Weekly Group Meeting Report Renjie Chen Supervisor: Shadi A. Dayeh /14 1. Ni-InGaAs Solid-state Reaction Previous Design 2 Bonding Etch InP Etch Back InP InGaAs Ni SiO 2 Si Aperture Frame HfO2HfO2 HfO 2 Remaining Problems HfO 2 InGaAs Poor HRTEM Imaging due to HfO 2 layer Membrane broken during fabrication /143 New Design Si Directly fabricate Fins on top Deposit Ni Spin-coat PMMA Imbedded Copper TEM grids Bond to Carrier wafer With PMMA InP Lap & etch PMMA release /144 Copper TEM Aperture Microscope image before InP etchng /14 2. Neural Probes 5 1. Photolithography process in CINT In nano3 UCSD, the photolithography on sapphire wafer was performed with NR photoresist In CINT, theres no NR7 resist. The resist I used, AZ-5214 for image reverse, doesnt work well for sapphire (transparent wafer) This morning, Don helped me try the resist 5510 which gives a good resolution, however, it does not still stick to sapphire quite well. Ill take a look at the data sheet and some literatures to modify the 5510 process. / Nickel silicide bonding test on Sapphire wafer 300C 5min + 400C 10min300C 5min + 400C 20min300C 5min + 400C 30min /14 Thank you Q&A 7
