Welcome to EE 130/230M Integrated Circuit Devices Instructors: Prof. Tsu-Jae King Liu and Dr. Nuo Xu (tking and nuoxu @eecs.berkeley.edu) TA:Khalid Ashraf.

Welcome to EE 130/230MIntegrated Circuit Devices

Instructors: Prof. Tsu-Jae King Liu and Dr. Nuo Xu (tking and nuoxu @eecs.berkeley.edu)

TA: Khalid Ashraf ([email protected])

Web page: http://www-inst.eecs.berkeley.edu/~ee130/bSpace site: EE 130/230M Spring 2013

Objectives: •Fundamental understanding of the working principles of semiconductor devices used in modern ICs. •An ability to design a transistor to meet performance requirements within realistic constraints.

Schedule• Lectures (247 Cory): TuTh 11AM-12:30PM • Discussion Section (beginning Wednesday 1/23):

– Section 101 (289 Cory): We 2-3PM

• Office Hours:– Prof. Liu (225 Cory): Mo 4-5PM– Nuo Xu (225 Cory): Tu 3-4PM– Khalid Ashraf (382 Cory): We 4-5PM

EE130/230M Spring 2013 Course Overview, Slide 2

Relation to Other Courses• Prerequisite:

– EECS40: Basic properties of semiconductors; basic understanding of transistor

operation – Familiarity with the Bohr atomic model

• Relation to other courses: – EE130 is a prerequisite for EE231 (Solid State Devices)– EE130 is also helpful (but not required) for IC analysis

and design courses such as EE140 and EE141, as well as for the microfabrication technology course EE143


Reading Material• Textbook:

Semiconductor Device Fundamentals by R. F. Pierret(Addison Wesley, 1996)

• Reference:– Modern Semiconductor Devices for Integrated

Circuits by C. Hu (Prentice Hall, 2009)


Grading– Homework (posted online)

• due Th (beginning of class) • late homeworks not accepted!

– Design project• assigned on 4/11, due on May 9•You may work in pairs

– 6 Quizzes •25 minutes each• closed book (1pg of notes allowed)• no make-up quizzes

– Final exam• Th 5/16 from 8AM to 11AM• closed book (6 pages of notes allowed)

10%

20%

30%

40%

Letter grades will be assigned based approximately on the following scales:

EE130

A+: 98-100A: 88-98A-: 85-88B+: 83-85B: 73-83B-: 70-73C+: 68-70C: 58-68C-: 55-58D: 45-55F: <45

EE230M

A+: 99-100A: 91-99A-: 90-91B+: 89-90B: 81-89B-: 80-81C+: 79-80C: 71-79C-: 70-71D: 60-70F: <60


Miscellany• Special accommodations:

– Students may request accommodation of religious creed, disabilities, and other special circumstances. Please meet with Prof. Liu to discuss your request, in advance.

• Academic (dis)honesty– Departmental policy will be strictly followed– Collaboration (not cheating!) is encouraged

• Classroom etiquette:– Arrive in class on time! – Bring your own copy of the lecture notes.– Turn off cell phones, etc.– Avoid distracting conversations


The Integrated Circuit (IC)• An IC consists of interconnected electronic components

in a single piece (“chip”) of semiconductor material.

The first planar IC(actual size: 0.06 in. diameter)

• In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in silicon using SiO2 as the insulator and Al for the metallic interconnects.

• In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in germanium.


300mm Si wafer

From a Few, to Billions of Components• By connecting a large number of components, each performing simple

operations, an IC that performs complex tasks can be built. • The degree of integration has increased at an exponential pace over

the past ~40 years.Moore’s Law: The # of devices on a chip doubles every ~2 yrs,

for the same chip price.


Intel Ivy Bridge Processor1.4B transistors, 160 mm2

Impact of Moore’s Law#

DEV

ICES

(MM

)

YEAR

Market Growth

Investment

Transistor Scaling

Higher Performance,Lower Cost

CMOS generation: 1 um • • 180 nm • • 22 nm

http://www.morganstanley.com/institutional/techresearch/pdfs/2SETUP_12142009_RI.pdf


The Nanometer Size Scale

Carbon nanotube

MOSFET

1 micrometer (1 m) = 10-4 cm; 1 nanometer (nm) = 10-7 cm


Course Overview

1. Semiconductor Fundamentals – 3 weeks

2. Metal-Semiconductor Contacts – 1 week

3. P-N Junction Diode – 3 weeks

4. MOS Capacitor – 2 weeks

5. MOSFET – 2 weeks

6. Bipolar Junction Transistor – 2 weeks

7. Modern CMOS Technology – 1 week

Metal-Oxide-Semiconductor (MOS)Field-Effect Transistor (FET)


Welcome to EE 130/230M Integrated Circuit Devices Instructors: Prof. Tsu-Jae King Liu and Dr. Nuo Xu (tking and nuoxu @eecs.berkeley.edu) TA:Khalid Ashraf.

Documents

2009ee130230m spring

cmee130230m spring

conversationsee130230m

5pmee130230m spring

modern semiconductor

simple ic

ic analysis

nm http