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Voltage Controlled Ring Oscillator with Wide Tuning Range

Apr 07, 2018

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    Voltage Controlled Ring Oscillator with Wide Tuning Range

    and Fast Voltage Swing

    *

    Nicodimus Retdian, Shigetaka Takagi Nobuo FujiiTokyo Institute of Technology Tokyo Institute of Technology2-12-1 Oookayama, Meguro 2-12-1 Oookayama, Meguro

    Tokyo, Japan Tokyo, Japan

    nico, [email protected] [email protected]

    ABSTRACT

    Anewdesignofavoltagecontrolledringoscillatorisproposed.Theproposeddesignallowsanimplementationofalowfrequencyringoscillatorusingrelatively

    smalldevicesandlessstages.Avoltagecontrolledringoscillatorwithtuningrangefrom40Hzto

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    380MHzisachievedusingtheproposedmethod.Inaddition,theproposedcircuitenablestheoutputvoltagetoswingfaster

    thantheconventionalone.

    Keywords

    ringoscillator,voltagecontrolledoscillator,inverter

    1. INTRODUCTIONAvoltagecontrolledoscillator(VCO)isoneof

    theimportantbasicbuildingblocksinanaloganddigitalcircuits[1],[2],[3].Forexample,aVCOis

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    themainbuildingblockinphaselockedloop(PLL)andclockgeneratorcircuits.Therearesomanydifferentimplementations

    ofVCOs.OneofthemistheringoscillatorbasedVCO,whichiscommonlyusedintheclockgeneration.

    Theconventionalringoscillator

    basedVCOusesvariablebiascurrentstocontrolitsoscillationfrequency.However,whenthebiascurrent

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    isquitesmall,thevoltageswingoftheVCOwillbecomeslower(longerrise/falltime).Thatisnotdesirable

    insomeapplications.Inaddition,increasingbiascurrentwillmakethevoltageheadroomsofthecurrentsourceMOStransistorsbecomenarrow.Thus,asaturation

    *

    TheauthorsarewiththeDept.ofCommunicationsandIntegratedSystems,Graduate

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    willdescribetheconventionalvoltagecontrolledringoscillator.Itwillbethenfollowedbythebasicideaandimplementation

    oftheproposedcircuitinsection3.Finally,simulationresultsandconclusionswillbegiveninsections4and5respectively.

    2. CONVENTIONAL CIRCUITA

    conventionalvoltagecontrolledringoscillatorcircuitisshowninFig.1whereNisanoddnumber

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    andshowsthenumberofinverterstages.AssumethatthegatetosourceparasiticcapacitancesCGsoftheNMOS

    andPMOStransistorsareequalasisshowninFig.2.Herethefrequencyoftheoscillationcanbefoundas

    1

    fosc=(1)

    2Nt

    wheretisthedelayofoneinverterstage.

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    UsingFig.2,thedelayofeachinverterstagewillbegivenby

    Z

    Ictrl

    Vosc=dt(2)

    CG

    VoscCG

    t=(3)Ictrl

    whereVoscistheoscillationamplitude.Substituting(3)

    into

    (1)willgiveIctrl

    fosc=.(4)2NVoscCG

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    HeretheoscillationfrequencyisdeterminedbythecurrentIctrl,thenumberofstagesN,theamplitudeVoscand

    theparasiticcapacitanceCG.Foragivennumberofstages,theoscillationfrequencycanbecontrolledbyvaryingcontrolcurrentoramplitudeonlysinceCG

    isafixedparameter.Controlschemebyvaryingthecurrentiscommonlyused.

    Equation

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    (4)givesanillustrationthattheoscillationfrequencycanbetheoreticallytunedforawiderangebychangingthe

    valueofcontrolcurrent.However,itwillnotworkproperlyforaverysmallcurrentsinceitisdifficulttokeepmatchingbetweenthevalues

    oftheupperandlowercontrolcurrentswhentheyaretoosmall.Inaddition,thesmall

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    biascurrentwillmakethevoltageswingslow.

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    VDD

    Ictrl

    Ictrl

    Ictrl

    Ictrl Ictrl IctrlVSS

    N

    Figure

    1:Conventionalvoltagecontrolledringoscillator.

    VDD

    Ictrl IctrlIctrl IctrlVSSCGCGFigure2:Delayapproximation.

    3. PROPOSED CIRCUIT3.1 Basic CircuitTheproposed

    circuitschemeisshowninFig.3.HereavariableresistorRVisaddedattheinput

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    terminalofeachinverter.TheinverteritselfismadefromPMOSandNMOStransistorsasisshowninFig.4.

    ThedelayofeachstagetpcanbecalculatedfromFig.5.SincetheMOStransistorsineachinvertercanbeassumedasswitches,itcan

    bereplacedbyaresistance1/GMasisshowninFig.5.IfthetransconductancesGMs

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    andparasiticcapacitancesCGsofNMOSandPMOStransistorsareequal,thedelayofeachinverterstagetpthen

    willbeapproximately

    CG(1+GMRV)

    tp=.(5)

    GM

    ForaverylargeRVsuch

    thatGMRV.1,thedelaywillbedeterminedbythetimeconstantofRV

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    CGregardlessofthevalueofGM.AssumingRV=0willgive

    CG

    tp

    =,(6)

    GM

    whichisadelayforasimpleinverterstage.Finally,the

    N

    Figure

    3:Proposedvoltagecontrolledringoscillator.

    oscillationfrequencycanbefoundas

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    GM

    fosc=.(7)

    2NCG(1+GMRV)

    Equation(7)showsthatthe

    oscillationfrequencydependsonthevaluesoftransconductanceGM,resistanceRVandcapacitanceCG.However,GMandCGaredeviceparametersandassumedto

    beconstant.Asaconclusion,theoscillationfrequencycanbecontrolledbychangingthevalueof

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    RV.Theoretically,choosingabigvalueforRVwillenabletheimplementationofaringoscillatorwitha

    lowoscillationfrequencyusingsmallsizedevicesandlessstages.

    IN

    OUT

    IN OUTFigure4:Invertercircuit.

    CG

    1/GM RVRV

    VOUT

    CG

    VDD

    Figure5:Delayapproximation.

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    3.2 Circuit ImplementationTheproposedmethodisimplementedinthecircuitshowninFig.6.Herethevariableresistanceisimplemented

    usingPMOSandNMOStransistors.Bothtypesarerequiredtoenablethefullswingbetweenpowersupplies.TheoverallcircuitisshowninFig.7.Here

    theresistancesoftheMOStransistorsarecontrolledbytheirgatevoltage.ChoosingaproperMOS

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    transistorsizeswillguaranteethematchingbetweentransistors.

    4. SIMULATION RESULTSThesimulationisperformedusinglevel28,0.6m

    CMOSprocessparameters.Circuitsusedinthesimulationarethree-stagevoltagecontrolledringoscillatorsshowninFigs.8and9.TheW/LratiosoftheMOS

    transistorsareshowninTable1.ThepowersupplyVDDforbothcircuitsis3V.

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    OUTIN OUTINVDD

    VP

    Ictrl

    VN

    Ictrl

    Figure6:Circuitimplementationoftheinverter

    circuit.

    M1M4M1M4M1M4M2M3M2M3M2M3M1M4OUTVPVNFigure7:Circuitimplementationof

    theproposedvoltagecontrolledringoscillator.

    4.1 Transient CharacteristicsBothtransientsimulationresultsoftheconventional

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    andtheproposedcircuitsareshowninFig.10.Theoscillationfrequencyforbothofthemaresetto370MHz.

    ThecontrolcurrentIctrloftheconventionalcircuitis134AwhilethecontrolvoltageVctrloftheproposedcircuitis3V.

    Next,Fig.11

    showsthetransientsimulationresultoftheproposedcircuitwhenthecontrolvoltageis1V.The

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    oscillationfrequencyis6MHz.Thecontrolcurrentoftheconventionalcircuitis1.415Aforthesameoscillationfrequency.Here

    theproposedcircuithasafastervoltageswingthantheconventionaloneforbothhighandlowoscillationfrequency.Incaseoffosc=6MHz,

    therise/falltime(10%~90%ofvoltageswing)fortheconventionalandtheproposedcircuits

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    ofeachinverter.Asaresult,theproposedcircuithasafastervoltageswingthantheconventionalone.

    4.2 F-V CharacteristicSimulationresultofthef-vcharacteristicoftheproposedvoltagecontrolledringoscillatorisshowninFig.13.Theoscillationfrequencyforcontrolvoltage

    of0.4Vand3Vare40Hzand380MHzrespectively.Hereafrequencytuningrangefromtens

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    ofhertztohundredsofmegahertzisobtained.Inadditionimplementationoflowfrequencyoscillatorusingsmallsizedevices

    isalsopossible.

    Figure8:Conventionalthreestagesvoltagecontrolledringoscillator.

    Table1:NMOStransistorsW/Lratios

    W/L[m/m]

    W/L[m/m]M13/0.6Ma9/0.6M29/0.6Mb4.5/1.2M34.5/1.2Msp3/0.6M41.5/1.2Msn

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    atuningrangefrom40Hzto380MHzforcontrolvoltagebetween0.4Vto3V.Furthermore,themaximumoscillationfrequency

    oftheproposedcircuitdependsonthedevicesizes.Furthermore,theproposedcircuitisapplicableforalowersupplyvoltagebecauseofitssimplestructure.

    Figure13showsthattheproposedcircuithasalinearindBcharactertisticfor

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    controlvoltageslessthan1V.ThisisbecausetheMOSTresistorsareintheweakinversionregion.Forcontrol

    voltagesbiggerthen1V,theMOSTresistorsareinthelinearregionandtheoscillationfrequencyisincreasedby20MHzfor0.1Vincrementofcontrol

    voltage.Theexperimentalchipisstillunderdevelopment.

    6. REFERENCES[1]A.HajimiriandT.H.Lee.The

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    DesignofLowNoiseOscillators.KluwerAcademicPublishers,1999.[2]A.RezayeeandK.Martin.Athree-stagecoupledringoscillatorwith

    quadratureoutputs.InProceedingsofInt.Symp.onCircuitsandSystems.IEEE,2001.[3]D.A.JohnsandK.Martin.AnalogIntegratedCircuitDesign.JohnWileyandSons,New

    York,1997.

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    VDD

    Vctrl

    OUTMspMsnMaMbMsp MspMsn MsnMa MaMb MbVctrlFigure9:Proposedthree

    stagesvoltagecontrolledringoscillator.

    1

    IVDDVOUT0

    3Voltages [V]

    100

    2

    Currents [uA]

    conventionalproposed

    344n 345n 346n 347n 348n 349n 350n 351n 352n 353n 354n

    3

    0

    Time [s]

    2

    Figure12:Currentdissipation(fosc=6MHz).

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    1

    Voltages [V]

    0

    Time [s]Figure10:Transientcharacteristic(fosc=370MHz).

    108

    0.51 23

    Frequency [Hz]106

    104

    conventionalproposed

    3

    Voltages [V]

    2102

    1

    Vctrl [V]

    Figure13:F-Vcharacteristic

    simulationresultsof

    0

    theproposedcircuit.

    41.3u 41.4u 41.5u 41.6u 41.7u

    Time [s]

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    Figure11:Transientcharacteristic(fosc=6MHz).

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