12 November 2009 Technology and Applications for InP-based Photonic Ics OIDA December 1, 2009 Larry A. Coldren ECE and Materials Departments University of California, Santa Barbara, CA 93106 [email protected]
12 November 2009
Technology and Applications for
InP-based Photonic Ics
OIDA
December 1, 2009
Larry A. Coldren
ECE and Materials Departments
University of California, Santa Barbara, CA 93106
12 November 2009
Maximum configuration for CRS-1: 92 Tbps 72 line card shelves + 8 fabric shelves
~1 Megawatt!!!
• Problem: Bandwidth demands scaling faster than both silicon and
cooling technologies
State-of-the Art Electronic Terabit IP Router
Cisco CRS-1 Router
12 November 2009
Some of our Earliest and Latest
Functional PICs
12 November 2009
SGDBR-SOA-Modulator PIC (the earliest)
6 section InP chip
Light
Out
Front
Mirror Gain PhaseRear
Mirror
SG-DBR Laser
AmplifierEA
Modulator
MQW active regionsQ waveguide
Light
Out
Front
Mirror Gain PhaseRear
Mirror
SG-DBR Laser
AmplifierEA
Modulator
MQW active regionsQ waveguide
SGDBR+X: Foundation of PIC work at UCSB
(UCSB’90-- Agility’99-’05 JDSU’05)
JDSU-ILMZ recently released as TOSA
• SOA external to cavity provides power control
• Both EAM and MZ modulators integrated
―Multi-Section Tunable Laser with Differing Multi-Element
Mirrors,‖ US Patent # 4,896,325 (January 1990)
13dBm
16dBm
19dBm FIBER POWER
192 193 194 195 196Channel Frequency (THz)
45
50
55SMSR (dB)
-140
-150
-160
RIN (dB/Hz)
1
2
3(MHz)
OFC 2003
12 November 2009
4.25
mm
14.5 mm
Recent PIC: MOTOR Chip (the latest)
Wavelength Converter Array Arrayed-Waveguide Grating Router
• A monolithic tunable optical router (MOTOR) chip to function as the
switch fabric of an all-optical router
– Line rate: 40 Gbps / channel
– Total capacity: 640 Gbps
– Error-free operation
• Photonic integration technologies designed for high-yield, large-
scale applications
Steven C. Nicholes, M. L. Mašanović, E. Lively, L. A. Coldren, and D. J. Blumenthal,
IPNRA ’09, Paper IMB1 (July, 2009); also JLT, (Jan. 2010) in press.
12 November 2009
Leading Edge of Monolithic Integration
UC
SB
09
12 November 2009
640 Gbps MOTOR
Benefits of integrated solution:
Size• Smaller device footprint• Smaller rack space for increased bandwidth
Power• No power required in passive AWGR (free switching—no transistors)• Lower power consumption with all-optical approach
Cost• Reduced packaging and system costs• Fewer fiber alignments
Performance • Increased reliability
Wavelength Converter Array Arrayed-Waveguide Grating Router
PRBS 231-1
Wavelength Conversion and Routing Performance
• BER < 1E-9 achieved for
conversion and routing
• Power penalty (BER 1E-9):
– 10 Gbps NRZ > 1.3 dB
– 40 Gbps RZ:
• PRBS 27-1 > 3.5 dB
• PRBS 231-1 > 4.5 dB
• Extinction ~ 11.2 dB
Key Results: WC
PRBS Data at λ1 IN Data at λ2 OUT
to BERT
PRBS 231-1 PRBS 27-1
No AR coatings; low Psat Preamp SOAs
12 November 2009
Integration Strategy
12 November 2009
Integration Platform
• Strategy:
1. Centered MQW base structure
2. Quantum-well intermixing for
active/passive definition
3. Single blanket cladding regrowth
• Trade-offs:
1. Limited total number of regrowths
need multiple waveguide
architectures
2. Efficient active diodes higher
passive losses due to Zn in cladding
3. Efficient high-gain, low-saturation
power elements nonlinear
preamplifiers
4. Polarization sensitivity
Substrate
Active
MQW
Region
Intermixed
Passive
MQW
Region
Quaternary
Waveguide
UID InP
QWI Layers
12 November 2009
Multiple Waveguide Architectures
• Need multiple waveguide designs to integrate diverse
range of components
Waveguides
Surface Ridge
• Ridge defined through p-type
cladding and stops at waveguide
layer
– Dry etch + selective ―cleanup‖ wet
etch
– Wet etch is crystallographic no
bends over ~15°
WaveguideDeeply Etched Ridge
• Ridge defined through waveguide
layer
– Dry etch only
– Strong lateral confinement
sharp bends possible
Waveguide
Substrate
AirInP:Zn Cladding
WaveguideQWs + Barriers
Waveguide
12 November 2009
Rib waveguide
Substrate
InP:Zn Cladding
QWs + Barriers
Multiple Waveguide Architectures
Waveguides
Buried Rib
• Partial etch into upper waveguide
prior to cladding regrowth, which
buries it
– Low index contrast
Larger footprint
– Dry etch due to high-angle bends
Waveguide
Need short mode transition elements to maximize coupling between waveguide regions
12 November 2009
QWI Implant Buffer for Low-Loss Waveguides
• Use QWI implant buffer to provide
undoped setback layer between
optical mode and Zn atoms
• Simulated reduction in optical loss:
– Deeply-etched > Buried rib
– No lateral mode interaction with
Zn doped cladding
Buried Rib (AWGR):
Deeply-Etched Ridge (Delay Line):
Actual buffer
thickness used
12 November 2009
Transitions Between Waveguide Designs
• ―Mode matching‖ transition [1]
– Surface ridge flares and tapers before
deep ridge section
– No lateral misalignment issues
Top View Side View
Surface-to-Deep Ridge Transition
• Flared/tapered butt-couple transition
– Surface ridges flares and butt
couples to tapering rib waveguide
– Fairly tolerant to lateral and
longitudinal misalignment
Surface-to-Buried Rib Transition
Ridge
Rib
[1] J. H. den Besten et al., Photon. Tech. Lett., vol. 14, Jan. 2002
Waveguide
Flare
12 November 2009
Other PICs
12 November 2009
Transceiver/wavelength-converter: 2-stage-SOA-PIN & SGDBR-TW/EAM
• Data format and rate transparent 5-40Gb/s
• No filters required (same l in and out possible)
• On-chip signal monitor
• Two-stage SOA pre-amp for high sensitivity,
efficiency and linearity
• Traveling-wave EAM with on chip loads
• Only DC biases applied to chip—photocurrent
•directly drives EAM
• 40 nm wavelength tuning range
M. Dummer et al. Invited Paper Th.2.C.1, ECOC 2008.
Eye Diagrams
12 November 2009
Coherent Receiver for Phase Modulated SignalsOPLL—NEED for PICs & close integration/EICs
Large-signal
modulationOpen loop
Closed loop
0
0.5
1
Tran
smiss
ion
MZ phase (rad)
Ph
oto
cu
rre
nt
Signal – LO phase difference
• Signal mixed with LO to demodulate optical phase– Detected photocurrent ~ signal-LO phase difference
– Response is sinusoidal
• With feedback, output reduced by the loop gain: 1/(1+T)
– Hybrid integrated EIC* provides amplification
– Operation within linear regime
– NEED VERY SHORT FEEDBACK PATH
is ~ sin(signal - LO)
L.A. Johansson, H.F. Chou, A. Ramaswamy, L. A. Coldren, and J.E. Bowers, ―Coherent optical receiver
for linear optical phase demodulation,‖ Proc. MTT-S Microwave Sym., Tu3D-01 (June, 2007).
PD 1
PD 2
Interconnect
Surface ridge
Homodyne:
Close collaboration with NGST
12 November 2009
Integrated Coherent Receiver Results
J. Klamkin, et al, JSTQE, 44 (4) pp354-359 (Apr., 2008).
QW
Barrier
Absorber
1D mode profile
p+ InGaAs Absorbern-InP Collector
InGaAsP MQW and
Waveguide
I1 dB = 80 mA
Waveguide-UTC saturation currents PD B
f = 1 GHz
Waveguide-UTC two-tone
OIP3
Record OIP3 for waveguide PD
= 46.1 dBm at 60 mA (PD B)
-5 dB
Receiver gain
A. Ramaswamy, et al, JLT, 26 (1) pp209-216 (Jan., 2008).
1.4 GHz OPLL BW—Loop delay limited
SFDR = 131 dB-Hz2/3 @ 300 MHz
TransmissionReflection
FTIR Trench
EIC
PIC
Phase II
12 November 2009
Phase-Locked SGDBRs/OPLL
Gain PH BM FM
Gain PH BM FM
D
D
D
D
D D Photodetector
Modulator M M
M
M
M
M
M SOA
SOA SOA SOA
SG-DBR 2
SG-DBR 1
S. Ristic, et al, OFC ’09, PDPB3, San Diego, (Mar., 2009)
15201540
15601580
0
20
40-100
-50
0
Wavelength (nm)
Detu
ning (n
m)
Op
tical
Po
wer
(dB
m)
Quasi-continuous
phase-locked digital
tuning up to 5 THz
offsets possible
0
0.5
1
1.5
2
0 1 2 3 4 5 6 7
OPLL lockedOPLL unlocked
Mo
nito
r p
hoto
curr
en
t (m
A)
Phase modulator current (mA)
Coherent interference at monitor
verifies phase locking
iPM
i mo
nit
or
12 November 2009
OPLL’d SGDBRs—Heterodyne
► EA modulator used to generate 5 GHz offset frequency
► Slave laser locked to modulation sideband
► Coherent beat observed
– 0.03 rad2 phase error variance in +/-2GHz BW estimated from captured spectrum
► Up to 20 GHz offset locking demonstrated
Master
Laser Optical output
Slave
Laser
2x2 coupler
Envelope
Detector
Modulator
Loop Filter RF offset
-70
-60
-50
-40
-30
-20
-10
4 4.5 5 5.5 6
De
tect
ed
RF
po
we
r (d
Bm
)
Frequency (GHz)
locked
unlockedRistic et al: JLT v.28 no.4, 2010, in press,
also at MWP2009, paper Th 1.5
Loop BW
= 270 MHz
12 November 2009
Additional OPLL Applications/Challenges
PLL
PM input
Coherent receiver
Costa’s Loop for BPSK, QPSK demodulation
No requirement for complex DSP circuits
Challenge: Develop receivers for high speed (>100Gbaud) or high constellations (n-QAM)
Matched with development of coherent sources
LIDAR
Very rich/challenging area
Locking tunable lasers
Arrays of locked OPLLs
Swept microwave reference
Time / Phase encoding of directed output
Need for rapid scanning and locking rates
mmW / THz generation
Locking of two tunable lasers
Requires Integration of high-speed UTC photodiode
Speed determined by UTC photodiode and feedback electronics: Can be very high
Combined with antenna designs for complete TRX links with free-space path
PLL
PLL
PLL
PLL
PLL
mmW modulated
optical out
All require close integration of electronics with photonics
12 November 2009
Programmable Photonic Lattice Filters
• Demonstrate programmable poles and zeros from a single unit cell
that can be cascaded to form complex lattice filters
• Incorporate SOAs and Phase Modulators to control filter parameters
3 4
Single Unit Cell
Active Passive
N-InP substrate
P-InP cladding
1.3Q InGaAsP Waveguide
7x6.5nm
QW
Offset Quantum Well Platform Deeply Etched Waveguide
See E.J. Norberg, R.S. Guzzon, S. Nicholes, J.S. Parker, and L. A. Coldren, “Programmable photonic filters fabricated with deeply etched waveguides,” IPRM ’09, paper TuB2.1, Newport Beach (May, 2009)
12 November 2009
Current into
Ring PM
Current into
Feed forward PM
S21 MZI response tuned in frequency (wavelength)
• FIR filter response synthesized with MZI
– Ring SOA reversed bias – no optical feedback from
resonator
• SOA on feed forward arm used to tune zero amplitude
– ~14dB maximum extinction ratio (ER)
– Parasitic frequency shift due to current injection in SOA• Use phase modulators (PM) to align filter response
• Phase modulators used to tune filter in frequency
– 270GHz (110% of FSR) total tunability of MZI response
Single Unit Cell – Isolated Zero
S21 MZI response – with PM
SEM of Single Unit Cell Filter
3 4
OSAASE source
λ
Schematic of measurement
λ
S21 MZI response – without PM
12 November 2009
43
LCARF modulated Laser
+ω0-ω0ω
26.5dB
• IIR filter response synthesized with ring resonator
– S43 or S21 with feed forward SOA reversed biased
• SOA in ring resonator used to tune pole amplitude
– ~18dB of ER, FWHM=0.067nm (7.9GHz), Q=23,000,
50 GHz frequency tunability
• RF filter response measured with Lightwave
Component Analyzer
– Characteristic π phase shift
• Enhancing ER by utilizing both zeros and poles
– >25dB extinction by placing zero in between poles
Single Unit Cell – Isolated Pole
Schematic of measurement
SEM of Single Unit Cell Filter
43
OSAASE source
λ
λ
S43 Pole response tuned in amplitude S21 Pole + Zero responseS43 RF Pole response
3 4
OSAASE source
λ
λ
Single Unit Cell – Pole and Zero
12 November 2009
• Resonator in/out coupling with Etched Beam
Splitters (EBS)• EBS coupled ring resonator in InGaAsP demonstrated
for the first time
• Pole response• E.g. Biased 20mA (Ith=23mA)
• FWHM of 7GHz, Q=27500
• EBS power splitting ratio• R=55~60%, T=2.9~3.2%
• Back calculated from resonator response
and measured relative splitting ratio
Flattened Ring Unit Cell
Measured and Simulated Resonator Pole Response –
Varied Ring SOA Current (curves shifted for clarity)
4
Tunable Laser
λ
Onchip
detector
Schematic of measurement
43
Nitride for contact insulationNitride for contact insulation
12 November 2009
Summary
• Illustrated medium-scale highly-functional PIC integration technology
requiring only one blanket regrowth. – Indicated usefulness of quantum-well intermixing for integrating high-confinement active
regions with low-loss passive regions.
– Demonstrated efficient, robust techniques to integrate very different lateral waveguides
together.
• This technology provided largest and most complex PIC ever (at least for
UCSB).– Performance adequate for many digital photonic switching functions
– Prior work has shown that the addition of one more blanket regrowth can greatly
enhance the performance of such PICs
• Illustrated other functional InP-based PICs– All-photonic transceivers using photocurrent-driven modulators
– Coherent receiver using an optical phase-locked loop for phase-modulated rf-photonics
– Locking of SGDBRs for mmW - THz generation using an OPLL + other possibilities
– Programmable photonic lattice filters