A/Prof. C. Tripon-Canseliet UPMC - Université Pierre et Marie Curie – Electronics and Electromagnetism Lab (L2E) - France In cooperation with THALES Airborne Systems - France IEMN- Electronics , Micro and Nanotechnologies Institute – France Nanyang Technological University/CINTRA – Singapore Ultrafast sensors For the Future
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Ultrafast sensors For the Future - TTI/Vanguard · Ultrafast sensors for the Future C. Tripon-Canseliet 3 Identified efficient RF functunalities for industrial applications: State-of-the-Art
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A/Prof. C. Tripon-CanselietUPMC - Université Pierre et Marie Curie – Electronics and Electromagnetism Lab (L2E) - France
In cooperation withTHALES Airborne Systems - France IEMN- Electronics , Micro and Nanotechnologies Institute – FranceNanyang Technological University/CINTRA – Singapore
Ultrafast sensorsFor the Future
Ultrafast sensors for the Future
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Optics metrology for electronics: specific needs for industrial applicationso Electronics technological bottleneck: high frequency activation and functionality
– Electronics/Electronics: DC to microwave domain– Optics/Optics: Terahertz domain– Optics/Electronics: Microwave to sub-mm range
o Optics for classical electronic clock jitter limitations overcoming– Optical laser sources: highest resolution for electronic systems– Semiconductor technological procees: Integration access
o Optics for ultra short pulse bandwith generation– Femtosecond risetime– Speed of light – Few tens to hundred fs time bandwidth: Highest external control frequency
Demonstration of optics in RF electronic systems: Active research fieldo Ligth/matter interactionso Integration of optics for microwave fucntionalitieso Nanotechnologies for improvment
Identified efficient RF functunalities for industrial applications: State-of-the-Art in microwave photonics All optical signal processing Beam scanning of antennas arrays (True Time Delays) Very low noise generation (by signal injection) Radio over Fiber (RoF) systems (high data rates > 100 Gbits/s)
Technological support for systems integrationBuilding blocks Sources (Lasers, LEDs) Receivers (Photodiodes, photo transistors) RF information transport on optical carriers (AM/PM/FM) Information support (Optical waveguides)
Physical limitations scanning: Why not Nanoscale?o Confinement of light/matter interactions with diffraction effectso Nanotechnology platform access
Ligth/Matter interactions inventory: How we can play with light…. Light emission (Photoluminescence, Electroluminescence) Light Absorption Light scattering
Carriers dynamics (Mobiliies, lifetimes)Dark resisitivityCarriers transport (balisitc regime)Integration with MMIC planar technology(Process or deposition methods eligibility)
Nano electromagnetism under infinite boundaries(Limitations of classical electromagnetics)Feasibilty of transmission of RF signals in nano accessInterconnections
Limitations under finite boundariesArrays functionalities – DensificationNanoscale coupling effects
S. Faci, C. Tripon-Canseliet, A. Benlarbi-Delaï, G. Alquié, S. Formont, , J. Chazelas“Optical generation of microwave signal for FMCW radar applications”, Microwave and optical Technology Letters, Vol 51, Issue3, pp.690-693, March 2009
S. Faci, C. Tripon-Canseliet, G. Alquié, S. Formont, , J. Chazelas“Ook modulator using photoconductive feedback oscillator”Microwave and optical Technology Letters, Vol 52, Issue 9, pp.2010-2016, Sept 2010
Photoconductive effect for 5 GHz carrier generation Ultrafast pulse illumination: Real-time control of microwave carrier generation by optics
S. Faci, C. Tripon-Canseliet, A. Benlarbi-Delaï, G. Alquié, S. Formont, , J. Chazelas“Optical generation of microwave signal for FMCW radar applications”, Microwave and optical Technology Letters, Vol 51, Issue3, pp.690-693, March 2009
S. Faci, C. Tripon-Canseliet, G. Alquié, S. Formont, , J. Chazelas“Ook modulator using photoconductive feedback oscillator”Microwave and optical Technology Letters, Vol 52, Issue 9, pp.2010-2016, Sept 2010
ON/OFF ratio enhancement under CW illumination: Confinement intensification Membrane material RF circuit mismatching (at OFF state)
TechnologyOn/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
Standard 1.45 0.45 0.04
Membrane 4.24 3.18 2.94
C. Tripon-Canseliet, S. Faci, K. Blary, G. Alquié, S. Formont, J. ChazelasSPIE International Conference on Application of photonic Technology, Quebec, Canada, June 2006
Interaction volume: 20x20x2 µm3
TechnologyOn/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
RF confined 14.4 10.5 6.5
RF Confined 35.1 19.0 17.3
Interaction volume: 1x1x0.5 µm3
Carriers density increase Capacitive behaviour lowering Optimization of RF access design
DGA contract n° 07.34.014 (2007-2010)Partners: IEMN and THALES Airborne Systems
Nanotechnology-based MPCS @ 1.55µm: Quaternary semiconducting material bukmaterial Study of photoconductivity of quaternary semiconductors (GaAsSbN) Design and tests of optically-controlled microwave switches
Experimental magnitude ON/OFF ratio @ 1.55 µm in frequency
2008 MERLION program (French Embassy) grantGaAsSbN process for optoelectronicsPartnership: IEMN-UPMC- NTU
K.H. Tan, C. Tripon-Canseliet, S. Faci, A.Pagies, M. Zegaoui, W. K.Loke, S. Wicaksono, S. F. Yoon, V. Magnin, D. Decoster, and J. Chazelas,IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 22, NO. 15, AUGUST 1, 2010
K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, and J. Chazelas, APPLIED PHYSICS LETTERS 93, 063509 2008
Nanotechnology-based MPCS @ 1.55µm: CNT-based technology Modeling and characterization of RF behaviour of MW or metallic SW CNTs Study of photoconductivity of semiconducting SW CNTs under polarized Design and test of CNT-based RF nano emitters Design and tests of optically-controlled microwave phase shifters
2010 DGA/DSTA joined program grantNano antennasPartnership: IEMN-UPMC – THALES - NTU
Microwave phase shifting by optics
A. Maiti, Caron Nanotubes: Band gap engineering with strain, Nature Materials 2 (2003) 440
J. Guo, M. A. Alam, Y. Yoon, Appl. Phys. Lett. 88, 133111 (2006).
SEM photograph of vertical MW CNT processed by PECVD @ NTU
CNT
Examples of RF reflective (a) and filtering (b) structures for CNT RF propertiesextraction
Research work focus (since 2007): Nanotechnology-based emitting system @ 1.55µm Study of photoconductice of SW CNT-based FET with transparent electrodes (ITO) Design and tests of optically-controlled microwave amplifier with reported matching circuit in
Collaboratorso G. Alquié (L2E)o D. Decoster (IEMN) - Professoro J. Chazelas (THALES) – Technical Directoro K.L. Pey (NTU previously - now @SUTD) - Professoro Yoon S.F. - Tay B. K (NTU/EEE school) - Professorso D. Baillargeat (CINTRA) - Professor
PhD students and Post Docs o S. Faci – K. Louertani - N. Guldner – B. Guillot (L2E)o N. Saassaoud / M. Zegaoui / A. Pagies/ (IEMN)o A. Olivier (CINTRA/IEMN)o Teo E. – Tan D.
Résistivité/conductivité, résistance de contact avec différents métaux Propriétés électroniques
Transport / Dynamique des électrons (mobilités, vitesse de transit, temps de vie) Propriétés optiques
Structure de bande / Sensibilité en longueur d’onde (Bande spectrale d’absorption) Propriétés thermiques Propriétés mécaniques Techniques de fabrication
Nano objets: vers des propriétés surprenantes
Propriétés des CNTs compoarées aux matériaux semiconducteurs connus
P. Avouris, M. Radosavljevic, S. J. Wind, CNT electronics andoptoelectronics, NanoScience and Technology, Applied Physics ofCarbon Nanotubes, Fundamentals of Theory, ISBN 978-3-540-23110-3
Résisitivté de nanofils d’InN – Résistivité avec et sans résistance de contact (Méthode à 4 pointes en noir)
F. Werner, F. Limbach, M. Carsten, C. Denker, J.Malindretos, A. Rizzi,Nano Lett., Vol. 9, No. 4, 2009
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Nanofils: Méthodes de fabrication pour composants électroniques et optoélectroniques Structures homogènes Jonctions PN Transistors
Y. Li, F. Qian, J. Xiang, and C. M. LieberMaterialsToday, Oct. 2006, 9, 10
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Exemple de nanofils d’InP Caractérisation optique: Electroluminescence
Nano objets: Propriétés optoélectroniques
X. Duan, Y. Huang*², Y.Cui, J.Wang*& C.M. Lieber, Nature, 409, Jan 2001, p.66-68
5 µm p-n junction
Diam: 65 et 68 nm
5 µm
Diam: 39 et 49 nm
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Exemple de nanofils de Si Caractérisation optique : photoluminescence
Nano objets: Propriétés optoélectroniques
M.-H. Kim , T.-E. Park, U.-K. Kim, H.-J. Choi, G.-Y. Sung, J.- H. Shin, K. Suh2007 4th IEEE International Conference on group IV Photonics, Page(s): 1 - 3
Th Stelzner, M Pietsch, G Andra, F Falk, E Ose and S Christiansen
Nanotechnology 19 (2008) 295203
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Nanofils hétérostructurés (GaAs/GaP) Caractérisation statique I(V) et optique (électroluminescence)
Nano objets: Propriétés optoélectroniques
Gudiksen, M., et al.,
Nature (2002) 415, 617
Wu, Y., et al.,
Nature (2004) 430, 61
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Nanofils hétérostructurés (GaN/InGaN/GaN/AlGaN/GaN) Caractérisation statique I(V) et optique (électroluminescence)
Nano objets: Propriétés optoélectroniques
Qian, F., et al., Nano Lett. (2005) 5, 2287
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Nanotubes de Carbone Propriétés optoélectroniques
Jonctions PN: Electroluminescence
Nano objets: Propriétés optoélectroniques
Chen, J., et al., Science (2005) 310, 1171
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Nanotubes de Carbone Représentation par un enroulement d’une feuille de graphène (arrangement 2D
d’atomes de Carbone) Nature métallique ou semiconductrice déterminée par
Diamètre Type d’enroulement (mono/multi paroi) Chiralité
Propriétés électroniques Mobilités Résistivité
Nano objets: Propriétés optoélectroniques
Fig.2: Pictorial representation of (A) graphene sheet and (B) rolled carbon nanotube lattice structures (the
latter shows a (16,0) tube). Fig. 3: CNT energy gap and intrinsic doping ni
as a function of tube radius
C Cgap
CNT
t aE
d−⋅
= (1)
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Nanotubes de Carbone Propriétés optoélectroniques
Photoconductivité: Dépendance en polarisation
Nano objets: Propriétés optoélectroniques
X. Qiu, M. Freitag, V. Perebeinos, P. AvourisNano Lett. 5, 749 (2005).
J. Guo, M. A. Alam, Y. Yoon, Appl. Phys. Lett. 88, 133111 (2006).
Composants pour applications RF Utilisation des propriétés optiques
Nano dispositifs intégrés à contrôle optique
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Commande optique CW: Commutation d’amplitude Recherche du confinement de l’interaction Augmentation de la densité de porteurs Diminution du comportement capacitif RF du dispositif
Premiers travaux effectués au L2E (2006) Structure membrane Augmentation de l’impédance des lignes d’accès: Réduction de la zone d’interaction
Dispositifs intégrés RF à contrôle optique
TechnologyOn/Off ratio magnitude [dB]
@ 10 GHz @ 20 GHZ @ 40 GHz
Standard 1.45 0.45 0.04
Membrane 4.24 3.18 2.94
C. Tripon-Canseliet, S. Faci, K. Blary, G. Alquié, S. Formont, J. ChazelasSPIE International Conference on Application of photonic Technology, Quebec, Canada, Juin 2006
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Commande optique CW: Commutation d’amplitudeRecherche du confinement de l’interaction lumière/matière pour la commutation d’amplitude par l’optique Réduction de la zone d’éclairement