Towards a Reconfigurable Nanocomputer Platformphoenix/nsc1/presentation/Beckett.pdfNanocomputer Platform Paul Beckett School of Electrical and Computer Engineering RMIT University

1

1

Towards a ReconfigurableNanocomputer Platform

Paul Beckett

School of Electrical and Computer EngineeringRMIT University

Melbourne, Australia

NSC-1 2

The Nanoscale “Cambrian Explosion”

• Disparity:– Wide range of

emerging non-Sitechnologies

• Diversity:– Many new device

options in CMOS,GaAs and othernon-Si

2

3

Example Nanoscale Devices

Quantum dot

Quantumdiffraction

FET

Quantuminterference

devices

surface super-lattices

RSFQ

Q-Well

GMR/CMR

MQCA

Hybrid-Hall effect

Molecularnano-

magnetics

MagneticRTD

Rotaxane

molecularx-bar

CAEN

Coulomb-coupledopticallypumped

nanodevices

DNA

CNT

C60 logic& memory

Nanotubearray logic

Large-bandgapdevices

(AlN, BN)

RTD/HFET

RTTlogic &memory

Multi-valuedlogic

nano-pipelining

SOI

Si-Ge

Dual-gate

VerticalFET

Ballisticnano-FET

MagneticMolecularNanotubeHetero-junction

Silicon

Disparity →→→→

4

The “Ideal” NanocomputerPlatform?

• Very large, scalable with rich, local connectivity• Built from simple devices that exhibit:

– High functionality (?)– Gain > 1– Static (at least) and preferably non-volatile operation– (Very) low power density– Room temperature operation

• Reliable and fault tolerant• Preferably no intrinsic reliance on any form of

global signal (e.g. a master clock)• Reconfigurable in operation, with little or no

performance penalty

3

5

Three Example Nanoscale Systems

1. Multi-valued SRAM Based Platform– RTD multi-valued RAM

– Dual-gate transistors

2. Phase Transition Device Based Platform– Resistive thin-films

3. A Nano-Magnetic Platform– Double spin-filter junction

6

• metal-insulator tunneltransistor (MITT)– gate voltage modulates the

tunnel barrier

• compatible with currentfabrication processes– can be buried in oxide layer

• Proposed dual-gateincreases functionality– Low-overhead reconfiguration

Multi-valued SRAM BasedPlatform

DrainSource

Top Gate

Back Gate TunnelInsulator

substrate

gate insulator

gate insulator

A

-0.6 -0.4 -0.2 0.0 0.20

0.2

0.4

0.6

0.8

1.0

-0.4V

-0.3V

-0.2V

-0.1V

0.0V

Second-Gate Voltage

B

C

VDD

RL

VG1 VG2

4

7

Multi-valued SRAM BasedPlatform

• 3-state memory (Wei & Lin)

• V1-3 matched by adjustingRTD barrier layer thicknesses

it Line

Word LineVDD3

VSS

IP

V1 V2 V3

ID

VD

IV

VDD3VSSVDD VSS VSS VDD

WordLine

Bit Line

Substrate 1

Substrate 2

RTDs RTDs

Out 1RL RL

insulator

Gnd

RL

• Ultimate dimensions50nm

• ~3 x 109 cells/cm2

8

Non-volatility – Chalcogenide Films

• Chalcogenide films act as fastnon-volatile programmableresistor

• Compatible with current(CMOS) logic fabrication

• Scales well to nanoscaledimensions (20-30nm)

• Vertical integration

Word Line

VA

VSS

Bit Line

PolycrystallineChalcogenide

np

n+substrate layer

bit line

ground plane

back gate

tunnel insulator

word line

Vdd plane

internal routing

top gate/input

schottky metal

gate insulator

gate insulator

TiW

SiO2

5

9

Double Spin-Filter Tunnel Junction

• Magnetoresistive tunnel device (Worledge &Geballe)– Potentially very high GMR

– Formed from two different layers that areinsulating but magnetic with unequal coercivities

nonmagneticelectrode

pinnedmagneticbarrier

nonmagneticelectrode

freemagneticbarrier

d d

J

Ef

J

Ef

pinnedbarrier

freebarrierAntiparallel

parallel

10

Vertical Double Spin-FilterJunction

• Resistance is variedbetween the inner pillarand the multiple outerconductors

• Requires ~20Ǻ films onvertical pillar– No obvious candidates

• Thickness control andlattice matching will beimportant

Substrate

a) Top View b) Side View“pinned” layer

free layerinner

conductor

outerconductors (x 4)

c) Square MeshConnections

6

11

Spin-Filter Based Platform

• RTD substrate addsnon-linearity to effectlogic

• VTT for isolation

• Junction densities inexcess of 2 x 1011/cm2

possible

Conductive substrate

RTD RTD

VDD

RTD

Vertical FETword line

BL BL BL

tunnel junction

verticalchannel

gatedielectric

12

Spatial Computing

• Memory Hierarchy– Tries to hide the cost of

moving code and data itemsfrom one place to another ina processor system

• 3D memory (Zhang)– Proposed as means memory

and processing physicallycloser together

Zhang, 2000

Inter-level Dielectric

IC substrate

memory layers

3D ROM

7

13

A 3D Reconfigurable ComputingPlatform

• Merged processor/memory into 3D structure

• Reduced memoryperformance gap

• Extreme memorybandwidth

• Processing-in-memory;processing-is-memory

memory/processor layers

base substrate

verticalinterconnect

3D Processor/memory

14

Reconfigurable NanoelectronicDevices?

PRO

• Maximizes utility ofsmall devices

• Reconfiguration over-heads kept small

• (Mostly) evolving fromexisting techniques

• Compatible with logicsynthesis systems

CON

• Can they be built?

• Is the added complexityjustified vs. (say)molecular approach?

• Will they efficientlysupport high-performancecomputer architectures

8

15

What’s Next?

• Simulation of nano-magnetic materials

• Characterization of typical junctions– e.g. tunneling conductance

• Simulation of GMR-based array platform

• Development of Spatial Computingtechniques suited to this platform

16

And in the long term?

• “Decimation followed by diversification”

(Gould)

• Test against the “environment”– ease of fabrication, cost, ease of use etc.

• Extinction for some, consolidation andgrowth for others

9

17

Towards a ReconfigurableTowards a ReconfigurableNanocomputerNanocomputer PlatformPlatform

Thank YouThank You

Paul BeckettPaul Beckett