PRODUCT BRIEF FROM THE RECOGNIZED INDUSTRY LEADER FOR DISCRETE SEMICONDUCTOR PRODUCTS ABOVE 2500V AUGUST 2009 OVERVIEW DISCRETE HIGH VOLTAGE IGBT MARKET Graphic on the leſt illustrates IXYS’ IGBT device porolio dominance in the high voltage discrete market. Closest major competor offers only up to 1600V of collector emier breakdown voltage. DISCRETE HIGH VOLTAGE MOSFET MARKET Graphic on the right illustrates IXYS’ MOSFET device porolio dominance in the high voltage discrete market. Closest major competor offers only up to 1200V of drain to source breakdown voltage. 0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 3500 4000 As the new “Green-World Economy” unfolds, Design Engineers are quickly transioning to focus ever more effort upon maximizing the efficiency of their designs, which is resulng in a world-wide explosion of demand for Very-High-Voltage (VHV) Power Semiconductor Devices. This Product Brief introduces three proven families of VHV Discrete Devices like no others currently available in the Power Semiconductor Marketplace. These IGBT, MOSFET and BiMOSFET TM Families provide cost-effecve soluons for applicaons requiring up to 4000V of power switching capability, with current rangs from 0.3 Amperes to 180 Amperes! Through the ulizaon of these components, Design Engineers are provided with the ability to switch more power within a smaller footprint than ever before possible; eliminang the need to use mulple, lower-voltage, series-connected devices in most higher-voltage designs. The result is a much simpler system design, with improved reliability, a lower component count, and a lower system cost – crical elements in the bulk of higher-voltage applicaons today. The world is transioning, and efficiency is becoming a more crical key for extending the lifespan and compeveness of designs in the marketplace. IXYS’ unique porolio of Very-High- Voltage Discrete Devices is standing by, ready to assist Design Engineers in reaching beyond the circuits of yesteryear, and in delivering more capability more elegantly than ever before.
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Very High Voltage Discrete Portfolio PRODUCTBRIEF - IXYS Power
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IXYSPOWEREfficiency Through Technology
Very High Voltage Discrete Portfolio
P R O D U C T B R I E F
FROm ThE RECOgnIzED InDUsTRy lEaDER FOR DIsCRETE sEmICOnDUCTOR PRODUCTs aBOvE 2500v
aUgUsT 2009
OvERvIEW
DIsCRETE hIgh vOlTagE
IgBT maRkET
Graphic on the left illustrates IXYS’ IGBT device
portfolio dominance in the high voltage discrete
market. Closest major competitor offers only up to
1600V of collector emitter breakdown voltage.
DIsCRETE hIgh vOlTagE
mOsFET maRkET
Graphic on the right illustrates IXYS’
MOSFET device portfolio dominance
in the high voltage discrete market.
Closest major competitor offers
only up to 1200V of drain to source
breakdown voltage.
0
500
1000
1500
2000
2500
3000
3500
4000
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500
1000
1500
2000
2500
3000
3500
4000
www.ixys.com
As the new “Green-World Economy” unfolds, Design Engineers
are quickly transitioning to focus ever more effort upon
maximizing the efficiency of their designs, which is resulting in
a world-wide explosion of demand for Very-High-Voltage (VHV)
Power Semiconductor Devices.
This Product Brief introduces three proven families of VHV
Discrete Devices like no others currently available in the
Power Semiconductor Marketplace. These IGBT, MOSFET
and BiMOSFETTM Families provide cost-effective solutions for
applications requiring up to 4000V of power switching capability,
with current ratings from 0.3 Amperes to 180 Amperes!
Through the utilization of these components, Design Engineers
are provided with the ability to switch more power within a
smaller footprint than ever before possible; eliminating the
need to use multiple, lower-voltage, series-connected devices
in most higher-voltage designs. The result is a much simpler
system design, with improved reliability, a lower component
count, and a lower system cost – critical elements in the bulk of
higher-voltage applications today.
The world is transitioning, and efficiency is becoming a more
critical key for extending the lifespan and competitiveness of
designs in the marketplace. IXYS’ unique portfolio of Very-High-
Voltage Discrete Devices is standing by, ready to assist Design
Engineers in reaching beyond the circuits of yesteryear, and in
delivering more capability more elegantly than ever before.
ISOPLUS i4-Pak™
TO-268 (D3-Pak)
TO-264
PLUS 247
ISOPLUS 264
IXYS’ offers a unique portfolio of discrete 2500V, 3000V, and 4000V VHV IGBTs with collector current ratings spanning
from 5.5 Amperes to 180 Amperes (Tc=25˚C). The voltage and current ratings of these devices, coupled with simplified
MOS gate-control, allow the system designer to greatly reduce the complexity of many high voltage switching
designs.
These IGBTs enable the use of a single device in systems whose circuits previously used multiple, cascaded, lower-
voltage switches. Such device consolidation reduces the number of power devices, while also improving cost and
efficiency by eliminating complex drive and voltage balancing components. In systems whose circuits previously
utilized high voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation
of signal modulation schemes, thus improving efficiency, simplifying wave shaping, and enabling load disconnection
for improved system safety. Traditional high voltage EMRs and discharge relays can also be replaced, reducing system
complexity and improving overall reliability.
Applications which stand to benefit from the combination of power and simplicity offered by these convenient IGBTs
includes high-voltage pulse circuits, capacitor discharge circuits, high-voltage power supplies, and laser and x-ray
generation systems. IXYS VHV IGBTs are also available in our proprietary ISOPLUSTM packaging, offering high isolation
capability (up to 4000V) and superior thermal performance. IXYS will also be offering a full range of high speed 2.5kV
IGBTs with hard-switching capabilities of up to 20khz in near future.
FEaTUREs
High blocking voltages �High peak current capability �High power density �Low saturation voltage �International standard and proprietary �IsOPlUsTm packages
aPPlICaTIOns
Pulser Circuits �Capacitor Discharge Circuits �High Voltage Power Supplies �High Voltage Test Equipment �Laser & X-ray Generators �
* For information regarding IXYS ISOPLUS packages, visit http://www.ixys.com/IXAN0022.pdf
Our line of proven ISOPLUSTM packaging provides for improved
creepage distance to simplify compliance with regulatory high-
voltage spacing requirements. The copper-bonded, isolated
ceramic substrate enhances overall device reliability by greatly
improving thermal and power cycling, and the isolated backside
simplifies mounting while yielding superior thermal impedance.
The molding epoxies utilized meet the UL 94V-0 flammability
classification.
Backed up with multiple U.S. Patents and UL recognition, the
ISOPLUSTM packaging advantage is available only from IXYS.
FEaTUREs
High blocking voltages �High power density �High peak current capability �Low saturation voltage �International standard and �proprietary ISOPLUSTm packages
aPPlICaTIOns
High Voltage Power Supplies �Capacitor Discharge Circuits �Pulser Circuits �Discharge Relays �High Voltage Test Equipment �Laser & X-ray Generators �
IsOPlUsTm Packages with Internal Alumina DCB Isolation*
www.ixys.comAugust 2009 PBVHVIGBTBIMOSFET 1.7
ISOPLUS i4-PakTM
TO-264
TO-247
TO-268
PLUS 247
IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking voltage capabilities of
up to 3kV with corresponding collector current ratings of up to 130 amperes. These new devices present higher
current capability than that found in traditional discrete 2.5kV/3kV MOSFETs and IGBTs, featuring a “free” intrinsic
body diode similar to that found in a MOSFET. HV BiMOSFETsTM are proving most useful in high-voltage applications
such as AC switches, circuit breakers, radar pulse modulators, power supplies, capacitor discharge circuits, and
laser and X-ray generation systems.
These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient
of both of its saturation voltage, and the forward voltage drop of its intrinsic diode an integrated body diode
from collector to emitter. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an
alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from
inflicting damage to the device.
IXYS High Voltage BiMOSFETsTM represent excellent candidates for any high-voltage, high-current applications
where traditional MOSFETs are typically utilized in series-parallel strings to overcome their voltage, current and on-
state limitations. Replacement of such series-parallel strings, (and associated gate drive circuitry), results in a much
simpler system design, with improved reliability, a lower component count, and a lower system cost.
FEaTUREsHigh blocking voltage �High power density �High current handling capability �Low conduction losses �MOS gate turn on for drive simplicity �International standard and proprietary �IsOPlUsTm packages
aPPlICaTIOnsRadar transmitter power supplies �Radar pulse modulators �Capacitor discharge circuits �High voltage power supplies �AC switches �HV circuit breakers �Pulser circuits �High voltage test equipment �Laser & X-ray generators �