technical datasheet - MicroChemicals · should be HMDS primed prior to coating AZ 12XT. Contact your AZ product representative for detailed information on pre-treating with HMDS.

APPLICATION

Thick chemically amplified photoresists featuring aspect ratios and photospeed not possible with conventional DNQ type materials. These photoresists expose and develop very quickly for improved equipment productivity and reduced chemical usage.

• Excellent environmental stability• No post bake rehydration delays required • Single coat thicknesses from 3.0 to >20µm• Excellent for Through Silicon Via (TSV), plating, and RIE etch

applications.

TYPICAL PROCESS

Soft Bake: 110ºC/120sRehydration Hold: NoneExpose: 365nm sensitivePost Expose Bake: 90ºC/60sDevelop: Puddle, spray or immersion Developer Type: MIF

* PEB is required for proper imaging

SPIN CURVES (150MM Silicon) OPTICAL CONSTANTS*

Cauchy A 1.535

Cauchy B (µm2) 0.019251

Cauchy C (µm4) -0.00112

n @ 633nm 1.5762

k @ 633nm 0.00

* Unexposed photoresist film

COMPANION PRODUCTS

Thinning/Edge Bead RemovalAZ® EBR Solvent or AZ® EBR 70/30MIF DevelopersAZ® 300MIFRemoversAZ® 300T, AZ® 400T

2.4µm lines in 10µm thick AZ 12nXT110mJ/cm2 Exposure

AZ 300 MIF Develop (120s)

technical datasheet

AZ® 12XT-20PL Series Chemically Amplified Positive Tone Photoresists

MeRck

Merck KGaA, Darmstadt, Germany Rev. 3/2016

EXAMPLE PROCESS (5µm Film Thickness on Si)

Process Step Parameters

Prime HMDS 140°C/60s (vapor)

Coat 5µm thick film on bare Si

Soft Bake 110C, 120 seconds, direct contact hotplate

Post Bake Delay None*

Expose i-line @ 100mJ/cm2 nominal (0.48NA)

Post Expose Bake 90C, 60 seconds, direct contact hotplate

Develop AZ 300MIF, 2 x 30 second puddles

* Thinner films of AZ 12XT may be affected by airborne amines if delays between soft bake and expose are excessive. Coats thinner than 6µm should be exposed and developed within 30-45 minutes after soft bake.

AZ®

12XT-20PL Series

2.6µm Lines Through Dose

80mJ/cm2

110mJ/cm2

100mJ/cm2

90mJ/cm2

2.6µm Lines DoF @ 100mJ/cm2

0.0µm

3.0µm

2.0µm

1.0µm

Linearity @ 100mJ/cm2

4.0µm

3.0µm

2.0µm

2.2µm

Merck KGaA, Darmstadt, Germany Rev. 3/2016

EXAMPLE PROCESS (10µm Film Thickness on Si)

Process Step Parameters

Prime HMDS 140°C/60s (vapor)

Coat 10µm thick film on bare Si

Soft Bake 110C, 180s, direct contact hotplate*

Post Bake Delay None

Expose i-line @ 110mJ/cm2 nominal (0.48NA)

Post Expose Bake 90C, 60 seconds, direct contact hotplate

Develop AZ 300MIF, 2 x 60 second puddles

* Thicker films may require a ramped soft bake process to avoid bubble formation due to rapid outgassing of solvents. Contact your AZ product representative for ultra-thick coat and bake processing guidelines.

AZ®

12XT-20PL Series

5.0µm Lines Through Dose

100mJ/cm2

130mJ/cm2

120mJ/cm2

110mJ/cm2

5.0µm Lines DoF @ 110mJ/cm2

1.0µm

7.0µm

5.0µm

3.0µm

Linearity @ 110mJ/cm2

4.0µm

3.0µm

2.4µm

2.2µm

Merck KGaA, Darmstadt, Germany Rev. 3/2016

EXAMPLE PROCESS (15µm Film Thickness on Si)

Process Step Parameters

Prime HMDS 140°C/60s (vapor)

Coat 15µm thick film on bare Si

Soft Bake 110C, 240s, direct contact hotplate*

Post Bake Delay None

Expose i-line @ 185mJ/cm2 nominal (0.48NA)

Post Expose Bake 90C, 60 seconds, direct contact hotplate

Develop AZ 300MIF, 2 x 60 second puddles

* Thicker films may require a ramped soft bake process to avoid bubble formation due to rapid outgassing of solvents. Contact your AZ product representative for ultra-thick coat and bake processing guidelines.

AZ®

12XT-20PL Series

7µm Lines Through Dose

185mJ/cm2

200mJ/cm2

215mJ/cm2

230mJ/cm2

7µm Lines DoF @ 185mJ/cm2

2.0µm

8.0µm

6.0µm

4.0µm

Linearity @ 185mJ/cm2

7.0µm

4.0µm

3.0µm

2.6µm

Merck KGaA, Darmstadt, Germany Rev. 3/2016

AZ®

12XT-20PL Series SAMPLE FOCUS/EXPOSURE CURVES on Si

2

2.2

2.4

2.6

2.8

3

3.2

-0.5 0.5 1.5 2.5 3.5 4.5

CD

(µ

m)

Focus Offset (µm)

9095100105110115120

DosemJ/cm2

Mask CD: 2.6µm lines @ 1:1 pitchCoated thickness: 5.0µmSoft Bake 110C/120sExpose: ASML Stepper @ 0.48NAPost Expose Bake: 90C/60sDevelop: AZ 300MIF 2x30s puddles

3.00

4.00

5.00

6.00

7.00

0.0 2.0 4.0 6.0 8.0 10.0

CD

(µ

m)

Focus Offset (µm)

110

120

130

DosemJ/cm2

Mask CD: 5.0µm lines @ 1:1 pitchCoated thickness: 10.0µmSoft Bake 110C/180sExpose: ASML Stepper @ 0.48NAPost Expose Bake: 90C/60sDevelop: AZ 300MIF 2x60s puddles

5.00

6.00

7.00

8.00

9.00

1.0 3.0 5.0 7.0 9.0 11.0

CD

(µ

m)

Focus Offset (µm)

170

180

190

200

210

DosemJ/cm2

Mask CD: 7.0µm lines @ 1:1 pitchCoated thickness: 15.0µmSoft Bake 110C/240sExpose: ASML Stepper @ 0.48NAPost Expose Bake: 90C/60sDevelop: AZ 300MIF 2x60s puddles

Merck KGaA, Darmstadt, Germany Rev. 3/2016

AZ®

12XT-20PL Series PATTERN PROFILES ON VARIOUS SUBSTRATES

Mask CD: 3.0µm holes @ 1:1 pitchCoated thickness: 6.3µm on SiSoft Bake 110C/120sExpose: ASML Stepper @ 0.50NADose: 140mJ/cm2

Post Expose Bake: 90C/60sDevelop: AZ 300MIF 2x45s puddles

Focus = 2.0 Focus = 3.0 Focus = 4.0

Contact Holes on Si

Mask CD: As indicated @ 1:1 pitchCoated thickness: 10.0µm on CuSoft Bake 110C/120sExpose: ASML Stepper @ 0.50NADose: 250mJ/cm2

Post Expose Bake: 90C/60sDevelop: AZ 300MIF 2x45s puddles

Lines and Holes on Cu

8.0µm Lines 5.0µm Lines

5.0µm Holes 3.0µm Holes

Mask CD: As indicated @ 1:1 pitchCoated thickness: 10.0µm on GoldSoft Bake 110C/120sExpose: ASML Stepper @ 0.50NADose: 200mJ/cm2

Post Expose Bake: 90C/60sDevelop: AZ 300MIF 2x45s puddles

Lines on Au

10.0µm Lines 8.0µm Lines

Merck KGaA, Darmstadt, Germany Rev. 3/2016

AZ®

12XT-20PL Series EXAMPLE PROCESS FOR Suss MicroTec MA-200 MASK ALIGNER

Process Step Parameters

Coat 15µm thick film on bare Si

Soft Bake 110C, 180s, direct contact hotplate*

Post Bake Delay None

Expose Suss MicroTec MA-200 Mask Aligner (20µm proximity gap)

Post Expose Bake 90C, 60 seconds, direct contact hotplate

Develop AZ 300MIF, 2 x 60 second puddles

10µm Lines Through Dose

360 mJ/cm2 400 mJ/cm2 480 mJ/cm2440 mJ/cm2

10µm Holes Through Dose

360 mJ/cm2 400 mJ/cm2 480 mJ/cm2440 mJ/cm2

Resolution @ 440 mJ/cm2

8.0 µm 7.0 µm 6.0 µm 5.0 µm

Merck KGaA, Darmstadt, Germany Rev. 3/2016

AZ®

12XT-20PL Series PROCESS CONSIDERATIONS

SUBSTRATE PREPARATION

Substrates must be clean, dry, and free of organic residues. Oxide forming substrates (Si, etc.) should be HMDS primed prior to coating AZ 12XT. Contact your AZ product representative for detailed information on pre-treating with HMDS.

SOFT BAKE

Soft bake times and temperatures may be application specific. Process optimization is recommended to ensure optimum pattern profiles and stable lithographic and adhesion performance. Soft bake temperatures for AZ 12XT should be in the 95-110C range. Delays between soft bake and exposure should be minimized for optimum 12XT performance.

EXPOSURE

AZ 12XT requires exposure energy at the 365nm wavelength.

POST EXPOSE BAKE

A PEB is required for proper imaging of AZ 12XT. PEB temperatures and times may be application specific. As a general rule, PEB temperatures should be in the 90 to 100C range.

DEVELOPING

AZ 12XT series photoresists are compatible with industry standard 0.26N (2.38%) TMAH developers. AZ 300MIF is recommended.

HARD BAKE

Hard baking (post develop bake) improves adhesion in wet etch or plating applications and improves pattern stability in dry etch processes. Hard bake temperatures should be in the 100 to 115C range to ensure minimal thermal distortion of the pattern.

HARD BAKE STABILITY FOR 10µm LINES (6.5µm Film Thickness)

STRIPPING

AZ 12XT Series resists are compatible with industry standard solvent based removers. AZ Kwik Strip, AZ 300T, or AZ 400T is recommended.

No Hard Bake 105C Hard Bake 110C Hard Bake 115C Hard Bake

Merck KGaA, Darmstadt, Germany Rev. 3/2016

COMPATIBLE MATERIALS

AZ 12XT Series materials are compatible with all commercially available lithography processing equipment. Compatible materials of construction include glass, quartz, PTFE, PFA, stainless steel, HDPE, polypropylene, and ceramic.

STORAGE

Store AZ 12XT Series materials are combustible liquids. Store in sealed original containers in a well ventilated, dry area away from heat, light, oxidizers, reducers, and sources of ignition. Recommended storage temperature is 30°-55°F.

HANDLING/DISPOSAL

AZ 12XT Series materials contain PGMEA (1-Methoxy-2-propanol acetate). Refer to the current version of the MSDS and to local regulations for up to date information on safe handling and proper disposal. Wear solvent resistant gloves, protective clothing, and eye/face protection.

AZ 12XT is compatible with drain lines handling similar organic solvent based materials.

The information contained herein is true and accurate to the best of our knowledge at time of printing. All recommendations orsuggestions are offered without guarantee as specific conditions of use are beyond our control. There is no implied warranty ofmerchantability or fitness for purpose of the product or products described herein. In submitting this information, no liability isassumed or license or other rights expressed or implied with respect to any existing or pending patent, patent application, ortrademarks. Observance of all regulations and patents is the responsibility of the user. AZ and the AZ logo are registered trademarksof Merck KGaA, Darmstadt, Germany or its affiliates.

North America:EMD Performance Materials70 Meister AvenueSomerville, NJ USA 08876(908) 429-3500

Germany:Merck Performance Materials(Germany) GmbHWiesbaden, Germany+49 611 962 4031

Korea:Merck Performance Materials(Korea) Ltd.Seoul, Korea+82 2 2056 1316

Singapore:Merck Performance MaterialsPte. Ltd. Jurong East, Singapore+65 68900629

Taiwan:Merck Performance MaterialsCo. Ltd.Hsinchu, Taiwan+886 3 5970885#375

Japan:Merck Performance MaterialsG. K.Tokyo, Japan+81 3 5453 5062

China:Merck Electronic MaterialsShanghai, China+86 (21) 2083 2362

www.emd-performance-materials.com

AZ®

12XT-20PL Series

Merck KGaA, Darmstadt, Germany Rev. 3/2016

Products are warranted to meet the specifications set forth on their label/packaging and/or certificate of analysis at the time of shipment or for the expressly stated duration. EMD MAKES NO REPRESENTATION OR WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, INCLUDING MERCHANTABILITY ORFITNESS FOR A PARTICULAR USE REGARDING OUR PRODUCTS OR ANY INFORMATION PROVIDED IN CONNECTION THEREWITH. Customer is responsiblefor and must independently determine suitability of EMD´s products for customer’s products, intended use and processes, including the non-infringement of any third parties´ intellectual property rights. EMD shall not in any event be liable for incidental, consequential, indirect, exemplary or special damages of any kind resulting from any use or failure of the products: All sales are subject to EMD’s complete Terms and Conditions of Sale. Prices are subject to change without notice. EMD reserves the right to discontinue products without prior notice.

EMD, EMD Performance Materials, AZ, the AZ logo, and the vibrant M are trademarks of Merck KGaA, Darmstadt, Germany.

North America:EMD Performance Materials70 Meister AvenueSomerville, NJ USA 08876(908) 429-3500

Germany:Merck Performance Materials(Germany) GmbHWiesbaden, Germany+49 611 962 4031

Korea:Merck Performance Materials(Korea) Ltd.Seoul, Korea+82 2 2056 1316

Singapore:Merck Performance MaterialsPte. Ltd. Jurong East, Singapore+65 68900629

Taiwan:Merck Performance MaterialsCo. Ltd.Hsinchu, Taiwan+886 3 5970885#375

Japan:Merck Performance MaterialsG. K.Tokyo, Japan+81 3 5453 5062

China:Merck Electronic MaterialsShanghai, China+86 (21) 2083 2362

www.emd-performance-materials.com