Document Number: 91323 www.vishay.com S10-1139-Rev. C, 17-May-10 1 Power MOSFET IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR110, SiHLR110) • Straight Lead (IRLU110, SiHLU110) • Available in Tape and Reel • Logic-Level Gate Drive •R DS(on) Specified at V GS = 4 V and 5 V • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 °C, L = 8.1 mH, R g = 25 Ω, I AS = 4.3 A (see fig. 12). c. I SD ≤ 5.6 A, dI/dt ≤ 140 A/μs, V DD ≤ V DS , T J ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nC) 6.1 Q gs (nC) 2.0 Q gd (nC) 3.3 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHLR110-GE3 SiHLR110TR-GE3 SiHLR110TRL-GE3 SiHLU110-GE3 Lead (Pb)-free IRLR110PbF IRLR110TRPbF a IRLR110TRLPbF IRLU110PbF SiHLR110-E3 SiHLR110T-E3 a SiHLR110TL-E3 SiHLU110-E3 SnPb IRLR110 IRLR110TR a IRLR110TRL a IRLU110 SiHLR110 SiHLR110T a SiHLR110TL a SiHLU110 ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 10 Continuous Drain Current V GS at 5.0 V T C = 25 °C I D 4.3 A T C = 100 °C 2.7 Pulsed Drain Current a I DM 17 Linear Derating Factor 0.20 W/°C Linear Derating Factor (PCB Mount) e 0.020 Single Pulse Avalanche Energy b E AS 100 mJ Repetitive Avalanche Current a I AR 4.3 A Repetitive Avalanche Energy a E AR 2.5 mJ Maximum Power Dissipation T C = 25 °C P D 25 W Maximum Power Dissipation (PCB Mount) e T A = 25 °C 2.5 Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260 d * Pb containing terminations are not RoHS compliant, exemptions may apply
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Vishay · PDF fileDocument Number: 91323 S10-1139-Rev. C, 17-May-10 3 IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C
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FEATURES• Halogen-free According to IEC 61249-2-21
Definition• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Surface Mount (IRLR110, SiHLR110)• Straight Lead (IRLU110, SiHLU110)• Available in Tape and Reel• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• Compliant to RoHS Directive 2002/95/EC
DESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straightlead version (IRLU, SiHLU series) is for through-holemounting applications. Power dissipation levels up to 1.5 Ware possible in typical surface mount applications.
Notea. See device orientation.
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12).c. ISD ≤ 5.6 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.d. 1.6 mm from case.e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARYVDS (V) 100
RDS(on) (Ω) VGS = 5.0 V 0.54
Qg (Max.) (nC) 6.1
Qgs (nC) 2.0
Qgd (nC) 3.3
Configuration Single
N-Channel MOSFET
G
D
S
DPAK(TO-252)
IPAK(TO-251)
G D SS
D
G
D
ORDERING INFORMATIONPackage DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)Lead (Pb)-free and Halogen-free SiHLR110-GE3 SiHLR110TR-GE3 SiHLR110TRL-GE3 SiHLU110-GE3
Lead (Pb)-freeIRLR110PbF IRLR110TRPbFa IRLR110TRLPbF IRLU110PbFSiHLR110-E3 SiHLR110T-E3a SiHLR110TL-E3 SiHLU110-E3
W/°C Linear Derating Factor (PCB Mount)e 0.020Single Pulse Avalanche Energyb EAS 100 mJ Repetitive Avalanche Currenta IAR 4.3 A Repetitive Avalanche Energya EAR 2.5 mJ Maximum Power Dissipation TC = 25 °C
PD25
W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C Soldering Recommendations (Peak Temperature) for 10 s 260d
* Pb containing terminations are not RoHS compliant, exemptions may apply
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?91323.
P.W.Period
dI/dt
Diode recoverydV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-appliedvoltage
Reverserecoverycurrent
Body diode forwardcurrent
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.Period
+
-
+
+
+-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.• ISD controlled by duty factor “D”• D.U.T. - device under test
Notes1. Dimensioning and tolerancing per ASME Y14.5M-1994.2. Dimension are shown in inches and millimeters.3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.5. Lead dimension uncontrolled in L3.6. Dimension b1, b3 and c1 apply to base metal only.7. Outline conforms to JEDEC outline TO-251AA.
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