Thyristor and Thyristor/Diode Modulespeymanelc.com/images/IXYS/mcc.pdf · Softstart AC motor controller Light, heat and temperature control Advantages Space and weight savings Simple

© 2000 IXYS All rights reserved E2 - 1

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Thyristor and Thyristor/Diode Modules

Contents

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1611111

6

ITAVM VRRM/VDRM (V) Type PageIFAVM

A

Thyristor Modules

25 MCC 19 E2 - 221 MCC 21 new E2 - 632 MCC 26 E2 - 851 MCC 44 E2 - 1460 MCC 56 E2 - 1864 MCC 60 new E2 - 22

115 MCC 72 E2 - 24104 MCC 94 E2 - 28116 MCC 95 E2 - 30

130 MCC 122 new E2 - 34130 MCC 132 E2 - 36165 MCC 161 E2 - 40190 MCC 162 E2 - 42

203 MCC 170 E2 - 46250 MCC 220 E2 - 50240 MCC 224 E2 - 54221 MCC 225 E2 - 58287 MCC 250 E2 - 62250 MCC 255 E2 - 66320 MCC 310 E2 - 70320 MCC 312 E2 - 74464 MCO 450 E2 - 78560 MCO 500 E2 - 82600 MCO 600 E2 - 82

Thyristor / Diode Modules

32 MCD 26 E2 - 838 MCD 40 E2 - 1251 MCD 44 E2 - 1464 MCD 56 E2 - 1864 600 MDC 56 new E2 - 18

115 MCD 72 E2 - 24104 MCD 94 E2 - 28116 MCD 95 E2 - 30

130 MCD 132 E2 - 36165 MCD 161 E2 - 40190 MCD 162 E2 - 42

240 MCD 224 new E2 - 54250 MCD 220 E2 - 50221 MCD 225 E2 - 58287 MCD 250 E2 - 62250 MCD 255 E2 - 66320 MCD 310 E2 - 70320 MCD 312 E2 - 74

Recommended RC snubber network E2 - 88Peak reverse recovery current E2 - 88

See also section E1page 1 Discrete Thyristors

© 2000 IXYS All rights reservedE2 - 2

ITRMS = 2x 40 AITAVM = 2x 25 AVRRM = 800-1600 V

VRSM VRRM Type

VDSM VDRM

V V Version 1 B Version 8 B

900 800 MCC 19-08io1 B MCC 19-08io8 B1300 1200 MCC 19-12io1 B MCC 19-12io8 B1500 1400 MCC 19-14io1 B MCC 19-14io8 B1700 1600 MCC 19-16io1 B MCC 19-16io8 B

Data according to IEC 60747 and refer to a single thyristor unless otherwise stated.IXYS reserves the right to change limits, test conditions and dimensions

Symbol Test Conditions Maximum Ratings

ITRMS TVJ = TVJM 40 AITAVM TC = 58°C; 180° sine 25 A

TC = 85°C; 180° sine 18 A

ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 400 AVR = 0 t = 8.3 ms (60 Hz), sine 420 A

TVJ = TVJM t = 10 ms (50 Hz), sine 350 AVR = 0 t = 8.3 ms (60 Hz), sine 370 A

∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 800 A2sVR = 0 t = 8.3 ms (60 Hz), sine 730 A2s

TVJ = TVJM t = 10 ms (50 Hz), sine 600 A2sVR = 0 t = 8.3 ms (60 Hz), sine 570 A2s

(di/dt)cr TVJ = TVJM repetitive, IT = 45 A 150 A/µsf =50 Hz, tP =200 µsVD = 2/3 VDRM

IG = 0.45 A non repetitive, IT = ITAVM 500 A/µsdiG/dt = 0.45 A/µs

(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µsRGK = ∞; method 1 (linear voltage rise)

PGM TVJ = TVJM tP = 30 µs 10 WIT = ITAVM tP = 300 µs 5 W

PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C

VISOL 50/60 Hz, RMS t = 1 min 3000 V~IISOL ≤ 1 mA t = 1 s 3600 V~

Md Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in.Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.

Weight Typical including screws 90 g

Features

International standard package,JEDEC TO-240 AA

Direct copper bonded Al2O3 -ceramicbase plate

Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Gate-cathode twin pins for version 1B

Applications

DC motor control Softstart AC motor controller Light, heat and temperature control

Advantages

Space and weight savings Simple mounting with two screws Improved temperature and power

cycling Reduced protection circuits

MCC 19

67

45

32

1

TO-240 AA

Version 8 B

Version 1 B

3 6 7 1 5 4 2

3 6 1 5 2

Thyristor Modules


Symbol Test Conditions Characteristic Values

IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 3 mA

VT IT = 80 A; TVJ = 25°C 2.05 V

VT0 For power-loss calculations only (TVJ = 125°C) 0.85 VrT 18 mΩ

VGT VD = 6 V; TVJ = 25°C 1.5 VTVJ = -40°C 1.6 V

IGT VD = 6 V; TVJ = 25°C 100 mATVJ = -40°C 200 mA

VGD TVJ = TVJM; VD = 2/3 VDRM 0.2 VIGD 10 mA

IL TVJ = 25°C; tP = 10 µs; VD = 6 V 450 mAIG = 0.45 A; diG/dt = 0.45 A/µs

IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA

tgd TVJ = 25°C; VD = 1/2 VDRM 2 µsIG = 0.45 A; diG/dt = 0.45 A/µs

tq TVJ = TVJM; IT = 20 A, tP = 200 µs; -di/dt = 10 A/µs typ. 150 µsVR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM

QS TVJ = TVJM; IT = 25 A, -di/dt = 0.64 A/µs 50 µCIRM 6 A

RthJC per thyristor; DC current 1.3 K/Wper module other values 0.65 K/W

RthJK per thyristor; DC current see Fig. 8/9 1.5 K/Wper module 0.75 K/W

dS Creepage distance on surface 12.7 mmdA Strike distance through air 9.6 mma Maximum allowable acceleration 50 m/s2

Optional accessories for module-type MCC 19 version 1 BKeyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = redType ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385,Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Dimensions in mm (1 mm = 0.0394")

Version 1 B Version 8 B

MCC 19

10 100 10001

10

100

1000

100 101 102 103 1040.1

1

10

IG

VG

mA

mAIG

1: IGT, TVJ = 125C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 WIGD, TVJ = 125C

3

4

2

15

6

Limittyp.

TVJ = 25C

Fig. 1 Gate trigger characteristics

Fig. 2 Gate trigger delay time


Fig. 3 Surge overload currentITSM: Crest value, t: duration

Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward currentat case temperature

Fig. 5 Power dissipation versus on-state current and ambienttemperature (per thyristor)

Fig. 6 Three phase rectifier bridge:Power dissipation versus directoutput current and ambienttemperature

MCC 19


Fig. 7 Three phase AC-controller:Power dissipation versus RMSoutput current and ambienttemperature

Fig. 8 Transient thermal impedancejunction to case (per thyristor)

RthJC for various conduction angles d:

d RthJC (K/W)

DC 1.3180° 1.35120° 1.39

60° 1.4230° 1.45

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)

1 0.018 0.00332 0.041 0.02163 1.241 0.191

Fig. 9 Transient thermal impedancejunction to heatsink (per thyristor)

RthJK for various conduction angles d:

d RthJK (K/W)

DC 1.5180° 1.55120° 1.59

60° 1.6230° 1.65

Constants for ZthJK calculation:

i Rthi (K/W) ti (s)

1 0.018 0.00332 0.041 0.02163 1.241 0.1914 0.2 0.46

MCC 19


Thyristor Modules

VRSM VRRM Type

VDSM VDRM

V V

900 800 MCC 21-08io8 B1300 1200 MCC 21-12io8 B1500 1400 MCC 21-14io8 B1700 1600 MCC 21-16io8 B

Data according to DIN/IEC 747 and refer to a single thyristor unless otherwise stated.

Symbol Conditions Maximum Ratings


ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 320 AVR = 0 t = 8.3 ms (60 Hz), sine 350 A


I2dt TVJ = 45°C t = 10 ms (50 Hz), sine 500 A2sVR = 0 t = 8.3 ms (60 Hz), sine 520 A2s


(di/dt)cr TVJ = TVJM repetitive, IT = 45 A 150 A/µsf = 50Hz, tP = 200µsVD = 2/3 VDRM




PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C




Features

• International standard package,JEDEC TO-240 AA

• Direct copper bonded Al2O3 -ceramicbase plate

• Planar passivated chips• Isolation voltage 3600 V~• UL registered, E 72873• Gate-cathode twin pins for version 1B

Applications

• DC motor control• Softstart AC motor controller• Light, heat and temperature control

Advantages

• Space and weight savings• Simple mounting with two screws• Improved temperature and power

cycling• Reduced protection circuits

67

45

32

1

TO-240 AA3 6 1 5 2

MCC 21

649


Symbol Conditions Characteristic Values


VT IT = 45 A; TVJ = 25°C 1.6 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 100 mA

tgd TVJ = 25°C; VD = ½ VDRM 2 µsIG = 0.3 A; diG/dt = 0.3 A/µs


IRM TVJ = TVJM; IT = 30 A, -di/dt = 0.3 A/µs 4 A

RthJC per thyristor; DC current 1.1 K/Wper module other values 0.55 K/W

RthJK per thyristor; DC current see Fig. 8/9 1.3 K/Wper module 0.65 K/W






MCC 21



VRSM VRRM Type

VDSM VDRM

V V Version 1 B Version 8 B Version 8 B

900 800 MCC 26-08io1 B MCC 26-08io8 B MCD 26-08io8 B1300 1200 MCC 26-12io1 B MCC 26-12io8 B MCD 26-12io8 B1500 1400 MCC 26-14io1 B MCC 26-14io8 B MCD 26-14io8 B1700 1600 MCC 26-16io1 B MCC 26-16io8 B MCD 26-16io8 B

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.IXYS reserves the right to change limits, test conditions and dimensions

Features




Applications


Advantages




ITRMS, IFRMS TVJ = TVJM 50 AITAVM, IFAVM TC = 75°C; 180° sine 32 A

TC = 85°C; 180° sine 27 A

ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 520 AVR = 0 t = 8.3 ms (60 Hz), sine 560 A








PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C




MCC 26MCD 26

Thyristor ModulesThyristor/Diode Modules

67

45

32

1

TO-240 AA

MCDVersion 8 B

MCCVersion 8 B

MCCVersion 1 B

3 6 7 1 5 4 2

3 6 1 5 2

3 1 5 2




VT, VF IT, IF = 80 A; TVJ = 25°C 1.64 V

VT0 For power-loss calculations only (TVJ = 125°C) 0.85 VrT 11.0 mΩ





IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA



QS TVJ = TVJM; IT, IF = 25 A, -di/dt = 0.64 A/µs 50 µCIRM 6 A

RthJC per thyristor/diode; DC current 0.88 K/Wper module other values 0.44 K/W

RthJK per thyristor/diode; DC current see Fig. 8/9 1.08 K/Wper module 0.54 K/W




MCC Version 1 B MCC Version 8 B MCD Version 8 B

MCC 26MCD 26

10 100 10001

10

100

1000

100 101 102 103 1040.1

1

10

IG

VG

mA

mAIG

1: IGT, TVJ = 125C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 WIGD, TVJ = 125C

3

4

2

15

6

Limittyp.

TVJ = 25C




Fig. 3 Surge overload currentITSM, IFSM: Crest value, t: duration


Fig. 5 Power dissipation versus on-state current and ambienttemperature (per thyristor ordiode)


MCC 26MCD 26



Fig. 8 Transient thermal impedancejunction to case (per thyristor ordiode)

Fig. 9 Transient thermal impedancejunction to heatsink (per thyristoror diode)

MCC 26MCD 26


d RthJC (K/W)

DC 0.88180° 0.92120° 0.95

60° 0.9830° 1.01


i Rthi (K/W) ti (s)

1 0.019 0.00312 0.029 0.02163 0.832 0.191


d RthJK (K/W)

DC 1.08180° 1.12120° 1.15

60° 1.1830° 1.21


i Rthi (K/W) ti (s)

1 0.019 0.00312 0.029 0.02163 0.832 0.1914 0.2 0.45



ITRMS, IFRMS TVJ = TVJM; TC = 85°C 60 AITAVM, IFAVM TVJ = TVJM; TC = 85°C; 180° sine 38 A





(di/dt)cr TVJ = TVJM repetitive, IT = 45 A 100 A/µsf = 50 Hz, tP =200 µsVD = 2/3 VDRM




PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C

VISOL 50/60 Hz, RMS IISOL ≤ 1 mA 2500 V~

Md Mounting torque (M4) 1.5/13 Nm/lb.in.Terminal connection torque (M4) 1.5/13 Nm/lb.in.



VRSM VRRM TypeVDSM VDRM

V V

1300 1200 MCD 40-12io61700 1600 MCD 40-16io6

Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.IXYS reserves the right to change limits, test conditions and dimensions

Features

International standard packageminiBLOC, SOT-227 B

Planar passivated chips

Applications

DC motor control Softstart AC motor controller Light, heat and temperature control Half controlled rectifier bridge

Advantages



MCD 40

Preliminary data

K

G

A/KA

SOT-227 B,miniBLOC

K = Cathode, A = Anode, G = Gate,A/K = Common output

A A/K G K

Thyristor/Diode Module

031




VT, VF IT, IF = 80 A; TVJ = 25°C 1.68 V





IL TVJ = 25°C; tP = 10 µs, VD = 6 V 450 mAIG = 0.45 A; diG/dt = 0.45 A/µs

IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA


tq TVJ = TVJM; IT = 120 A, tP = 200 µs; -di/dt = 10 A/µs typ.150 µsVR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM

RthJC per thyristor/diode; DC current 0.6 K/WRthCH 0.1 K/W

dS Creepage distance on surface 8 mmdA Strike distance through air 4 mma Maximum allowable acceleration 50 m/s2

MCD 40

M4 screws (4x) supplied

Dim. Millimeter InchesMin. Max. Min. Max.

A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505

J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987U -0.05 0.1 -0.002 0.004

V 3.30 4.57 0.130 0.180W 0.780 0.830 19.81 21.08

miniBLOC, SOT-227 B



VRSM VRRM Type

VDSM VDRM

V V Version 1 B Version 8 B Version 8 B

900 800 MCC 44-08io1 B MCC 44-08io8 B MCD 44-08io8 B1300 1200 MCC 44-12io1 B MCC 44-12io8 B MCD 44-12io8 B1500 1400 MCC 44-14io1 B MCC 44-14io8 B MCD 44-14io8 B1700 1600 MCC 44-16io1 B MCC 44-16io8 B MCD 44-16io8 B1900 1800 MCC 44-18io1 B MCC 44-18io8 B MCD 44-18io8 B


Features




Applications


Advantages





TC = 85°C; 180° sine 49 A









PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C




MCC 44MCD 44


67

45

32

1

TO-240 AA

MCDVersion 8 B

MCCVersion 8 B

MCCVersion 1 B

3 6 7 1 5 4 2

3 6 1 5 2

3 1 5 2




VT, VF IT, IF = 200 A; TVJ = 25°C 1.75 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA









MCC Version 1 B MCC Version 8 B MCD Version 8 B

MCC 44MCD 44

10 100 10001

10

100

1000

100 101 102 103 1040.1

1

10

IG

VG

mA

mAIG

1: IGT, TVJ = 125C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 WIGD, TVJ = 125C

3

4

2

15

6

Limittyp.

TVJ = 25C








MCC 44MCD 44





MCC 44MCD 44


d RthJC (K/W)

DC 0.53180° 0.55120° 0.58

60° 0.630° 0.62


i Rthi (K/W) ti (s)

1 0.015 0.00352 0.026 0.023 0.489 0.195


d RthJK (K/W)

DC 0.73180° 0.75120° 0.78

60° 0.830° 0.82


i Rthi (K/W) ti (s)

1 0.015 0.00352 0.026 0.023 0.489 0.1954 0.2 0.68




TC = 85°C; 180° sine 60 A



∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 11 200 A2sVR = 0 t = 8.3 ms (60 Hz), sine 10 750 A2s






PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C






V V Version 1 Version 8

900 800 MCC 56-08io1 B MCD 56-08io1 B MCC 56-08io8 B MCD 56-08io8 B1300 1200 MCC 56-12io1 B MCD 56-12io1 B MCC 56-12io8 B MCD 56-12io8 B1500 1400 MCC 56-14io1 B -- MCC 56-14io8 B MCD 56-14io8 B1700 1600 MCC 56-16io1 B MCD 56-16io1 B MCC 56-16io8 B MCD 56-16io8 B1900 1800 MCC 56-18io1 B -- MCC 56-18io8 B MCD 56-18io8 B

1500 1400 MCC 56-14io11700 1600 MCC 56-16io1

700 600 MDC 56-06io1 B

MCC 56MDC 56 MCD 56



Features




Applications


Advantages



67

45

32

1

TO-240 AA

MCDVersion 8

MCCVersion 8

MCCVersion 1

3 6 7 1 5 4 2

3 6 1 5 2

3 1 5 2

3 1 5 4 2

MCDVersion 1

031

MDCVersion 1

3 6 7 1 2




VT, VF IT, IF = 200 A; TVJ = 25°C 1.57 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA



QS TVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/µs 100 µCIRM 24 A






MCC / MCD / MDC Version 1 B MCC Version 8 B MCD Version 8 B

10 100 10001

10

100

1000

100 101 102 103 1040.1

1

10

IG

VG

mA

mAIG

1: IGT, TVJ = 125C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 WIGD, TVJ = 125C

3

4

2

15

6

Limittyp.

TVJ = 25C



MCC 56MDC 56 MCD 56

Version 1 or 8 without B in typ designation = without insert in mountig holes






MCC 56MDC 56 MCD 56






d RthJC (K/W)

DC 0.45180° 0.47120° 0.49

60° 0.50530° 0.52


i Rthi (K/W) ti (s)

1 0.014 0.0152 0.026 0.00953 0.41 0.175


d RthJK (K/W)

DC 0.65180° 0.67120° 0.69

60° 0.70530° 0.72


i Rthi (K/W) ti (s)

1 0.014 0.0152 0.026 0.00953 0.41 0.1754 0.2 0.67

MCC 56MDC 56 MCD 56


ITRMS = 2x 100 AITAVM = 2x 64 AVRRM, DRM = 1600 V

VRSM VRRM Type

VDSM VDRM

V V

1700 1600 MCC 60-16io1 B


Features

International standard package Direct copper bonded Al2O3-ceramic

base plate Planar passivated chips Isolation voltage 3600 V~ Gate-cathode twin pins

Applications


Advantages




ITRMS, IFRMS TVJ = TVJM 100 AITAVM TC = 85°C; 180° sine 64 A









PGAV 0.5 W

VRGM 10 V

TVJ -40...+140 °CTVJM 140 °CTstg -40...+125 °C




MCC 60

Thyristor Module

Preliminary data

67

45

32

1

TO-240 AA3 6 7 1 5 4 2


928




VT, VF IT, IF = 200 A; TVJ = 25°C 1.70 V

VT0 TVJ = 125°C; For power-loss calculations only 0.85 VrT TVJ = TVJM 4.8 mΩ





IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA


tq TVJ = TVJM; IT = 120 A, tP = 200 µs; -di/dt = 10 A/µstyp. 150 µsVR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM


RthJC per thyristor/diode; DC current 0.5 K/Wper module 0.25 K/W

RthCH per thyristor/diode; DC current typ. 0.1 K/W



MCC 60

10 100 10001

10

100

1000

100 101 102 103 1040.1

1

10

IG

VG

mA

mAIG

1: IGT, TVJ = 125C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 WIGD, TVJ = 125C

3

4

2

15

6

Limittyp.

TVJ = 25C






V V Version 1 B Version 8 B

900 800 MCC 72-08io1 B -- MCC 72-08io8 B MCD 72-08io8 B1300 1200 MCC 72-12io1 B MCD 72-12io1B MCC 72-12io8 B MCD 72-12io8 B1500 1400 MCC 72-14io1 B -- MCC 72-14io8 B MCD 72-14io8 B1700 1600 MCC 72-16io1 B MCD 72-16io1B MCC 72-16io8 B MCD 72-16io8 B1900 1800 MCC 72-18io1 B -- MCC 72-18io8 B MCD 72-18io8 B


Features



Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Gate-cathode twin pins for version1B

Applications


Advantages





TC = 85°C; 180° sine 85 A




TVJ = TVJM t = 10 ms (50 Hz), sine 11 850 A2sVR = 0 t = 8.3 ms (60 Hz), sine 11 300 A2s





PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C




MCC 72MCD 72


67

45

32

1

TO-240 AA

MCDVersion 8 B

MCCVersion 8 B

MCCVersion 1 B

3 6 7 1 5 4 2

3 6 1 5 2

3 1 5 2

3 1 5 4 2

MCDVersion 1 B

032




VT, VF IT, IF = 300 A; TVJ = 25°C 1.74 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA









MCC / MCD Version 1 B MCC Version 8 B MCD Version 8 B

MCC 72MCD 72








MCC 72MCD 72





MCC 72MCD 72


d RthJC (K/W)

DC 0.3180° 0.31120° 0.33

60° 0.3530° 0.37


i Rthi (K/W) ti (s)

1 0.008 0.00192 0.054 0.0473 0.238 0.3


d RthJK (K/W)

DC 0.5180° 0.51120° 0.53

60° 0.5530° 0.57


i Rthi (K/W) ti (s)

1 0.008 0.00192 0.054 0.0473 0.238 0.34 0.2 1.25



ITRMS TVJ = TVJM AITAVM TC = 85°C; 180° sine A

ITSM TVJ = 45°C; t = 10 ms (50 Hz) AVR = 0 t = 8.3 ms (60 Hz) A

TVJ = TVJM t = 10 ms (50 Hz) AVR = 0 t = 8.3 ms (60 Hz) A

∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz) A2sVR = 0 t = 8.3 ms (60 Hz) A2s

TVJ = TVJM t = 10 ms (50 Hz) A2sVR = 0 t = 8.3 ms (60 Hz) A2s

(di/dt)cr TVJ = TVJM repetitive, IT = A A/µsf = 50 Hz, tP = 200 µsVD = 2/3 VDRM

IG = A, non repetitive, IT = ITAVM A/µsdiG/dt = A/µs

(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM V/µsRGK = ∞; method 1 (linear voltage rise)

PGM TVJ = TVJM tP = 30 µs WIT = ITAVM tP = 300 µs W

PGAV WVRGM V

TVJ °CTVJM °CTstg °C

VISOL 50/60 Hz, RMS t = 1 min V~IISOL ≤ 1 mA t = 1 s V~

Md Mounting torque (M5) Nm/lb.in.Terminal connection torque (M5) Nm/lb.in.

Weight Typical including screws g



V V

2100 2000 MCC 94-20io1 B MCD 94-20io1 B2300 2200 MCC 94-22io1 B MCD 94-22io1 B


17001800

180104

15401640

1445013500

1185011300

250 150

0.45 5000.45

1000

105

0.510

2.5-4.0/22-352.5-4.0/22-35

90

-40 ...125125

-40 ...125

30003600

Features


Direct Copper Bonded Al2O3 -ceramicbase plate


Applications


Advantages



839

MCC 94MCD 94

High Voltage Thyristor ModuleHigh Voltage Thyristor/Diode Modules

67

45

32

1

TO-240 AA

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2



1.51.6

100200

0.220.110.420.21

12.79.650

15

0.853.2

0.2510

150


MCC 94MCD 94


IRRM, IDRM TVJ = TVJM; VR = VRRM mA

VT IT = 300 A; TVJ = 25°C 1.74 V

VT0 For power-loss calculations only (TVJ = TVJM) VrT mΩ

VGT VD = 6 V; TVJ = 25°C VTVJ = -40°C V

IGT VD = 6 V; TVJ = 25°C mATVJ = -40°C mA

VGD TVJ = TVJM; VD = 2/3 VDRM VIGD TVJ = TVJM; VD = 2/3 VDRM mA

IL TVJ = 25°C; VD = 6 V; tP = 30 µs 200 mAdiG/dt = 0.45 A/µs; IG = 0.45 A

IH TVJ = 25°C; VD = 6 V; RGK = ∞ mA

tgd TVJ = 25°C; VD = 1/2 VDRM 2 µsdiG/dt = 0.45 A/µs; IG = 0.45 A

tq TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs typ. 185 µsdv/dt = 20 V/µs; IT = 150 A; -di/dt = 10 A/µs

QS TVJ = TVJM 170 µCIRM -di/dt = 6 A/µs; IT = 50 A 45 A

RthJC per thyristor; DC current K/Wper module K/W

RthJK per thyristor; DC current K/Wper module K/W

dS Creeping distance on surface mmdA Creepage distance in air mma Maximum allowable acceleration m/s2

10 100 10001

10

100

1000

100 101 102 103 1040.1

1

10

IG

VG

mA

mAIG

1: IGT, TVJ = 125C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 WIGD, TVJ = 125C

3

4

2

15

6

Limittyp.

TVJ = 25C




d RthJC (K/W)

DC 0.22180° 0.23120° 0.25

60° 0.2730° 0.28


i Rthi (K/W) ti (s)

1 0.0066 0.00192 0.0678 0.04773 0.1456 0.344


d RthJK (K/W)

DC 0.42180° 0.43120° 0.45

60° 0.4730° 0.48


i Rthi (K/W) ti (s)

1 0.0066 0.00192 0.0678 0.04773 0.1456 0.3444 0.2 1.32





900 800 MCC 95-08io1 B -- MCC 95-08io8 B MCD 95-08io8 B1300 1200 MCC 95-12io1 B MCD 95-12io1 B MCC 95-12io8 B MCD 95-12io8 B1500 1400 MCC 95-14io1 B -- MCC 95-14io8 B MCD 95-14io8 B1700 1600 MCC 95-16io1 B MCD 95-16io1 B MCC 95-16io8 B MCD 95-16io8 B1900 1800 MCC 95-18io1 B -- MCC 95-18io8 B MCD 95-18io8 B

1500 1400 MCC 95-16io11700 1600 MCC 95-18io1












PGAV 0.5 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C




Features



Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Gate-cathode twin pins for version 1

Applications


Advantages Space and weight savings Simple mounting with two screws Improved temperature and power


MCC 95MCD 95


67

45

32

1

TO-240 AA

MCDVersion 8

MCCVersion 8

MCCVersion 1

3 6 7 1 5 4 2

3 6 1 5 2

3 1 5 2

3 1 5 4 2

MCDVersion 1

032




VT, VF IT, IF = 300 A; TVJ = 25°C 1.5 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA









MCC / MCD Version 1 B MCC Version 8 B MCD Version 8 B

MCC 95MCD 95

Version 1 or 8 without B in typ designation = without insert in mountig holes








MCC 95MCD 95





MCC 95MCD 95


d RthJC (K/W)

DC 0.22180° 0.23120° 0.25

60° 0.2730° 0.28


i Rthi (K/W) ti (s)

1 0.0066 0.00192 0.0678 0.04773 0.1456 0.344


d RthJK (K/W)

DC 0.42180° 0.43120° 0.45

60° 0.4730° 0.48


i Rthi (K/W) ti (s)

1 0.0066 0.00192 0.0678 0.04773 0.1456 0.3444 0.2 1.32


ITRMS = 2x300 AITAVM = 2x128 AVRRM, DRM = 800-1800 V

VRSM VRRM Type

VDSM VDRM

V V

900 800 MCC 122-08io11300 1200 MCC 122-12io11500 1400 MCC 122-14io11700 1600 MCC 122-16io11900 1800 MCC 122-18io1

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.


ITRMS 300 AITAVM TC = 85°C; 180° sine 128 A

ITSM TVJ = 45°C t = 10 ms (50 Hz), sine 3600 AVR = 0 t = 8.3 ms (60 Hz), sine 3850 A





IG = 0.5 A non repetitive, IT = 500 A 500 A/µsdiG/dt = 0.5 A/µs



PGAV 8 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C




MCC 122

Thyristor Module

Preliminary data

3 6 7 1 5 4 2


948

12

3 6 7

54

Features

• International standard package• Direct copper bonded Al2O3-ceramic

base plate• Planar passivated chips• Isolation voltage 3600 V~• UL registered, E 72873• Keyed gate/cathode twin pins

Applications

• Motor control• Power converter• Heat and temperature control for industrial

furnaces and chemical processes• Lighting control• Contactless switches

Advantages

• Space and weight savings• Simple mounting• Improved temperature and power cycling• Reduced protection circuits


MCC 122



VT, VF IT, IF = 120 A; TVJ = 25°C 1.13 V

VT0 TVJ = 125°C; For power-loss calculations only 0.85 VrT TVJ = TVJM 2 mΩ





IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA


tq TVJ = TVJM; IT = 120 A, tP = 200 µs; -di/dt = 10 A/µstyp. 150 µsVR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM


RthJC per thyristor/diode; DC current 0.2 K/Wper module 0.1 K/W

RthCH per thyristor/diode; DC current typ. 0.1 K/W


Optional accessories for modulesKeyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = redType ZY 180L (L = Left for pin pair 4/5) UL Styles 1385,Type ZY 180R (R = right for pin pair 6/7) CSA Class 5851, File 41234













PGAV 8 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C






900 800 MCC 132-08io1 MCD 132-08io11300 1200 MCC 132-12io1 MCD 132-12io11500 1400 MCC 132-14io1 MCD 132-14io11700 1600 MCC 132-16io1 MCD 132-16io11900 1800 MCC 132-18io1 MCD 132-18io1


Features International standard package Direct copper bonded Al2O3 -ceramic

base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins

Applications Motor control Power converter Heat and temperature control for

industrial furnaces and chemicalprocesses

Lighting control Contactless switches

Advantages Space and weight savings Simple mounting Improved temperature and power


MCC 132MCD 132


MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2

12

3 6 7

54

032




VT, VF IT, IF = 300 A; TVJ = 25°C 1.36 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA







Optional accessories for modulesKeyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = redType ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1


MCC MCD



MCC 132MCD 132


Fig. 4 i2t versus time (1-10 ms) Fig. 4a Maximum forward currentat case temperature



MCC 132MCD 132


s

t

mst

0.001 0.01 0.1 10

1000

2000

3000

4000

1 10104

105

106

A2s

ITSM

Ai2t

TVJ = 45°C

TVJ = 125°C

80 % VRRMTVJ = 45°C

50 Hz

TVJ = 125°C





MCC 132MCD 132


d RthJC (K/W)

DC 0.230180° 0.244120° 0.255

60° 0.28330° 0.321


i Rthi (K/W) ti (s)

1 0.0095 0.0012 0.0175 0.0653 0.203 0.4


d RthJK (K/W)

DC 0.330180° 0.344120° 0.355

60° 0.38330° 0.421


i Rthi (K/W) ti (s)

1 0.0095 0.0012 0.0175 0.0653 0.203 0.44 0.1 1.29












PGAV WVRGM V





ITRMS = 2x 300 AITAVM = 2x 165 A VRRM = 2000-2200 V


V V

2100 2000 MCC 161-20io1 MCD 161-20io12300 2200 MCC 161-22io1 MCD 161-22io1


60006400

300165

52505600

180000170000

137000128000

500 150

0.5 5000.5

1000

12060

810

-40 ...125125

-40 ...125

30003600

2.25-2.75/20-254.5-5.5/40-48

125

Features

International standard package Direct Copper Bonded Al2O3 -ceramic


Applications

Motor control Power converter Heat and temperature control for



Advantages

Space and weight savings Simple mounting Improved temperature and power


MCC 161MCD 161

High Voltage Thyristor ModuleHigh Voltage High Voltage

12

3 6 7

54

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2




VT IT = A; TVJ = 25°C V





IL TVJ = 25°C; VD = 6 V; tP = 30 µs 200 mAdiG/dt = 0.45A/µs; IG = 0.45 A


tgd TVJ = 25°C; VD = 1/2 VDRM µsdiG/dt = A/µs; IG = A

tq TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs typ. 150 µsdv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs

QS TVJ = TVJM µCIRM -di/dt = A/µs; IT = A A





22.6

150200

55050 300 235

0.1550.0780.2250.113

12.79.650

40

300 1.36

0.81.6

0.2510

150

20.5 0.5


MCC 161MCD 161


d RthJC (K/W)

DC 0.155180° 0.167120° 0.175

60° 0.19730° 0.226


d RthJK (K/W)

DC 0.225180° 0.237120° 0.245

60° 0.26230° 0.296


i Rthi (K/W) ti (s)

1 0.0072 0.0012 0.0188 0.083 0.129 0.2


i Rthi (K/W) ti (s)

1 0.0072 0.0012 0.0188 0.083 0.129 0.24 0.07 1.0





VRSM VRRM Type

VDSM VDRM













TC = 85°C; 180° sine 181 A









PGAV 8 W

VRGM 10 V

TVJ -40...+125 °CTVJM 125 °CTstg -40...+125 °C




MCC 162MCD 162


12

3 6 7

54

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2




VT, VF IT, IF = 300 A; TVJ = 25°C 1.25 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 200 mA









MCC Version 1 MCD Version 1

MCC 162MCD 162








MCC 162MCD 162






d RthJC (K/W)

DC 0.155180° 0.167120° 0.176

60° 0.19730° 0.227


i Rthi (K/W) ti (s)

1 0.0072 0.0012 0.0188 0.083 0.129 0.2


d RthJK (K/W)

DC 0.225180° 0.237120° 0.246

60° 0.26730° 0.297


i Rthi (K/W) ti (s)

1 0.0072 0.0012 0.0188 0.083 0.129 0.24 0.07 1.0

MCC 162MCD 162



V V

1300 1200 MCC 170-12io11500 1400 MCC 170-14io11700 1600 MCC 170-16io11900 1800 MCC 170-18io1



ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz) 5400 AVR = 0 t = 8.3 ms (60 Hz) 5800 A

TVJ = TVJM t = 10 ms (50 Hz) 5000 AVR = 0 t = 8.3 ms (60 Hz) 5500 A

∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz) 146 000 A2sVR = 0 t = 8.3 ms (60 Hz) 140 000 A2s

TVJ = TVJM t = 10 ms (50 Hz) 125 000 A2sVR = 0 t = 8.3 ms (60 Hz) 126 000 A2s


IG = 1 A, non repetitive, IT = ITAVM 500 A/µsdiG/dt = 1 A/µs



PGAV 20 WVRGM 10 V

TVJ -40...+130 °CTVJM 130 °CTstg -40...+125 °C


Md Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.


Features International standard package Direct copper bonded Al2O3-ceramic

with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins

Applications Motor control, softstarter Power converter Heat and temperature control for


Lighting control Solid state switches

Advantages Simple mounting Improved temperature and power




MCC 170


1

2

3 76 54

3 6 7 1 5 4 2




VT, VF IT, IF = 600 A; TVJ = 25°C 1.65 V


VGT VD = 6 V; TVJ = 25°C 2 VTVJ = -40°C 3 V


VGD TVJ = TVJM; VD = 2/3 VDRM 0.25 VIGD TVJ = TVJM; VD = 2/3 VDRM 10 mA


IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA

tgd TVJ = 25°C; VD = 1/2 VDRM 2 µsIG = 1 A; diG/dt = 1 A/µs


QS TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs 550 µCIRM 235 A

RthJC per thyristor (diode); DC current 0.164 K/Wper module other values 0.082 K/W

RthJK per thyristor (diode); DC current see Fig. 8/9 0.204 K/Wper module 0.102 K/W

dS Creeping distance on surface 12.7 mmdA Creepage distance in air 9.6 mma Maximum allowable acceleration 50 m/s2

Optional accessories for modulesKeyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = redType ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385,Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1

MCC 170



0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 140C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 140C

4

2

15

6

Limittyp.

TVJ = 25C

3

0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 130C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 130C

4

2

15

6

Limittyp.

TVJ = 25C

3


M8x20


ITAVM/IFAVM

IdAVM

Ptot

TA

TA

TC

s

t

mst

0.001 0.01 0.1 10

1000

2000

3000

4000

5000

6000

1 10104

105

106

A2s

0 25 50 75 100 125 1500

100

200

300

400ITSM

AA

°C

ITAVMIFAVM

0 25 50 75 100 125 1500 100 200 3000

100

200

300

400

W

Ptot

A °C

0 25 50 75 100 125 1500 200 400 6000

500

1000

1500

2000

°C

I2dt


50 Hz

TVJ = 130°C

TVJ = 130°C

TVJ = 45°C

RthKA K/W0.10.20.30.40.60.81.0

A

WRthKA K/W

0.3

0.10.150.2

0.060.08

0.04

180° sin120° 60° 30°

DC

180° sin120° 60° 30°

DC

B6Circuit

3xMCC170





MCC 170





d RthJC (K/W)

DC 0.160180° 0.171120° 0.180

60° 0.20330° 0.247


i Rthi (K/W) ti (s)

1 0.0077 0.000542 0.0413 0.0983 0.096 0.544 0.0149 12



d RthJK (K/W)

DC 0.200180° 0.211120° 0.220

60° 0.24330° 0.287


i Rthi (K/W) ti (s)

1 0.0077 0.000542 0.0413 0.0983 0.096 0.544 0.0149 125 0.04 12

MCC 170

0 100 200 300 4000

500

1000

1500

2000

st

ZthJK

s

t

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

0.30

K/W

ZthJC

K/W

IRMS

Ptot

0 25 50 75 100 125 150A

CircuitW3

0.20.150.1

RthKA K/W

0.3

TA

°C

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

3xMCC170

0.040.060.08

W

DC180°120° 60° 30°

DC180°120° 60° 30°









IG = 1 A non repetitive, IT = 250 A 800 A/µsdiG/dt = 1 A/µs



PGAV 20 W

VRGM 10 V

TVJ -40...+140 °CTVJM 140 °CTstg -40...+125 °C






900 800 MCC 220-08io1 MCD 220-08io11300 1200 MCC 220-12io1 MCD 220-12io11500 1400 MCC 220-14io1 MCD 220-14io11700 1600 MCC 220-16io1 MCD 220-16io1










MCC 220MCD 220


765

4

23

1

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2



IRRM TVJ = TVJM; VR = VRRM; VD = VDRM 70 mAIDRM 40 mA

VT, VF IT, IF = 600 A; TVJ = 25°C 1.53 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA



QS TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs 760 µCIRM 275 A







MCC 220MCD 220


MCC MCDThreaded spacer for higher Anode/Cathode construction:Type ZY 250, material brass

20 12

14






MCC 220MCD 220



MCC 220MCD 220

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

ts

ZthJK

K/W

ts

ZthJC

K/W

30°DC

0

0

30°DC




d RthJC (K/W)

DC 0.139180°C 0.141120°C 0.142

60°C 0.14230°C 0.143


i Rthi (K/W) ti (s)

1 0.0037 0.00992 0.0177 0.1683 0.1175 0.456


d RthJK (K/W)

DC 0.179180°C 0.181120°C 0.182

60°C 0.18330°C 0.183


i Rthi (K/W) ti (s)

1 0.0037 0.00992 0.0177 0.1683 0.1175 0.4564 0.04 1.36

835


120602010







(di/dt)cr TVJ = TVJM repetitive, IT = 750 A 100 A/µsf = 50 Hz, tP = 200 µsVD = 2/3 VDRM

IG = 1 A non repetitive, IT = ITAVM 500 A/µsdiG/dt = 1 A/µs



PGAV WVRGM V







80008500

400240

70007500

320000303000

245000240000

1000

-40 ...130130

-40 ...125

30003600

4.5-7/40-6211-13/97-115

750

Features

International standard package Direct Copper Bonded Al2O3-ceramic


Applications

Motor control, softstarter Power converter Heat and temperature control for



Advantages

Simple mounting Improved temperature and power


MCC 224MCD 224


1

2

3 76 54

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2

VRSM VRRM Type

VDSM VDRM

V V

2100 2000 MCC 224-20io1 MCD 224-20io12300 2200 MCC 224-22io1 MCD 224-22io1

024



23

150220

0.1390.0690.1790.089

12.79.650

40

600 1.4

0.80.76

0.2510

150








IL TVJ = 25°C; VD = 6 V; tP = 30 µs 200 mAdiG/dt = 0.45 A/µs; IG = 0.45 A


tgd TVJ = 25°C; VD = 1/2 VDRM 2 µsdiG/dt = 1 A/µs; IG = 1 A

tq TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs typ. 200 µsdv/dt = 50 V/µs; IT = 300 A; -di/dt = 10 A/µs

QS TVJ = TVJM 760 µCIRM -di/dt = 50 A/µs; IT = 400 A 275 A





0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 140C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 140C

4

2

15

6

Limittyp.

TVJ = 25C

3

0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 130C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 130C

4

2

15

6

Limittyp.

TVJ = 25C

3

Fig. 2 Gate trigger delay timeDimensions in mm (1 mm = 0.0394")

MCC MCD

M8x20M8x20

MCC 224MCD 224


0 25 50 75 100 125 1500 100 200 3000

100

200

300

400

500

0 25 50 75 100 125 150

1 10104

105

106

0.001 0.01 0.1 10

2000

4000

6000

8000

0 200 400 6000

500

1000

1500

2000

I2t

ITAVM

IdAVM

A

Ptot

W

TA

TC

st

mst

A2s

0 25 50 75 100 125 1500

50

100

150

200

250

300

350

400ITSM

AA

°C

ITAVM

WPtot

A °C

0.81

0.20.30.40.6

RthKA K/W

0.1

0.20.150.10.080.050.03

0.3

°C

3xMCC224

CircuitB6

TA

RthKA K/W

180° sin120° 60° 30°

DC

180° sin120° 60° 30°

DC

VR = 0V

80 % VRRM

50 Hz



Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward currentat case temperature


TVJ

= 45°CT

VJ = 130°C

TVJ

= 45°CT

VJ = 130°C

745

MCC 224MCD 224


t

ZthJK

s

t

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

0.30

K/W

ZthJC

IRMS

Ptot

0 25 50 75 100 125 1500 100 200 300 400 5000

500

1000

1500

2000

A

3xMCC224

CircuitW3

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

DC

DC180°120° 60° 30°

°CTA

W

K/W

s

30° 60°120°180°

0.20.150.10.080.050.03

0.3

RthKA K/W



d RthJK (K/W)

DC 0.179180° 0.188120° 0.196

60° 0.21630° 0.256


i Rthi (K/W) ti (s)

1 0.0067 0.000542 0.0358 0.0983 0.0832 0.544 0.0129 125 0.04 12



d RthJC (K/W)

DC 0.139180° 0.148120° 0.156

60° 0.17630° 0.214


i Rthi (K/W) ti (s)

1 0.0067 0.000542 0.0358 0.0983 0.0832 0.544 0.0129 12


745

MCC 224MCD 224


VRSM VRRM Type

VDSM VDRM

V V












PGAV 20 WVRGM 10 V

TVJ -40...+130 °CTVJM 130 °CTstg -40...+125 °C













MCC 225MCD 225


1

2

3 76 54

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2




VT, VF IT, IF = 600 A; TVJ = 25°C 1.40 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA








MCC 225MCD 225



0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 140C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 140C

4

2

15

6

Limittyp.

TVJ = 25C

3

0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 130C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 130C

4

2

15

6

Limittyp.

TVJ = 25C

3


MCC MCD

M8x20M8x20


I2dt

Ptot

TA

TCt0.001 0.01 0.1 10

2000

4000

6000

8000

1 10104

105

106

A2s

0 25 50 75 100 125 1500

100

200

300

400ITSM

AA

°C

ITAVMIFAVM

0 25 50 75 100 125 1500 100 200 3000

100

200

300

400

W

Ptot

A °C

RthKA K/W

0 25 50 75 100 125 1500 200 400 6000

500

1000

1500

2000

0.20.15

RthKA K/W

0.3

°C

CircuitB6

0.10.20.30.40.60.81.0

3xMCD2253xMCC225

0.030.050.080.1


50 Hz

TVJ = 130°C

s

TVJ = 45°C

TVJ = 130°C

mst

ITAVM/IFAVM TA

IdAVM

A

W

180° sin120° 60° 30°

DC

180° sin120° 60° 30°

DC





MCC 225MCD 225





d RthJC (K/W)

DC 0.157180° 0.168120° 0.177

60° 0.20030° 0.243


i Rthi (K/W) ti (s)

1 0.0076 0.000542 0.0406 0.0983 0.0944 0.544 0.0147 12



d RthJK (K/W)

DC 0.197180° 0.208120° 0.217

60° 0.24030° 0.283


i Rthi (K/W) ti (s)

1 0.0076 0.000542 0.0406 0.0983 0.0944 0.544 0.0147 125 0.04 12

MCC 225MCD 225

st

ZthJK

s

t

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

0.30

K/W

ZthJC

K/W

IRMS

WPtot

0 25 50 75 100 125 1500 100 200 300 4000

500

1000

1500

2000

A

0.20.150.1

RthKA K/W

0.3

TA

°C

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

0.030.050.08

DC180°120° 60° 30°

DC180°120° 60° 30°

CircuitW3

3xMCD2253xMCC225 or












PGAV 20 W

VRGM 10 V

TVJ -40...+140 °CTVJM 140 °CTstg -40...+125 °C






900 800 MCC 250-08io1 MCD 250-08io11300 1200 MCC 250-12io1 MCD 250-12io11500 1400 MCC 250-14io1 MCD 250-14io11700 1600 MCC 250-16io1 MCD 250-16io11900 1800 MCC 250-18io1










MCC 250MCD 250


765

4

23

1

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2




VT, VF IT, IF = 600 A; TVJ = 25°C 1.36 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA








MCC 250MCD 250


MCC MCD

Threaded spacer for higher Anode/Cathode construction:Type ZY 250, material brass



20 12

14






MCC 250MCD 250



MCC 250MCD 250

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

ts

ZthJK

K/W

ts

ZthJC

K/W 30°DC

30°DC




d RthJC (K/W)

DC 0.129180°C 0.131120°C 0.131

60°C 0.13230°C 0.132


i Rthi (K/W) ti (s)

1 0.0035 0.0992 0.0165 0.1683 0.1091 0.456


d RthJK (K/W)

DC 0.169180°C 0.171120°C 0.172

60°C 0.17230°C 0.173


i Rthi (K/W) ti (s)

1 0.0033 0.0992 0.0159 0.1683 0.1053 0.4564 0.04 1.36

835



V V












PGAV 20 WVRGM 10 V

TVJ -40...+130 °CTVJM 130 °CTstg -40...+125 °C













MCC 255MCD 255


1

2

3 76 54

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2


MCC 255MCD 255



VT, VF IT, IF = 600 A; TVJ = 25°C 1.36 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA









MCC 255 MCD 255



0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 140C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 140C

4

2

15

6

Limittyp.

TVJ = 25C

3

0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 130C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 130C

4

2

15

6

Limittyp.

TVJ = 25C

3

M8x20 M8x20


I2dt

ITAVM/IFAVM

IdAVM

Ptot

W

TA

TA

TC

st

mst

0.001 0.01 0.1 10

2000

4000

6000

8000

10000

1 10104

105

106

A2s

0 25 50 75 100 125 1500

100

200

300

400ITSM

AA

°C

ITAVMIFAVM

0 25 50 75 100 125 1500 100 200 3000

100

200

300

400

500

WPtot

A °C

RthKA K/W

0 25 50 75 100 125 1500 200 400 6000

500

1000

1500

2000

°C

0.10.20.30.40.60.81.0


50 Hz

TVJ = 130°C TVJ = 45°C

TVJ = 130°C

A

RthKA K/W

0.030.060.10.150.20.30.4

CircuitB6

3xMCD2553xMCC255 or

180° sin120° 60° 30°

DC

180° sin120° 60° 30°

DC

MCC 255MCD 255






MCC 255MCD 255




d RthJC (K/W)

DC 0.139180° 0.148120° 0.156

60° 0.17630° 0.214


i Rthi (K/W) ti (s)

1 0.0066 0.000542 0.0358 0.0983 0.0831 0.544 0.0129 12



d RthJK (K/W)

DC 0.179180° 0.188120° 0.196

60° 0.21630° 0.254


i Rthi (K/W) ti (s)

1 0.0066 0.000542 0.0358 0.0983 0.0831 0.544 0.0129 125 0.04 12

st

ZthJK

s

t

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

0.30

K/W

ZthJC

K/W

IRMS

WPtot

0 25 50 75 100 125 1500 100 200 300 400 5000

500

1000

1500

2000

A

TA

°C

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

DC180°120° 60° 30°

DC180°120° 60° 30°

RthKA K/W

0.030.060.10.150.20.30.4

CircuitW3

3xMCD2553xMCC255 or












PGAV 20 W

VRGM 10 V

TVJ -40...+140 °CTVJM 140 °CTstg -40...+125 °C
















030

MCC 310MCD 310


765

4

23

1

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2




VT, VF IT, IF = 600 A; TVJ = 25°C 1.32 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA








MCC 310MCD 310


MCC MCDThreaded spacer for higher Anode/Cathode construction:Type ZY 250, material brass



20 12

14






MCC 310MCD 310



MCC 310MCD 310

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

ts

ZthJK

K/W

ts

ZthJC

K/W

30°DC

30°DC

0

0




d RthJC (K/W)

DC 0.112180°C 0.113120°C 0.114

60°C 0.11530°C 0.115


i Rthi (K/W) ti (s)

1 0.003 0.0992 0.0143 0.1683 0.0947 0.456


d RthJK (K/W)

DC 0.152180°C 0.154120°C 0.154

60°C 0.15530°C 0.155


i Rthi (K/W) ti (s)

1 0.003 0.0992 0.0143 0.1683 0.0947 0.4564 0.04 1.36

835


VRSM VRRM Type

VDSM VDRM

V V












PGAV 20 WVRGM 10 V

TVJ -40...+140 °CTVJM 140 °CTstg -40...+125 °C













MCC 312MCD 312


1

2

3 76 54

MCD

MCC

3 6 7 1 5 4 2

3 1 5 4 2


MCC 312MCD 312



VT, VF IT, IF = 600 A; TVJ = 25°C 1.32 V






IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA









MCC MCD



0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 140C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W

5: PGM = 60 W

6: PGM = 120 WIGD, TVJ = 140C

4

2

15

6

Limittyp.

TVJ = 25C

3

M8x20 M8x20


MCC 312MCD 312

0 100 200 300 400 5000

100

200

300

400

500

600

0 25 50 75 100 125 150

1 10104

105

106

0 25 50 75 100 125 150

0.001 0.01 0.1 10

2000

4000

6000

8000

10000

0 200 400 600 8000

500

1000

1500

2000

2500

3000

I2t

ITAVM / IFAVM

IdAVM

A

Ptot W

TA

TC

st

mst

A2s

0 25 50 75 100 125 1500

100

200

300

400

500

600ITSM

AA

°C


50 Hz

TVJ = 140°C

TVJ = 140°C

TVJ = 45°C

ITAVMIFAVM

WPtot

A °C

0.60.8

0.10.20.30.4

RthKA K/W

0.06

0.20.150.10.070.040.02

0.3

°C

3xMCC312 or

3xMCD312

CircuitB6

TA

RthKA K/W

180° sin120° 60° 30°

DC

180° sin120° 60° 30°

DCVR = 0V



Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward currentat case temperature



MCC 312MCD 312


d RthJC (K/W)

DC 0.120180° 0.128120° 0.135

60° 0.15330° 0.185


i Rthi (K/W) ti (s)

1 0.0058 0.000542 0.031 0.0983 0.072 0.544 0.0112 12



d RthJK (K/W)

DC 0.160180° 0.168120° 0.175

60° 0.19330° 0.225


i Rthi (K/W) ti (s)

1 0.0058 0.000542 0.031 0.0983 0.072 0.544 0.0112 125 0.04 12

t

ZthJK

s

t

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

0.25

K/W

ZthJC

IRMS

Ptot

0 25 50 75 100 125 1500 200 400 6000

500

1000

1500

2000

2500

3000

0A

3xMCC312 or3xMCD312

CircuitW3

0.20.150.10.070.040.02

RthKA K/W

0.3

10-3 10-2 10-1 100 101 1020.00

0.05

0.10

0.15

0.20

DC180°120° 60° 30°

DC180°120° 60° 30°

°CTA

W

K/W

s





ITRMS TVJ = TVJM AITAV TC = 85°C; 180° sine A

ITSM TVJ = 45°C t = 10 ms (50 Hz) AVR = 0 t = 8.3 ms (60 Hz) A


I2t TVJ = 45°C t = 10 ms (50 Hz) A2sVR = 0 t = 8.3 ms (60 Hz) A2s






PGAV WVRGM V





ITRMS = 750 AITAV = 464 AVRRM = 2000-2200 V

1500016000

11250001062000

845000813000

960 100

1 5001

1000

120603010

-40...130130

-40...125

30003600

1300014400

750464


Features

Direct copper bonded Al2O3 -ceramicwith copper base plate

Planar passivated chips Isolation voltage 3600 V~ UL applied Keyed gate/cathode twin pins

Applications

Motor control, soft starter Power converter Heat and temperature control for



Advantages

Improved temperature and powercycling

Reduced protection circuits

4.5-7/40-62 11-13/97-115

650

VRSM VRRM Type

VDSM VDRM

V V

2100 2000 MCO 450-20io12300 2200 MCO 450-22io1

MCO 450

High Power SingleThyristor Module

3 5 4 2 32 5

4

030


MCO 450

23

300400

40

0.2510

300

21 1

35050 500 10


IRRM TVJ = TVJM; VR = VRRM mA






IL TVJ = 25°C; VD = 6 V; tP = µs mAdiG/dt = A/µs; IG = 1 A



tq TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs typ. µsdv/dt = V/µs; IT = A; -di/dt = A/µs

RthJC DC current K/WRthJK DC current K/W

dS Creep distance on surface mmdA Strike distance in air mma Maximum allowable acceleration m/s2

30 400 1

600 1.15

0.770.42

12.79.650

0.0720.096


0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 130°C2: IGT, TVJ = 25°C3: IGT, TVJ = -40°C

µs

tgd

V

4: PGM = 20 W5: PGM = 60 W6: PGM = 120 W

IGD, TVJ = 130°C

4

2

1 56

Limittyp.

3

TVJ = 25°C



Optional accessories for modulesKeyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red

UL 758, style 1385, File E 38136,CSA class 5851, guide 460-1-1, appl. 41234

Type ZY 180 L (L = Left for pin pair 4/5)


MCO 450

Fig. 6 Power dissipation versus on-state current and ambienttemperature


Fig. 4 I2t versus time (1-10 ms) Fig. 5 Maximum forward currentat case temperature


0 300 600 900 12000

500

1000

1500

2000

2500

3000

3500

4000

0.001 0.01 0.1 10

2000

4000

6000

8000

10000

12000

14000

0 200 400 600 8000

200

400

600

800

1000

0 25 50 75 100 125 150

1 10105

106

107

0 25 50 75 100 125 150

I2t

ITAVM

IdAVM

A

TA

TC

st

mst

A2s

0 25 50 75 100 125 1500

100

200

300

400

500

600

700

800

°C


50 Hz

TVJ = 130°C

TVJ = 130°C

TVJ = 45°C

ITAVM

WPtot

A °C

RthKA K/W

0.030.070.120.20.30.40.6

°C

6xMCO450

CircuitB6

TA

RthKA K/W

180° sin120° 60° 30°

DC

180° sin120° 60° 30°

DCVR = 0VITSM

AA

0.010.020.030.0450.060.080.12

Ptot

W


MCO 450

Fig.10 Transient thermal impedancejunction to heatsink

0 300 600 9000

500

1000

1500

2000

2500

3000

3500

4000

t

ZthJK

s

t

10-3 10-2 10-1 100 101 1020.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

K/W

ZthJC

IRMS

Ptot

0 25 50 75 100 125 150A

6xMCO450

CircuitW3

10-3 10-2 10-1 100 101 1020.00

0.02

0.04

0.06

0.08

0.10

0.12

DC180°120° 60° 30°

DC180°120° 60° 30°

°CTA

W

K/W

s

RthKA K/W

0.010.020.030.0450.060.080.12

Fig. 9 Transient thermal impedancejunction to case



d RthJC (K/W)

DC 0.072180° 0.0768120° 0.081

60° 0.09230° 0.111


i Rthi (K/W) ti (s)

1 0.0035 0.00542 0.0186 0.0983 0.0432 0.544 0.0067 12


d RthJK (K/W)

DC 0.096180° 0.1120° 0.105

60° 0.11630° 0.135


i Rthi (K/W) ti (s)

1 0.0035 0.00542 0.0186 0.0983 0.0432 0.544 0.0067 125 0.024 12



V V

1300 1200 MCO 500-12io11500 1400 MCO 500-14io11700 1600 MCO 500-16io11900 1800 MCO 500-18io1

ITRMS = 880 AIT(AV)M = 560 AVRRM = 1200-1800 V

1700016000

14450001062000

845000813000

960 100

1 5001

1000

120603010

-40...140140

-40...125

30003600

1300014400

880560








4.5-7/40-62 11-13/97-115

650


MCO 500

High Power Thyristor Modules

3 5 4 2 32 5

4


ITRMS TVJ = TVJM AIT(AV)M TC = 85°C; 180° sine A






IG = A, non repetitive, IT = IT(AV)M A/µsdiG/dt = A/µs


PGM TVJ = TVJM tP = 30 µs WIT = IT(AV)M tP = 500 µs W

PGAV WVRGM V





030


0.01 0.1 1 10

1

10

100

10-3 10-2 10-1 100 101 1020.1

1

10

IG

VG

A

AIG

1: IGT, TVJ = 140C

2: IGT, TVJ = 25C

3: IGT, TVJ = -40C

µs

tgd

V

4: PGM = 20 W5: PGM = 60 W6: PGM = 120 W

IGD, TVJ = 140C

4

2

1 56

Limittyp.

TVJ = 25C

3










IL TVJ = 25°C; VD = 6 V; tP = µs mAdiG/dt = A/µs; IG = A







23

300400

0.0720.096

40

1200 1.3

0.80.38

0.2510

30 4001 1

300

21 1

35050 500 10

12.79.650


UL 758, style 1385,CSA class 5851, guide 460-1-1


MCO 5005

2

10

49

M8x20


MCO 500

0 300 600 900 1200 15000

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

0.001 0.01 0.1 10

2000

4000

6000

8000

10000

12000

14000

0 200 400 600 8000

200

400

600

800

1000

1200

0 25 50 75 100 125 150

1 10105

106

107

0 25 50 75 100 125 150

I2t

ITAVM / IFAVM

IdAVM

A

TA

TC

st

mst

A2s

0 25 50 75 100 125 1500

100

200

300

400

500

600

700

800

900

1000

°C


50 Hz

TVJ = 140°C

TVJ = 140°C

TVJ = 45°C

ITAVM

WPtot

A °C

RthKA K/W

0.030.070.120.20.30.40.6

°C

6xMCO500

CircuitB6

TA

RthKA K/W

180° sin120° 60° 30°

DC

180° sin120° 60° 30°

DCVR = 0VITSM

AA

0.010.020.030.0450.060.080.12

Ptot

W

Fig. 6 Power dissipation versus on-state current and ambienttemperature


Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 5 Maximum forward currentat case temperature



MCO 500

Fig.10 Transient thermal impedancejunction to heatsink (per thyristor)

0 300 600 900 12000

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

t

ZthJK

s

t

10-3 10-2 10-1 100 101 1020.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

K/W

ZthJC

IRMS

Ptot

0 25 50 75 100 125 150A

6xMCO500

CircuitW3

10-3 10-2 10-1 100 101 1020.00

0.02

0.04

0.06

0.08

0.10

0.12

DC180°120° 60° 30°

DC180°120° 60° 30°

°CTA

W

K/W

s

RthKA K/W

0.010.020.030.0450.060.080.12

Fig. 9 Transient thermal impedancejunction to case (per thyristor)



d RthJC (K/W)

DC 0.072180° 0.0768120° 0.081

60° 0.09230° 0.111


i Rthi (K/W) ti (s)

1 0.0035 0.00542 0.0186 0.0983 0.0432 0.544 0.0067 12


d RthJK (K/W)

DC 0.096180° 0.1120° 0.105

60° 0.11630° 0.135


i Rthi (K/W) ti (s)

1 0.0035 0.00542 0.0186 0.0983 0.0432 0.544 0.0067 125 0.024 12


ITRMS = 928 AITAV = 600 AVRRM = 2000-2200 V

1500016000

11250001062000

845000813000

960 100

1 5001

1000

120603010

-40...140140

-40...125

30003600

1300014400

928600


ITRMS TVJ = TVJM AITAV TC = 85°C; 180° sine A









PGAV WVRGM V






Features

Direct copper bonded Al2O3 -ceramicwith copper base plate

Planar passivated chips Isolation voltage 3600 V~ UL applied Keyed gate/cathode twin pins

Applications

Motor control, softstarter Power converter Heat and temperature control for



Advantages

Improved temperature and powercycling

Reduced protection circuits

4.5-7/40-62 11-13/97-115

650


V V

2100 2000 MCO 600-20io12300 2200 MCO 600-22io1

Preliminary data

748

MCO 600

High Power SingleThyristor Module

3 5 4 2 32 5

4


23

300400

0.0650.085

60

0.2510

300

21 1

35050 500 10


UL 758, style 1385, File E 38136,CSA class 5851, guide 460-1-1, appl. 41234










IL TVJ = 25°C; VD = 6 V; tP = µs mAdiG/dt = A/µs; IG = 1 A





dS Creep distance on surface mmdA Strike distance in air mma Maximum allowable acceleration m/s2

30 400 1

600 1.15

0.770.42

12.79.650

MCO 6005

2

10

49


Recommended RC snubber network against hole storage effect overvoltage

Type Supply Voltage VvRMS Conditions

≤ 250 V ≤ 400 V ≤ 575 V f = 40 - 60 HzShort circuit voltage 4-6 %

MCC/MCD/MDD 19/26 R = 68 Ω/6 W R = 68 Ω/6 W R = 100 Ω/10 W Voltage safety factor 2.5C = 0.22 µF C = 0.22 µF C = 0.1 µF

MCC/MCD/MDD R = 33 Ω/10 W R = 47 Ω/10 W R = 68 Ω/10 W44/56/60/72/94/95 C = 0.22 µF C = 0.22 µF C = 0.1 µF

MCC/MCD/MDD/MCO/MDO R = 33 Ω/25 W R = 33 Ω/25 W R = 47 Ω/25 W122/132/142/161/162/170/ C = 0.47 µF C = 0.47 µF C = 0.1 µF172/220/225/250/255/310/312/450/500/600

Peak reverse recovery current versus -di/dt

0 2 4 6 8 10 120

20

40

60

80

100

120

A/s-di/dt

IRM

A

VR > 100V

MCC19MCC26

MCC44

MCC56

MCC72

MCC94MCC95

MCC132

MCC161MCC162

MCC225MCC170

MCC224MCC255MCC312

TVJ= TVJM

IT = ITAVM

_

MCO 450MCO 500MCO 600

MCC 60

MCC 122

Thyristor and Thyristor/Diode Modulespeymanelc.com/images/IXYS/mcc.pdf · Softstart AC motor controller Light, heat and temperature control Advantages Space and weight savings Simple

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