THALES Research & Technology I T & S A e r o s p a c e D e f e n c e Thales Long Wave QWIP Thermal Imagers E. Costard , P. Bois, A. Nedelcu, X. Marcadet (TRT) A. Manissadjian (Sofradir) O. Cocle (Thales Optronique Fr) , R. Craig (Thales Optronics UK) 1) III-V lab presentation 2) How to set up a QWIP detector 3) QWIP Thermal imagers at Thales Catherine MP and SIRIUS IDDCA Catherine XP and VEGA IDDCA 4) Operating temperature Conclusion
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THALES Research & Technology
I T & S A e r o s p a c e D e f e n c e
Thales Long Wave QWIP Thermal ImagersE. Costard, P. Bois, A. Nedelcu, X. Marcadet (TRT)
A. Manissadjian (Sofradir)
O. Cocle (Thales Optronique Fr) , R. Craig (Thales Optronics UK)
1) III-V lab presentation2) How to set up a QWIP detector 3) QWIP Thermal imagers at Thales
Catherine MP and SIRIUS IDDCACatherine XP and VEGA IDDCA
4) Operating temperatureConclusion
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What is Alcatel Thales III-V Lab?
►Web site 3-5lab.fr
JV organizationAlcatel – Thales contract signed on July 1st, 2004
A common Laboratory of 100 R&D professionals Performing industrial R&T on III-V technology
Optoelectronic and microelectronic materials, devices and circuitsFrom basic research to industrial developmentA capacity for prototyping and small scale production
For complementary Alcatel / Thales applicationsHigh bit rate Optical Fibre and Wireless TelecomMicrowave and Optronic systems for Defence, Security and Space
Open to external customers
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Two-site implantation
Alcatel Research and InnovationMarcoussis
Thales Research and Technology Palaiseau
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Epitaxial growth of III-V semiconductors Multi-wafers MBE, GS-MBE, MO-VPE reactors Complex hetero-structures based on GaAs, InP, SiC, GaSb…substrates
AlGaN/GaN HEMT on SiC substrates
Buried EO modulator
GS-MBE reactor
III-V Semiconductors Epitaxy
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Clean-Room Device Processing
Clean room device processingMicroelectronic technologies: lithography, metal and dielectric material deposition and etching, …Microwave and fast digital devices and circuits : InP HBTs, GaN HEMT, …Opto-electronic devices (lasers, modulators, photo-detectors, …)
AlGaN/GaN HEMTs
Photoniccrystals
QWIP FPA
GaInAsphotodiodes
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Measurement, Simulation, Design
Measurement, simulation and designPhysical modelling of microelectronic and optoelectronic devicesLinear and non-linear equivalent circuits Microwave and fast digital circuit design and simulation
Electro-thermalmodelling
Power transistors and HPA MMIC design
40Gb/s (and above) InP HBT ICs
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Modules and DemonstratorsModule and sub-system demonstrators
Optoelectronic modules demonstrators (40Gb/s transceivers, …) Microwave amplifiers demonstratorsOperational reliability evaluations
30W S-band hybrid HPA
60GHz UTCphotodiode
Reliability test bench
Hybridization & FPAs characterization
18GHz direct modulation laser diode
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New Building & Facilities(640x512 QWIP Phoenix picture)
New front end for QWIP R&D and Production
250m² class 1000/100 dedicated clean room
•Moving in July 2005
•Fully operational since March 2006
New RIBER 49 MBE equipment
5x3 inch or 3x4 inch wafers per platen
Uniformity & Reproducibility fully compatible with QWIP production
Faster Transfer to Epitaxial Layer Suppliers
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THALES LW QWIP Camera: CATHERINE-XP
TRT QWIP Product
384x288 ; pitch 25 µm
30 arrays on 3 inch wafer Thales Optronique (France)
VEGA-LW
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THALES LW QWIP Camera: CATHERINE-MP
Thales Optronics (UK)
TRT QWIP Product
640x512 ; pitch 20 µm
16 arrays on 3 inch wafer
SIRIUS-LW
Test cell for E&O QWIP measurement
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FPA Performance: E&O inputs
1.2
0.8
0.4
0.0Spec
tral
resp
onsi
vity
109876Wavelength (µm)
Peak: 8.6 µmFWHM: 0.9 µm
0.4
0.3
0.2
0.1
0.0
Peak
resp
onsi
vity
(A/W
)
-2.5 -2.0 -1.5 -1.0 -0.5 0.0Bias (V)
0.6
0.4
0.2
0.0
Noi
se g
ain
-2.5 -2.0 -1.5 -1.0 -0.5 0.0Bias (V)
10-12
10-11
10-10
10-9
Dar
k cu
rren
t @ 7
7 K
(A)
-2.5 -2.0 -1.5 -1.0 -0.5 0.0Bias (V)
Intrinsic QWIP E&O Characteristics measured on a 23µm pixel
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FPA Performance: Model outputsROIC: pitch 25µm ; C=18.5Me- ; gain=160nV/e- ; noise=160µV
Tbb=300K ; f/2.7 ; ∆T=+50K ; pixel 23.5µm
90
80
70
60
50
40
30
20
10
0
NET
D (
mK
)
-2.0 -1.6 -1.2 -0.8 -0.4 0.0Bias (V)
Tint > 5 ms
Tint < 5 ms
60 K65 K70 K73 K75 K77 K
External Quantum Efficiency is definitively not a relevant parameter for QWIP
40
35
30
25
20
15
10
5
0R
espo
nsiv
ity (m
V/K
)-2.0 -1.6 -1.2 -0.8 -0.4 0.0
Bias (V)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
60 K65 K70 K73 K75 K77 K
R-QWIP
FPA set point for CATHERINE-XP
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SIRIUS-LW-K548: 640×512 20µm pitch IDDCA
Compact dewar designsmall diameter feedthru ceramics (Ø40mm).20 mm height cold shieldaperture up to f/2.2 applications two 21-pin connectors electrical interface
20µm pitch ROIC (Sofradir)four gains (10.3Me- = ×1, ×1.3, ×2, ×4)1/2/4 outputs; IWR; 120Hz frame rate enabling 2×2 microscanning for SXGA format (1280×1024)Image invert/revert/inverse; Random windowingSkimming mode
0.75W K548 by RicorDimensions 142 mm height × 77 mm widthTotal IDDCA weight < 0.65 kg (1.43 lb)
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SIRIUS-LW-K548: E&O performance @ 73KTfpa =73K; f/2.2; gain 1 (10.3Me-); 120Hz; 20°C blackbody Ti = 4ms for +50K instantaneous dynamic range20-35°C Sensitivity: Mean = 23mV/K; σ = 8.5% (No FOV correction)NETD : Mean = 41 mK; σ = 10.9% (FOV corrected)Operability = 99.9% (NETD<2×mean); no cluster of size > 3 pixels
Dead map pixels
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SIRIUS-LW-K548: ready for production
1st Prototypes in 2005 for CATHERINE-MP by Thales Optronics (TOL)affordable and production-ready alternative offered for fighting vehicles and tanks for future UK MOD programmes provides outstanding SXGA (1280×1024) format image quality with the use of microscan
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VEGA-LW-RM4: 384×288 25µm pitch IDDCA
Developed for Catherine-XP FLIR (Thales Optronique)
Highly compact (3 kg)Power consumption and heat dissipation to be minimized
Working point around 75Ksatisfying tradeoff with NETD/detection rangeLowest power consumption & thermal behavior
An improved RM4-7i microcooler (Thales Cryogenics)
Upgrade of RM5-7i, with higher efficiency for lower power consumption (and heat dissipation)
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VEGA-LW-RM4: 384×288 25µm pitch IDDCA
Latest dewar designsmall diameter feedthru ceramics (Ø32mm) for optimizing the compactness of the detector.cold shield up to 20 mm heightaperture up f/2 applications
ISC0208 ROIC (Indigo)four gains (18.5Me-, 13.9Me-, 9.2Me-, 4.6Me-)1/2/4 outputs; IWR>150Hz frame rate enabling 2×2 microscanning for full TV CCIR format (768×575)
0.7W RM4-7i by Thales@ 20°C: CDT < 3 minutes; Preg < 9Wac
Dimensions < 126 mm height × 73.7 mm widthTotal IDDCA weight < 0.55 kg (1.21 lb)
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VEGA-LW: E&O performance @ 75K
Tfpa =75K; f/2.68; gain 2 (13.9Me-); 120Hz; 20°C blackbody Ti = 4ms for +50K instantaneous dynamic range20-35°C Sensitivity: Mean = 12.3mV/K; σ = 3.51% (No FOV correction)
NETD : Mean = 54 mK; σ = 10.5% (FOV corrected)
Operability = 99.9% (NETD<2×mean)
Dead map pixels
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CATHERINE-XP FLIR by Thales Optonique (TOSA)
Full production since 2005 (150 VEGA-LW detectors within 15 months)1000 cameras ordered, Business plan for up to 4000
CV90 (Dutch)
VBL SOURCE (France)
PANDUR (Belgium)
UTASS
VBCI (France)
CATHERINE-XP
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LW QWIP performance vs TFPA in IDDCATi adjusted for +50K instantaneous dynamic range
LW QWIP: Sensitivity versus FPA temperature
134%
100%
80%
119%
15
20
25
30
35
65 66 67 68 69 70 71 72 73 74 75FPA Temperature [K]
20-3
5°C
Sen
sitiv
ity [m
V/K
]
Ti=3.8ms
1.2×Ti
0.82×Ti
1.4×Ti
W F = 10.3Me-f/2.220°CTi for 95% WF @ 70°C
FPA sensitivity in mV/K is proportional to TiBut intrinsic QWIP responsivity is independent on Temperature…………..!
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LW QWIP performance vs TFPA in IDDCA
Ti adjusted for +50K instantaneous dynamic range50-55mK @ 75K40-45mK @ 73K
LW QWIP: NETD v e rsus FPA te mpe rature
79%
132%
100%
68%25
30
35
40
45
50
55
65 66 67 68 69 70 71 72 73 74 75FPA Temperature [K]
NET
D [m
K]
Ti=3.8ms
1.2×Ti
1.4×Ti
0.82×Ti
WF = 10.3Me-f/2.220°CTi for 95% WF @ 70°C
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CONCLUSION
•LWIR QWIPs : 75K and diffraction limited:
NETD< 40mK
Dynamic range > 100K
Integration Time < 5ms
>100Hz in full TV Format
•New facilities for QWIP array production
•Large format and small pitch in production (VEGA & SIRIUS by SOFRADIR)
•R&D up to the FPA level to Extend QWIP Spectral Range (4µm-18µm)
•QWIP are also Natural candidates for large format dual band / dual color FPAs
(640x512 QWIP Phoenix pictures)
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Influence of the Pixel Design on QWIP Performances
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Nor
mal
ized
spe
ctra
l res
pons
ivity
109876Wavelength (µm)
No grating 2D grating150 µm pixels 0.6
0.5
0.4
0.3
0.2
0.1
0.0
Spec
tral
resp
onsi
vity
(A/W
)109876
Wavelength (µm)
2D grating pixel 20 µm pixel 150 µm
No Grating pixel 150µm
Bias=1.2V
FWHM Widerwithout
Optical coupling pattern
Peak Responsivity HigherOn Large Pixels
With Optical coupling pattern
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LWIR QWIP spectral response
Peak = 8.5µm ±0.1µmFWHM < 1.0µm
0102030405060708090
100
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
Wavelength [µm ]A
bsol
ute
trans
mis
sion
[%]
0.4
0.3
0.2
0.1
0.0
Res
pons
ivity
(A/W
)
10.09.08.07.06.0Wavelength (µm)
LWIR QWIPPixel = 19 µm
Bias=1.2V
Measure on IDDCA, after thinning & AR coating
& with IDDCA window
Measure on QWIP wafer, before thinning & AR coating
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QWIPs cover the full LWIR spectrum
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Spec
tral
resp
onsi
vity
(a.u
)
2018161412108
Wavelength (µm)
610-5
2
46
10-4
2
46
10-3
2
Cur
rent
den
sity
(A /
cm2 )
-2.0 -1.6 -1.2 -0.8
Bias (V)
Dark current 45 K 50 K
Optical current
TBB = 280 K, F/2
λC = 15.1 µm
ROIC ISC0208 : 384x288 ; pitch 25µm
Tbb=280K; f/2 (diffraction limited)
dynamics = +30°C
Pixel < 30µm& optimized 2D grating
FPA performance modeling:
Tdet=50K ; λc=15.1µm
NETD = 15 mK
Responsivity = 20 mV/K
Integration Time = 6 mS
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2-D Arrays: Uniformity is more important than D*
12
4
102
4
1002
4
NET
D (m
K)
6 8
1092 4 6 8
10102 4 6 8
10112 4
Détectivité (Jones)
u=0.5%
u=0.2%u=0.1%
u=0.01%
u=0
λpic = 9 µm ; ∆λ = 2 µm pixel = 25 µm ; # = 2 tint= 10 ms ; TB = 300 K
Single Element :Only D* is important
2D Arrays : Uniformity = key factor
2B
2
22
int
2
B
B
B
P*D)#41(
At21u
dTdPP*)D,u(NETD
⋅+
×+×=
Uniformity has to be preserved for each new QWIP quantum design or processing step
27
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QWIP 2006 Sri Lanka
Internal quantum efficiency: Absorption
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Abs
orpt
ion
201816141210864
Wavelength (µm)
VLWIRLWIR
MWIR
4 typical spectral absorption: αpeak > 25% indeed > 60% for MWIR
The Peak absorption can be adjusted (trade-off with operating Temperature)
Uniformity, stability and affordability guaranteed from MWIR to VLWIR
28
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QWIP 2006 Sri Lanka
QWIP nearly cover the MWIR spectrum…
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Spec
tral
resp
onsi
vity
(a.u
)
6.05.55.04.54.03.53.0Wavelength (µm)
Indium free 25% In
Spectral shapes suitable for dual color MWIR FPA
…without exotic nor mismatched material (IDDCA performance: Presentation 6206-14)
1200
1000
800
600
400
200
0
-200C
B p
oten
tial (
meV
)6004002000
Width (Angström)
with indium Indium free25µm pixel& optimized 2D grating
29
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Dual-Band QWIP FPA demonstrated in 2005
MWIR band LWIR bandResponsivityMean responsivity 10.4 mV/K 13.9 mV/K
σ 8.5% 9.9%
operability at 1.5 x mean value 99.04% 99.04%NETDMean NETD 40 mK 39 mK
σ 17% 16%operability at 2 x mean value 99.5% 99.9%
0.6
0.4
0.2
0.0Spec
tral r
espo
nsiv
ity (A
/W)
10864Wavelength (µm)
Batch1: stage1 stage2Batch2: stage1 stage2
25 µm
No Spectral Cross Talk
Even on small Pixels
Dual Band QWIP FPA:
•256x256 pitch 25µm
•IWR mode
•2 color subframe at 100Hz
Sofradir & TRT are developing
a MWIR / LWIR IDDCA
based on a ISC0208 ROIC
(384x288 pitch 25µm)
30
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In House FPA Capability (1/2)
Pulse Instrument system 7700• 4 Preamplifiers • 14 bits A/D (bandwidth ≥ 30Mhz)• 8 clock drivers and 8 bias generators• Easy pattern generation
384x288 QWIP FPAISC0208 ROIC from Indigo
Pitch 25µm
Indium Bump Array
New building Block: hybridization
For Research & Development
Tests in lab dewar (He or LN2)
31
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In House FPA Capability (2/2)LWIR QWIP design: λc = 9 µm ; 384x288, pitch 25 µm
•6 non connected pixels•9 saturated pixels•No Cluster
T=80K without & with 2 point correction
32
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FPA expected performances in VLWIR
610-5
2
46
10-4
2
46
10-3
2
Cur
rent
den
sity
(A /
cm2 )
-2.0 -1.6 -1.2 -0.8
Bias (V)
Dark current 45 K 50 K
Optical current
TBB = 280 K, F/2
λC = 15.1 µm
10-6
10-5
10-4
10-3
10-2
Cur
rent
den
sity
(A /
cm2 )
-2.0 -1.5 -1.0 -0.5 0.0
Bias (V)
Dark current 39 K 43 K
Optical current
TBB = 280 K, F/2
λC = 18.3 µm
ROIC ISC0208 : 384x288 ; pitch 25µm
Tbb=280K; f/2 (diffraction limited)
dynamics = +30°C
Tdet=50K ; λc=15.1µm
NETD = 15 mK
Responsivity = 20 mV/K
Integration Time = 6 mS
Tdet=40K ; λc=18.3µm
NETD = 22 mK
Responsivity = 16 mV/K
Integration Time = 8.5 mS
33
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QWIP 2006 Sri Lanka
2 color (LW/LW or MW/LW) QWIP arrays
+ V1 + V2Signal
ROIC designed for:•2 color subframe at 100Hz •Optimized FPA temperature
Dual color QWIP FPA
256x256 pitch 25µm
IWR mode
25 µm
Spatial correlation(details of a 2 color QWIP array)
34
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256² MWIR–LWIR FPA demonstrator
MWIR band LWIR bandResponsivityMean responsivity 10.4 mV/K 13.9 mV/K
σ 8.5% 9.9%
operability at 1.5 x mean value 99.04% 99.04%NETDMean NETD 40 mK 39 mK
σ 17% 16%operability at 2 x mean value 99.5% 99.9%
0.6
0.4
0.2
0.0Spec
tral r
espo
nsiv
ity (A
/W)
10864Wavelength (µm)
Batch1: stage1 stage2Batch2: stage1 stage2
Histogram of responsivity in LWIR band(Tfpa=70K - Tbb=20/30°C - tint=3ms)
-
4 000
8 000
12 000
16 000
20 000
5,1 7,8 10,4 13,0 15,6 18,2 20,8
respnsivity (mV/K)
Nb
of p
ixel
s
0%
20%
40%
60%
80%
100%
Ope
rabi
lity(
%)
responsivity (mV/K)operability (%)
LWIR bandHistogram of responvity in MWIR band (Tfpa= 70K - Tbb=20/30°C - tint=5ms)
-
4 000
8 000
12 000
16 000
5,1 6,7 8,3 9,9 11,5 13,1 14,7
responsivity (mV/K)
Nb
of p
ixel
s
0%
20%
40%
60%
80%
100%
Ope
rabi
lity
(%)
resp mV/K)operability (%)
MWIR band Responsivity
35
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QWIP 2006 Sri Lanka
256² LWIR–LWIR FPA demonstrator
LWIR1 band LWIR2 bandResponsivityMean responsivity 9.4 mV/K 8.9 mV/K
σ 7.6% 9.3%
operability at 1.5 x mean value 99.8% 99.8%NETDMean NETD 50 mK 59 mK
σ 15.9% 12.4%operability at 2 x mean value 99.5% 99.4%
LWIR2 bandLWIR1 bandResponsivity Histogram in LWIR band
(Tfpa=65K - Tbb=20/30°C - F/1.6)
-
2 000
4 000
6 000
8 000
10 000
0,2 2,6 5,0 7,4 9,8 12,2 14,6
responsivity (mV/K)
Nb
of p
ixel
s
0%
20%
40%
60%
80%
100%
Ope
rabi
lity
(%)
réponse(mV/K)operabilité cumulée (% )
Responsivity
1.0
0.8
0.6
0.4
0.2
0.0Spec
tral r
espo
nsiv
ity (A
/W)
121086
Wavelength (µm)
Batch3: stage1 stage2Batch4: stage1 stage2
36
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QWIP 2006 Sri Lanka
256² pitch 25µm Dual-Color LWIR FPA demonstrator
1.0
0.8
0.6
0.4
0.2
0.0Spec
tral r
espo
nsiv
ity (A
/W)
121086
Wavelength (µm)
Batch3: stage1 stage2Batch4: stage1 stage2
LWIR1 band LWIR2 bandResponsivityMean responsivity 9.4 mV/K 8.9 mV/K
σ 7.6% 9.3%
operability at 1.5 x mean value 99.8% 99.8%NETDMean NETD 50 mK 59 mK
σ 15.9% 12.4%operability at 2 x mean value 99.5% 99.4%
Dual Color QWIP FPA:
•256x256 pitch 25µm
•IWR mode
•2 color subframe at 100Hz
Negligeable Spectral Cross Talk
Even on small Pixels
37
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QWIP 2006 Sri Lanka
MBE equipment: RIBER 49
24 36 48 60 72 84 9646.5
47.0
47.5
48.0
48.5
49.0
+ 0.5 Å
QW
th
ickn
ess
(Å
Time (h)
- 0.5 Å
24 36 48 60 72 84 9627.0
27.5
28.0
28.5
29.0
29.5
- 0.2 %
Al m
ole
frac
tion
(%)
Time (h)
+ 0.2 %
5 6 7 8 9 10 11 12-0.1
0.0
0.1
0.2
0.3
0.4
Ab
sorp
tio
n (
a.u
.)
Wavelength (µm)
A B C D
The Tool for R&D QWIP:
Uniformity
Reproducibility over a full week
5X3 inch wafers per platen
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