TECHNICAL APPLICATION HIGH-ISOLATION MODULATORS AND …

TECHNICAL APPLICATION

HIGH-ISOLATION MODULATORS AND HIGH-LEVEL MIXERS FORCOMMUNICATION LINKS

From September 1995 Wireless Convention paper

CONVENTIONAL DOUBLE CONVERSION AND DIRECT WIDE I/Q BANDWIDTH MODULATOR ARCHITECTURES

Microwave QAM signals are traditionally generated by linearly mixing or modulating a VHF or UHF carrier oscillatorwith band limited I and Q information. The resulting phase and/or amplitude states of the carrier are then multiplied orupconverted by another mixer, local oscillator and sideband filter to the actual transmitted frequency. I/Q modulationhas traditionally been done in this manner because lower frequency high-isolation mixers tend to yield the best carri-er and sideband rejection. The latter qualities are most important for accurate I/Q phase states or transmitted signalconstellations. More recently at MITEQ, the electrical and physical symmetry of microwave baluns have been improvedto yield mixers with LO-to-RF isolations of 45 dB up to 18 GHz. In addition, test data measured on quadrature coupledenhanced isolation double-balanced I/Q modulators show 50 to 60 dB carrier isolation in the 2 to 8 GHz frequencyrange. Consequently, high carrier rejection, biphase and QPSK linear modulators for manufacturing or testing ofreceivers are now possible directly at higher wireless frequencies, without extra frequency conversions. Another tech-nique for designing linear I/Q modulators and demodulators, is to exploit the properties of even-harmonic mixers. Whenthese mixers are used, a lower cost up- or downconverting receiver results because the required LO is at half the nor-mal frequency. The core advantage of the even-harmonic mixer is again very high (55 dB typical) input LO to output 2LO isolation. In the downconverter case, this also often eliminates the need for an input isolator or filter to stop receiv-er LO reradiation, again saving cost.

In addition to I/Q modulators, we will also review the advantages of Schottky diode and MESFET mixers for receiverdesigns. As the density of signals in a receiver increases, the input IP3 rather than noise figure of the front end beginsto limit the dynamic range. This is particularly true for the newer fixed tuned LO wideband RF “block” downconvertersthat utilize digital IF circuits to separate and demodulate each user of the channel. The digital filters can often processclosely spaced signals that are 60 or 80 dB different in power thus requiring similar rejection of spurious mixer outputs.At MITEQ, we have explored the advantages of fundamental, harmonic and sampling mixers using MESFETs insteadof Schottky diodes. The result is often a lower cost LO while still maintaining high receiver dynamic range. The princi-ples of operation for the three common type mixers (fundamental, harmonic and sampling) are reviewed and data ispresented to show the performance obtainable with the newer MESFET equivalent circuits. Sampling mixers can fur-ther lower the cost or receiver design by utilizing a UHF oscillator to downconvert microwave signals up to 20 GHz.

LOWEST COSTDIRECT MODULATOR

CONVENTIONALUPCONVERTER MODULATOR

7 GHz500 MHz

I

Q

I/Q BW= 50 MHz

7 GHz

I

Q

I/Q BW= 500 MHz

137

+10

0

-10

-20

-20 dBm

-6 dBmdBm

14 dB

-5 -4 -3 -2 -1

RF IFIF+1 +2 +3 +4 +5

LO -20 dB


OUTPUT SPECTRUM OF TYPICAL DOUBLE-BALANCED MIXER MODU-LATOR USING HIGH POWER RF AND LOWER POWER IF COMPARED

TO REVERSE POWER RELATIONNote: Carrier suppression limited by use of mixer with 20 dB LO-to-RF isolation

(conversion loss of 6 dB).

RF In

0 dBm

+10 dBm

RF Out

IF In

L RX

RF In L RX

+10 dBm

+0 dBm

RF Out

IF In

+10

0

-10

-20

-10 dBm

-6 dBm

4 dB

-5 -4 -3 -2 -1

RF IFIF+1 +2 +3 +4 +5

LO -20 dB

LINEAR RF MODULATOR(RF POWER < IF POWER)

LINEAR IF MODULATOR(RF POWER > IF POWER)

138


LO-TO-RF BPSK AMP. BPSK PHASEISOLATION ERROR (dB) ERROR (Deg.)

20 0.82 5.725 0.47 3.230 0.27 1.835 0.15 1.040 0.08 0.6

AMPLITUDE/PHASE ERRORS OF BIPHASE AND IDEAL QUADRATUREPHASE MODULATOR FROM POOR MIXER LO-TO-RF ISOLATION

foLO

LEAKAGECODERINPUTDATARATE

CARRIERLEAKAGE

LOWISOLATION

LARGEDELTAPHASE

SMALLDELTAPHASE

HIGHISOLATION

LO

+1

-1

fo

fm

fo ± fmRF

IF

LO LEAKAGE

139

POPULAR VHF/UHF AND MICROWAVE BALUNS

TORRID

∆ = -40 to -50 dB

Frequency = kHz to several GHz

Bandwidth = 100 to 1 Ratio+

-VB

VU

TAPERED

∆ = -20 to -30 dB

Frequency = 1 GHz to 40 GHz

Bandwidth = 20 to 1 Ratio +

-VB

VU

MARCHAND

∆ = -25 to -35 dB

Frequency = 1 GHz to 20 GHz

Bandwidth = 10 to 1 Ratio+

–

VB

VU


∆ = BALANCE ERROR = 20 LogdB

|+VB| - |-VB||+VB| + |-VB|

140


EXAMPLE OF MULTIOCTAVE, LINEAR RF, TTL, BIPHASE MODULATORUSING TAPERED LINE 25 dB BALUNS

MODEL: BMT0218HC10• RF ..................................... 2 to 18 GHz

• TTL ................................... DC to 20 Mbps

• RF (P1 dBm) .................... +16 dBm

• Degree accuracy ............. ±0.4 dB/4°

1.50

.201.30

.95.75

.55.35.15

.10

.102 DIA.MTG. HOLE(TYP. 4 PLACES)

.030 DIA. PIN(TYP. 4 PLACES)

1.02.000

.50

RFIN

-5V -5V GN TTL

RFOUT

FREQUENCY (GHz)

8

4

0

-4

-8

2 18

BIPHASE BALANCE

0.8

0.4

0

-0.4

-0.8

2 10 1018

BIPHASE AMPLITUDE BALANCE

AMPL

ITUD

E ER

ROR

(dB)

PHAS

E DE

VIAT

ION

(DEG

.)

FREQUENCY (GHz)

141

EXAMPLES OF BIPHASE AND QPSK MODULATORS THAT USE NEW45 dB MICROWAVE BALUN DESIGN


BPSK

QPSK

DM0204LA1

SM2737LI6Q

Center 2.5000 GHz SPAN 200.0 MHz

IF = -3 dBm (20 MHz) RF = +13 dBmREF = +13 dBm 10 dB/DIV.

50 dB30 dB

FIXED MKR-20.0 MHz-31.50 dB

fo + IF fo - IF fo fo - 2 IF fo + 2 IF fo - 3 IF fo + 3 IFFreq. Spec. 10.5 dB 18 dBc 18 dBc 30 dBc 30 dBc 18 dBc 18 dBc(GHz) (Max.) (Min.) (Min.) (Min.) (Min.) (Min.) (Min.)2.7 -6.1 -28.8 -29.6 -53 -43.5 -47.4 -51.52.8 -5.4 -28.8 -30.3 -51.4 -44.5 -45.4 -52.22.9 -5.4 -30.5 -30.3 -49 -45.2 -45.4 -533 -5.7 -29.2 -29.4 -48.9 -44.8 -43.7 -50.6

3.1 -5.6 -29.2 -29.6 -48.7 -44.9 -42.5 -50.63.2 -5.5 -28.9 -29.4 -48.8 -45.9 -42.4 -513.3 -6.3 -28 -28.5 -47.7 -45 -40.4 -513.4 -6.3 -28.3 -28.4 -48 -44.4 -40 -50.93.5 -6 -28.6 -28.4 -48.2 -45.4 -40.1 -52.53.6 -5.3 -29.3 -28.2 -50.1 -45 -39.5 -51.13.7 -5.2 -30 -27.1 -53.8 -46.1 -37.8 -50.3

Worst Case -6.3 -28 -27.1 -47.7 -43.5 -37.8 -50.3

I/Q = 0 dBm (200 MHz), RF = +10 dBm

142

Note: Upper sideband is desired output.


DIRECT MICROWAVE I/Q MODULATOR FOR 7.5/8.2 GHzSATELLITE COMMUNICATION BAND

(WITH/WITHOUT DC CARRIER SUPPRESSION VOLTAGE)

SMO607LE3Q(in development)

SDMO708LI3Q


REF -4.2 dBm10 dB

FIXED MKR-20.0 MHz-7.06 dB

RF = +10 dBmI/Q = 0 dBm EACHDC OFFSET = 0VOFFSET = 21, 4 mV(xxxx)


REF -4.2 dBm10 dB

FIXED MKR20.0 MHz-6.72 dB

RF = +10 dBmI/Q = 0 dBm EACHDC OFFSET = 0VOFFSET = 21, 4 mV(xxxx)

xxxx

xxxx

• RF coverage ............................ 7.2 to 8.4 GHz

• RF input power ....................... +10 dBm

• I/Q bandwidth.......................... DC to 500 MHz

• I/Q input level .......................... 0 dBm

• Carrier suppression ............... 25 dB

(with DC compensation.......... 45 dB)

143

GHz

AMPLITUDE AMPLITUDE

WORST CASEBEST ACCURACY

PHASE PHASE

dBDE

GREE

dBDE

GREE

1.5 6.5

+2

+1

0

-1

-2

MAX I/QAMPLITUDEERROR (dB)

I/Q = ±0.707 V

+20°

+10°

0

-10°

-20°

MAX I/QPHASE

ERROR (Deg.)

I/Q = ±0.707 V

GHz 1.5 6.5

+2

+1

0

-1

-2

MAX I/QAMPLITUDE

ERROR

I/Q = ±0.100 V

MAX I/QPHASEERROR

I/Q = ±0.100 V

+20°

+10°

0

-10°

-20°


WIDEBAND, HIGH-ISOLATION I/Q TEST MODULATOR

MODEL: SMC0208LI1Q• Ideal for high fidelity I/Q or QAM Modulation

• Ultra wideband usage .................... 1.5 to 6.5 GHz

• Data rate .......................................... DC to 500 Mbps

• Input-to-output carrier isolation .... 60 dB

• QPSK amplitude/phase accuracy .. 0.5 dB/5°

Frequency fo + IF fo - IF fo fo - 2 IF fo + 2 IF fo - 3 IF fo + 3 IF(GHz) (I.L., dB) (dBc) (dBc) (dBc) (dBc) (dBc) (dBc)

1.5 -10.3 -18 -30 -48.7 -48.9 -34.5 -512 -7 -25.6 -38.9 -48.8 -49.1 -43.5 -53.8

2.5 -6.7 -34.1 -38.6 -48.5 -50.2 -44.6 -54.23 -8.3 -31.2 -41.9 -47.2 -49.5 -47.8 -52.2

3.5 -8 -30.2 -42.2 -48.6 -47.5 -45.9 -50.44 -8.6 -24.5 -30.8 -48.2 -48.6 -48.6 -51.8

4.5 -8.8 -24.1 -27.8 -47.8 -48.1 -45.8 -52.25 -8.9 -27.6 -28.2 -47.6 -48.9 -42.4 -51.7

5.5 -8 -25 -28.7 -46.7 -48.5 -45.6 -51.76 -7.6 -30.2 -28.9 -47 -49 -41 -52.6

6.5 -7.7 -28.2 -34.3 -47.2 -49.4 -42.7 -51.6

Notes: LO level: +16 dBm I/Q level: +4 dBm (20 MHz)

FREQUENCY VS. AMPLITUDE AND PHASE ERRORS OF 1.5 TO 6.0GHz, 64 QAM I/Q MODULATOR CAUSED BY CARRIER

LEAKAGE (MODEL SMC0206LI1)Notes: RF = +16 dBm, = carrier leakage

OUTPUT SPECTRUM RELATIVE TO UPPER SIDEBAND

144


Frequency fo - 3 IF fo - 2 IF fo - IF fo fo + IF fo + 2 IF fo + 3 IF(GHz) (I.L., dB) (dBc) (dBc) (dBc) (dBc) (dBc) (dBc)

1 -41.2 -44.5 0 -28.7 -20.6 -45.9 -12.41.5 -35.5 -47.4 0 -35.4 -30 -63.5 -13.72 -35.7 -50.3 0 -29.5 -32.3 -47.1 -12.7

2.5 -32.9 -39.2 0 -26.8 -32.7 -58.2 -14.53 -31 -39.2 0 -28.9 -31.7 -46.2 -15.1

3.5 -34.5 -38.9 0 -30 -30.1 -44.1 -13.64 -31.8 -44.9 0 -25.3 -25.1 -45.4 -13.7

MULTIOCTAVE BANDWIDTH, ENHANCED SIDEBAND REJECTION MODULATOR (TYPICAL PERFORMANCE)

MODEL: SME0104LI1• RF output/carrier input........... 1 to 4 GHz

• Modulation bandwidth............ DC to 500 MHz

• Modulation input power ......... +10 to +13 dBm

• Sideband suppression ........... 30 dB

• Carrier rejection ...................... 25 dB

QPSKRF

fm(UPPER)

fm(LOWER)

LO

RF

RF (IN)

RF (OUT)

LOQPSK

2.502.350

.075TERMINATION(50 OHMS)

.100 DIA.MTG. HOLE(TYP. 4 PLACES)

TERMINATE UNUSED IF PORT

RF CONNECTOR SMA FEMALE(TYP. 4 PLACES)

.2501.000

1.7501.5002.000

.250

.250.50

.500

145


8 TO 18 GHz EVEN-HARMONIC (1/2 LO) BALANCED MIXER

MODEL SBE0818LM2• Isolation .................. 60 dB (2 LO to RF)

• RF ............................ 8 to 18 GHz

• LO ............................ 4 to 9 GHz

• IF.............................. DC to 1 GHz

• High carrier rejection(when used as an upconverter)

TYPICAL OUTPUT SPECTRUM ASLINEAR UPCONVERTER (MODULATOR)

TYPICAL DOWNCONVERTER SPURS

LO

IF RF

SINGLE TONE (m) RF ± (n) LO RELATIVE SPUR LEVEL (dBc)(AVERAGE MIDBAND RF, LO, IF FREQUENCIES,

RF = -10 dBm, LO = +7 dBm)

SPUR RF TEST LO TEST SPUR (m) RF X (n) LO FREQ. (GHz) FREQ. (GHz) LEVEL (dBc)

1 x 1 10.75 11.25 -331 x 2 14.5 7.5 0 REF1 x 3 16.36 5.62 -302 x 1 7.16 14.8 -452 x 2 10.87 11.12 -502 x 3 13.10 8.9 -453 x 1 5.37 16.6 -403 x 2 8.7 13.3 -403 x 3 10.91 11.08 -50

-45 dB

60 dB

IF LO 2LO FREQ.

LO = +7 dBm

.750.662

.080

.750 LOIN

R

IF

.670

.375

.375

.080

.050 RADIUS TYP.

.075 DIA. THRU4 MTG. HOLES

.212

.030 .018.065

SCHEMATIC

146


INPUT DYNAMIC RANGE OF LNA-MESFET MIXER AS A FUNCTION OFLNA PERFORMANCE

IMAGEREJECTION

MESFETMIXER

LNA

LO

IFP1 dB / NF

6

5

4

3

2

1

0+20 +10 0 -10 -20

+23 dBm PLO MIXER

+20 dBm

+15 dBm

6

5

4

3

2

1

00 10 20 30 40

P1 dB INPUT (dBm) GAIN (dB)

NOIS

E FI

GURE

(dB)

NOIS

E FI

GURE

(dB) P1 dB OUTPUT

+20 dBm

+15 dBm

+10 dBm

TYPICAL INPUT DYNAMIC RANGE LIMITSOF MITEQ LNA/IR MIXER (4 TO 8 GHz)

TYPICAL PERFORMANCE LIMITSOF MITEQ LNAs (4 TO 8 GHz)

For best spurious levels:• Choose mixer with highest LO/RF/IF port guaranteed isolation including

triple-balanced designs

• Use maximum available LO power and diodes

• Terminate both RF and IF ports (or at least one of them) with wideband termination

• Utilize termination insensitive circuit

• Consider MESFET mixers

147


SOURCE OF MIXING DISTORTION (E/I CHARACTERISTIC) OF ASCHOTTKY DIODE AND MESFET

• Straight line (25 ohm resistor) yields no distortion

• Maximum Schottky nonlinearity (and spurs) at “knee”

• MESFET symmetry yields low “odd” order spur products

25Ω

IDVD

-1 -0.5 VD +0.5 +1.0

100

50

ID

-50

-100

SCHOTTKY DIODE

UNSYMMETRIC E/I

25Ω

VDS Vgs = 0 V

Vgs = -1 VIDSVGS

-1 -0.5 VDS +0.5 +1.0

100

50

IDS

-50

-100

SYMMETRIC E/I(Low Odd Harmonics)

MESFET

COMMON PASSIVE MESFET MIXER CIRCUITS

SINGLE FET “SF”• WIDE BANDWIDTH

• LOW LO/RF ISOLATION

DUAL FET “SBF”• RF OR IF HARMONIC

SUPPRESSION

• REQUIRES BALUNS

QUAD FET “DBF”• RF AND IF HARMONIC

SUPPRESSION

• ALL PORTS ISOLATED

RF

IF

LO

RF

IF

LO

LO = +13IP3 = +23

LO = +20IP3 = +30

LO = +23IP3 = +33

RF

IF

LO

148


COMPARISON OF SCHOTTKY AND MESFET MIXER SPURS

SINGLE TONE (m) RF ± (n) LO RELATIVE SPUR LEVEL (dBc)(AVERAGE MIDBAND RF, LO, IF FREQUENCIES,

RF = -10 dBm, LO = +16 dBm)

SPUR RF TEST LO TEST SPUR (m) RF X (n) LO FREQ. (GHz) FREQ. (GHz) LEVEL (dBc)

1 x 1 11.2 12.7 01 x 2 15.5 8.5 221 x 3 18.3 5.6 152 x 1 7.5 16.5 632 x 2 11.6 12.4 352 x 3 14.7 9.3 553 x 1 6.3 17.6 733 x 2 9.7 14.1 633 x 3 11.7 12.2 63

SINGLE TONE (m) RF ± (n) LO RELATIVE SPUR LEVEL (dBc)AVERAGE MIDBAND RF, LO, IF FREQUENCIES, RF = -10 dBm, LO = +10 dBm (L), +20 dBm (H)

SPUR RF TEST LO TEST SPUR LEVEL (dBc)(m) RF X (n) LO FREQ. (GHz) FREQ. (GHz) L H

1 x 1 10.5 11.5 0 01 x 2 14 7.5 -26 -251 x 3 15 5.3 -15 -122 x 1 6.5 1.4 -45 -532 x 2 10.5 11 -53 -602 x 3 13 9 -48 -483 x 1 5.3 17 -50 -573 x 2 8.3 13 -50 -683 x 3 10 10.3 -50 -55

MESFET

MESFET

SCHOTTKY

FUNDAMENTAL LO DOUBLE-BALANCED MIXER CIRCUITS

• IP3/PLO = 0–5 dB

• Lowest cost

• Max IP3= +25 dBm (>2 GHz)

• P1 dB/PLO = -5 dB

IF

LORF RF

IF

LO

VB SD

SD

SD

SD

SCHOTTKY

• IP3/PLO = 5–15 dB

• Easy to bias

• Max IP3 > +35 dBm

• P1 dB/PLO = 0 dB

DB0418HE1

SBF0618LW2

DB0418HW6

149


+VDC

L

I

R.040(TYP. 8 PLACES)

.170

.100(TYP. 4 PLACES)

.008

.050 (TYP.4 PLACES) .016 ±.002 (TYP. 4 PLACES)

.450 SQ..250

.225

DC BIAS PIN(AS REQUIRED)

1.8 GHz DOUBLE-BALANCED MESFET MIXER

• RF/LO ..................... 1.7–1.9 GHz

• Input IP 3.................. +40 dBm @ +30 dBm LO+36 dBm @ +26 dBm LO

• IF response............ 50 to 2000 MHz

• Isolation ................. 25 dB (LO/RF) 30 dB (LO/IF)

• VSWR RF................ 2.0:1LO ............... 3.0:1IF ................. 2.0:1

SCHEMATIC

LO

–V

–V

RF

IF-3

-3

180°HYBRID

Σ

150


1.8 GHz DOUBLE BALANCED MESFET MIXER

MODEL: DBF1800W3• Two-tone IP 3 .................... +36 dBm

• RF Input 1 dB comp. ...... +26 dBm

• LO power ......................... +20 to +26 dBm

• Packaging ........................ Surface mount

1.70 1.74 1.78 1.82 1.84 1.90FREQUENCY (GHz)

VSW

R (R

atio

)CO

NVER

SION

LOS

S (d

B) IF RESPONSE (dB)IS

OLAT

ION

(dB)

IP3 POW

ER (dBm)

0

10

20

30

40

+50

+40

+30

+20

+10

FREQUENCY (GHz)

CONVERSION LOSS RELATIVE IF RESPONSE (LO = +23 dBm)

RF AND LO VSWR(LO = +23 dBm)

1.92.00

1.7DC

0

2

4

6

8

0

2

4

6

8

IF GHzRF GHz

5:1

4:1

3:1

2:1

1:1

LO-TO-RF ISOLATION AND IP3

1.70 1.74 1.78 1.82 1.84 1.90

LO = +20 dBm

LO = +26 dBm

Input IP3

LO/RF IsolationLO/IF Isolation

IF RESPONSE

CONVERSION LOSS

LO VSWR

RF VSWR

SINGLE TONE (m) RF ± (n) LO SPUR LEVELRELATIVE (dBc) TO REF (RF = -10 dBm, LO = +26 dBm)

5

4

3

2

1

>100

>100

82

68

REF

1

-

>100

95

70

50

2

-

-

>100

80

70

4

-

>100

>100

80

47

3

LO HARMONIC

RF H

ARM

ONIC

-

-

>100

85

58

5

TYPICAL TEST DATA

151


MODEL: DBF1800W3• RF/LO coverage ...................... 8 to 12 GHz

• IF operation ............................. 1.5 to 2 GHz

• LO-to-RF isolation .................. 30 dB minimum

• Input IP 3 ................................... +35 dBm

• RF/LO VSWR ........................... 1.5:1

.708

.552.552

.157.059

.708.649

.552

.157

.03 WIDTH .078 DIA. HOLE(TYP. 4 PLACES)

RF LO

DC IF

.059

X-BAND TERMINATION INDEPENDENT MESFET MIXER

SCHEMATIC

RF

LO

IF(UP)

IF(DOWN)

-3

-3

180°HYBRID

Σ

152

Note: Measured data with LO = +26 dBm, bias = -15 volts

INPUT CONVERSION INPUT LO/RF RF RETURN LO RETURNRF LO IP3 LOSS P1 dB ISOLATION LOSS LOSS

(GHz) (GHz) (dBm) (dB) (dBm) (dB) (dB) (dB)8 6 37 8 26 30 25 15

8.5 6.5 37 8 27 34 25 169 7 37 7.9 26 36 23 20

9.5 7.5 37 7.7 25 32 21 2210 8 36 7.5 25 32 20 20

10.5 8.5 37 7.9 25 40 17 1911 9 34 8.2 25 34 16 18

11.5 9.5 37 8.5 25 34 15 2012 10 36 9 24 32 15 23


SCHEMATIC

RF

LO

IF

NEW MESFET EVEN LO HARMONIC MIXER CIRCUIT

• RF.................................... 5 to 6 GHz

• LO ................................... 2.5 to 3 GHz

• Conversion loss ............ 10 dB

• RF 1 dB comp. .............. +10 dBm

• LO power........................ +13 dBm(with bias)

• 2 LO-to-RF isolation...... 30 dB

• IF frequency................... DC to 1 GHz

153


SAMPLING MIXER CIRCUIT

IFRF

RF INPUT

LO INPUT

DC/IF OUTPUT

MESFETSCHOTTKY

MICROWAVEINPUT

OUTPUT TOOP–AMP

LO

C1

MICROWAVEINPUT

R1

R2

C2

D2

D1

C1

IC

R3

R4

R5

C3

C4

OUTPUT

LO

LO

154


COMPARISON OF SCHOTTKY AND MESFET 2 TO 18 GHz SAMPLINGMIXER SPURIOUS RESPONSES

SCHOTTKY DIODE

MESFET

036912151821

2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

05101520253035404550

RF FREQUENCY (GHz)

IF 2NDHARMONIC

IF SPURIOUS RESPONSE

CONV

ERSI

ON L

OSS

(dB)

SPURIOUS RESPONSE (dBc)

IFFET

RF

LO

SRD

TYPICAL SCHEMATIC

SRD0218LW4

LOWER COST RECEIVER USING SAMPLING MIXER TECHNOLOGY

RF INPUT

LNABANDPASS

FILTER

1 GHz LO

I/QSAMPLING

MIXERIF 90°

HYBRIDI

Q

IF

10

0

-10

2 5.2 8.4 11.6 14.8 18

CONV

ERSI

ON G

AIN

(dB)

RF FREQUENCY (GHz)

2ND & 3RD HARMONIC REJECTIONAT -10 dBm RF INPUT (AT 25°C)

2 (RF ± n LO)

3 (RF ± n LO)

CONVERSION GAIN

-50

-60

-70

HARMONIC REJECTION (dBc)

155

IFRF

LO

SRD

156

MODEL NUMBER PAGE NUMBER

BMA0104LA1MD 11BMA0208LW2MD 13BMA0218LA1MD 15BMA0502LA2MD 9BMA0618LA1MD 21BMT0218HC10MD 17BMT0218HR5MD 19BMT65175HC10MD 7EOM0218HW4 105EOM0226HW2 107FEM3.0, FEM1.5 99FOMR7-L, FOMR7-H 101SDM0102LC1CD 59SDM0102LC1MDQ 31SDM0104LC1CD 61SDM0104LC1MD 35SDM0204LC1MD 65SDM0208LC1CD 43SDM0208LC1MD 45, 67SDM0307LI1CDQ 37SDM0502LC1MD 27SDM0708LI3CDQ 47SDM1015LI3CDQ 51SDM6474LCDQ 41SM0206MAVC 89SM0218LC1CD 75SM0218LC1MD 77SM0226LC1MD 87SM0408LC2MD 71SM0618LC2MD 79SM0618MAVC 91SM0812LC2MD 73SM1218LC2MD 85SM2737LI6CD 33SMC0206DDS 115SMC0206LI1CD 39SMC0502DDS 113SMC0506DDS 117SMC0618DDS 121SMC0618LAVC 93SMC0618LI1CD 55SMC0910DDS 119SME0208LI1MD 69SME0104LI1MD 63SME0618DIQ 95SME0618LI1CD 81SME0618LI1MD 83SML0711LM8CDQ 49SMT0081LC1MDQ 25SMT0218LC1MD 53SMT0502LC1MD 29SYS03X20 103TD0040LA2 109

PRODUCT INDEX

157

WARRANTY

MITEQ, Inc. warrants that each of its products, when shipped will be free from defects in material and workman-ship and will perform in full accordance with applicable specifications. The limit of liability under this warranty is torepair or replace any product or part thereof which shall within three years of delivery for indoor equipment andtwo year for outdoor equipment, be returned by the original purchaser to MITEQ, Inc., 100 Davids Drive,Hauppauge, New York 11788, and shall, as determined by examination by MITEQ, Inc., prove defective in mater-ial and/or workmanship. Warranty returns must first be authorized by MITEQ, Inc.

Disassembly of any MITEQ, Inc. product by anyone other than an authorized representative of MITEQ, Inc. voidsthis warranty in its entirety.

MITEQ, Inc. reserves the right to make changes in any of its products without incurring any obligation to make thesame changes on past purchases.

This warranty is the full extent of the obligation or liability assumed by MITEQ, Inc. with respect to its products, andis in lieu of all other warranties, expressed or implied.

1. The buyer will prepay the shipping charges for all products returned to MITEQ for repair and MITEQ will pay forthe return shipping for everything with the exception of rack mountable hardware returned from outside the UnitedStates in which case the buyer will pay the shipping charges.

2. You will pay our costs of inspecting and testing any goods returned under the warranty or otherwise which arefound to meet any applicable specifications or which are not defective or not covered by the warranty.

3. No goods sold by us shall be considered defective or non-conforming to your order if they satisfactorily fulfill anyperformance requirements you may have given to us or any written or verbal agreement between you and us or ifthey are in accordance with samples approved by you. In no event shall we be liable to you in excess of the priceof goods or for any consequential damages.

4. The prices quoted on our goods include taxes payable by us as seller, but (unless otherwise specifically shownhereon) not taxes payable by or chargeable to you as purchaser which we are required to collect.

5. We agree to comply with all applicable state and federal laws, rules and regulations to the best of our ability. Ifthe goods covered by your order are to be used in making parts or equipment to be furnished to the U.S.Government under a Governmental contract and you so advise us prior to the commencement of our work, we willattempt to comply with the applicable requirements of such Governmental contract to the extent they do notincrease our costs for completing your order.

6. Any fixtures, dies or tools, for which we may pay and charge to your account in connection with your order, shallnot become your property unless otherwise specifically agreed. All such equipment in our possession shall beused exclusively for the manufacture of goods for you but may be disposed of when, in our opinion, they havebecome obsolete.

7. We certify that the invoiced prices do not exceed the lower of (a) your and our agreed upon price and (b) themaximum prices therefore established in accordance with the most recent applicable regulatory order or regula-tion, if any.

8. All matters regarding this sale shall be interpreted in accordance with the laws of the State of New York and anycontroversy that cannot be settled directly shall be settled by arbitration in New York, New York in accordance withthe rules then prevailing of the American Arbitration Association, and judgement upon the award rendered may beentered in any court having jurisdiction thereof.

9. Damages and Liability

SELLER’S AGGREGATE LIABILITY IN DAMAGES OR OTHERWISE SHALL NOT EXCEED THE PAYMENT, IFANY, RECEIVED BY SELLER FOR THE UNIT OF PRODUCT OR SERVICE FURNISHED OR TO BE FUR-NISHED, AS THE CASE MAY BE, WHICH IS THE SUBJECT OF CLAIM OR DISPUTE. IN NO EVENT SHALLSELLER BE LIABLE FOR INCIDENTAL, CONSEQUENTIAL, OR SPECIAL DAMAGES, HOWSOEVER CAUSED.

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ADDITIONAL PRODUCTS FROM MITEQ

AMPLIFIERS - GaAS FET DESIGNS TO 60 GHz• Low-noise amplifiers

Moderate bandwidth (10% BW), with noise figures from 0.35 dB at L-band to 2.5 dB at 40 GHz and 6 dB at 60 GHzClassical octave bands, with noise figures from 0.4 dB in the 1–2 GHz band and 2.5 dB in the20–40 GHz band.Multioctave and ultra-wideband designs,with noise figures from 1 dB at 2 GHz to 3 dBat 40 GHz

• Medium power amplifiersModerate to ultra-wideband designs with +33 dBm at 18 GHz, 18 dBm at 40 GHz

• Power amplifiersModerate band to octave designs with output power to 10 watts (linear)

OSCILLATORS/FREQUENCY SOURCES• Crystal oscillators to 195 MHz, single or multiple

crystal, moderate to high stability• Crystal oscillator/multipliers to 40 GHz• Voltage-tuned oscillators to 4 GHz• Cavity-tuned oscillators to 6 GHz• Coaxial resonator oscillators to 3.2 GHz• Dielectric resonator stabilized oscillators (DROs)

from 3–20 GHz• Phase-locked oscillators, combine crystal-

controlled oscillators with the above-listed free-running sources

• Frequency synthesizers to 50 GHz, singleloop or multiloop, with fine frequency resolution and low phase noise

• Frequency doublers to 60 GHz; passive, active with unity gain

• Frequency triplers and quadruplers, custom designs to 50 GHz

SIGNAL PROCESSINGRF AND MICROWAVE SIGNAL PROCESSINGCOMPONENTS (MIXER AND MIXER-RELATEDPRODUCTS TO 50 GHz)• Single, double, and triple balanced mixers

Phase/amplitude matched sets• Low spurious level mixer/preamps• Multioctave image rejection mixer/IF amplifiers• Single sideband and biphase modulators• Integrated multifunction frequency conversion

assemblies• Low harmonic upconverter/modulators

RF AND MICROWAVE SIGNAL PROCESSING COMPONENTS (CONT.)• Low 1/f noise phase detectors• Ultra-high IP3 level mixers• Low-noise front ends• Solid state switches, one-to-six throw above 18 GHz• Solid state attenuators

1–18 GHz in octave bands, current and voltage controlled linear models, analog and digitally controlled

• Switch matrixes• Switch filter banks• Custom integrated microwave assembles including:

block frequency converters, radar receiver front ends, and modulator subsystems to complete integrated receivers

IF SIGNAL PROCESSING COMPONENTS TO 3 GHz• Voltage controlled amplifiers• Automatic gain controlled (AGC) amplifiers• Constant phase limiting amplifiers• Discriminators• Logarithmic amplifiers• Extended range DLVA (to 18 GHz)• I/Q processors

VIDEO SIGNAL PROCESSING COMPONENTS• DC-coupled amplifiers to 2 GHz• Audio distribution amplifiers• Video distribution amplifiers

SATELLITE COMMUNICATION PRODUCTS• Synthesized converters, 1.0 kHz and 125 kHz

frequency step size• Crystal controlled converters• Frequency translators• 1:1 and 1:N redundant switchover systems• Video exciters• 1:1 and 1:2 redundant amplifier systems• 70 MHz and 140 MHz variable IF delay and

amplitude slope equalizers• INMARSAT L- and C-band converters, pilot

generators/receivers, translators• Uplink power control units• Receiver subsystems• Integrated modules• FM modulators• FM demodulators• Pressurized (weatherproof) and weather resistant

enclosures• Custom designed products

In addition to the products listed in this catalog, MITEQ manufactures a large variety of other microwave components,subsystems, and systems. A short synopsis of these products is presented below.

TECHNICAL APPLICATION HIGH-ISOLATION MODULATORS AND …

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