Towards a silicon based laserChip-to-chip communication by light
Day 2EIC Pathfinder showcases: energy & environment
FET-Open SiLAS project
Jos HaverkortAssociate ProfessorEindhoven University of [email protected]
Semiconductor industry
ElectronicsPCs, Mobile phones
Optical communicationsInternet, Cloud data centers
Indirect bandgapNo light emission
Direct bandgapEfficient light emissionNot silicon compatible!
Merging of Electronics and Optical communications
Cubic SiGeSilicon compatible!No light emission
Hexagonal SiGeDirect bandgapEfficient light emissionMainstream Electronics Optical communications
Hexagonal
Cubic and hexagonal crystal structure
Cubic
Different atomic arrangements
Different material properties!!
Cubic SiGe Hexagonal SiGe
Direct bandgapEfficient light emission
LASER!
Indirect bandgapNo light emission
Phot
olum
ines
cenc
e
Intense emission
Tunable Emission<1.8-3.5 µm
Hex-GeInfrared
Hex-SiGeCommunications
Hex-SiGe InP Cubic Si1.4 1 0.000039
Light emission efficiency:
~0.9 ns
Phot
olum
ines
cenc
e
Hex-SiGe
Time delay (ns)
• Cores operate at 2GHz• Optical circuitry: 40 Gbit/s• Less energy consumptionHex-SiGe laser needed!
Multi wavelength optical circuitry: Silicon photonics
Continue Moore’s law by adding many cores
Optical links (Si-photonics) for cloud data centers
Intel: InP laser “glued” onto a 300 mm Si wafer VERY COSTLY
Si-compatible laser needed
Infrared optical sensors (1.8 – 3.5 µm).
• Biomedical• Gases• Pollution • Drugs
On chip LIDARLab-on-a chip sensor devices (disposable)
Fabrication in a Si-foundry required!!Si-compatible laser needed
Picture courtesy: IMEC, Belgium
High volume, low-cost markets:need a cheap light source.