZVS-CD
η MOSFET 3 ZVS-CD
η EPC2012 SE-CE
η MOSFET 1 SE-CE
η EPC2016 CM-CD
η EPC2014 VM-CD
η MOSFET 0 VM-CD
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Load Variation Performance
64
68
72
76
80
84
10 15 20 25 30 35 40 45 50
Eff
icie
ncy [
%]
DC Load Resistance [Ω]
64
68
72
76
80
84
10 15 20 25 30 35 40 45 50
Eff
icie
ncy [
%]
DC Load Resistance [Ω]
64
68
72
76
80
84
10 15 20 25 30 35 40 45 50
Eff
icie
ncy [
%]
DC Load Resistance [Ω]
η EPC8009 ZVS-CD
η MOSFET 2 ZVS-CD
η MOSFET 3 ZVS-CD
η EPC2012 SE-CE
η MOSFET 1 SE-CE
η EPC2016 CM-CD
Tgate_driver > 95˚C
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Summary
Wireless Energy Transfer Solutions Require:
• New enabling devices e.g. eGaN® FETs
• Operation at 6.78 MHz and 13.56 MHz
• Low profile and high efficiency solutions
• Easy to implement
• Drive new topologies e.g. ZVS Class D
• Growing support e.g. Gate drivers and products use them
• Robustness to operating conditions
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The end of the road
for silicon…..
is the beginning of
the eGaN FET
journey!
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Coil Simplification
Lsrc Ldev
Cdevs
RDCload
Cout
Ldevs
Cdevp Zload
Coil Set
Simplified representation of coil-set for easy comparison between topologies
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