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UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Document information Info Content Keywords UBA2015AP, evaluation board, dimming, boost Abstract This document describes the performance, technical data and wiring of the UBA2015AP 120 V (AC) evaluation board.
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UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

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Page 1: UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

UM10438UBA2015AP 120 V (AC) evaluation boardRev. 2.1 — 9 March 2012 User manual

Document information

Info Content

Keywords UBA2015AP, evaluation board, dimming, boost

Abstract This document describes the performance, technical data and wiring of the UBA2015AP 120 V (AC) evaluation board.

Page 2: UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

Revision history

Rev Date Description

v.2.1 20120309 fourth issue

v.2 20111117 third issue

v.1.1 20110912 second issue

v.1 20110826 first issue

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 2 of 38

Contact informationFor more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: [email protected]

Page 3: UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

1. Introduction

This evaluation board is intended to build applications with the UBA2016A, UBA2015A and UBA2015 ballast controller family. This document describes the specification and use of the board. This ballast design is intended to drive one 35W T5 lamp with the UBA2015AP. However, several options are provided on the board to use it with the UBA2016AP and UBA2015P.

WARNING

Lethal voltage and fire ignition hazard

The non-insulated high voltages that are present when operating this product, constitute a risk of electric shock, personal injury, death and/or ignition of fire.

This product is intended for evaluation purposes only. It shall be operated in a designated test area by personnel qualified according to local requirements and labor laws to work with non-insulated mains voltages and high-voltage circuits. This product shall never be operated unattended.

Fig 1. Photograph of the UBA2015AP evaluation board

aaa-000409

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 3 of 38

Page 4: UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

2. Safety warning

This evaluation board is connected to a high AC voltage (up to 200 V). Avoid touching the reference board during operation. An isolated housing is mandatory when used in uncontrolled, non-laboratory environments. Galvanic isolation of the mains phase using a fixed or variable transformer (Variac) is always recommended. The symbols shown in Figure 2 indicate these devices.

3. Specification

a. Isolated b. Not isolated

Fig 2. Variac isolation symbols

019aab173 019aab174

Table 1. Specifications for the evaluation board

Parameter Description

Ballast type electronic

Starting method programmed start with preheat

Lamp terminals 4

Line voltage 100 V to 140 V

Line frequency 50 Hz or 60 Hz

Number of lamps 1

Dimming interface 1 V to 10 V

Transient protection IEC61547

Table 2. Supported lamps

Lamp type Description

T5 35W 35 W T5 high-efficiency fluorescent lamp

Table 3. Ballast performance

Lamp type Lamps Po (W)

Maximum THD

Maximum lamp current crest factor

Power factor

Nominal lamp current

(A)

Minimum lamp current (mA)

T5 35W 1 35 10 % 1.7 >0.95 0.170 5

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 4 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

Remark: The chassis (if any) must connect to the earth which is available on mounting hole E1.

Remark: Before powering up the board, check if the three MOSFETs are correctly mounted. During transport, the MOSFETs can become detached.

Fig 3. Wiring diagram

green/yellow

EVALUATION BOARD

X3

X7

X2

E1

LAMP T5 35W

aaa-000350

blue

violet (+)

grey (-)

brown

blue

red

red

blue

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 5 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

4. Performance data

4.1 Power factor, THD and input power

4.2 Dimming curve

(1) PF.

(2) Current THD.

(3) input power.

Fig 4. Power factor, THD and input power as function of the mains input voltage

aaa-000351

RMS mains voltage (V)90 130 170 210 250 290

1.2

1.0

0.8

0.6

0.4

0.2

PF,THD

44.4PIN(W)

0 42.0

42.4

42.8

43.2

43.6

44.0(1)

(2)

(3)

(1) Measured with an AC coupled current probe

Fig 5. Normalized lamp discharge current as function of the DIM input voltage

40

60

20

80

100

0

dim input voltage (V)0 1084 62

aaa-000352

normalized lampdischarge current (A)

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 6 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

4.3 Sum of Squares (SoS) curve

(1) SoS (maximum).

(2) SoS target.

(3) SoS measured.

(4) SoS (minimum).

a. SoS results

(1) ILH (maximum).

(2) IL1 measured.

(3) ILL (maximum).

(4) IL2 measured.

b. Maximum lead current check

Fig 6. Sum of Squares and maximum lead current check

0.02

0.04

0

0.06

0.08SoS(A2)

-0.02

lamp discharge current (A)0 0.200.150.05 0.10

aaa-000353

(1)

(2)

(3)

(4)

0.10

0.20

0.30

current(A)

0

lamp discharge current (A)0 0.200.150.05 0.10

aaa-000354

(4)

(2)

(3)

(1)

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 7 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

4.4 ElectroMagnetic Interference (EMI) emission tests

a. 115 V (AC) L

b. 115 V (AC) N

Fig 7. EMI – conducted emission test results

aaa-000355

aaa-000356

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 8 of 38

Page 9: UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

5. Board Information

The input section includes the fuse; surge protection against fast AC transients; EMI filter; double side rectifier and pre-conditioner or power factor correct (PFC). The output of the PFC connects to a buffer electrolytic capacitor to supply the half-bridge circuit. The lamp connects to the half-bridge circuit. The UBA2015AP controller IC controls the PFC and the half-bridge circuit. A low-voltage control input is present to control the dimming of the lamp light output.

The PFC is implemented as an up-converter in boundary conduction mode. The resonant circuit is voltage fed by the half-bridge which consists of two NMOST transistors. The resonant circuit includes a transformer for electrode preheating and heating.

The type of ballast presented here is used for most ballast for lamp powers above 25 W. It has proven to be a cost effective application.

Remark: Some of the components are overrated for this evaluation board. When designing a final application, some component ratings can be lowered and some circuits can be simplified or combined to reduce component count and costs.

5.1 Dimming without using an external voltage source

The ballast is dimmed with a voltage source of 1 V (DC) to 10 V (DC) connected to connector X7.

It is also possible to dim with an external potentiometer of 470 k (for example, no external voltage supply is available). The potentiometer must connect to pin 1 (black wire, DIM) and pin 2 (red wire, DIM+) of connector X7.

5.2 Half-bridge operating principle

This topology supports dimming and preheat times below 1 s for T5 lamps. It uses an additional transformer for preheating/heating the filaments.

Fig 8. Block diagram

aaa-000357

FUSE EMIFILTER

mainsvoltageinput

1 V to 10 Vdim

input

SURGEPROTECTION

ACRECTIFIER

RESONANTCIRCUIT

lampPFC BUFFERCAPACITOR

HALFBRIDGE

DIM UBA2015ACONTROLLER

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User manual Rev. 2.1 — 9 March 2012 9 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

When the lamp is off, two resonant frequencies can be distinguished. A main resonant frequency fres and a second frequency fsec. Approaching fres will ignite the lamp:

(1)

Preheating the electrodes near fsec increases the preheat current without increasing the filament current during normal operation. In dimmable applications, this aids compliance with the lamp sum of squares requirement.

(2)

Rx is used to limit the voltage across Cx and LxA when the lamp is removed during preheat or ignition.

Fig 9. Half-bridge topology

aaa-000358

Cres3.3 nF

Cdc150 nF

T5 35WRx4.7 kΩ

Cx33 nF

Cfil

Cfil

LxA127 μH

LxC4.1 μH

LxB4.1 μH

420 V

Qhighside

Qlowside

Lres

3.5 mH

330 nF

330 nF

fres1

2 Lres Cres----------------------------------- fres 46.8 kHz==

fsec1

2 LxA Cx--------------------------------- fsec 77.7 kHz==

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 10 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

The UBA2015AP controller starts at 100 kHz and sweeps down until the preheat frequency is reached. The resistor on pin PH/EN sets the preheat frequency. During preheat, the LC tank voltage remains below 200 V to prevent early ignition and glow.

(1) Ifil.

(2) LC tank voltage.

Fig 10. Half-bridge frequency response with lamp not ignited

aaa-000359

f (kHz)40 1008060

0.4

0.6

0.2

0.8

1.0current

(A)

0

0.8

1.2

0.4

1.6

2.0voltage

(kV)

0

(2)

(1)

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User manual Rev. 2.1 — 9 March 2012 11 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

5.3 Schematic diagrams

Fig 11. Schematic diagram: Half-bridge circuit

J13-1R33

R34

33 Ω

47 kΩ

J13-2

J13-3

BUS

RES

GHHB

SHHB 3

1

2 GDS=123

placed in header

Q22N60C

J14-1R35

R36

33 Ω

R14

10 kΩ

R25

10 kΩ

10 kΩ

J14-2

J14-3

J17

J9close

R121.33 Ω

R131 Ω

C73.3 nF

R266.19 Ω

R2723.7 Ω

R3220 Ω

C9330 nF

R11205 kΩ

R20220 kΩ D11

1N4937 D121N4937

D91N4937

R2127 kΩ

C13470 nF

C15100 nF

R281 Ω

D71N4937

R191 kΩ

D81N4937

R105.1 kΩ

C11100 pF

C1033 nF

R1510 MΩ

R181 Ω

J10open

J15close 1-2

close

GLHB

SLHB

IFB

BUS3

3

1

3

2

2 13

2 13

21

GND

GND

1

2 GDS=123

placed in header

Q32N60C

J7

close52

J5

T23.5 mH/1.4 A750312352

close

R24237 kΩ

R2975 kΩ

R22237 kΩ

R37150 kΩ

C133 nF

R74.7 kΩ

VFB

C8150 nF

J16close 1-2

J12close 1-2

J18close

D131N4937J8

close

1.9 V

CDC

EOL

GND aaa-000360

IFB

TP6

R4

249 kΩ

R3

X11X1-1

X13X1-2

X15X1-3

X17X1-4

249 kΩ

R2

249 kΩ

R1

249 kΩ

C2

330 nF

T1A, 127 μH, 1.8 A760800001

T1C4.1 μH

T1B4.1 μH

C4330 nF

R5

11 kΩ

HVPROBE

GND

T5 35W

X2

1

1

2

34

4

2

3

TP7J1

J2

J3

1

23

4

6

8

J4

close

closeRELAMP

close

close

TP10

TP12

TP15

R8

23.7 kΩ

R31

100 Ω

UM10438 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

User manual Rev. 2.1 — 9 March 2012 12 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

Fig 12. Schematic diagram: PFC circuit

aaa-000361

X12Chassis

X14Mains_N

X16Mains_L

F1T1A

C5

C3

4

1

3

2

C14220 nF

2.2 nF

R6

165 kΩD1

1N5062

D4

UF4006

R9

165 kΩ

L12 x 15 mH

2

11

5

9

T31.1 mH/2.7 A/Np:Ns = 57

750312407

V1710 V

220 nF

D51N5062

C6470 nF

GND

D61N5062

D21N5062

D31N5062

R394.7 Ω

R231 Ω

R443.48 kΩ

J19close

J20open

J21open

R462.4 kΩ

U2

R452.5 kΩ

TLVH431

U1 TLVH431

1

3

2

GND

R4347 kΩ

R3010 Ω

R16562 kΩ

R17562 kΩ

R42562 kΩ

R41562 kΩ

R40100 kΩ

R38187 kΩ

C1647 μF350 V

C1210 nF

C1747 μF350 V

J11close

J6-1J6-2J6-3

D10

1N4937

X3

3

2

1

BRIDGEVDD

BUS

AUX 1V9

3

1

2 GDS = 123

placed in header

Q16N60C

GPFC

FBPFC

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User manual Rev. 2.1 — 9 March 2012 13 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

Fig 13. Schematic diagram: controller circuit

aaa-000362

CPT

J28close

J30open

J31open

J32close

J33open

R69

41.2 kΩ

C4010 nF

C3922 nF

C3847 nF

C37100 nF

C4147 nF

CF

BUS

PREHEAT

J23close

J25close

J24open

J26open

C3510 pF

C3422 pF

C42100 nF

D24BZX79-C3V3

C4322 μF16 V

R552.2 MΩ

R592.2 MΩ

R7547 kΩ

R72470 kΩ

D251N4937

C44

100 μF50 V

C3347 pF

C32100 pF

C29100 pF

GND

GND GND

GND

DIM

BOOST

R67

R71

47 kΩ

D23J27

open

J36close 1-2

1 2 3

1N4937

10 kΩ

R681 kΩ

R7033 kΩ

SW1disable

13 4

4

21 23

2 R74500 kΩ

R7353.6 kΩ

J35close 1-2

3 2 1

U3

J29open

C26100 nF

D161N4744A

C23470 nF

Q7BC557B

Q6BC557B

D191N5224B

UBA2015AP

PH/EN

DIM

BOOST

1 2

J34close 1-2

3

PREHEAT

CPT

CF

DIM

CPT

CFCIFB

CIFB

IREF

VFB

EOL R6033 kΩ

R6133 kΩ

C2410 nF

C25

470 nF

GND

IFB

SLHB

VFB

EOL

IFB

SLHB

FBPFCFBPFC 11

12

13

14

15

16

17

18

19

20

10

9

8

7

6

5

4

3

2

1

COMPPFCCOMPPFC

AUXPFC

GPFCGPFC

GND

VDDVDD

GLHBGLHB

SHHB

FSHB

GHHBGHHB

AUXPFC

IREF

FSHBC21

100 nF

C22

1 nF500 V

SHHB

C2868 nF

R5110 MΩ

C27100 nF

R621 kΩ

R64

390 kΩ

AUX

R58

D18

1N4937

100 Ω

C36

22 nF

D141N4744A

GND

GND

R65Reserved

R66100 Ω

D221N4937

R47750 kΩ

RELAMP

switch off when lamp is removedswitch on when lamp is inserted

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User manual Rev. 2.1 — 9 March 2012 14 of 38

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NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

Fig 14. Schematic diagram: dim input circuit

X12DIM+

X19DIM-

X7

2

1

GND

TP32

SHHB

DIM

D15BZX79-C3V3

R525.6 kΩ

J22close 1-2

1 2 3

Q42N3819

Q5BC547C

R54

1 MΩ

R56

4.99 kΩ

R49

4.99 kΩ

C18

22 pF500 V

C19100 nF

R501 kΩ

R571 kΩ

D171N4937

D20 1N4937D21

BZX79-C12 RT1150 Ω

T4, 2 x 10 mH750311081

Q8BC547C

R53261 kΩ

C2010 nF

C30100 nF

C31100 nF

R634.7 kΩ

6

4

1

2

R483.3 kΩ

aaa-000363

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User manual Rev. 2.1 — 9 March 2012 15 of 38

Page 16: UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

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User m

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al

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P S

emico

nd

ucto

rsU

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UB

A2

015

AP

12

0 V (A

C) ev

alu

ation

bo

ard

TP22

TP26

TP31

TP35

TP43

TP50

TP55

TP62

TP73

TP76

TP79

TP82

EXPERIMENTINGAREA

EXPERIMENTINGAREA

EXPERIMENTINGAREA

X5

2

3

1

4

X6

2

3

1

4

X8

2

3

1

4

TEST CONNECTIONS FOR PROBES

aaa-000364

All inform

ation provided in this docum

ent is subject to legal disclaim

ers.©

NX

P B

.V. 20

12. All rights reserved

.

Rev. 2.1 —

9 March

2012

16 o

f 38

Fig 15. Schematic diagram: test points

TP37 SLHB

TP39 IFB

TP44 EOL

TP46 VFB

TP51 IREF

SHHB

TP20

TP24

TP29

TP33

TP28

TP21

TP25

TP30

TP34

TP36

TP56 CIFB

TP58 CF

TP64 CPT

TP69 DIM

TP10_1 PREHEAT

TP10_2 BOOST

TP38 GHHB

TP40 FSHB

TP45 SHHB

TP47 GLHB

TP52 VDD

TP59 GPFC

TP65 AUXPFC

TP68 COMPPFC

TP70 FBPFC

TP3 TP86

TP9 BUS

TP1 BRIDGE

TP8 Chassis

TP14 Mains_L

TP11 Mains_N

TP13 CDC

TP23 RELAMP

TP16 RES

TP63 DIM+

TP67 DIM-

GND

TP41

TP48

TP53

TP60

TP42

TP49

TP54

TP61

TP66

GND

GND GND GND

TP71

TP74

TP77

TP80

TP72

TP75

TP78

TP81

TP87

GND

GROUND CONNECTIONS FOR PROBES

MOUNTING HOLES

TP85 TP84 TP83 TP89 TP88 TP19 TP4 TP18 TP2 TP5 TP27 TP17

Chassis

E1

spacerM3X10-VZK

TP57

X1

jumper link

jumper link

X9

GND GND

X4

jumper link

jumper link

X10

E2

spacerM3X10-VZK

E3

spacerM3X10-VZK

E5

spacerM3X10-VZK

E4

spacerM3X10-VZK

Page 17: UM10438 UBA2015AP 120 V (AC) evaluation board · UM10438 UBA2015AP 120 V (AC) evaluation board Rev. 2.1 — 9 March 2012 User manual Info Content Keywords UBA2015AP, evaluation board,

NXP Semiconductors UM10438UBA2015AP 120 V (AC) evaluation board

5.4 Functional description

The mains voltage is applied to the board and current flows through R6 and R9 to the supply of the controller (VDD pin). When the current through R6 and R9 is higher than 240 A (Istb(VDD)), the controller the VDD voltage rises. When the VDD voltage is above 4.2 V (Vrst(VDD)), the half-bridge circuit low-side MOSFET switches on and the floating supply capacitor C1 is pre-charged.

The controller starts oscillating when the VDD voltage is above the 12.4 V (Vstartup(VDD)). The PFC gate driver starts and the HB gate drivers start oscillating at 100 kHz (fsw(high)). The dV/dt supply with capacitor C22 takes over the VDD supply to supply the IC with enough energy for the gate drivers. The preheat timer starts and the controller sweeps the frequency down from 100 kHz to the preheat frequency set by the PH/EN pin. The oscillator remains at the preheat frequency until the preheat timer has ended.

When the preheat ends, the controller sweeps down to the half-bridge switching frequency. The lamp ignites when the LC tank voltage reaches the lamp ignition voltage. The ignition frequency is typically 50 kHz. The lamp current increases and the LC tank voltage decreases. The controller senses the lamp current and LC tank voltage. When the lamp current is high enough and the LC tank voltage is low enough for 3 ms (VIFB > Vth(lod)IFB and VVFB < Vth(lod)VFB for td(lod)), the controller assumes that the lamp is on. The controller enters burn state.

In burn state, all the protection features are activated. The controller closes the lamp current control loop and the oscillator regulates the half-bridge switching frequency. The half-bridge frequency is regulated and reaches its set point when the average absolute IFB pin voltage equals the DIM pin voltage.

5.4.1 Start-up current, relamp and antistriation

The VDD supply of the IC is charged with a start-up current derived from the rectified mains voltage. Resistor R2 provides the current path and determines the start-up voltage level.

When the lamp is removed while the IC is set to deep dimming, a protection is triggered and the controller is shut down. In this board, transistor Q7 pulls down the VDD voltage. The signal RELAMP indicates the filament of the lamp and controls transistor Q7. The pull-down by Q7 is released when the lamp is inserted.

UBA2015P and UBA2015AP can also be disabled by pulling down the voltage on the PH/EN pin.

The RELAMP signal is generated with a DC current injection on the DC blocking capacitor C8. This DC current also takes care of the antistriation function.

5.5 Evaluation board features

This board is equipped with evaluation functionality. This section described the additional functionality and how to use the jumpers.

5.5.1 Default jumper settings

Table 4 shows the default (factory) configuration jumper settings with the UBA2015AP mounted.

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5.5.2 Supporting other IC versions

The board supports all DIP versions of the ballast controller family. Make sure that the BUS capacitor is discharged when replacing ICs.

Table 4. Default jumper setting

Jumper Function Type UBA2015AP

J1 Lamp connection 2-pin closed

J2 Lamp connection 2-pin closed

J3 Lamp connection 2-pin closed

J4 Lamp connection 2-pin closed

J5 HB inductor 2-pin closed

J6 PFC MOSFET socket socket 6N60C

J7 HB inductor 2-pin closed

J8 EOL circuit 2-pin closed

J9 HB current sense 2-pin closed

J10 HB current sense 2-pin open

J11 PFC over current sense 2-pin closed

J12 EOL disable 3-pin closed 1-2

J13 HB MOSFET socket high-side socket 2N60C

J14 HB MOSFET socket low-side socket 2N60C

J15 IFB input select 3-pin closed 1-2

J16 Lamp current sense circuit select 3-pin closed 1-2

J17 HB current sense 2-pin closed

J18 EOL circuit 2-pin closed

J19 Bus voltage setting 2-pin closed

J20 FBPFC fixed voltage 2-pin open

J21 Bus voltage adjustable 2-pin open

J22 DIM input setting 3-pin closed 1-2

J23 CF capacitor bank 100 pF 2-pin closed

J24 CF capacitor bank 47 pF 2-pin open

J25 CF capacitor bank 22 pF 2-pin closed

J26 CF capacitor bank 10 pF 2-pin open

J27 Start-up dim level 2-pin open

J28 CPT test 2-pin closed

J29 PFC disable 2-pin open

J30 CPT capacitor bank 100 nF 2-pin open

J31 CPT capacitor bank 47 nF 2-pin open

J32 CPT capacitor bank 22 nF 2-pin closed

J33 CPT capacitor bank 10 nF 2-pin open

J34 Boost/ fixed freq preheat select 3-pin closed 1-2

J35 Preheat frequency setting 3-pin closed 1-2

J36 Boost select 3-pin closed 1-2

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5.5.2.1 UBA2015P

The UBA2015P IC is a non-dimmable version with fixed frequency preheat option. The UBA2015P does not support boost.

The default jumper settings are suited. The DIM input pin of the UBA2015P is internally not connected.

5.5.2.2 UBA2016AP

The UBA2016AP IC is a dimmable version with no fixed frequency preheat option. The UBA2015AP supports boost.

5.5.3 Evaluation features and alternative jumper settings

5.5.3.1 PFC overcurrent adjustment

[1] Default setting.

5.5.3.2 External supply for the half-bridge circuit with PFC disabled

Experimenting with an external voltage (laboratory supply or separate PFC controller) for the BUS is possible. Fix the PFC feedback signal FBPFC and the COMPFC to 1.24 V.

The default bus voltage is 420 V (DC). When adjusting the bus voltage it is advised to disable the EOL protection with jumper J12.

The external laboratory supply must connect to the BRIDGE (TP1) because the start-up current supplies the VDD pin.

5.5.3.3 Bus voltage adjustment with PFC enabled

The default bus voltage is 420 V (DC). With the alternative jumper settings shown in this paragraph, it is possible to adjust the bus voltage. When adjusting the bus voltage, it is advised the EOL protection is disabled using jumper J12.

Table 5. UBA2016AP jumper setting

Jumper Function Type UBA2016AP

J9 HB current sense 2-pin open

J34 Boost/fixed freq preheat select 3-pin closed 2-3

Table 6. Jumper settings: PFC overcurrent sense resistor

Jumper Function Setting RSENSE

J11 PFC over current sense closed 0.82 [1]

J11 open 1

Table 7. Jumper settings: PFC disable for external half-bridge supply

Jumper Function Setting

J6 PFC MOSFET socket remove MOSFET

J19 Bus voltage setting open

J20 FBPFC fixed voltage 1.24 V closed

J21 Bus voltage adjustable open

J29 PFC disable closed

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The bus voltage Vbus is adjustable with resistor R45:

• R45 turned clockwise: Vbus = 300 V (DC)

• R45 turned counter clockwise: Vbus = 600 V (DC)

5.5.3.4 Half-bridge frequency control loop options

The default setting is lamp current control. The controller can regulate any other signal such as the HB current. The controller increases the half-bridge switching frequency when the feedback signal is too high. The controller decreases the half-bridge switching frequency when the feedback signal is too low.

[1] Default setting.

HB current sense (J15 closed 2-3): Some LC tank topologies allow dimming to 10 % via the HB current sense. The HB current is fed back to the IFB pin and the controller regulates the HB current.

Remark: The LC tank topology on this board is not suited for dimming via the HB current sense. A dedicated LC circuit could be placed in the experiment area, see NXP Semiconductors AN10872 for suitable series resonant type of circuits.

Disabled (J15 open): The IFB pin is internally pulled down to ground level when the IFB pin is left open. The controller then operates at the minimum operating frequency set by the CF capacitor. The default minimum operating frequency is default 43 kHz.

Remark: It is recommended to connect the IFB pin to ground instead of leaving J15 open to avoid interference on the PCB track.

5.5.3.5 Lamp current sense

There are two lamp current sense circuits on the evaluation board; by default the non-linear sense circuit is selected.

The IC contains a double-sided rectifier. This setup means that no rectification is required in the sense circuit.

Table 8. Jumper settings: PFC output voltage (VBUS) adjustment

Jumper Function Setting

J19 Bus voltage setting open

J20 FBPFC fixed voltage open

J21 Bus voltage adjustable closed

Table 9. Half-bridge frequency control loop jumper setting

Jumper Function Setting IFB input

J15 IFB input select closed 1-2[1] Lamp current

J15 closed 2-3 HB current

J15 open Disabled

Table 10. Half-bridge frequency control loop jumper setting

Jumper Function Setting Remarks

J16 Lamp current sense circuit select closed 1-2[1] non-linear

J16 closed 2-3 adjustable resistor

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[1] Default setting.

Non-linear sense: Compared to a normal (linear) sense resistor, this circuit has the advantage that:

• The control is less sensitive and the light output can be regulated more accurately

• The lamp current feedback signal is larger and therefore less sensitive to disturbances

Adjustable resistor: The lamp current can be adjusted with resistor R32:

• R45 turned clockwise: RSENSE = 21

• R45 turned counter clockwise: RSENSE = 1

5.5.3.6 Half-bridge current sense resistor

Several values can be programmed with the jumpers J9 and J10.

[1] Default setting.

During the leading edge (300 ns) of the GLHB, the SLHB voltage is blanked inside the IC. In case fixed frequency preheat is required, the SLHB voltage must remain below Vctrl(ph)SLHB minimum level (0.44 V) during start-up and preheat.

In case current controlled preheat is required, the SLHB voltage peak must be the Vctrl(ph)SLHB typical level (0.48 V) during preheat.

5.5.3.7 Preheat frequency adjustment

The resistor on pin PH/EN sets the preheat frequency. Using a jumper option, adjustable resistor R74 is used to set the preheat frequency.

[1] Default setting.

• R74 turned clockwise: RPH/EN = 500 k

• R74 turned counter clockwise: RPH/EN = 33 k (preheat at fsw(high))

Table 11. Half-bridge frequency control loop jumper setting

Jumper Setting Function RSENSE ()

J9 J10

closed closed HB current sense 0.5

closed open 1[1]

open closed 1.88

open open 2.33

Table 12. Fixed frequency preheat

Jumper Setting Preheat frequency

J34 J35

closed 1-2 closed 1-2 76 kH[1]

closed 1-2 closed 2-3 adjustable between fsw(high) and current controlled preheat function on pin SLHB

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5.5.3.8 Enable disable function

To evaluate the disable/enable function on the PH/EN pin, a switch SW1 is placed on the board to pull down the PH/EN voltage. In normal ballast circuits, a transistor replaces the switch. The transistor pulls down the PH/EN pin, in a similar way to the open-drain of a microcontroller.

• Enable: Press SW1 before power-on and release after power is applied

• Disable: Press SW1 after power is applied and the lamp is on

5.5.3.9 PFC THD waveshaper circuit disable

To measure the THD performance without waveshaping circuit: the THD waveshaping feature can be disabled by removing capacitor C36.

5.5.3.10 Boost mode

The boost function is only in the UBA2016A IC. The UBA2015 and UBA2015A have instead of the boost function the fixed frequency preheat with enable/disable option and burn state indicator.

The boost circuit is designed to boost only at power-on of the ballast.

[1] Default setting.

5.5.4 Half-bridge operating frequency

The operating frequency is set using the CF capacitor bank. fsw(high) is always 2.4 times fsw(low). Table 14 shows frequency values while IBOOST = 0 A.

Table 13. Fixed frequency preheat

Jumper Setting IC Boost mode

J27 J34 J36

- closed 1-2 closed 1-2 UBA2015 disabled

- closed1-2 closed 1-2 UBA2015A[1]

- closed 2-3 closed 2-3 UBA2016A

open closed 2-3 closed 1-2 UBA2016A enable

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[1] Outside the specification.

[2] Default setting.

5.5.5 Preheat timer and slow fault timer capacitor bank

The preheat time is set using the CPT capacitor bank. The default fault time is 20 % of the preheat time. This ratio can be modified using series or parallel resistors as explained in the relevant IC data sheet.

[1] Default setting.

Table 14. Jumpers: operating frequency settings

Jumpers headers CF (pF) fsw(low) (kHz)

fsw(high) (kHz)J23 (100 pF) J24 (47 pF) J25 (22 pF) J26 (10 pF)

open open - - 100 ~ 132[1] > 60 > 144

open closed open open 147 59 140

open closed open closed 157 55 131

open closed closed open 169 51 122

open closed closed closed 179 48 115

closed open open open 200 43 103

closed open open closed 210 43 98

closed open closed open 222[2] 41 93

closed open closed closed 232 37 89

closed closed open open 247 35 84

closed closed open closed 257 33 80

closed closed closed open 269 32 77

closed closed closed closed 279 31 74

Table 15. Jumpers: preheat timer and slow fault timer settings

Jumpers headers CF (nF) tph (s) Fault time (s)J30 (100 nF) J31 (47 nF) J32 (22 nF) J33 (10 nF)

open open open open 47 0.44 0.088

open open open closed 57 0.54 0.107

open open closed open 69[1] 0.65 0.130

open open closed closed 79 0.74 0.149

open closed open open 94 0.88 0.177

open closed open closed 104 0.98 0.196

open closed closed open 116 1.09 0.218

open closed closed closed 126 1.18 0.237

closed open open open 147 1.38 0.276

closed open open closed 157 1.48 0.295

closed open closed open 169 1.59 0.318

closed open closed closed 179 1.68 0.337

closed closed open open 194 1.82 0.365

closed closed open closed 204 1.92 0.384

closed closed closed open 216 2.03 0.406

closed closed closed closed 226 2.12 0.425

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5.5.5.1 EOL protection disable

When varying the bus voltage, the EOL protection could be triggered because the EOL pin voltage moves out of the windows comparator. The EOL protection can be disabled by fixing the EOL pin voltage to 1.9 V with jumper J12 for use in experiments.

[1] Default setting.

5.5.5.2 Minimum dim level adjustment

An accurate current source Ibias(DIM) (26 A) inside the controller generates a voltage across the external resistor R52. The easiest way to adjust the minimum dim level is to modified resistor R52.

• A reduced R52 lowers the minimum dim level (less light)

• An increased R52 increases the minimum dim level

Table 16. Jumper settings: EOL functions

Jumper Function Setting

J12 enabled closed 1-2[1]

disabled (fixed to 1.9 V) closed 2-3

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6. Board layouts

Fig 16. Evaluation board (top view)

aaa-000365

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Fig 17. Evaluation board (bottom view)

aaa-000366

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7. Bill of materials

Table 17. Bill of materials

Part reference

Description/Value Part number Manufacturer

C1 33 nF; 5 %; 400 V BFC247066333 Vishay

C2 330 nF; 10 %; 400 V BFC237353334 Vishay

C3 2.2 nF; 20 %; 250 V DE1E3KX222MA4BL01 Murata

C4 330 n; 10 %; 400 V BFC237353334 Vishay

C5 220 nF; 20 %; 275 V BFC233620224 Vishay

C6 470 nF; 5 %; 400 V MKP1840447404M Vishay

C7 3.3 nF; 5 %; 2 kV BFC238580332 Vishay

C8 150 nF; 10 %; 400 V BFC237353154 Vishay

C9 330 nF; 10 %; 400 V BFC237353334 Vishay

C10 33 nF; 5 %; 63 V MKS2C023301A00JSSD WIMA

C11 100 pF; 1 %; 50 V C315C101F5G5TA KEMET

C12 10 nF; 5 %; 63 V MKS2-.01/63/5 WIMA

C13 470 nF; 10 %; 63 V BFC237011474 Vishay

C14 220 nF; 20 %; 275 V BFC233620224 Vishay

C15 100 nF; 10 %; 63 V BFC237011104 Vishay

C16 47 F; 20 %; 350 V EEU-ED2V470 Panasonic

C17 47 F; 20 %; 350 V EEU-ED2V470 Panasonic

C18 22 pF; 5 %; 500 V D220J25C0GL63L6R Vishay

C19 100 nF; 10 %; 63 V BFC237011104 Vishay

C20 10 nF; 5 %; 63 V MKS2-.01/63/5 WIMA

C21 100 nF; 10 %; 63 V BFC237011104 Vishay

C22 1 nF; 10 %; 500 V H102K25X7RL63J5R Vishay

C23 470 nF; 5 %; 63 V MKS20.47/63/5 WIMA

C24 10 nF; 5 %; 63 V MKS2-.01/63/5 WIMA

C25 470 nF; 5 %; 63 V MKS20.47/63/5 WIMA

C26 100 n; 10 %; 63 V BFC237011104 Vishay

C27 100 nF; 10 %; 63 V BFC237011104 Vishay

C28 68 nF; 5 %; 50 V ECQV1H683JL Panasonic

C29 100 pF; 1 %; 50 V C315C101F5G5TA KEMET

C30 100 nF; 10 %; 63 V BFC237011104 Vishay

C31 100 nF; 10 %; 63 V BFC237011104 Vishay

C32 100 pF; 1 %; 50 V C315C101F5G5TA KEMET

C33 47 pF; 5 %; 50 V C315C470J5G5CA7303 KEMET

C34 22 pF; 5 %; 50 V C315C220J5G5TA KEMET

C35 10 pF; 5 %; 50 V C315C100J5G5TA KEMET

C36 22 nF; 5 %; 63 V MKS2C022201A00JSSD WIMA

C37 100 nF; 10 %; 63 V BFC237011104 Vishay

C38 47 nF; 5 %; 63 V MKS2-.047/63/5 WIMA

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C39 22 nF; 5 %; 63 V MKS2C022201A00JSSD WIMA

C40 10 nF; 5 %; 63 V MKS2-.01/63/5 WIMA

C41 47 nF; 5 %; 63 V MKS2-.047/63/5 WIMA

C42 100 nF; 10 %; 63 V BFC237011104 Vishay

C43 22 F; 20 %; 16 V 16ML22MEFC4X7 Rubycon

C44 1002 F; 20 %; 50 V EEU-FM1H101 Panasonic

D1 1N5062; 800 V; 2 A 1N5062-TR Vishay

D2 1N5062; 800 V; 2 A 1N5062-TR Vishay

D3 1N5062; 800 V; 2 A 1N5062-TR Vishay

D4 UF4006 UF4006-E3/73 Vishay

D5 1N5062; 800 V; 2 A 1N5062-TR Vishay

D6 1N5062; 800 V; 2 A 1N5062-TR Vishay

D7 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D8 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D9 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D10 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D11 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D12 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D13 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D14 1N4744A 1N4744A Vishay

D15 BZX79-C3V3 BZX79-C3V3.133 NXP Semiconductors

D16 1N4744A 1N4744A Vishay

D17 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D18 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D19 1N5244B 1N5244B Fairchild

D20 1N4937; 600 V; 1 A 1N4937-E3/54 Vishay

D21 BZX79-C12 BZX79-C12.133 NXP Semiconductors

D22 1N4937/54; 600 V; 1 A 1N4937-E3/54 Vishay

D23 1N4937/54; 600 V; 1A 1N4937-E3/54 Vishay

D24 BZX79-C3V3 BZX79-C3V3.133 NXP Semiconductors

D25 1N4937/54 600 V; 1 A 1N4937-E3/54 Vishay

F1 Fuse T1A 34.3117 SCHURTER

N1 PCB 7022-001-16112 Custom

Q1 6N60C FQPF6N60C Fairchild

Q2 2N60C FQPF2N60C Fairchild

Q3 2N60C FQPF2N60C Fairchild

Q4 2N3819 2N3819-E3 Vishay

Q5 BC547C BC547C Fairchild

Q6 BC557B BC557BZL1G On-Semi

Q7 BC557B BC557BZL1G On-Semi

Table 17. Bill of materials …continued

Part reference

Description/Value Part number Manufacturer

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Q8 BC547C BC547C Fairchild

R1 249 k; 1 %; 0.6 W MRS25000C2493FCT00 Vishay

R2 249 k; 1 %; 0.6 W MRS25000C2493FCT00 Vishay

R3 249 k; 1 %; 0.6 W MRS25000C2493FCT00 Vishay

R4 249 k; 1 %; 0.6 W MRS25000C2493FCT00 Vishay

R5 11 k; 1 %; 0.6 W MRS25000C1102FCT00 Vishay

R6 165 k; 1 %; 0.6 W MRS25000C1653FCT00 Vishay

R7 4.7 k; 5 %; 2 W PR02000204701JR500 Vishay

R8 23.7 k; 1 %; 0.6 W MRS25000C2372FCT00 Vishay

R9 165 k; 1 %; 0.6 W MRS25000C1653FCT00 Vishay

R10 5.1 k; 1 %; 0.6 W MRS25000C5101FCT00 Vishay

R11 205 k; 1 %; 0.6 W MRS25000C2053FCT00 Vishay

R12 1.33 ; 5 %; 1 W PR01000101008JR500 Vishay

R13 1 ; 5 %; 1 W MRS25000C1338FCT00 Vishay

R14 10 k; 1 %; 0.6 W MRS25000C1002FCT00 Vishay

R15 10 M; 1 %; 0.6 W MRS25000C1005FRP00 Vishay

R16 562 k; 1 %; 0.6 W MRS25000C5623FCT00 Vishay

R17 562 k; 1 %; 0.6 W MRS25000C5623FCT00 Vishay

R18 1 ; 5 %; 1 W PR01000101008JR500 Vishay

R19 1 k; 1 %; 0.6 W MRS25000C1001FCT00 Vishay

R20 220 k; 1 %; 0.6 W MRS25000C2203FCT00 Vishay

R21 27 k; 1 %; 0.6 W MRS25000C2702FCT00 Vishay

R22 237 k; 1 %; 0.6 W MRS25000C2373FCT00 Vishay

R23 1 ; 5 %; 1 W PR01000101008JR500 Vishay

R24 237 k; 1 %; 0.6 W MRS25000C2373FCT00 Vishay

R25 10 k; 1 %; 0.6 W MRS25000C1002FCT00 Vishay

R26 6.19 ; 1 %; 0.6 W MRS25000C6198FCT00 Vishay

R27 23.7 ; 1 %; 0.6 W MRS25000C2379FCT00 Vishay

R28 1 ; 1 %; 0.6 W MRS25000C1008FCT00 Vishay

R29 75 k; 1 %; 0.6 W MRS25000C7502FCT00 Vishay

R30 10 ; 1 %; 0.6 W MRS25000C1009FCT00 Vishay

R31 1 k; 1 %; 0.6 W MRS25000C1001FCT00 Vishay

R32 20 ; 10 %; 0.5 W 3329H-1-200LF Bourns

R33 33 ; 1 %; 0.6 W MRS25000C3309FCT00 Vishay

R34 47 k; 1 %; 0.6 W MRS25000C4702FCT00 Vishay

R35 33 ; 1 %; 0.6 W MRS25000C3309FCT00 Vishay

R36 10 k; 1 %; 0.6 W MRS25000C1002FCT00 Vishay

R37 150 k; 1 %; 0.6 W MRS25000C1503FCT00 Vishay

R38 187 k; 1 %; 0.6 W MRS25000C1873FCT00 Vishay

R39 4.7 ; 1 %; 0.6 W MRS25000C4708FCT00 Vishay

Table 17. Bill of materials …continued

Part reference

Description/Value Part number Manufacturer

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R40 100 k; 1 %; 0.6 W MRS25000C1003FCT00 Vishay

R41 562 k; 1 %; 0.6 W MRS25000C5623FCT00 Vishay

R42 562 k; 1 %; 0.6 W MRS25000C5623FCT00 Vishay

R43 47 k; 1 %; 0.6 W MRS25000C4702FCT00 Vishay

R44 3.48 k; 1 %; 0.6 W MRS25000C3481FCT00 Vishay

R45 2.5 k; 20 %; 0.15 W 262UR252B CTS

R46 2.4 k; 1 %; 0.6 W MRS25000C2401FCT00 Vishay

R47 750 k; 1 %; 0.6 W MRS25000C7503FCT00 Vishay

R48 3.3 k; 1 %; 0.6 W MRS25000C3301FCT00 Vishay

R49 4.99 k; 1 %; 0.6 W MRS25000C4991FCT00 Vishay

R50 1 k; 1 %; 0.6 W MRS25000C1001FCT00 Vishay

R51 10 M; 1 %; 0.6 W MRS25000C1005FRP00 Vishay

R52 5.6 k; 1 %; 0.6 W MRS25000C5601FCT00 Vishay

R53 261 k; 1 %; 0.6 W MRS25000C2613FCT00 Vishay

R54 1 M; 1 %; 0.6 W MRS25000C1004FCT00 Vishay

R55 2.2 M; 1 %; 0.6 W MRS25000C2204FCT00 Vishay

R56 4.99 k; 1 %; 0.6 W MRS25000C4991FCT00 Vishay

R57 1 k; 1 %; 0.6 W MRS25000C1001FCT00 Vishay

R58 100 ; 1 %; 0.6 W MRS25000C1000FCT00 Vishay

R59 2.2 M; 1 %; 0.6 W MRS25000C2204FCT00 Vishay

R60 33 k; 1 %; 0.6 W MRS25000C3302FCT00 Vishay

R61 33 k; 1 %; 0.6 W MRS25000C3302FCT00 Vishay

R62 1 k; 1 %; 0.6 W MRS25000C1001FCT00 Vishay

R63 4.7 k; 1 %; 0.6 W MRS25000C4701FCT00 Vishay

R64 390 k; 1 %; 0.6 W MRS25000C3903FCT00 Vishay

R66 100 ; 1 %; 0.6 W MRS25000C1000FCT00 Vishay

R67 47 k; 1 %; 0.6 W MRS25000C4702FCT00 Vishay

R68 1 k; 1 %; 0.6 W MRS25000C1001FCT00 Vishay

R69 41.2 k; 1 %; 0.6 W MRS25000C4122FCT00 Vishay

R70 33 k; 1 %; 0.6 W MRS25000C3302FCT00 Vishay

R71 10 k; 1 %; 0.6 W MRS25000C1002FCT00 Vishay

R72 470 k; 1 %; 0.6 W MRS25000C4703FCT00 Vishay

R73 53.6 k; 1 %; 0.6 W MRS25000C5362FCT00 Vishay

R74 500 k; 20 %; 0.15 W 262UR504B CTS

R75 47 k; 1 %; 0.6 W MRS25000C4702FCT00 Vishay

RT1 150 ; 25 %; 0.2 A; +85 °C PTGL05AR151H8P52B0 Murata

SW1 switch PTS645SL95LFS C&K Components

T1 transformer 760800001 Würth Elektronik

T2 transformer 750312352 Würth Elektronik

T3 transformer 750312407 Würth Elektronik

Table 17. Bill of materials …continued

Part reference

Description/Value Part number Manufacturer

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T4 transformer 750311081 Würth Elektronik

U1 TLVH431BQLPR TLVH431BQLPR Texas Instruments

U2 TLVH431BQLPR TLVH431BQLPR Texas Instruments

U3 UBA2015AP UBA2015AP NXP Semiconductors

V1 275 V (AC); 3.5 kA; 710 V V10E275P Littelfuse

X2 PCB screw terminal MKDSN2.5/4-5.08 Phoenix Contact

X3 PCB screw terminal MKDSN2.5/3-5.08 Phoenix Contact

X5 PCB screw terminal MKDSN2.5/4-5.08 Phoenix Contact

X6 PCB screw terminal MKDSN2.5/4-5.08 Phoenix Contact

X7 PCB screw terminal MKDSN2.5/2-5.08 Phoenix Contact

X8 PCB screw terminal MKDSN2.5/4-5.08 Phoenix Contact

Table 17. Bill of materials …continued

Part reference

Description/Value Part number Manufacturer

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8. Inductor appearance and dimensions

8.1 PFC transformer

Wurth Electronics Midcom Inc., part number: 750312407

Fig 18. PFC transformer appearance and dimensions

Table 18. PFC transformer electrical specifications

Parameter Value

Inductance (2-5) 1.1 mH

Saturation current (2-5) 2.7 A

Turns ratio (2-5) : (11-9) 60

Leakage inductance 465 H

Dielectric rating (5-9) 1.5 kV (AC)

DC resistance (2-5) 1.35

DC resistance (9-11) 0.11

Operating temperature 40 C to +125 C

aaa-000367

19.80

5

recommendedp.c. pattern, component side

1.32 Ø

dimensions in mm

lot code and date code

29.84 max

part must insert fully tosurface A in recommendedgrid 0.64 sq

term numbersfor reference only

11

9

2

5AUXPRI

27.05 max22.60 max2.54 min

750312407

dot locates term. #1

1

23

45

6

12

1110

98

7

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8.2 Half-bridge inductor

Wurth Electronics Midcom Inc., part number: 750312352

Fig 19. Half-bridge inductor appearance and dimensions

Table 19. Half-bridge inductor electrical specifications

Parameter Value

Inductance (2-5) 3.5 mH

Saturation current (2-5) 2 A

DC resistance (2-5) 2.15

Operating temperature 40 C to +125 C

aaa-000368

19.80

5

recommendedp.c. pattern, component side

1.32 Ø

dimensions in mm

lot code and date code

30.35 max

part must insert fully tosurface A in recommendedgrid 0.64 sq

term numbersfor reference only

5

2wind

27.05 max22.60 max2.54 min

750312352

dot locates term. #1

1

23

45

6

12

1110

98

7

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8.3 Heater transformer

Wurth Electronics Midcom Inc., part number: 760800001

Fig 20. Heater transformer appearance and dimensions

Table 20. Heater transformer electrical specifications

Parameter Value

Inductance (1-2) 127 H

Inductance (3-4) and (8-6) 4.1 H

Saturation current (1-2) 2.5 A

Rated current (1-2) 0.7 A

Dielectric rating (5-9) 2 kV (AC)

DC resistance (1-2) 0.30

DC resistance (3-4) and (8-6) 0.11

Operating temperature 40 C to +125 C

10.16

dimensions in mm

18.5 max

15 max

15.75 max

1.1 Ø

3.81

aaa-000369

1

2

3

4

8

7

6

5

term numbersfor reference only

8 5

1 4

1

2 8

6

3

4N2

N3N1

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8.4 Dim transformer

Wurth Electronics Midcom Inc., part number: 750311081

Fig 21. Heater transformer appearance and dimensions

Table 21. Dim transformer electrical specifications

Parameter Value

Inductance (1-2) and (6-4) 10 mH

Turns ratio (1-2) : (6-4) 1

Leakage inductance 10 H

Dielectric rating (5-9) 1.5 kV (AC)

DC resistance (1-2) 2.30

DC resistance (6-4) 2.70

Operating temperature 40 C to +125 C

aaa-000370

4.98

recommendedp.c. pattern, component side

2.49

1.09 Ø

dimensions in mm

10.16 max

1

2

6

41:1

8.26 max

3110

81W

E-M

IDC

OM

9.78 max

lot code and date code

3

1

2

4

6

5

2.79/3.30 (1)

(1) dimension may be exceeded with solder only

dot locates term. #1notch locates term. #1-3 side

part must insert fully tosurface A in recommendedgrid 0.16 sq

term numbersfor reference only

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9. Abbreviations

Table 22. Abbreviations

Acronym Description

CMP Capacitive Mode Protection

EMC ElectroMagnetic Compatibility

EMI ElectroMagnetic Interference

HBC Half-Bridge resonant Converter

MOSFET Metal-Oxide Semiconductor Field-Effect Transistor

OCP OverCurrent Protection

OPP OverPower Protection

OVP OverVoltage Protection

OLP Open-Loop Protection

PCB Printed-Circuit Board

PFC Power Factor Correction

RMS Root Mean Square

SoS Sum of Squares

ZVS Zero Voltage Switching

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10. Legal information

10.1 Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

10.2 Disclaimers

Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.

Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer.

In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages.

Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose.

10.3 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

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11. Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Safety warning . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Specification. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

4 Performance data. . . . . . . . . . . . . . . . . . . . . . . . 64.1 Power factor, THD and input power . . . . . . . . . 64.2 Dimming curve . . . . . . . . . . . . . . . . . . . . . . . . . 64.3 Sum of Squares (SoS) curve . . . . . . . . . . . . . . 74.4 ElectroMagnetic Interference (EMI)

emission tests . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Board Information . . . . . . . . . . . . . . . . . . . . . . . 95.1 Dimming without using an external voltage

source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95.2 Half-bridge operating principle . . . . . . . . . . . . . 95.3 Schematic diagrams . . . . . . . . . . . . . . . . . . . . 125.4 Functional description. . . . . . . . . . . . . . . . . . . 175.4.1 Start-up current, relamp and antistriation . . . . 175.5 Evaluation board features. . . . . . . . . . . . . . . . 175.5.1 Default jumper settings. . . . . . . . . . . . . . . . . . 175.5.2 Supporting other IC versions . . . . . . . . . . . . . 185.5.2.1 UBA2015P . . . . . . . . . . . . . . . . . . . . . . . . . . . 195.5.2.2 UBA2016AP . . . . . . . . . . . . . . . . . . . . . . . . . . 195.5.3 Evaluation features and alternative jumper

settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195.5.3.1 PFC overcurrent adjustment. . . . . . . . . . . . . . 195.5.3.2 External supply for the half-bridge circuit with

PFC disabled . . . . . . . . . . . . . . . . . . . . . . . . . 195.5.3.3 Bus voltage adjustment with PFC enabled . . . 195.5.3.4 Half-bridge frequency control loop options . . . 205.5.3.5 Lamp current sense . . . . . . . . . . . . . . . . . . . . 205.5.3.6 Half-bridge current sense resistor. . . . . . . . . . 215.5.3.7 Preheat frequency adjustment . . . . . . . . . . . . 215.5.3.8 Enable disable function . . . . . . . . . . . . . . . . . 225.5.3.9 PFC THD waveshaper circuit disable . . . . . . . 225.5.3.10 Boost mode . . . . . . . . . . . . . . . . . . . . . . . . . . 225.5.4 Half-bridge operating frequency . . . . . . . . . . . 225.5.5 Preheat timer and slow fault timer capacitor

bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235.5.5.1 EOL protection disable . . . . . . . . . . . . . . . . . . 245.5.5.2 Minimum dim level adjustment . . . . . . . . . . . . 24

6 Board layouts . . . . . . . . . . . . . . . . . . . . . . . . . . 25

7 Bill of materials . . . . . . . . . . . . . . . . . . . . . . . . 27

8 Inductor appearance and dimensions . . . . . . 328.1 PFC transformer . . . . . . . . . . . . . . . . . . . . . . . 328.2 Half-bridge inductor . . . . . . . . . . . . . . . . . . . . 338.3 Heater transformer . . . . . . . . . . . . . . . . . . . . . 348.4 Dim transformer . . . . . . . . . . . . . . . . . . . . . . . 35

9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 36

10 Legal information . . . . . . . . . . . . . . . . . . . . . . 3710.1 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 3710.2 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 3710.3 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 37

11 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

© NXP B.V. 2012. All rights reserved.

For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

Date of release: 9 March 2012

Document identifier: UM10438

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.