Terminale STI Électronique Système technique : « Pousse Seringue » Page 1/2 TD transistor MOSFET G BERTHOME/F MANDIN TRAVAIL DEMANDÉ Soit le schéma structurel suivant : Le fonctionnement du relais bistable(RL1S, RL1R, RL1A :B, RL1B :B) est le suivant : -si aucun relais est commandé alors les interrupteurs RL1A :B et RL1B :B sont dans l’état de repos, -si le relais RL1 :S est commandé alors les interrupteurs RL1A :B et RL1B :B passent en position de travail, -si le relais RL1 :R est commandé alors les interrupteurs RL1A :B et RL1B :B reviennent en position repos. Question1 Quelle est la technologie et le type du transistor T 1 ? Quelle est la technologie et le type du transistor T 2 ? Question2 Décrire le fonctionnement des transistors T 1 et T 2 . Analyse qualitative : Question3 Remplir le tableau 1 du document réponse 1. Justifier tous les résultats. Question4 Remplir le tableau 2 du document réponse 1 (on considère que la Touche ON a été appuyée puis relâchée auparavant). Justifier tous les résultats. Question5 Remplir les chronogrammes du document réponse 2. Justifier tous les chronogrammes (on donne PB5=NL0). Question6 Déterminer la durée à partir de laquelle le système technique ne sera plus alimenté. Question7 Donner le rôle de D 4 .
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Terminale STI Électronique Système technique : « Pousse Seringue » Page 1/2
TD transistor MOSFET
G BERTHOME/F MANDIN
TRAVAIL DEMANDÉ
Soit le schéma structurel suivant :
Le fonctionnement du relais bistable(RL1S, RL1R, RL1A :B, RL1B :B) est le suivant : -si aucun relais est commandé alors les interrupteurs RL1A :B et RL1B :B sont dans l’état de repos, -si le relais RL1 :S est commandé alors les interrupteurs RL1A :B et RL1B :B passent en position de travail, -si le relais RL1 :R est commandé alors les interrupteurs RL1A :B et RL1B :B reviennent en position repos.
Question1 Quelle est la technologie et le type du transistor T1 ? Quelle est la technologie et le type du transistor T2 ?
Question2 Décrire le fonctionnement des transistors T1 et T2.
Analyse qualitative :
Question3 Remplir le tableau 1 du document réponse 1. Justifier tous les résultats.
Question4 Remplir le tableau 2 du document réponse 1 (on considère que la Touche ON a été
appuyée puis relâchée auparavant). Justifier tous les résultats.
Question5 Remplir les chronogrammes du document réponse 2. Justifier tous les chronogrammes (on donne PB5=NL0).
Question6 Déterminer la durée à partir de laquelle le système technique ne sera plus alimenté.
Question7 Donner le rôle de D4.
Terminale STI Électronique Système technique : « Pousse Seringue » Page 2/2
TD transistor MOSFET
G BERTHOME/F MANDIN
Document réponse 1
Tableau1
Touche ON Etat T1 Alim Moteur VCC Relâchée Appuyée
Tableau2
Touche OFF Etat T2 Alim Moteur VCC
Relâchée Appuyée
Document réponse 2
t(s)
t(s)
t(s)
Touche ON
Touche OFF
Etat D4
t(s)
Etat T1
t(s)
Etat T2
t(s)
Etat RL1 :S
t(s)
Etat RL1 :R
VGS(T1)
VGS(T2)
Alim moteur
VCC
t(s)
t(s)
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 21 Publication Order Number:
BS170/D
BS170Preferred Device
Small Signal MOSFET500 mAmps, 60 VoltsN–Channel TO–92
Figure 3. V GS(th) Normalized versus Temperature Figure 4. On–Region Characteristics
Figure 5. Output Characteristics Figure 6. Capacitance versusDrain–To–Source Voltage
VGS = 10 V
VGS = 0 V
Ciss
Coss
Crss
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
VDS = VGSID = 1.0 mA
VGS = 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
BS170
http://onsemi.com4
PACKAGE DIMENSIONS
STYLE 30:PIN 1. DRAIN
2. GATE3. SOURCE
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
GH
SECTION X–X
CV
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---1
TO–92CASE 29–11
ISSUE AL
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changeswithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury ordeath may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and holdSCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonableattorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
JAPAN : ON Semiconductor, Japan Customer Focus Center4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone : 81–3–5740–2700Email : [email protected]
ON Semiconductor Website : http://onsemi.com
For additional information, please contact your localSales Representative.
BS170/D
NORTH AMERICA Literature Fulfillment :Literature Distribution Center for ON SemiconductorP.O. Box 5163, Denver, Colorado 80217 USAPhone : 303–675–2175 or 800–344–3860 Toll Free USA/CanadaFax: 303–675–2176 or 800–344–3867 Toll Free USA/CanadaEmail : [email protected] Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support : 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European SupportGerman Phone : (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781*Available from Germany, France, Italy, UK, Ireland
BS250Vishay Semiconductorsformerly General Semiconductor
Document Number 88180 www.vishay.com10-May-02 1
DMOS Transistor (P-Channel)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage –VDSS 60 V
Drain-Gate Voltage –VDGS 60 V
Gate-Source-Voltage (pulsed) VGS ±20 V
Drain Current (continuous) –ID 250 mA
Power Dissipation at Tamb = 25°C Ptot 0.83(1) W
Thermal Resistance Junction to Ambient Air RθJA 150(1) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Range TS –65 to +150 °C
Note:(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Features• High input impedance• High-speed switching• No minority carrier storage time• CMOS logic compatible input• No thermal runaway• No secondary breakdown• On special request, this transistor is also
Note: Other options available for ST10 ultra high reliability, high temperature 85°C (185°F), ST1 reverse coil polarity, BS Britishstandard. Contact your OMRON sales representative for details.
Note: The rated current and coil resistance are measured at a coil temperature of 23°C (73°F) with a tolerance of ±10%.
COIL DATA
Standard non-latching DPDT (G6A-234P-ST-US, G6A-274P-ST-US)
Coil inductance
Rated Rated Coil (ref. value) (H) Pick-up Dropout Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Rated Rated Coil (ref. value) (H) Pick-up Dropout Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Rated Rated Coil (ref. value) (H) Pick-up Dropout Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Standard non-latching 4PDT (G6A-434P-ST-US, G6A-474P-ST-US)
Coil inductance
Rated Rated Coil (ref. value) (H) Pick-up Dropout Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Rated Rated Coil (ref. value) (H) Pick-up Dropout Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Rated Rated Coil (ref. value) (H) Pick-up Dropout Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Note: The rated current and coil resistance are measured at a coil temperature of 23°C (73°F) with a tolerance of ±10%.
COIL DATA (continued)
Standard single coil latching DPDT (G6AU-234P-ST-US, G6AU-274P-ST-US)
Coil inductance Set ResetRated Rated Coil (ref. value) (H) pick-up pick-up Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Standard dual coil latching DPDT (G6AK-234P-ST-US, G6AK-274P-ST-US)
Coil inductance (ref. value) (H) Set ResetRated Rated Coil Set coil Reset coil pick-up pick-up Maximum Powervoltage current resistance Armature Armature Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON OFF ON % of rated voltage (mW)
Coil inductance (ref. value) (H) Set ResetRated Rated Coil Set coil Reset coil pick-up pick-up Maximum Powervoltage current resistance Armature Armature Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON OFF ON % of rated voltage (mW)
Note: The rated current and coil resistance are measured at a coil temperature of 23°C (73°F) with a tolerance of ±10%.
COIL DATA (continued)
Standard single coil latching 4PDT (G6AU-434P-ST-US, G6AU-474P-ST-US)
Coil inductance Set ResetRated Rated Coil (ref. value) (H) pick-up pick-up Maximum Powervoltage current resistance Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON % of rated voltage (mW)
Standard dual coil latching 4PDT (G6AK-434P-ST-US, G6AK-474P-ST-US)
Coil inductance (ref. value) (H) Set ResetRated Rated Coil Set coil Reset coil pick-up pick-up Maximum Powervoltage current resistance Armature Armature Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON OFF ON % of rated voltage (mW)
Coil inductance (ref. value) (H) Set ResetRated Rated Coil Set coil Reset coil pick-up pick-up Maximum Powervoltage current resistance Armature Armature Armature Armature voltage voltage voltage consumption(VDC) (mA) (Ω) OFF ON OFF ON % of rated voltage (mW)
Service life (see note 4) Mechanical 100 million operations min. (at 36,000 operations/hour)
Electrical See “Characteristic Data”
Weight DPDT Approx. 3.5 g (0.12 oz)
4PDT Approx 6.0 g (0.21 oz)
Note: 1. Data shown are of initial value.2. The dielectric strength of Type G6A-2D34P-ST-US is 500 VAC when the relay is not energized.3. The surge withstand of Type G6A-2D34P-ST-US is 1,000 V 10 x 160 µs when the relay is not energized.4. The mechanical service life of Type G6A-2D34P-ST-US is 10,000,000 operations min.
CHARACTERISTICS
CHARACTERISTIC DATA
Maximum switching capacityDPDT
Ambient temperature vs.maximum voltage (reference only)
Note: and indicate mounting orientation marks.123451234512345
Type Contact form Coil rating Contact ratings
G6A-234P-ST-US DPDT 1 to 48 VDC 0.60 A, 125 VAC
G6A-234P-ST40-US 1 A, 30 VDC
G6A-234P-ST15-US 0.60 A, 110 V+DC
G6A-274P-ST-US 0.60 A, 125 VAC
G6A-274P-ST40-US 2 A, 30 VDC
G6A-274P-ST15-US 0.60 A, 110 VDC
G6A-434P-ST-US 4PDT 1 to 48 VDC 0.60 A, 125 VAC
G6A-434P-ST20-US 1 A, 30 VDC
G6A-434P-ST40-US 0.60 A, 110 VDC
G6A-474P-ST-US 0.60 A, 125 VAC
G6A-474P-ST20-US 2 A, 30 VDC
G6A-474P-ST40-US 0.60 A, 110 VDC
G6AK-234P-ST(40)-US DPDT 1 to 48 VDC 0.60 A, 125 VAC
G6AU-234P-ST-US 1 A, 30 VDC
0.60 A, 110 VDC
G6AK-274P-ST(40)-US 0.60 A, 125 VAC
G6AU-274P-ST-US 2 A, 30 VDC
0.60 A, 110 VDC
G6AK-434P-ST(40)-US 4PDT 1 to 48 VDC 0.60 A, 125 VAC
G6AU-434P-ST(40)-US 1 A, 30 VDC
0.60 A, 110 VDC
G6AK-474P-ST(40)-US 0.60 A, 125 VAC
G6AU-474P-ST(40)-US 2 A, 30 VDC
0.60 A, 110 VDC
APPROVALS
UL (File No. E41515)/CSA (File No. LR24825)
Note: 1. The rated values approved by each of the safety standards (e.g., UL and CSA) may be different from the performancecharacteristics individually defined in this catalog.
2. In the interest of product improvement, specifications are subject to change.
9
G6A G6A
OMRON ELECTRONICS, INC. OMRON CANADA, INC.One East Commerce Drive 885 Milner AvenueSchaumburg, IL 60173 Scarborough, Ontario M1B 5V81-800-55-OMRON 416-286-6465
Cat. No. GC RLY6 9/97 Specifications subject to change without notice. Printed in the U.S.A.