2017.07.03 Technology Trend of Ultra-High Data Rate Wireless CMOS Transceivers Akira Matsuzawa and Kenichi Okada Tokyo Institute of Technology
2017.07.03
Technology Trend of Ultra-High Data Rate Wireless CMOS Transceivers
Akira Matsuzawa and Kenichi Okada
Tokyo Institute of Technology
1Contents• Demand for high speed data transfer• Developed high data-rate mm Wave transceivers
– ISSCC 2012: 10Gb/s 16QAM– ISSCC 2014: 28Gb/s 4ch 16QAM, 64 QAM– ISSCC 2016: 56Gb/s 68-102 GHz, 16QAM
• High data-rate circuit design– Widely flat frequency characteristics– Low phase noise QVCO
• Conquer the fmax limit of CMOS: 300 GHz Tx• Future prospect of high data-rate wireless systems• Summary
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
2
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Demand for high speed data transfer
3Progress of data rate in 60 GHz TRX
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Developed by our group
Other groups
Dat
a ra
te [G
b/s
]
Published year2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
30
20
10
0
40
50
60
Career frequency is L. T. 100 GHz
4Transfer time vs. Data capacity
2017.07.03
1 10 100 1000 10000
AudioCD
VisualDVD
Magazine
Tran
sfer
tim
e (s
ec)
0.01
0.1
1
10
100
1,000
10,000
0.001
200 Mbps
7 Gbps Millimeterwave
Currentwireless
Data capacity [M Byte]
20 Mbps
1Byte=8bit
Transfer time of big contents can be reduced by increasing the data-rate.Millimeter wave can realize several second transfer of movie film in DVD.
Book
AWAD A. Matsuzawa, Tokyo Tech.
5
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Our developed high data-rate mm Wave transceivers
6
0
500
1000
1500
2000
2500
2010 2015 2020 2025 2030
fT
CMOS
GaAsInP
0
500
1000
1500
2000
2500
2010 2015 2020 2025 2030
fmax
CMOS
GaAsInP
Bulk CMOSUltra-Thin-Body Fully-Depleted (UTB FD) SOIMulti-Gate MOSFETs
High freq. operation of semiconductor devices
fT and fmax of CMOS are increased by technology scaling
cffG max
max sgmT
c RRgffNF
3.11min
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
7
2017.07.03
Ultra-high speed data transfer in 60GHz band
BW: 1.8GHz, 4ch
BPSK: 1.7 GbpsQPSK: 3.5 Gbps16QAM: 7 Gbps64QAM:10.5Gbps
I
Q16QAM
BWNDrate
Wider BW and high # of bits are required
AWAD A. Matsuzawa, Tokyo Tech.
860GHz CMOS transceiver attained 28Gbps
2017.07.03
PA
60GHzQILO
LNA
I Mixer
Q Mixer
LO buf.
RF amp.
I Mixer
Q Mixer
LO buf.60GHzQILO
20GHzPLL
TX Output
I Q
I Q
BB amp.
RX Input
RF amp.
controllogic
*K. Okada, , A. Matsuzawa., ISSCC 2014Direct conversion 60GHz CMOS transceiver
AWAD A. Matsuzawa, Tokyo Tech.
9Chip photo
2017.07.03
PAQ MIXER
I MIXER
LO BUF.
LO BUF.
Q.OSC.
Logic
PLL
LNAI MIXER& RF amp
LO BUF.
LO BUF.
Q.OSC.
RX
BB
outTX
out
RX
inTX BB in
4.2mm
AreaTX 1.03mm2
RX 1.25mm2
PLL 0.90mm2
Logic 0.67mm2
CMOS 65nm, 1Al+11CuTX: 186mWRX: 155mWPLL: 64mW
Q MIXER& RF amp
FUJITSU 65nm CMOS
TX: 186mWRX: 155mWPLL: 64mW
AWAD A. Matsuzawa, Tokyo Tech.
10Measured characteristics
2017.07.03
Channel/Carrier
freq. ch.1
58.32GHz ch.2
60.48GHz ch.3
62.64GHz ch.4
64.80GHz ch.1-ch.4
Channel bond
Modula- tion
64QAM 16QAM
Data rate* 10.56Gb/s 10.56Gb/s 10.56Gb/s 10.56Gb/s 28.16Gb/s
Constella-tion**
Spec- trum**
TX EVM** -27.1dB -27.5dB -28.0dB -28.8dB -20.0dB TX-to-RX EVM*** -24.6dB -23.9dB -24.4dB -26.3dB -17.2dB
-50-40-30-20-10
0
55.82 58.32 60.82-50-40-30-20-10
0
57.98 60.48 62.98-50-40-30-20-10
0
60.14 62.64 65.14-50-40-30-20-10
0
62.30 64.80 67.30-50-40-30-20-10
0
55.56 58.56 61.56 64.56 67.56
World's first 64QAM World’s fastest 28Gbps
AWAD A. Matsuzawa, Tokyo Tech.
11Chip with antenna in package
The 60GHz RF chip are mounted on the antenna in package
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
12Recent developed 60GHz transceiver set
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Small size 60GHz transceiver set has been developed.It attains 6Gbps data transfer.
Smart phone
Gate
13Challenge for Frequency Interleave (FI)
fLO
fLO
28GH
z
3GH
z
fLO1
fLO2
fLO1 fLO2
3GH
z
16GH
z
Conventional
Relaxed BB design Higher SNR Many challenges
This work
3GH
z
16GH
z
ISSCC 2016, K. K. Tokgoz, K. Okada, A, Matsuzawa
14Die Photo of W-Band TRX
65nm CMOS
3mm
2mm
Tripler In34G
Hz
DoublerIn34G
Hz
RX HB Out RX LB OutRX In
TX HB In TX LB InTX Out
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
15Comparison Table
[4] K. Okada, et al., ISSCC2014 [5] S. Kang, et al., RFIC2014 [6] S.V. Thyagarajan, et al., RFIC2014[7] Y. Yang, et al., RFIC2014 [8] R. Wu, et al., ISSCC2016.13.62017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Our group
Reference [5, 6] [7] [4] [8] This work
Integration TX, RX TX, RX TX, RX TX, RX TX, RX
Frequency[GHz] 240 155 57-66 57-66 68-102
Data Rate 16Gb/s(QPSK)
20Gb/s(QPSK)
28.16Gb/s(16QAM)
42.2Gb/s(64QAM)
56Gb/s (16QAM)
TRX Architecture
TX: HeterodyneRX: Direct
Conversion
Hetero-dyne
Direct Conversion
DirectConversion+FrequencyInterleave
Heterodyne+FrequencyInterleave
Technology 65nm CMOS
45nm SOI
65nm CMOS
65nm CMOS
65nm CMOS
Power Cons. [mW]
TX: 220RX: 260
TRX: 345
TX: 251RX: 220
TX: 544RX: 432
TX: 260RX: 300
16
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
High data-rate circuit design
17High data rate techniques
2017.07.03
Shannon’s theory
NSBWDrate 1log2
Wider bandwidth and higher SNR are required to attain higher data rate
Wider bandwidth
Multi-cascaded amplifier
Frequency interleaving
Higher SNR7 bit ADC
Injection locked I/Q oscillator
AWAD A. Matsuzawa, Tokyo Tech.
Passive mixer circuit
18Effect of the gain flatness
2017.07.03
Poor gain flatness makes ISI (Inter Symbol Interference)due to different gain for plus frequency and minus frequency.
AWAD A. Matsuzawa, Tokyo Tech.
19Multi-cascaded RF amplifiers
2017.07.03
4-stage PA MIM TL
to antenna
MIM TLTL
4-stage CS-CS LNA
from antenna
W=1m x40 1m x40 2m x20 2m x20
ESD protection
Multi-cascaded RF amplifier can increase the gain flatnessdue to the distributed resonant frequencies.
AWAD A. Matsuzawa, Tokyo Tech.
20Mixer circuit in TX
2017.07.03
LO+
LO+
LO-
50
To PA BBinput
200
200
Matching
network
Rf
Rf
ZRF
ZRF
RSW
RSW
RSW
RSW
Zin
Zin
LORFSWin ZRZ
Re8//200)( 2
Passive mixer with resistive feedback RF amplifier can realizeWidely flat impedance, rather than LC impedance matching method.
AWAD A. Matsuzawa, Tokyo Tech.
21Measured gain of TX circuit
2017.07.03
05
1015202530
0.00 1.08 2.16 3.24 4.32
Gai
n [d
B]
Frequency [GHz]
The gain flatness of 2 dB is attained for the band width of 4 GHz.
AWAD A. Matsuzawa, Tokyo Tech.
22Required phase noise of IQ-VCO for 16QAM
0
1
2
3
4
5
-100 -98 -96 -94 -92 -90 -88 -86 -84
AM-AM of PA
16QAM8PSK
QPSKR
equi
red
CN
R [d
B]
Phase noise [dBc/Hz] @ 1MHz offset
0
1
2
3
4
5
-100 -98 -96 -94 -92 -90 -88 -86 -84
AM-AM of PA
16QAM8PSK
QPSKR
equi
red
CN
R [d
B]
Phase noise [dBc/Hz] @ 1MHz offset
A phase noise of LT. -90dBc/Hz@1MHz is required for 16QAM systems
K. Scheir, et al., ISSCC, pp. 494-495,Feb. 2009.
A reported phase noise of 60GHz IQ VCO is -76dBc/Hz @1MHz at most
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
23Q of inductors and capacitor
2017.07.03
Q of capacitor is rapidly degraded with frequency.Q of Less than 10 at 60 GHz at most.Low phase noise 60 GHz VCO is hard to be realized.
0
10
20
30
40
50
60
0.1 1 10 100
Q
Frequency [GHz]
8nH inductor2nH inductor
0.2nH inductor
switched capacitor
Qc < 10 @ 60GHz
AWAD A. Matsuzawa, Tokyo Tech.
24Injection locking technique
OutputINJP
INJN
Injectionsignal
N: Multiple number
t
t
parallel injection
)log(20INJILO NPNPN 9.5dB @ N=3
IIOSC
injoL Q
ff 2
Injection locking technique is a very important circuit techniquefor high frequency signal generation and frequency divider.Phase noise of the oscillator is mandated by the injection.
Phase noise
Locking frequency range
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
25Injection locked 60GHz I/Q VCO
2017.07.03
Developed the injection locked 60 GHz quadrature VCOThe 60 GHz quadrature VCO is injected by 20 GHz PLL
A. Musa, K. Okada, A. Matsuzawa., in A-SSCCDig. Tech. Papers, pp. 101–102, Nov. 2010.
XtalPLL
20GHzVCO
Injectionpulse
60GHz I
60GHz Q
60GHzIVCO
60GHzQVCO
MdBPNdBPN INJOSC log20)()(
AWAD A. Matsuzawa, Tokyo Tech.
26Low phase noise can be realized
A. Musa, K. Okada, A. Matsuzawa., in A-SSCCDig. Tech. Papers, pp. 101–102, Nov. 2010.
Quadrature injection locked 60GHz oscillator with 20GHz PLLLow phase noise of -96dBc/Hz @1MHz. Previous one is -76dBc/Hz@1MHz
58-63GHz, -96dBc/Hz-1MHz offsetBest phase noise is achieved.
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
27
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Conquer the fmax limit of CMOS
300 GHz Tx
Prof. Fujishima’s group’s work of Hiroshima Univ.
28CMOS 300GHzTransmitter
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
K. Takano, et al., Hiroshima Univ., ISSCC 2017, S17.9
IF
IF
LO SquareMixer
Balun
RF300 GHz
10 GHz
10 GHz
48 GHz
Tripler
Quasi-SSBMixer
145 GHz3
2LOIF GHz10145
2LOIF
It is almost impossible to amplify the 300 GHz signal by CMOS technology.The 2nd step-up mixer is used and combine the signal in the balun.To increase the RF power. The image suppression is needed.
29Performance comparison
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Comparable frequency with compound semiconductor devices.Over 100 Gbps has been attained.
K. Takano, et al., Hiroshima Univ., ISSCC 2017, S17.9
30
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.
Future prospect of high data-rate wireless systems
31Calculations for data rate of TRX
2017.07.03
SNRBWDrate 1log2Shannon’s theory
3
)(3.0
log10 dBSNRBWSNRBWDrate
LOSSLARATOFFTXRX SIGGBPdBP )(
c
cLOSS df
cdfc
dS
4log20
4log20
4log20
NFBWdBmPn log10174)(
Received signal
Spatial loss
d: distancefc: career frequency
Noise
Calculate the data rate as function of career frequency and Tx power
AWAD A. Matsuzawa, Tokyo Tech.
3260GHz Link budget (QPSK)
2017.07.03
6dBm(Pout)-4dB(back-off)=2dBm
-80.6dBm=-174dBm(kT)+93.4dB(2.2GHz-BW)
-74.6dBm+6dB(NF)
-60.5dBm-3dB(loss)
CNR+14.0dB
Tx
Rx
-71.5dB(1.5m loss)+6dBi(Tx)+6dBi(Rx)
Required CNR: 9.8dB
Antenna gain:6dBi
AWAD A. Matsuzawa, Tokyo Tech.
Phase noisePA nonlinearityI/Q mismatchISI
Suppress
33Estimated data rate
2017.07.03
0
50
100
150
0 10 100 1000
Dat
a ra
te (G
bps)
Carrier frequency (GHz)
Pt=20dBm
Pt=10dBmPt=0dBm
BPSK
QPSK
16QAM
64QAM
Dashed line: consider the SNRSolid line: neglect the SNR
Distance:1mAntenna gain:6dBiNF: 6dBBack off: 4dBPower loss: 3dB
AWAD A. Matsuzawa, Tokyo Tech.
Higher data rate can be expected up to the certain frequency,however it is reduced after that frequency.Higher power is required to increase the data rate.
34Future direction
2017.07.03
High frequencyand high power Best, but very difficult !!
High frequencybut low power
High gainantenna
Low gainantenna
Sharp beam
Fixed point only !
Short distance only !
Medium frequencybut high power
Reasonable high data rate
Reasonable long distance
Future direction should be chosen by the usage model
AWAD A. Matsuzawa, Tokyo Tech.
35Summary
2017.07.03 AWAD A. Matsuzawa, Tokyo Tech.