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Voltage Controlled Ring Oscillator with Wide Tuning Range
and Fast Voltage Swing
*
Nicodimus Retdian, Shigetaka Takagi Nobuo FujiiTokyo Institute of Technology Tokyo Institute of Technology2-12-1 Oookayama, Meguro 2-12-1 Oookayama, Meguro
Tokyo, Japan Tokyo, Japan
nico, [email protected] [email protected]
ABSTRACT
Anewdesignofavoltagecontrolledringoscillatorisproposed.Theproposeddesignallowsanimplementationofalowfrequencyringoscillatorusingrelatively
smalldevicesandlessstages.Avoltagecontrolledringoscillatorwithtuningrangefrom40Hzto
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380MHzisachievedusingtheproposedmethod.Inaddition,theproposedcircuitenablestheoutputvoltagetoswingfaster
thantheconventionalone.
Keywords
ringoscillator,voltagecontrolledoscillator,inverter
1. INTRODUCTIONAvoltagecontrolledoscillator(VCO)isoneof
theimportantbasicbuildingblocksinanaloganddigitalcircuits[1],[2],[3].Forexample,aVCOis
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themainbuildingblockinphaselockedloop(PLL)andclockgeneratorcircuits.Therearesomanydifferentimplementations
ofVCOs.OneofthemistheringoscillatorbasedVCO,whichiscommonlyusedintheclockgeneration.
Theconventionalringoscillator
basedVCOusesvariablebiascurrentstocontrolitsoscillationfrequency.However,whenthebiascurrent
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isquitesmall,thevoltageswingoftheVCOwillbecomeslower(longerrise/falltime).Thatisnotdesirable
insomeapplications.Inaddition,increasingbiascurrentwillmakethevoltageheadroomsofthecurrentsourceMOStransistorsbecomenarrow.Thus,asaturation
*
TheauthorsarewiththeDept.ofCommunicationsandIntegratedSystems,Graduate
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willdescribetheconventionalvoltagecontrolledringoscillator.Itwillbethenfollowedbythebasicideaandimplementation
oftheproposedcircuitinsection3.Finally,simulationresultsandconclusionswillbegiveninsections4and5respectively.
2. CONVENTIONAL CIRCUITA
conventionalvoltagecontrolledringoscillatorcircuitisshowninFig.1whereNisanoddnumber
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andshowsthenumberofinverterstages.AssumethatthegatetosourceparasiticcapacitancesCGsoftheNMOS
andPMOStransistorsareequalasisshowninFig.2.Herethefrequencyoftheoscillationcanbefoundas
1
fosc=(1)
2Nt
wheretisthedelayofoneinverterstage.
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UsingFig.2,thedelayofeachinverterstagewillbegivenby
Z
Ictrl
Vosc=dt(2)
CG
VoscCG
t=(3)Ictrl
whereVoscistheoscillationamplitude.Substituting(3)
into
(1)willgiveIctrl
fosc=.(4)2NVoscCG
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HeretheoscillationfrequencyisdeterminedbythecurrentIctrl,thenumberofstagesN,theamplitudeVoscand
theparasiticcapacitanceCG.Foragivennumberofstages,theoscillationfrequencycanbecontrolledbyvaryingcontrolcurrentoramplitudeonlysinceCG
isafixedparameter.Controlschemebyvaryingthecurrentiscommonlyused.
Equation
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(4)givesanillustrationthattheoscillationfrequencycanbetheoreticallytunedforawiderangebychangingthe
valueofcontrolcurrent.However,itwillnotworkproperlyforaverysmallcurrentsinceitisdifficulttokeepmatchingbetweenthevalues
oftheupperandlowercontrolcurrentswhentheyaretoosmall.Inaddition,thesmall
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biascurrentwillmakethevoltageswingslow.
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VDD
Ictrl
Ictrl
Ictrl
Ictrl Ictrl IctrlVSS
N
Figure
1:Conventionalvoltagecontrolledringoscillator.
VDD
Ictrl IctrlIctrl IctrlVSSCGCGFigure2:Delayapproximation.
3. PROPOSED CIRCUIT3.1 Basic CircuitTheproposed
circuitschemeisshowninFig.3.HereavariableresistorRVisaddedattheinput
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terminalofeachinverter.TheinverteritselfismadefromPMOSandNMOStransistorsasisshowninFig.4.
ThedelayofeachstagetpcanbecalculatedfromFig.5.SincetheMOStransistorsineachinvertercanbeassumedasswitches,itcan
bereplacedbyaresistance1/GMasisshowninFig.5.IfthetransconductancesGMs
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andparasiticcapacitancesCGsofNMOSandPMOStransistorsareequal,thedelayofeachinverterstagetpthen
willbeapproximately
CG(1+GMRV)
tp=.(5)
GM
ForaverylargeRVsuch
thatGMRV.1,thedelaywillbedeterminedbythetimeconstantofRV
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CGregardlessofthevalueofGM.AssumingRV=0willgive
CG
tp
=,(6)
GM
whichisadelayforasimpleinverterstage.Finally,the
N
Figure
3:Proposedvoltagecontrolledringoscillator.
oscillationfrequencycanbefoundas
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GM
fosc=.(7)
2NCG(1+GMRV)
Equation(7)showsthatthe
oscillationfrequencydependsonthevaluesoftransconductanceGM,resistanceRVandcapacitanceCG.However,GMandCGaredeviceparametersandassumedto
beconstant.Asaconclusion,theoscillationfrequencycanbecontrolledbychangingthevalueof
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RV.Theoretically,choosingabigvalueforRVwillenabletheimplementationofaringoscillatorwitha
lowoscillationfrequencyusingsmallsizedevicesandlessstages.
IN
OUT
IN OUTFigure4:Invertercircuit.
CG
1/GM RVRV
VOUT
CG
VDD
Figure5:Delayapproximation.
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3.2 Circuit ImplementationTheproposedmethodisimplementedinthecircuitshowninFig.6.Herethevariableresistanceisimplemented
usingPMOSandNMOStransistors.Bothtypesarerequiredtoenablethefullswingbetweenpowersupplies.TheoverallcircuitisshowninFig.7.Here
theresistancesoftheMOStransistorsarecontrolledbytheirgatevoltage.ChoosingaproperMOS
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transistorsizeswillguaranteethematchingbetweentransistors.
4. SIMULATION RESULTSThesimulationisperformedusinglevel28,0.6m
CMOSprocessparameters.Circuitsusedinthesimulationarethree-stagevoltagecontrolledringoscillatorsshowninFigs.8and9.TheW/LratiosoftheMOS
transistorsareshowninTable1.ThepowersupplyVDDforbothcircuitsis3V.
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OUTIN OUTINVDD
VP
Ictrl
VN
Ictrl
Figure6:Circuitimplementationoftheinverter
circuit.
M1M4M1M4M1M4M2M3M2M3M2M3M1M4OUTVPVNFigure7:Circuitimplementationof
theproposedvoltagecontrolledringoscillator.
4.1 Transient CharacteristicsBothtransientsimulationresultsoftheconventional
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andtheproposedcircuitsareshowninFig.10.Theoscillationfrequencyforbothofthemaresetto370MHz.
ThecontrolcurrentIctrloftheconventionalcircuitis134AwhilethecontrolvoltageVctrloftheproposedcircuitis3V.
Next,Fig.11
showsthetransientsimulationresultoftheproposedcircuitwhenthecontrolvoltageis1V.The
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oscillationfrequencyis6MHz.Thecontrolcurrentoftheconventionalcircuitis1.415Aforthesameoscillationfrequency.Here
theproposedcircuithasafastervoltageswingthantheconventionaloneforbothhighandlowoscillationfrequency.Incaseoffosc=6MHz,
therise/falltime(10%~90%ofvoltageswing)fortheconventionalandtheproposedcircuits
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ofeachinverter.Asaresult,theproposedcircuithasafastervoltageswingthantheconventionalone.
4.2 F-V CharacteristicSimulationresultofthef-vcharacteristicoftheproposedvoltagecontrolledringoscillatorisshowninFig.13.Theoscillationfrequencyforcontrolvoltage
of0.4Vand3Vare40Hzand380MHzrespectively.Hereafrequencytuningrangefromtens
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ofhertztohundredsofmegahertzisobtained.Inadditionimplementationoflowfrequencyoscillatorusingsmallsizedevices
isalsopossible.
Figure8:Conventionalthreestagesvoltagecontrolledringoscillator.
Table1:NMOStransistorsW/Lratios
W/L[m/m]
W/L[m/m]M13/0.6Ma9/0.6M29/0.6Mb4.5/1.2M34.5/1.2Msp3/0.6M41.5/1.2Msn
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atuningrangefrom40Hzto380MHzforcontrolvoltagebetween0.4Vto3V.Furthermore,themaximumoscillationfrequency
oftheproposedcircuitdependsonthedevicesizes.Furthermore,theproposedcircuitisapplicableforalowersupplyvoltagebecauseofitssimplestructure.
Figure13showsthattheproposedcircuithasalinearindBcharactertisticfor
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controlvoltageslessthan1V.ThisisbecausetheMOSTresistorsareintheweakinversionregion.Forcontrol
voltagesbiggerthen1V,theMOSTresistorsareinthelinearregionandtheoscillationfrequencyisincreasedby20MHzfor0.1Vincrementofcontrol
voltage.Theexperimentalchipisstillunderdevelopment.
6. REFERENCES[1]A.HajimiriandT.H.Lee.The
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DesignofLowNoiseOscillators.KluwerAcademicPublishers,1999.[2]A.RezayeeandK.Martin.Athree-stagecoupledringoscillatorwith
quadratureoutputs.InProceedingsofInt.Symp.onCircuitsandSystems.IEEE,2001.[3]D.A.JohnsandK.Martin.AnalogIntegratedCircuitDesign.JohnWileyandSons,New
York,1997.
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VDD
Vctrl
OUTMspMsnMaMbMsp MspMsn MsnMa MaMb MbVctrlFigure9:Proposedthree
stagesvoltagecontrolledringoscillator.
1
IVDDVOUT0
3Voltages [V]
100
2
Currents [uA]
conventionalproposed
344n 345n 346n 347n 348n 349n 350n 351n 352n 353n 354n
3
0
Time [s]
2
Figure12:Currentdissipation(fosc=6MHz).
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1
Voltages [V]
0
Time [s]Figure10:Transientcharacteristic(fosc=370MHz).
108
0.51 23
Frequency [Hz]106
104
conventionalproposed
3
Voltages [V]
2102
1
Vctrl [V]
Figure13:F-Vcharacteristic
simulationresultsof
0
theproposedcircuit.
41.3u 41.4u 41.5u 41.6u 41.7u
Time [s]
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Figure11:Transientcharacteristic(fosc=6MHz).
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