Top Banner
t-Contact Transistor – first transistor ever
60
Welcome message from author
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Page 1: TRANSISTORS

Point-Contact Transistor – first transistor ever made

Page 2: TRANSISTORS

“The Wonder child of electronics world”

By

AJAL.A.J ( ASSISTANT PROFESSOR)ECE DEPARTMENTMAIL: [email protected]: 8907305642

Page 3: TRANSISTORS

What is a transistor?A transistor is a 3 terminal electronic device

made of semiconductor material.Transistors have many uses, including

amplification, switching, voltage regulation, and the modulation of signals

Page 4: TRANSISTORS

This session will help you to understand the,

1.Evolution of transistor  2.Importance of transistor  3.Definition & transistor types  4.Transistor symbol & operation  5.Advantages of transistor

6.Latest in transistor technology

Page 5: TRANSISTORS

History of transistors In 1906, an American inventor and

physicist, Lee De Forest, made the vacuum tube triode or audion as he called it.

Used in radios Used in early computers

Page 6: TRANSISTORS

Picture shows the workbench of John Bardeen (Stocker Professor at OU) and Walter Brattain at Bell Laboratories. They were supposed to be doing fundamental research about crystal surfaces.

The experimental results hadn't been very good, though, and there's a rumor that their boss, William Shockley, came near to canceling the project.  But in 1947, working alone, they switched to using tremendously pure materials. 

It dawned on them that they could build the circuit in the picture. It was a working amplifier!  John and Walter submitted a patent for the first working point contact transistor. 

Interesting story…

Page 7: TRANSISTORS

Shockley was furious and took their work and invented the junction transistor and submitted a patent for it 9 days later. The three shared a Nobel Prize in 1955. Bardeen and Brattain continued in research (and Bardeen later won another Nobel).

Shockley quit to start a semiconductor company in Palo Alto. It folded, but its staff went on to invent the integrated circuit (the "chip") and to found Intel Corporation.

By 1960, all important computers used transistors for logic, and ferrite cores for memory.

Interesting story…

Page 8: TRANSISTORS
Page 9: TRANSISTORS

Qualitative basic operation of point-contact transistor

Problems with first transistor…

Page 10: TRANSISTORS

First Bipolar Junction TransistorsW. Shockley invented the p-n junction transistorThe physically relevant region is moved to the bulk of the material

Page 11: TRANSISTORS

Moore’s Law

It’s an observation made by Gordon E. Moore, in which he predicted that the number of transistors, inside an Integrated Circuit, could be doubled every 24 months.

At the density that also minimized the cost of a transistor.

Page 12: TRANSISTORS

Transistor DefinitionTransistor is an electronic device made of three layers of semiconductor material that can act as an insulator and a conductor.

The three layered transistor is also known as the bipolar junction transistor.

Page 13: TRANSISTORS

Basic models of BJT

Page 14: TRANSISTORS

BJTs – Basic Configurations

pnp BJT npn BJT

Page 15: TRANSISTORS

Bipolar Junction Transistors (BJT’s)

The term bipolar refers to the use of both holes and electrons as charge carriers in the transistor structure

There are two types of BJTs, the NPN and PNP

Page 16: TRANSISTORS

Origin of the namesthe Emitter 'emits' the electrons which pass

through the device the Collector 'collects' them again once

they've passed through the Base ...and the Base?...

Page 17: TRANSISTORS

Transistor operation

force – voltage/currentwater flow – current - amplification

Page 18: TRANSISTORS

Architecture of BJTsThe bipolar junction transistor (BJT) is

constructed with three doped semiconductor regions separated by two pn junctions

Regions are called emitter, base and collector

Page 19: TRANSISTORS

Basic construction

Page 20: TRANSISTORS

Architecture of BJTsThere are two types of BJTs, the npn and pnpThe two junctions are termed the base-emitter

junction and the base-collector junctionThe term bipolar refers to the use of both holes and

electrons as charge carriers in the transistor structureIn order for the transistor to operate properly, the two

junctions must have the correct dc bias voltagesthe base-emitter (BE) junction is forward

biased(>=0.7V for Si, >=0.3V for Ge)the base-collector (BC) junction is reverse biased

Page 21: TRANSISTORS

Regions of a transistorA transistor has three regions namely,

Emitter- heavily doped

Base- lightly doped

Collector- moderately doped

Page 22: TRANSISTORS

Transistor symbols Transistor symbols

Page 23: TRANSISTORS
Page 24: TRANSISTORS
Page 25: TRANSISTORS

How does IC vary with VCE for various IB?

Note that both dc sources are variable

Set VBB to establish a certain IB

Page 26: TRANSISTORS

Transistor biasing The base-emitter (BE) junction is forward

biasedThe base-collector (BC) junction is reverse

biased.

IE=IB+IC

Page 27: TRANSISTORS

• Output current can toggle between large and small (Switching Digital logic; create 0s and 1s)

Page 28: TRANSISTORS

Operating regions of BJT

Cut off region

Linear region

Saturation region

Page 29: TRANSISTORS

Types of transistor

BJT - Bipolar Junction Transistor

UJT- Unipolar Junction Transistor

FET - Field Effect Transistor

MOS - Metal Oxide Semiconductor

Page 30: TRANSISTORS

Basic circuits of BJT

Page 31: TRANSISTORS

Operation of BJTs

BJT will operates in one of following four regionCutoff region (for digital circuit)Saturation region (for digital circuit)Linear (active) region (to be an amplifier)Breakdown region (always be a disaster)

Page 32: TRANSISTORS

Operation of BJTs

Page 33: TRANSISTORS

DC Analysis of BJTsTransistor Currents: IE = IC + IB

alpha (DC) IC = DCIE

beta (DC) IC = DCIB

DC typically has a value between 20 and 200

Page 34: TRANSISTORS

DC Analysis of BJTsDC voltages for the biased transistor:

Collector voltageVC = VCC - ICRC

Base voltageVB = VE + VBE

for silicon transistors, VBE = 0.7 Vfor germanium transistors, VBE = 0.3 V

Page 35: TRANSISTORS

Q-point

The base current, IB, is established by the base bias

The point at which the base current curve intersects the dc load line is the quiescent or Q-point for the circuit

Page 36: TRANSISTORS

Q-point

Page 37: TRANSISTORS

DC Analysis of BJTs

The voltage divider biasing is widely used

Input resistance is:RIN DCRE

The base voltage is approximately:VB VCCR2/(R1+R2)

Page 38: TRANSISTORS

BJT as an amplifierClass A Amplifiers

Class B Amplifiers

Page 39: TRANSISTORS

Class A Amplifiers

Page 40: TRANSISTORS

In a class A amplifier, the transistor conducts for the full cycle of the input signal (360°)used in low-power applications

The transistor is operated in the active region, between saturation and cutoffsaturation is when both junctions are forward biasedthe transistor is in cutoff when IB = 0

The load line is drawn on the collector curves between saturation and cutoff

BJT Class A Amplifiers

Page 41: TRANSISTORS

BJT Class A Amplifiers

Page 42: TRANSISTORS

BJT Class A AmplifiersThree biasing mode for class A amplifiers

common-emitter (CE) amplifiercommon-collector (CC) amplifiercommon-base (CB) amplifier

Page 43: TRANSISTORS

A common-emitter (CE) amplifiercapacitors are used for coupling ac without

disturbing dc levels

BJT Class A Amplifiers

Page 44: TRANSISTORS

A common-collector (CC) amplifiervoltage gain is approximately 1, but current

gain is greater than 1

BJT Class A Amplifiers

Page 45: TRANSISTORS

BJT Class A AmplifiersThe third configuration is the common-base (CB)the base is the grounded (common) terminalthe input signal is applied to the emitteroutput signal is taken off the collectoroutput is in-phase with the inputvoltage gain is greater than 1current gain is always less than 1

BJT Class A Amplifiers

Page 46: TRANSISTORS

BJT Class B Amplifiers

Page 47: TRANSISTORS

When an amplifier is biased such that it operates in the linear region for 180° of the input cycle and is in cutoff for 180°, it is a class B amplifierA class B amplifier is more efficient than a

class AIn order to get a linear reproduction of the input

waveform, the class B amplifier is configured in a push-pull arrangementThe transistors in a class B amplifier must be

biased above cutoff to eliminate crossover distortion

BJT Class B Amplifiers

Page 48: TRANSISTORS
Page 49: TRANSISTORS

When used as an electronic switch, a transistor normally is operated alternately in cutoff and saturationA transistor is in cutoff when the base-emitter

junction is not forward-biased. VCE is approximately equal to VCC

When the base-emitter junction is forward-biased and there is enough base current to produce a maximum collector current, the transistor is saturated

The BJT as a Switch

Page 50: TRANSISTORS

The BJT as a Switch

Page 51: TRANSISTORS

An example -- NOR

Page 52: TRANSISTORS

Transistor as a switch When used as an electronic switch, the transistor is normally operated alternately in cut-off and saturation regions.

Transistor applications

Page 53: TRANSISTORS

Transistor as amplifierDue to the small changes in

base current the collector current will mimic the input with greater amplitude

Page 54: TRANSISTORS

Molecular electronicsCarbon nanotube transistorsNano inspiration wire transistorsQuantum computingCMOS devices will add functionality to CMOS

non-volatile memory, opto-electronics, sensing….

CMOS technology will address new markets macroelectronics, bio-medical devices, …

Biology may provide for new technologies bottom-up assembly, human intelligence

Future of Transistors

Page 55: TRANSISTORS

3D Transistor made using Tri-Gate transistors on its 22nm logic technology.

Advantage of Tri-Gate Transistors ·More than 50% power reduction at

constant performance. ·37% performance increase at low voltage ·Improved performance and efficiency.

What’s new in transistor technology?

Page 56: TRANSISTORS

BJTs – Practical Aspects

Page 57: TRANSISTORS

BJTs – Practical Aspects

Heat sink

Page 58: TRANSISTORS

BJTs – Testing

Page 59: TRANSISTORS

BJTs – Testing

Page 60: TRANSISTORS