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T.N. Theis 3/25/03 Research Thomas N. Theis Director, Physical Sciences IBM Research Almaden - Yorktown - Zurich Nanotechnology: A Look into the Future
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Thomas N. Theis Director, Physical Sciences IBM Research ...

Feb 23, 2022

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Page 1: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Thomas N. TheisDirector, Physical SciencesIBM Research Almaden - Yorktown - Zurich

Nanotechnology:A Look into the Future

Page 2: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Topics ...

Why is IBM pursuing research in nanoscale scienceand technology?

Self-assembly - the challenge to do it better

Outlook

Page 3: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Nanotechnology is...

“Research and technology development at the atomic, molecular or macromolecular levels, in the length scale of approximately 1 – 100 nm range…”

National Science Foundationwww.nsf.gov/home/crssprgm/nano/omb_nifty50.htm

Page 4: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

By the NSF definition, silicon microelectronics is already a nanotechnology.

$1000 buys...

1.E-03

1.E+00

1.E+03

1.E+06

1.E+09

1.E+12

1940 1950 1960 1970 1980 1990 2000 2010 2020

Year

Add

ition

s pe

r sec

ond

Vacuum tube

Discrete transistor

Integrated circuit

Data from R. Kurzweil, 1999, The Age of Spiritual Machines

ENIAC

DEC PDP-8

IBM PC

Pentium 4 PC

Page 5: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

The silicon transistor has become a nanodevice.

Bulk SOI

130 nm

Double-gateGround plane

Ultimate double gate

10 – 15 nm ?

Page 6: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

An Experimental Silicon Transistor

TSi=7nm Lgate=6nm

Source Drain

Gate

B. Doris et al., IEDM , 2002.

Page 7: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Approaching the ultimate silicon nanodevice(a double-gate Transistor or FinFET)

Poly-SiTsi=20nm Tox=1.6nm H=65nm

BOX

TEOS

H

Tsi

TEM

SEM

Tox = 1.6nm

Poly-Si

Si

TEM

60 nm channel length FET

Cross-section

Page 8: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Is there a successor to silicon?

Organic Electronics?Molectronics? Spintronics?

Quantum Computing?

DNA Computing?:

i100 nm

NanoscaleScience and Technology

principle features specified to: i1mm

i10 m

Page 9: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Attributes of Successful Digital Logic Devices

• Output drives the input• Signal level restoration• Noise immunity• Global as well as localcommunications

After H.-S. P. Wong, “Novel Device Options” in Sub-100nm CMOS Short Course, IEDM, 1999

Page 10: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

“Revolutionizing” a large, complex, stratified industry is not easy.

• Sphere of successful influence: +/- one layer

ApplicationArchitecture

SystemCircuitDevice

MaterialsPhysics/chemistry

Adapted from M. Horowitz, in Focus Center Research Program (MARCO) MSD-C2S2 Topical Workshop, Nov. 12, 2001

Page 11: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Carbon Nanotubes

STM Image

Page 12: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

An alternative logic switch --A simple Carbon Nanotube Transistor

Page 13: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Carbon nanotube intra-molecular logic gate (NOT gate, voltage inverter)

-2

-1

0

1

2

-4 -2 0 2 4VIN (V)

V OU

T (V)

Gain>1

Page 14: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Ti Ti Ti

Al Al

dox=15nm

TopTop--gate carbon nanotube transistorgate carbon nanotube transistor

Appl. Phys. Lett. 80, 3817 (2002)

Page 15: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Comparison with siliconComparison with silicon

threshold voltagethreshold voltage --0.2V0.2V --0.5V0.5V

drive currentdrive current 2100mA/mm2100mA/mm650mA/mm650mA/mm(Vg(Vg--Vt=Vt=--1.0V)1.0V)

gate oxide thicknessgate oxide thickness 1.5nm1.5nm ~15nm~15nm

transconductancetransconductance 2300mS/mm2300mS/mm650mS/mm650mS/mm

channel lengthchannel length 50nm50nm 260nm260nm

pp--MOSFET MOSFET a)a) pp--CNFETCNFET

IIOnOn/I/IOffOff ~10~1066101066 -- 101077

subthreshold slopesubthreshold slope 70mV/dec70mV/dec 130mV/dec130mV/deca) R. Chau et al. Proceedings of IEDM 2001, p.621

Page 16: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Carbon nanotube transistors have promise

Carrier transport is ballistic and ambipolarAll bonds are satisfied, stable, and covalentChemical synthesis controls a key dimensionDevice is not “wed” to a particular substrate

because:

but much remains to be done:ScalabilityContactsDopingDevice stability (charge trapping)High yield, selective growth of nanotubes(control of the diameter, length, chirality, position)

Page 17: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Memory Everyone wants non-volatile, low-power memory.Everyone wants a dense cross-point memory.

IB

W

I

WL

WL

SLSL

Amplifier

Current for write

Sensepath

Select column

Select row

There is no conceptual problem with bistable hysteretic two-terminal devices as cross-point memory cells.

Page 18: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Memory Landscape

volatile non-volatile1Transistor 1T-DRAM Floating-gate

SONOSSET

Multiple Transistor SRAM1T-1C DRAM FeRAM1T-1R MRAM

polymer RAMmolecular memoryphase-change RAMperovskite MIM RAM

1R (Cross-point) MRAMpolymer RAMmolecular memoryperovskite MIM RAM

Page 19: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Memory (continued) • There is no shortage of two-terminal, bistable

hysteretic memory devices and materials!

– MTJ MRAM (IBM/Infineon, Motorola, Toshiba, NEC, Sony, HP, Honeywell, Micromem, Motorola, NVE, Samsung, USTC, Toshiba)

– Chalcogenide glasses (Intel/Ovonyx, Micron Technology/Axon Technologies, Samsung, ST Micro)

– Polymeric resistive memory (Intel/Opticom, AMD/Coatue)– Molecular memories (Hewlett Packard, Molecular

Electronics Corp., Zettacore, Nantero, …)

• But ...– All memories require logic devices for read/write.

Candidate memory cells must be integrated with logic. – Replacing a transistor-based memory cell with a cross-

point cell will typically reduce performance.

Page 20: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Millipede: A nanomechanical approach to storing information

Page 21: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

The Quantum Mirage: Single Channel Information Transport

Topograph

dI/dV difference

Page 22: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Multi Channel Information Transport

Topograph

dI/dV difference

Page 23: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

But how can we position atoms cheaply?

Persuade them to assemble themselves!

Page 24: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Nature's Self-Assembly

http://www.its.caltech.edu/~atomic/snowcrystals/photos/WWick/wwick.htm

Page 25: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Self-assembled Magnetic Nanocrystals

S. Sun, C. B. Murray, D. Weller, L. Folks, A. Moser, Science, 287, 1989 2000

15 nm

8.5nm grains σarea ≅ 0.5 4 nm FePt NPs σarea ≅ 0.05

35 Gbit/in2 media FePt Nanoparticle Arrays

O

O

CH3

O

O

H3C

Pt

FeCO

CO

CO

CO

OC

CH3H3CFePt

- COHeat,COOH

NH2

Page 26: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 ResearchF. X. Redl, K. S. Cho and C. B. Murray.

AB13 binary Nanocrystal Superlattice of PbSe and Fe2O3

Multi-Component Nanocrystal Superlattices

Page 27: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

T. J. Watson Research Center

40 nm40 nm

(100) View (110) View

20 nm500 nm

Straight PbSe Nanowires

Semiconductor Nanowires

Branched PbSe Nanowires with High Surface Area

Page 28: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

200 nm

Self-assembly: SiGe Quantum Dots

Page 29: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Precise Placement of Quantum Dots

Page 30: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Self Assembly: A One-Monlayer-Thick Pentacene “Snowflake”

50 m

Page 31: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Thin Film Transistors on Transparent Plastic:

µ = 0.2 to 0.4 cm2 V-1s-1, operating voltage 0 to 4 V.All fabrication processes done at room temperature.

Page 32: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Patterning Silicon with Block Co-polymers

Page 33: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Pourous Dielectrics for On-Chip Wiring

Page 34: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

How much digital information will specify the structure?

IBM eServer p690

20 m

200 nm

20 m

A living thing (Paramecium)

Drawing from: “To Know Ourselves,” US Dept. of Energy and The Human Genome Project 1996.

Page 35: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

How much digital information is needed to BUILD the structure?

• Microprocessor – Gigabytes

• Living Thing – Megabytes!

Page 36: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Nanotechnology ...

The ability to design and control the structure of an object on all length scales, from the atomic to the macroscopic.

Page 37: Thomas N. Theis Director, Physical Sciences IBM Research ...

T.N. Theis 3/25/03 Research

Nanotechnology: We’re just getting started.

$1000 buys...

1.E-03

1.E+00

1.E+03

1.E+06

1.E+09

1.E+12

1940 1950 1960 1970 1980 1990 2000 2010 2020

Year

Add

ition

s pe

r sec

ond

Vacuum tube

Discrete transistor

Integrated circuit