Transistor sizing Somayyeh Koohi Department of Computer Engineering Sharif University of Technology Adapted with modifications from lecture notes prepared by author
Transistor sizing
Somayyeh KoohiDepartment of Computer Engineering
Sharif University of TechnologyAdapted with modifications from lecture notes prepared by author
Modern VLSI Design: Chap4 2 of 28Sharif University of Technology
Topics
n Transistor sizing:vSpice analysisvLogical effort
Modern VLSI Design: Chap4 3 of 28Sharif University of Technology
Transistor sizing
n Adjust transistor sizes to achieve desired delayvNot all gates need to have the same delayvNot all inputs to a gate need to have the same
delay
Modern VLSI Design: Chap4 4 of 28Sharif University of Technology
Example: adder carry chain
+
+
ai bi
ai
cibi
ci
bi
ai
biai
c i+1
One stage:
Modern VLSI Design: Chap4 5 of 28Sharif University of Technology
Carry chain optimization
n Connect four stagesn Optimize delay through carry chain by
selecting transistor sizes
Modern VLSI Design: Chap4 6 of 28Sharif University of Technology
Case 1n W/L (in terms of µ, and not λ) for all stages:v nmos = 0.75/0.5, pmos = 1.5/0.5
Modern VLSI Design: Chap4 7 of 28Sharif University of Technology
Case 2
n Wider pulldowns for first stage, larger first stage inverter:
Modern VLSI Design: Chap4 8 of 28Sharif University of Technology
Case 3
n Larger transistors in second and third stages:
Modern VLSI Design: Chap4 9 of 28Sharif University of Technology
Inter-stage effects in transistor sizing
n Increasing a gate’s drive also increases the load to the previous stage:
LargerdriveLarger
load
Modern VLSI Design: Chap4 10 of 28Sharif University of Technology
Topics
n Transistor sizing:vSpice analysisvLogical effort
Modern VLSI Design: Chap4 11 of 28Sharif University of Technology
Logical effort
n Logical effort is a gate delay model that takes transistor sizes into account
n Allows us to optimize transistor sizes over combinational networksvNot accurate for circuits with reconvergent fanout
Modern VLSI Design: Chap4 12 of 28Sharif University of Technology
Logical effort gate delay model
n Express delays in process-independent unitn Gate delay is measured in units of minimum-size
inverter delay τ
absddτ
=τ = 3RC
≈ 12 ps in 180 nm process
40 ps in 0.6 µm process
Modern VLSI Design: Chap4 13 of 28Sharif University of Technology
Logical effort gate delay model (Cont’d)
§ Gate delay formula:d = f + p
n Effort delay f is related to gate’s loadn Parasitic delay p depends on gate’s structurev Represents delay of gate driving no loadv Set by internal parasitic capacitance
n Sizes of the transistors in gates does not affect “p”
Modern VLSI Design: Chap4 14 of 28Sharif University of Technology
Effort delay
n Effort delay has two components:v f = gh
n Electrical effort h is determined by gate’s load:v h = Cout/Cin
v Sometimes called fanout
n Logical effort g is determined by gate’s structurev Measures relative ability of gate to deliver currentv g ≡ 1 for inverter
n Logical effort is independent of size, while electrical effort depends on sizes
Modern VLSI Design: Chap4 15 of 28Sharif University of Technology
Delay Plots
d = f + p= gh + p
Electrical Effort:h = Cout / Cin
Nor
mal
ized
Del
ay: d
Inverter2-inputNAND
g =p =d =
g =p =d =
0 1 2 3 4 5
0
1
2
3
4
5
6
Modern VLSI Design: Chap4 16 of 28Sharif University of Technology
Delay Plots
d = f + p= gh + p
n What about NOR2?
Electrical Effort:h = Cout / Cin
Nor
mal
ized
Del
ay: d
Inverter2-inputNAND
g = 1p = 1d = h + 1
g = 4/3p = 2d = (4/3)h + 2
Effort Delay: f
Parasitic Delay: p
0 1 2 3 4 5
0
1
2
3
4
5
6
g = 5/3h = 2
Modern VLSI Design: Chap4 17 of 28Sharif University of Technology
Computing Logical Effort
n Logical effort is the ratio of the input capacitance of a gate to the input capacitance of an inverter delivering the same output currentv Measure from delay vs. fanout plotsv Or estimate by counting transistor widths
A Y A
B
YA
BY
1
2
1 1
2 2
2
2
4
4
Cin = 3g = 3/3
Cin = 4g = 4/3
Cin = 5g = 5/3
Modern VLSI Design: Chap4 18 of 28Sharif University of Technology
Catalog of Gates
22222Tristate / mux(2n+1)/39/37/35/3NOR(n+2)/36/35/34/3NAND
1Invertern4321
Number of inputsGate type
n Logical effort of common gates:
Modern VLSI Design: Chap4 19 of 28Sharif University of Technology
Catalog of Gates
2n8642Tristate / muxn432NORn432NAND
1Invertern4321
Number of inputsGate type
n Parasitic delay of common gates:v In multiples of pinv (≈1)
Modern VLSI Design: Chap4 20 of 28Sharif University of Technology
Logical effort along a path
n Path logical effort G : Logical effort along a chain of gatesv G = Π gi
n Path electrical effort H : Total electrical effort along path depends on ratio of first and last stage capacitances:v H = Cout/Cin
n Path effort F:v F = ∏fi = ∏gi hi
Modern VLSI Design: Chap4 21 of 28Sharif University of Technology
Branching effort
G = 1H = 90 / 5 = 18GH = 18h1 = (15 +15) / 5 = 6h2 = 90 / 15 = 6F = g1g2h1h2 = 36 = 2GHè F ≠ GH
5
15
1590
90
Modern VLSI Design: Chap4 22 of 28Sharif University of Technology
Branching effort (Cont’d)
n Takes into account fanoutn Branching effort at one stage:
b = (Conpath + Coffpath)/ Conpath
n Branching effort along path (Path branching effort B):v B = Π bi
v BH = ∏hi
Modern VLSI Design: Chap4 23 of 28Sharif University of Technology
Path delay
n Path effort F:vF = GBH
n Path delay is sum of delays of gates along the path:vD = Σ gi hi + Σ pi = DF + PvDf : Path effort delayvP : Path parasitic delay
Modern VLSI Design: Chap4 24 of 28Sharif University of Technology
Sizing the transistors
n Delay is smallest when each stage bears same effortv The sum of a set of numbers (Df) whose product (F) is
constant is minimized by choosing all the numbers to be equal
v Optimal buffer chains are exponentially tapered:
v Thus minimum delay of N stage path is
i FD d D P= = +∑
1ˆ Ni if g h F= =
1ND NF P= +
Modern VLSI Design: Chap4 25 of 28Sharif University of Technology
Sizing the transistors (Cont’d)
n Determine W/L of each gate on path by working backward from the last gate:
n Check work by verifying input cap spec is met
i FD d D P= = +∑1ˆ N
i if g h F= =1ND NF P= +
ˆ
ˆ
out
in
i
i
CC
i outin
f gh gg C
Cf
= =
⇒ =
Modern VLSI Design: Chap4 26 of 28Sharif University of Technology
Example: logical effort
n Size transistors in a chain of three two-input NAND gatesvFirst NAND is driven by minimum-size invertervLast NAND is connected to 4X inverter
Modern VLSI Design: Chap4 27 of 28Sharif University of Technology
Example (Cont’d)
n Logical effort G = 4/3 * 4/3 * 4/3n Branching effort = 1n Electrical effort = 4n F = G B H = 9.5n Optimum effort per stage f^ (1/3)= 2.1
Modern VLSI Design: Chap4 28 of 28Sharif University of Technology
Review of Definitions