Supporting Information for Resonant level induced high thermoelectric response in indium-doped GeTe Lihua Wu, 1 Xin Li, 1, 2 Shanyu Wang, 3 Tiansong Zhang, 4 Jiong Yang, 1, * Wenqing Zhang, 1, * Lidong Chen, 4 and Jihui Yang 3, * 1. Materials Genome Institute, Shanghai University, Shanghai 200444, China. 2. Department of Physics, College of Sciences, Shanghai University, Shanghai 200444, China 3. Materials Science and Engineering Department, University of Washington, Seattle 98195, Washington, USA. 4. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China. * Corresponding authors. Emails: [email protected] (Jiong Yang); [email protected] (Wenqing Zhang); [email protected] (Jihui Yang).