The Study of Plasma-Enhanced Silicon Nitride Deposition Using SiH4/NH3/N2 Mixture Ladthai Thaiyotin Sompong Charoenkit, Win Bunjongpru, Charndet Hruanan and Itti Rittaporn Thai Microelectronic Center (TMEC) National Electronics and Computor Technology Center (NECTEC)
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The Study of Plasma-Enhanced Silicon NitrideDeposition Using SiH4/NH3/N2 Mixture
Ladthai Thaiyotin
Sompong Charoenkit, Win Bunjongpru, Charndet Hruanan and Itti Rittaporn
Thai Microelectronic Center (TMEC)
National Electronics and Computor Technology Center (NECTEC)
Out line
- Introduction
- Experiment
- Result
- Conclusion
IntroductionPlasma Enhanced Chemical Vapor Deposition (PECVD)
- IC and MEMs Passivation Layer
Low processing temperature, Good step coverage, good passivationfor both moisture and sodium ions.
- Process Gas
SiH4+N2 ----> Less controllable
SiH4+NH3 ----> More Hydrogen content
SiH4 + NH3 + N2The Study of Plasma-Enhanced Silicon NitrideDeposition Using SiH4/NH3/N2 Mixture