Utilizing Science & Technology and Innovation for Development …josta.gov.jo/sites/default/files/3. Alaa-Bothina-Omar... · 2015-09-20 · Utilizing Science & Technology and Innovation

Utilizing Science & Technology and Innovation

for Development

Marriott Hotel- Amman, August 13th, 2015

Enhanced Mid-Wave-Infrared Photo Detectors Coupled

With Optical Nano-Antennas

Project Team

• Dr. Alaa Al-Halhouli/GJU/Jordan

• Prof. Dr. Bothina Hamad/University of Arkansas/ USA

• Prof. Dr. Omar Manasreh/University of Arkansas/USA

Brief Description

• Growth of metallic nanoparticles and semiconductor

nanocrystals.

• Coupling of metallic nanoparticles and optical

nanoantennas to devices.

• Uncooled Photodetectors based on nanomaterials.

• Performance of photodetectors and photovoltaic

devices under the influence of plasmonic effect and

anti-reflection coating.

Justifications

• Search for far-infrared (long wavelength) photodetectors that

can operate at room temperature with high detectivity

(D* >1012 cm.Hz1/2/W ).

• Coupling of dissimilar materials to produce a new materials

with enhanced properties.

• Coupling optical nanoantennas and metasurfaces to generate

plasmonic effects, which in turn enhance the performance of the

devices.

• Apply the new approaches to enhance the performance of solar

cells

Objectives

• Establish a collaborative research between GJU and

University of Arkansas.

• Investigate the effect of optical nanoantennas on the

performance of uncooled infrared photodetectors.

• Apply the new approaches to solar cells including

plasmonic effect and antireflection coatings.

Scope of work/Duration

Estimated Budget

Scope of work: The scope is grow semiconductor

nanocrystals and metallic nanoparticles to fabricate

photodetectors and photovoltaic devices then couple

these devices to optical nanoantennas and anti-

relfection coating for the purpose of enhancing the

performance of the devices.

Duration: 24 months

Estimated Budget : JD 180,000

Methodology of Implementation

● Growth of semiconductor nanocrystals, such as PbSe, CdSe,

InP, core/shell nanocrystls, and metallic nanoparticles.

● Fabricate infrared photodetectors and photovoltaic devices

● Deposit optical nanoantennas and metasurfaces on top of the

devices to investigate plasmonic effect on the performance

of the devices.

● Couple anti-reflection coating layers, grown by sol-gel

method, to the devices to minimize the photons reflection

from the surface of the devices.

● Investigate the above approaches to implement them for

mass production of solar cells and panels.

Expected output

● Creation of easy to follow approaches to enhance the

performance of infrared photodetectors and photovoltaic

devices by utilizing sol gel, and colloidal growth methods.

● Implementation of the new approaches for industrial mass

production of solar cells.

● Production of uncooled infrared photodetectors with

enhance performance.

● Exchange of students and expertise between scientists and

engineers in both Jordan and United State.

● Promote basic research activities in Jordan

Impact

• Technology transfer and the know how to universities

in Jordan.

• Student training and exchanging in both Jordan and

USA

• May have an impact on the solar energy industry in

Jordan and enhance performance on the solar cells.

• May have impact on local and national economy.

Sustainability

• It is expected that this project will lead to the writing of

other proposals in the field of detectors and solar energy

such that the research in nanotechnology will be sustained

for many years to come.

• This project will generate research interests in related fields,

such as biosensors and MEMs sensors.

• A small business company may be established to transfer the

technology from basic research to application and

development that could impact the local economy.

Action Plan

Material growth: The following materials growth will be used:

• MBE growth for wafers including quantum structures and dots.

• Colloidal growth of semiconductor nanocrystals and metallic

nanoparticles.

• Electron beam lithography to design optical nanoantennas and

metasurfaces (resonators)

• Sol-gel methods to grow nanorods and nanotubes for

antireflection coating layers.

Device Fabrication: Photodetectors, photovoltaic

devices (solar cells), and sensors will be fabricated using

the standard chemical wet etching photolithograph as

well as dry etching ICP-RIE methods.

Dissolve

in Water

Zinc Nitrate Hexa-

hydrateHexamine

Dissolve

in Water

Add

Diaminopropane

ZnO Nanoneedle

growth solution

ZnO Nanoneedle growth

solution

pH control

Sample

Solution

time control

Growth time ~ 120 Min Growth time ~ 180 Min

pH control

DAP =0 mM DAP =190 mM

DAP = 150 mM DAP = 120 mM

Hydrothermal Growth of Nanoneedle

Pristine

Solar cell

ZnO Seed

Layer

deposition

Solar cell

coated with

Ta2O5 layer

ZnO seed layer

Spin coated

Solar cell placed

upside down in

the aqueous

solution bath at

85 oC

Growth period

of 3 hour

Ta2O5 Sol-

gel

spin coated

Solar cell was

rinsed thoroughly

with DI water,

dried under

nitrogen annealed

at 150 oC

CBD Growth of ZnO

nanoneedle arrays

Solar cell with ARC

Chemical bath deposition process of zinc oxide nanoneedle for Broadband

nanostructure antireflection coating

Sol-Gel Growth of antireflection coating layers

0

200

400

600

800

400 450 500 550 600 650 700 750 8000.0

0.5

1.0

1.5

2.0

Emission

InP/ZnS Nanocrystals

In:P:MA:Zn:S=1:1:3:1:1

Rxn. Time 30 min.

Growth Temperature 300 C

Flu

orescen

ce (arbit. u

nits)

Absorption

Wavelength (nm)

Ab

sorb

ance

(ar

bit

. u

nit

s)

Growth of InP/ZnS Nanocrystals

UV light off UV light on

Growth of semiconductor Nanocrystals and metallic nanoparticles

400 450 500 550 600 650 700 750

InP/ZnS Nanocrystals

In:P:MA:Zn:S=1:1:3:1:1

Reaction temp. : 300 C

1 min.

30 min.

120 min.

Norm

aliz

ed F

luore

scen

ce

Wavelength (nm)

Abso

rban

ce (

abit

. unit

s)

UV light off UV light on

300 400 500 600 700 800 900 1000 1100

0.0

0.1

0.2

0.3

Energy (eV)

Excitation

InA

s Q

D e

mss

ion

ran

ge

641 nm

529 nm Au nanoparticles in toluene

Abso

rban

ce (

arbit

. u

nit

s)

Wavelength (nm)

3.6 3.0 2.4 1.8 1.2

hnPlasmonic effect

0 20 40 60 80 1000

5

10

15

20

25

30

24

2 2 4 4

24

p pc q c q

(

eV)

q (nm-1)

24

2 2 4 4

24

p pc q c q

= cq

2

p

s

Plasmon dispersion

d

m

|EZ|

Z

2

1 d md

dq

2

1

propgation in free space

d mm

mq

qc

Bulk Plasmon

Surface Plasmon

Anti-reflection Coating of Solar Cells

ZnO nanorods

• Sol-gel technique is employed to synthesize metal oxide antireflection coating.

• Hydrolysis of metal precursors is carried out to form the sol gel.

Titanium tetra

isopropoxide (TTIP)

0.5M TTIP solution

Hydrolysis with H2O

Titanium Dioxide

sol-gel

2-propanol

pH control

with HCl

Zinc acetate

dihydate (ZnAc)

0.5M ZnAc solution

Hydrolysis with

ethanolamine

Zinc oxide

sol-gel

2-propanolTantalum

ethoxide (TaEt)

Hydrolysis with

H2O

Tantalum pentoxide

sol-gel

2Methoxy

ethanol

pH control with

Diethanolamine

0.02M TaEt solution

Tantalum pentoxide

sol-gelZinc Oxide

sol-gelTitanium Dioxide

sol-gel

Pristine

solar cell

Solar cell

with coating

Spin coated sol-gel films with

increasing coating speed on GaAs.

Samples from the left, pristine,

4000,6000, 8000, 10000 and 12000

rpm.

Transparent sol-gel

synthesized by

hydrolysis.

600 800 1000 1200 1400 1600 1800 20000.0

0.2

0.4

0.6

0.8

ABS

PR_10 m

PR_20 m

PR_50 m

Vbias

= 5 V

Wavelength (nm)

Ab

sorb

ance

(ar

b.

un

its)

PbSe nanocrystals - Mercaptoacetic acid ligand

0

20

40

60

80

100

120

140

160

180

200

Ph

oto

resp

on

se (

arb

. u

nit

s)

divided by 10

2 1.8 1.6 1.4 1.2 1 0.8

Energy (eV)

600 800 1000 1200 1400 1600 18000.0

0.2

0.4

0.6

0.8

Wavelengths (nm)

Ab

sorb

ance

(ar

b.

un

its)

0

100

200

300

400

500

600

700

800

hn

e'

Conduction

Band

A3A2A1

A3

A2

PL

in

ten

sity

(ar

b.

un

its)

A1

Valence

Band

-5 -4 -3 -2 -1 0 1 2 3 4 510

-10

10-9

10-8

10-7

10-6

10-5

10-4

Idark

10 m

Iphoto

10 m

Idark

20 m

Iphoto

20 m

Idark

50 m

Iphoto

50 m

PbSe nanocrystals - Mercaptoacetic acid ligand

Cu

rren

t (A

)

Voltage (V)

hn

Anti-reflection coating layer

Back contact metal

Device active region

Optical nanoantenna

200 nm

Photodetector

Active region

Opticalnanoantenna

Metasurfaces and nanoantennas coupled photodetectors

COMSOL FEM Model of Au interdigital finger array ET

EL

Longitudinal Polarization Transverse Polarization

max = 7.49max = 1.6

Optical enhancement = Eloc/E0

Wavelength = 550 nm

400 500 600 700 800 900 10000

10

20

30

40

50

60 Transverse Polarization

Longitudinal PolarizationSemi-insluating GaAs

5 m Channel - Au(50nm)/Ti(30nm)

VBias

= 5 V , Gain 105

Spec

tral

Res

po

nse

(ar

b.

un

its)

Wavelength (nm)

-5 -4 -3 -2 -1 0 1 2 3 4 5

10-8

10-6

10-4

10-2

100

5 um Channel / Au (50nm) Contacts

Undope-GaAs

Cu

rren

t (A

)

Voltage (V)

Dark Current

350 mW/cm2

40 mW/cm2

400 500 600 700 800 900 10000

50

100

150

200

250

300

350

400

5 m

10 m

20 m

50 m

2 mm

Au(50nm)/Ti(30nm) contacts

Semi-insulating GaAs

VBias

= 1V , Gain 105

Elecrode Spacing

S

pec

tral

Res

po

nse

(ar

b.

un

its)

Wavelength (nm)

0 1 2 3 4 5

107

108

109

1010

1011

Det

ecti

viv

ty D

* (

cm H

z1/2 W

-1)

Bias Voltage (V)

5 m

50 m

Dopt

P*

2eIP

AID

IP = the photocurrent, A = the device effective area, Popt. = the incident optical power density, ID = the dark current

Room Temperature Detectivity

Where do we go from here?

• Apply the plasmonic and anti-reflection approaches to

solar cells to enhance their performance.

• Utilize the nanomaterials to fabricate sensors, such as

electrochemical sensors and biosensors.

• Utilize the nanomaterials to fabricate large area and

high brightness LEDs for flat panel displays.

• Powering an LED Using GaAs pn junction solar cell.

• Total area of the nine devices is 0.81 cm2.

• One sun AM1.5 solar simulator

0.0 0.2 0.4 0.6 0.8 1.0 1.2-60

-50

-40

-30

-20

-10

0

10

20

30

100 C substrate temperature

Solar Simulator = 3 sun AM 1.5

FF=0.77

UCLA01- GaAs pn junction

75/20/25nm AuGe/Ni/Au n-type contact

30/30/100nm Au/Zn/Au p-type contact

Without Annealing

(Vo

c=1.0

2 V

)

(0.84,42.9)(JSC

=45.51 mA/cm2)

Curr

ent

Den

sity

(m

A/c

m2)

Voltage (V)

Darkcurrent

Photocurrent

0.0 0.2 0.4 0.6 0.8 1.0

-75

-60

-45

-30

-15

0

15

30

Jsc= 60.3 mA/cm2

Cu

rren

t D

en

sity

(m

A/c

m2)

Vo

c=

1.0

3 V

Jsc= 71.4 mA/cm2

Jsc= 47.14 mA/cm2

Voltage(V)

Pristine GaAs

Ta2O5 coating

ZnO nanoneedle/Ta2O5 bilayer coating

400 500 600 700 800 9000

10

20

30

40

50

60

70

EQ

E(%

)

Wavelength(nm)

Pristine GaAs

Ta2O5 coating

ZnO nanoneedle/Ta2O5

bilayer coating

300 350 400 450 5000

1

2

3

4

5

ZnO nanorods on ITO substrate

Ab

sorb

ance

(ar

b.

un

its)

Wavelength (nm)

200 300 400 500 600 700

200

400

600

800

1000

1200

A1

ZnO nanorods on ITO substrate

Inte

nsi

ty (

arb

. u

nit

s)

Raman Shift (cm-1

)

E2 (high)

E12E2

Biosensors: Glucose sensor based on ZnO Nanorods

Electrochemical sensors: Glucose

sensor based on ZnO Nanorods

ZnO/ITO/Glass

0.00 0.25 0.50 0.75 1.00

2.5

3.0

3.5

4.0

4.5

curr

ent

(A

)

concentration (mM)

Sensitivity of ZnO nanorods biosensor using

spin coating method

Sensitivity = 5.8 A mM-1*cm

-2

0 25 50 75 100 1251.0

1.5

2.0

2.5

3.0

3.5

4.0

4 mM

3 mM

2 mM

Curr

ent

(mA

)

Time (second)

ZnO nanorods biosensor with nafion membrane with different

concentrations of glucose

1 mM

0 20 40 60 80 100 120

2.0

2.5

3.0

3.5

4.0

4.5

0.25 mM

1 mM

0.75 mM

0.5 mM

Curr

ent

(mA

)Time (s)

Chem Commun (Camb). Author manuscript; available in PMC 2013 July 11. Joseph Wang: [email protected]

Zero bias voltage

QDLED biased with 10 V

Light off light onCdSe/ZnS core/Shell

nanocrystals

NiO hole transport layer (~60 nm)

ZnO electron transport layer (~60 nm)

CdSe/ZnS QD layer (~ 20 nm)

Al/Ag cathode metal (50 nm)

FTO coated glass anode

Schematic of a colloidal Quantum dot LED (QDLED)

device structure with charge transport layers.

0 1 2 3 4 5 6 7 8 90

25

50

75

100

125

150

Curr

ent

Den

sity

(m

A/c

m2)

Voltage (V)

CdSe/ZnS QD LED

Emission at ~520 nm

Anode/HTL/QD/ETL/MgF2/Cathode

FTO/NiO/CdSe/ZnS/ZnO/MgF2/Al

e-

h+

QDLED

MgF

Questions