NSF Center for NSF Center for Microcontamination Microcontamination Control Control The Removal of Micro and The Removal of Micro and Nanoscale Particulate Defects Nanoscale Particulate Defects A. A. Busnaina* and J. Park** A. A. Busnaina* and J. Park** *W. L. Smith Professor and Director *W. L. Smith Professor and Director NSF Center for Nano and NSF Center for Nano and Microcontamination Microcontamination Control Control www.cmc.neu.edu and the Nanomanufacturing Research and the Nanomanufacturing Research Institute Institutewww.nano.neu.edu Northeastern University, Boston, MA 02115 Northeastern University, Boston, MA 02115 - - 5000 5000 and and +DQ\DQJ 8QLY **Electronic Materials laboratory **Electronic Materials laboratory Hanyang Hanyang University, University, Ansan Ansan , South Korea , South Korea
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Bru
shR
PM
1014
1015
1016
1017
1018
RM
0.1
um
part
icle
0.5
um
part
icle
1u
mpa
rtic
le
050
100
150
200
Bru
shR
PM
1014
1015
1016
1017
1018
RMdl
0.1
um
part
icle
0.5
um
part
icle
1u
mpa
rtic
le
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
0
200
400
600
800
1000
1200
1400
12
34
Defects #
20 P
SI
60P
SI
Co
nta
ct C
lean
ing
of
Po
lish
ed T
OX
Waf
ers
Co
nta
ct C
lean
ing
of
Po
lish
ed T
OX
Waf
ers
15 s
ec15
sec
60 s
ec60
sec
45 r
pm20
0 rp
m
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
Aco
ust
ic B
ou
nd
ary
Lay
er T
hic
knes
sA
cou
stic
Bo
un
dar
y L
ayer
Th
ickn
ess
�A
cou
stic
bo
un
dar
y la
yer
thic
knes
s:in
wat
er, f
=85
0KH
z, δ
ac=
0.61
µmf=
760K
Hz,
δac
=0.
65µm
f=36
0KH
z, δ
ac=
0.94
µm�
Th
e h
ydro
dyn
amic
bo
un
dar
y la
yer
thic
knes
s:in
wat
er, u
=4m
/s, a
t cen
ter
ofan
8”
waf
er,
δ H=
2570
µm
δ
Vel
ocit
y bo
unda
ry la
yer
Fre
e st
ream
u ∞
u ∞
δ(x)
x
yτ
τ
Vel
ocity
bou
ndar
y la
yer
on a
flat
pla
te
21
ac
2
=
ωνδ
xU
x16
071
H⋅
=ν
δ.
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
Vel
oci
ty P
rofi
le in
a B
ou
nd
ary
Lay
erV
elo
city
Pro
file
in a
Bo
un
dar
y L
ayer
01
23
4
Vel
ocity
(m/s
)
0
500
1000
1500
2000
2500
y(micron)
Lam
inar
flow
Tur
bule
ntflo
wA
cous
ticF
low
(f=
800k
Hz
)
Vel
ocity
Pro
file
x=
4in
ch,
U=
4m/s
01
23
4
Vel
oci
ty(m
/s)
012345678910
y(micron)
Lam
inar
flow
Tur
bule
ntflo
wA
cous
ticF
low
(f=
800
kHz
)
Vel
oci
tyP
rofil
ex
=4
inch
,U
=4m
/s
y =
0~25
00 m
icro
ny
= 0~
10 m
icro
n
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
AC
OU
ST
ICA
CO
US
TIC
ST
RE
AM
ING
S
TR
EA
MIN
G
05
1015
2025
30In
tens
ity(W
/cm
2 )
0
500
1000
1500
2000
2500
v(cm/s)
1M
Hz
850k
Hz
760k
Hz
360k
Hz
Str
eam
ing
Vel
ocity
vs.A
cous
ticP
ower
510
1520
Dis
tanc
eF
rom
Tan
kW
all(
cm)
0
100
200
300
400
v(cm/s)
I=.7
7W/c
m2
I=1.
55W
/cm
2
I=2.
33W
/cm
2
I=3.
10W
/cm
2
I=3.
88W
/cm
2
I=4.
65W
/cm
2
I=5.
43W
/cm
2
I=6.
20W
/cm
2
I=6.
97W
/cm
2
I=7.
75W
/cm
2
f=76
0kH
z
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
�H
ard
par
ticl
es (
silic
a) a
re e
asie
r to
rem
ove
th
an s
oft
par
ticl
es(P
SL
).�
Par
ticl
es la
rger
th
an 2
0nm
can
be
rem
ove
d, b
ut
wh
en e
lect
rica
l do
ub
le la
yer
forc
e is
co
nsi
der
ed, r
emo
val o
f 10
nm
sili
ca p
arti
cle
is p
oss
ible
. �
Hyd
rod
ynam
ic f
low
(at
4m
/s)
did
no
t re
mo
ve P
SL
par
ticl
es s
mal
ler
than
10
um
.
10-2
10-1
100
101
Par
ticle
Dia
met
er(m
icro
n)
10-5
10-4
10-3
10-2
10-1
100
101
102
103
104
RM
SiO
2p
artic
leon
SiO
2,A
cou
stic
(80
0kH
z)
PS
Lp
artic
leon
SiO
2,A
cous
tic(
800
kHz
)S
iO2
par
ticle
onS
iO2,
Hyd
rody
nna
mic
PS
Lp
artic
leon
SiO
2,H
ydro
dyn
nam
ic
Rem
oval
Mom
entR
atio
(RM
)vs
.P
artic
leD
iam
eter
U=
4m
/s(A
cou
stic
Flo
w,8
00
kHz,
7.7
5W
/cm
2)
RM
=1
RM
<1
Rem
oval
<A
dhe
sion
Par
ticle
can
not
bere
mov
ed
RM
>1
Rem
oval
>A
dhe
sion
Par
ticle
will
bere
mov
ed
DIw
ater
,ele
ctri
cald
ou
ble
laye
rfo
rce
isn
eglig
ible
Rem
oval
Mo
men
t
Adh
esio
nR
esis
ting
Mo
men
tR
M=
10-2
10-1
100
101
Par
ticle
Dia
met
er(m
icro
n)
10-5
10-4
10-3
10-2
10-1
100
101
102
103
104
RM
SiO
2p
artic
leo
nS
iO2,A
cous
tic(8
00kH
z)+
SC
1P
SL
par
ticle
onS
iO2,A
cou
stic
(80
0kH
z)+
SC
1S
iO2
par
ticle
on
SiO
2,H
ydro
dynn
amic
+S
C1
PS
Lp
artic
leon
SiO
2,H
ydro
dynn
amic
+S
C1
Rem
oval
Mom
entR
atio
(RM
)vs
.P
artic
leD
iam
eter
RM
=1
RM
<1
Rem
oval
<A
dhe
sion
Par
ticle
can
not
bere
mov
ed
RM
>1
Rem
oval
>A
dhe
sion
Par
ticle
will
bere
mov
ed
SC
-1,e
lect
rica
ldo
ub
lela
yer
forc
eis
rep
uls
eR
emo
valM
omen
t
Adh
esio
nR
esis
ting
Mo
men
tR
M=
U=
4m
/s(A
cous
ticF
low
,80
0kH
z,7
.75
W/c
m2 )
Rem
ova
l/Ad
hes
ion
Mo
men
t R
atio
(R
M)
vs. D
Rem
ova
l/Ad
hes
ion
Mo
men
t R
atio
(R
M)
vs. D
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
Eff
ects
of
Fre
qu
ency
on
RM
Eff
ects
of
Fre
qu
ency
on
RM
DI w
ater
, Ele
ctric
al d
oubl
e la
yer
forc
e is
neg
ligib
leS
C-1
, Ele
ctric
al d
oubl
e la
yer
forc
e is
rep
ulsi
ve fo
rce
101
10
21
03
10
4
Fre
qu
ency
(kH
z)
10
-6
10
-4
10
-2
10
0
10
2
10
4
10
6
RM
RM
no
Fel
(1u
mS
iO2/S
iO2)
RM
no
Fel
(0.1
umS
iO2/S
iO2)
RM
no
Fel
(1u
mP
SL
/SiO
2)
RM
no
Fel
(0.1
umP
SL
/SiO
2)
I=7.
75W
/cm
2E
ffec
tofF
requ
ency
on
RM
RM
=1
RM
<1
Rem
ova
l<A
dhes
ion
Par
ticle
can
not
be
rem
ove
d
RM
>1
Rem
ova
l>A
dhes
ion
Par
ticle
will
bere
mo
ved
DIw
ater
,Ele
ctric
aldo
uble
laye
rfo
rce
isne
glig
ible
101
10
21
03
10
4
Fre
qu
ency
(kH
z)
10
-6
10
-4
10
-2
10
0
10
2
10
4
10
6
RM
RM
(1u
mS
iO2/
SiO
2)
RM
(0.1
um
SiO
2/S
iO2)
RM
(1u
mP
SL/
SiO
2)
RM
(0.1
um
PS
L/S
iO2)
I=7.
75
W/c
m2
Eff
ecto
fFre
quen
cyo
nR
M
RM
=1
RM
<1
Rem
ova
l<A
dhes
ion
Par
ticle
can
not
be
rem
ove
d
RM
>1
Rem
ova
l>A
dhes
ion
Par
ticle
will
bere
mov
ed
SC
-1,E
lect
rical
doub
lela
yer
forc
eis
repu
lse
�T
he
smal
ler
the
par
ticl
es, t
he
hig
her
fre
qu
ency
aco
ust
ic f
low
isn
eed
ed.
�S
oft
par
ticl
es (
PS
L)
are
mo
re d
iffi
cult
to
rem
ove
th
an h
ard
par
ticl
e (s
ilica
), n
eed
ing
alm
ost
an
ord
er o
f m
agn
itu
de
hig
her
fre
qu
ency
.
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
20
03
00
40
05
00
60
0P
ow
er
(Wa
tts
)
10
20
30
40
50
60
70
80
90
10
0
11
0
12
0
Time(sec)
1.0
0
1.0
0
0.9
9
0.98
0.9
8
Sin
gle
Me
ga
so
nic
Cle
an
ing
Pro
ce
ss
,T
em
p=
35
oC
Re
mo
va
lE
ffic
ien
cy
of
Sil
ica
Pa
rtic
les
0.1
≥µ
m
Co
mp
lete
rem
ova
l of
silic
a p
arti
cles
do
wn
to
C
om
ple
te r
emo
val o
f si
lica
par
ticl
es d
ow
n t
o
100n
m is
ach
ieva
ble
by
usi
ng
a s
ing
le w
afer
10
0nm
is a
chie
vab
le b
y u
sin
g a
sin
gle
waf
er
meg
aso
nic
cle
anin
g w
ith
DI w
ater
on
lym
egas
on
ic c
lean
ing
wit
h D
I wat
er o
nly
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
30
35
40
Te
mp
era
ture
(oC
)
10
20
30
40
50
60
70
80
90
10
0
11
0
12
0Time(sec)
1.0
0
0.98
0.96
≥µ
mS
ing
leM
eg
as
on
icC
lea
nin
gP
roc
es
s,
Po
we
r1
69
WR
em
ov
al
Eff
icie
nc
yo
fA
lum
ina
Pa
rtic
les
0.1
Co
mp
lete
rem
ova
l of
alu
min
a p
arti
cles
do
wn
to
C
om
ple
te r
emo
val o
f al
um
ina
par
ticl
es d
ow
n t
o
100n
m is
ach
ieva
ble
by
usi
ng
a s
ing
le w
afer
10
0nm
is a
chie
vab
le b
y u
sin
g a
sin
gle
waf
er
meg
aso
nic
cle
anin
g w
ith
DI w
ater
on
lym
egas
on
ic c
lean
ing
wit
h D
I wat
er o
nly
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
�A
dh
esio
n-i
nd
uce
d d
efo
rmat
ion
can
dra
mat
ical
ly in
crea
se t
he
tota
l ad
hes
ion
fo
rce.
�
Th
e re
mo
val e
ffic
ien
cy o
f p
arti
cles
is s
tro
ng
ly in
flu
ence
d b
y p
arti
cle
def
orm
atio
n.
�m
agn
itu
de
of
the
forc
e o
f ad
hes
ion
bet
wee
n a
par
ticl
e an
d a
su
bst
rate
dep
end
s o
n t
he
con
trac
t ar
ea.
�H
ydro
gen
bo
nd
s an
d c
ova
len
t b
on
ds
pla
y an
imp
ort
ant
role
in
adh
esio
n f
orc
e es
pec
ially
in t
he
pre
sen
ce o
f m
ois
ture
.�
In b
rush
cle
anin
g,
con
tact
bet
wee
n t
he
par
ticl
e an
d t
he
bru
sh i
ses
sen
tial
to
th
e re
mo
val o
f su
bm
icro
np
arti
cles
.
�In
fu
ll co
nta
ct m
od
e, R
M>>
1 fo
r a
0.1-
mic
ron
par
ticl
e is
fo
un
d f
or
typ
ical
bru
sh r
ota
tin
g s
pee
ds
inve
stig
ated
.
�10
0% r
emo
val u
sin
g T
he
bru
sh S
cru
bb
er w
ith
DI w
ater
is
ach
ieve
d u
sin
g w
afer
dip
ped
in s
ilica
slu
rry.
�In
term
edia
te b
rush
pre
ssu
re, s
pee
d a
nd
tim
e g
ave
the
bes
t o
vera
ll p
arti
cle
rem
ova
l eff
icie
ncy
.
NS
F C
ente
r fo
r N
SF
Cen
ter
for
Mic
roco
nta
min
atio
nM
icro
con
tam
inat
ion
Co
ntr
ol
Co
ntr
ol
�B
ecau
se o
f th
e th
in a
cou
stic
bo
un
dar
y la
yer,
hig
h f
req
uen
cy a
cou
stic
st
ream
ing
is e
ssen
tial
to
th
e re
mo
val o
f su
bm
icro
n a
nd
nan
o-s
ize
par
ticl
es.
�T
he
aco
ust
ic b
ou
nd
ary
laye
r th
ickn
ess
dec
reas
es a
nd
th
e st
ream
ing
ve
loci
ty in
crea
ses
wit
h in
crea
sin
g f
req
uen
cy t
her
eby
incr
easi
ng
th
e re
mo
val (
dra
g)
forc
e.�
Th
e re
mo
val o
f n
ano
-siz
e p
arti
cles
(10
-100
nm
) ca
n b
e ac
com
plis
hed
u
sin
g a
cou
stic
str
eam
ing
at
freq
uen
cies
larg
er t
han
1.3
MH
z.�
If a
rep
uls
ive
elec
tric
al d
ou
ble
laye
r fo
rce
is u
tiliz
ed, r
emo
val o
f 10
nm
si
lica
par
ticl
es c
an b
e ac
com
plis
hed
usi
ng
fre
qu
enci
es a
bo
ve 8
00kH
z.
�R
emo
val f
orc
es (
for
the
ran
ge
of
freq
uen
cies
use
d),
�d>
100n
m, t
he a
cous
tic fl
ow d
rag
forc
e is
dom
inan
t;
�30
nm<
d<10
0nm
, dra
g fo
rce
and
elec
tric
al d
oubl
e la
yer
forc
e ar
e eq
uiva
lent
; �
d<30
nm, e
lect
rical
dou
ble
laye
r fo
rce
is d
omin
ant;
�S
oft
par
ticl
es (
such
as
Po
lyst
yren
e L
atex
PS
L)
are
mo
re d
iffi
cult
to
re
mo
ve t
han
har
d p
arti
cle
(sili
ca),
bec
ause
of
adh
esio
n-i
nd
uce
d
def
orm
atio
n, n
eed
ing
alm
ost
an
ord
er o
f m
agn
itu
de
hig
her
fre
qu
ency
.
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