FEATURES Medium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP122 TIP127 Unit V CBO Collector-Base Voltage 100 V V CEO Collector-Emitter Voltage 100 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 5 A P C * Collector Power Dissipation 1.25 W R θJA Thermal Resistance Junction to Ambient 100 ℃/W R θJc Thermal Resistance Junction to Case 8.33 ℃/W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ TO-126 1. EMITTER 2.COLLECTOR 3. BASE -100 -100 -5 -5 TIP122 Darlington Transistor (NPN) TIP127 Darlington Transistor (PNP) Equivalent Circuit TIP122 , TIP127oSolid dot = Green molding compound device, if none, the normal device ode ORDERING INFORMATION Part Number Package Packing Method Pack Quantity TIP122 TO-126 Bulk TIP127 TO-126 TIP122-TU TO-126 Tube TIP127-TU TO-126 Tube Bulk TIP122 XX TIP127 XX R1 R2 R1 R2 NPN PNP 200pcs/Bag 60pcs/Tube 60pcs/Tube 200pcs/Bag JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 1 Rev. - 1.0 www.jscj-elec.com R1 typ. =5 K Ω R2 typ. =210 Ω R1 typ. =5 K Ω R2 typ. =210 Ω
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
FEATURESMedium Power Complementary Silicon Transistors
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter TIP122 TIP127 Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 5 A
PC * Collector Power Dissipation 1.25 W
RθJA Thermal Resistance Junction to Ambient 100 ℃/W