C(2, TAB) E(3) NG1E3C2T G(1) Features • Maximum junction temperature : T J = 175 °C • Low V CE(sat) = 1.55 V(typ.) @ I C = 40 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive V CE(sat) temperature coefficient Applications • Welding • Power factor correction Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V CE(sat) behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA40HP65FB2 Product summary Order code STGWA40HP65FB2 Marking G40HP65FB2 Package TO-247 long leads Packing Tube Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package STGWA40HP65FB2 Datasheet DS12538 - Rev 3.0 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com
16
Embed
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series ... · The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
C(2, TAB)
E(3)NG1E3C2T
G(1)
Features• Maximum junction temperature : TJ = 175 °C• Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A• Co-packaged protection diode• Minimized tail current• Tight parameter distribution• Low thermal resistance• Positive VCE(sat) temperature coefficient
Applications• Welding• Power factor correction
DescriptionThe newest IGBT 650 V HB2 series represents an evolution of the advancedproprietary trench gate field-stop structure. The performance of the HB2 series isoptimized in terms of conduction, thanks to a better VCE(sat) behavior at low currentvalues, as well as in terms of reduced switching energy. A diode used for protectionpurposes only is co-packaged in antiparallel with the IGBT. The result is a productspecifically designed to maximize efficiency for a wide range of fast applications.
Product status link
STGWA40HP65FB2
Product summary
Order code STGWA40HP65FB2
Marking G40HP65FB2
Package TO-247 long leads
Packing Tube
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
STGWA40HP65FB2
Datasheet
DS12538 - Rev 3.0 - July 2019For further information contact your local STMicroelectronics sales office.
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 5 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 29. Diode reverse recoverywaveform)
- 140 - ns
Qrr Reverse recovery charge - 21 - nC
Irrm Reverse recovery current - 6.6 - A
dIrr/dt Peak rate of fall of reverserecovery current during tb
- 430 - A/µs
Err Reverse recovery energy - 1.6 - µJ
trr Reverse recovery timeIF = 5 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 29. Diode reverse recoverywaveform)
- 200 - ns
Qrr Reverse recovery charge - 47.3 - nC
Irrm Reverse recovery current - 9.6 - A
dIrr/dt Peak rate of fall of reverserecovery current during tb
- 428 - A/µs
Err Reverse recovery energy - 3.2 - µJ
STGWA40HP65FB2Electrical characteristics
DS12538 - Rev 3.0 page 4/16
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
IGBT180420181011PDT
200
150
100
50
025 75 125 175
PTOT (W)
TC (°C)
TJ ≤ 175 °C
Figure 2. Collector current vs case temperature
IGBT180420181012CCT
60
40
20
025 75 125 175
IC (A)
TC (°C)
VGE ≥ 15 V, TJ ≤ 175 °C
Figure 3. Output characteristics (TJ = 25 °C)
GADG090420181401OCH
100
80
60
40
20
00 1 2 3 4 5
IC (A)
VCE (V)VGE = 7 V
VGE = 9 V
VGE = 11 VVGE = 13 V
VGE = 15 V
Figure 4. Output characteristics (TJ = 175 °C)
GADG090420181401175OCH
100
80
60
40
20
00 1 2 3 4 5
IC (A)
VCE (V)
VGE = 7 V
VGE = 9 V
VGE = 11 V
VGE = 13 V
VGE = 15 V
Figure 5. VCE(sat) vs junction temperature
IGBT090420181402VCET
2.3
1.9
1.5
1.1-50 0 50 100 150
VCE(sat) (V)
TJ (°C)
IC = 20 A
IC = 40 A
IC = 80 AVGE = 15 V
Figure 6. VCE(sat) vs collector current
IGBT180420181013VCEC
3.0
2.6
2.2
1.8
1.4
1.0
0.60 20 40 60 80 100
VCE(sat) (V)
IC (A)
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
TJ = -40 °C
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 5/16
Figure 7. Forward bias safe operating area
GADG090420181402SOA
102
101
100
100 101 102 VCE (V)
tp = 1 µs
tp = 10 µs
tp = 100 µs
tp = 1 ms
Single pulse, TC = 25 °C,TJ ≤ 175 °C, VGE = 15 V
IC(A)
Figure 8. Transfer characteristics
GADG180420181014TCH
100
80
60
40
20
05 6 7 8 9 10
IC (A)
VGE (V)
VCE = 6 V
TJ = 175 °CTJ = 25 °C
Figure 9. Diode VF vs forward current
IGBT090420181403DVF
2.4
1.6
0.8
0.00 2 4 6 8
VF (V)
IF (A)
TJ = 25 °C
TJ = -40 °C
TJ = 175 °C
Figure 10. Normalized VGE(th) vs junction temperature
IGBT090420181403NVGE
1.1
1.0
0.9
0.8
0.7
0.6-50 0 50 100 150
VGE(th) (norm.)
TJ (°C)
VCE = VGE
IC = 1 mA
Figure 11. Normalized V(BR)CES vs junction temperature
IGBT090420181404NVBR
1.08
1.04
1.00
0.96
0.92-50 0 50 100 150
V(BR)CES (norm.)
TJ (°C)
IC = 1 mA
Figure 12. Capacitance variations
GADG090420181404CVR
10 3
10 2
10 1
10 -1 10 0 10 1 10 2
C (pF)
VCE (V)
Cies
Coes
Cres
f = 1 MHz
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 6/16
Figure 13. Gate charge vs gate-emitter voltage
GADG090420181404QVG
15
12
9
6
3
00 30 60 90 120 150
VGE (V)
Qg (nC)
VCC = 520 V, IC = 40 A, IG = 1 mA
Figure 14. Switching energy vs collector current
IGBT090420181405SLC
1.6
1.2
0.8
0.4
0.00 20 40 60 80
E(mJ)
IC (A)
Eoff
VCC = 400 V, RG = 4.7 Ω, VGE = 15 V, TJ = 175 °C
Figure 15. Switching energy vs temperature
IGBT090420181405SLT
0.8
0.7
0.6
0.5
0.4
0.30 50 100 150
E (mJ)
Eoff
VCC = 400 V, IC = 40 A, RG = 4.7 Ω, VGE = 15 V
TJ (°C)
Figure 16. Switching energy vs collector emitter voltage
IGBT090420181405SLV
1.0
0.8
0.6
0.4150 250 350 450
E (mJ)
VCE (V)
Eoff
IC = 40 A, RG = 4.7 Ω, VGE = 15 V, TJ = 175 °C
Figure 17. Switching energy vs gate resistance
IGBT090420181405SLG
1.2
1.1
1.0
0.9
0.8
0.70 10 20 30 40
E (mJ)
RG (Ω)
EOFF
IC = 40 A, VCC = 400 V,VGE = 15 V, TJ = 175 °C
Figure 18. Switching times vs collector current
IGBT180420181314STC
10 2
10 1 0 20 40 60 80
t (ns)
IC (A)
td(off)
VCC = 400 V, VGE = 15 V, RG = 4.7 Ω, TJ = 175 °C
tf
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 7/16
Figure 19. Switching times vs gate resistance
IGBT090420181406SLG
10 2
10 1 0 10 20 30 40 RG (Ω)
t (ns)
td(off)
tr
VCC = 400 V, VGE = 15 V, IC = 40 A, TJ = 175 °C
Figure 20. Reverse recovery current vs diode currentslope
IGBT120120160800RRC
12
10
8
6
4
2
00 300 600 900 1200
Irrm(A)
di/dt (A/µs)
VCC =400 V, VGE = 15 V, IF = 5 A,TJ =175 °C
Figure 21. Reverse recovery time vs diode current slope
IGBT120120160820RRT
350
300
250
200
150
1000 300 600 900 1200
trr (ns) VCC = 400 V, VGE = 15 V,
IF = 5 A, TJ = 175 °C
di/dt (A/μs)
Figure 22. Reverse recovery charge vs diode currentslope
IGBT120120160824RRQ
50
48
46
44
420 300 600 900 1200
Qrr(µC)
di/dt (A/µs)
VCC = 400 V, VGE = 15 V, IF = 5 A,Tj = 175 °C
Figure 23. Reverse recovery energy vs diode current slope
IGBT120120160826RRE
5
4
3
20 300 600 900 1200
Err(μJ)
di/dt (A/µs)
VCC = 400 V, VGE = 15 V,IF = 5 A, Tj = 175 °C
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 8/16
Figure 24. Thermal impedance for IGBT
10 10 10 10 10 tp(s)-5 -4 -3 -2 -110-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
Figure 25. Thermal impedance for diode
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 9/16
3 Test circuits
Figure 26. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 27. Gate charge test circuit
GADG160420181048IG
RL
VCC
D.U.T.100 Ω IG = CONSTVi ≤ VGMAX
2200 μF
2.7 kΩ
PW1 kΩ
47 kΩ
Figure 28. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
Figure 29. Diode reverse recovery waveform
t
GADG180720171418SA
10%
VRRM
dv/dt
di/dt
IRRM
IF
trr
ts tf
Qrr
IRRM
STGWA40HP65FB2Test circuits
DS12538 - Rev 3.0 page 10/16
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.