External Use TM TD-SCDMA and TDD-LTE Solution FTF-NET-F0479 MAY.2014 Song Di | China RF Application Manager Laurence Li | China RF Marketing
External Use
TM
TD-SCDMA and TDD-LTE
Solution
FTF-NET-F0479
M A Y . 2 0 1 4
Song Di | China RF Application Manager
Laurence Li | China RF Marketing
TM
External Use 1
Agenda
• TD-SCDMA and TDD-LTE Evolution Overview
• Solutions Recommendation
• Typical Performance Update
TM
External Use 2
Radio Frequency
Applications
Wireless Network Infrastructure • Macro, Metro & small cellular basestations
• Digital front end
Broadcast, Industrial/Scientific/Medical • UHF & VHF broadcast TV
• FM & shortwave radio
• CO2 lasers, plasma generation, MRI
Enterprise Access Points, Professional
Mobile Radio • Converged cellular / wifi
• Public safety, dispatch, transportation, marine
Aerospace / Defense • Radar
• Air traffic management
• Jammers
• Market leadership / scale
• Best-in-class performance in linear efficiency,
gain, bandwidth and power
• Fully optimized reference designs
• Long-term customer relationships
Why Customers Choose Us
Customers
We pioneered RF technology and continue to be the leader with high-quality,
high-performance products using the latest technologies
Products
Airfast RF Platform RF Power ICs
Market Leadership
#1 High Power RF Transistors for Wireless
Infrastructure (1)
Source: (1) ABI Research, December 2012
TM
External Use 3
TD-SCDMA and TDD LTE evolution in China
• Since the beginning of TD-SCDMA deployment in CMCC, Phase 1~ 5
had been deployed till 2012
• Phase 6~7 has been evolved into TD-LTE including frequency band F+A,
D and E since 2013
• Multiband and wide signal bandwidth are being used for high data traffic
• With three of China operators deploying TDD-LTE base station this year,
especially from CMCC, TDD-LTE base station will be the significant part in
4G base station
• Whether it would last in following years or how it evolve in future?
TM
External Use 4
Application Suggested Line Ups
Driver Final
Band E (2.3GHz)
Indoor/High Power 2*40W
2*AFT20S015N
2*AFT27S010N
AFT23H200-4S2L
2*AFT23S160WS/23S170S
Band D (2.6GHz)
Indoor/High Power 2*40W
2*AFT20S015N
2*AFT27S010N
AFT26H200W03S
AFT26H250-24S
2*AFT26H160
Band D (2.6GHz)
Outdoor/Medium Power 8*10W/8*15W
2*AFT27S006N
AFT20S010N
AFT26P100-4WS
AFT26H160-4S4
2.6GHz Small Cells
Low Power 5W AFT27S006N AFT26HW050S
Application Suggested Line Ups
Driver Final
Band F+A
Outdoor/Medium power 8*15W/20W
AFT27S006N
AFT27S010N
MRF8P20140WHS
AFT20P140-4WS
Band F+A
Indoor/High power 2*40W AFT20S015N/2*AFT27S006N
2*MRF8P20140WHS
2*AFT20P140-4WS
2.3/2.6GHz TD-LTE Solutions
TDSCDMA F+A Solutions recommendation
TM
External Use 5
AFT20P140-4WS
Performance Overview: Frequency band: 1880MHz – 2025MHz P3dB > 52.3dBm Gain >17dB Drain Efficiency @ 43.8dBm = 41%
• OM-780 Package
• eVBW Included
• Launch = March, 2013
1 10 100-65
-60
-55
-50
-45
-40
-35
-30
-25
-20Inter-modulation Distortion vs. Tone Spacing
Tone Spacing (MHz)
Inte
r-mod
ulat
ion
Disto
rtion
(dBc
)
Freescale Semiconductor
1 10 100-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
IM3-L
IM3-U
IM5-L
IM5-U
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB)
Eff
(%)
1880 43.80 17.78 -31.33 -31.35 7.96 41.81
1960 43.80 17.91 -34.10 -33.89 8.14 41.95
2025 43.80 17.82 -34.18 -34.48 8.01 41.47
Pout = 43.8 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%
Main Solution For TDSCDMA Market
High Gain
eVBW inside to enable 160MHz VBW
Support 145MHz SBW
Cost effective with OMNI package
TM
External Use 6
AFT26H160-4S4
• NI-880XS extra-lead
• Launch = May, 2013
Performance Overview:
Frequency band: 2530MHz – 2630MHz
P3dB ~ 53.1dBm(VDD=28V),
Gain >16.1dB
[email protected] =42.4%~44.1% [*]
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB) Eff (%) Id (A)
2530 44.989 16.333 -33.54 -33.52 7.821 44.116 2.551
2580 44.995 16.41 -35.21 -35.62 7.756 43.683 2.579
2630 44.993 16.154 -38.27 -39.23 7.756 42.43 2.654 1 10 100
-60
-55
-50
-45
-40
-35
-30
-25
-20Inter-modulation Distortion vs. Tone Spacing
Tone Spacing (MHz)
Inter
-mod
ulatio
n Dist
ortio
n (dB
c)
Freescale Semiconductor
1 10 100-60
-55
-50
-45
-40
-35
-30
-25
-20
IM3-L
IM3-U
IM5-L
IM5-U
IM7-L
IM7-UVDD=28V, Idq=0.6A, Vpeak=0.7V
High Gain
High Efficiency (HiP)
Support 100MHz SBW
Main Solution For TDD-LTE Market
1C W-CDMA, PAR=10.3dB @ CCDF=0.01%
TM
External Use 7
Line-up Demo with Shield MMZ25332B+AFT20S015GN+AFT26H160-4S4
MMZ25332B AFT20S015GN
AFT26H160-4S4
RN2 RCP250Q1P5
HTD HYH103DZ0.0 Rogers 4350 20mil PCB
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB)
Eff
(%)
2496 44.502 53.221 -31.55 -32.01 8.109 35.585
2530 44.504 52.701 -33.14 -33.19 8.365 35.96
2590 44.505 52.259 -33.88 -33.6 8.494 35.946
2630 44.497 52.231 -34.16 -33.85 8.494 36.027
2690 44.491 52.61 -35.3 -34.87 8.173 35.658
Pout = 44.5 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%
Performance Overview:
Frequency band: 2496 MHz – 2690MHz P1dB ~ 51.6 dBm, P3dB ~ 52.8dBm Gain > 52dB, [email protected] dBm >35.5%
Turn-key Solution • Excellent performance
• 3-stage demo with compact size
• Shield and Isolator added
• Close to real application
TM
External Use 8
AFT23H200-4S2L
Performance Overview: Frequency band: 2300MHz – 2400MHz P1dB > 55dBm ,P3dB > 55.8dBm (30V) Gain >15.4dB Drain Efficiency @ 47.8dBm(8dB OBO)= 46~47%
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB)
Eff
(%)
2300 47.806 15.482 -32.11 -31.59 7.885 47.222
2350 47.786 15.814 -35.2 -34.54 7.917 46.504
2400 47.811 15.941 -36.71 -35.76 7.885 46.333
Vd = 30.0V, Idq=0.8A, Vpeak = 0.6 V
1 10 100-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20Inter-modulation Distortion & Gain vs. Tone Spacing
Tone Spacing (MHz)
Inter
-mod
ulatio
n Dist
ortio
n (dB
c)
Freescale Semiconductor
1 10 10013.95
14.35
14.75
15.15
15.55
15.95
Gain
(dB)
1 10 100-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
1 10 10013.95
14.35
14.75
15.15
15.55
15.95
IM3-L
IM3-U
IM5-L
IM5-U
IM7-L
IM7-U
Gain
• NI-1230 extra-lead
• Launch = March, 2013
High power and efficiency
Cost effective (one device solution)
TM
External Use 9
AFT26HW050S
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
0.1 1 10 100
IMD
3, IM
D5 a
nd
IM
D7 (
dB
c)
Freq (MHz)
IMD3, IMD5 and IMD7 vs. Tone Spcacing
IMD3_L
IMD3_U
Performance Overview:
Frequency band: 2620MHz – 2690MHz P3dB ~ 48dBm(VDD=28), Gain ~ 15.5dB Efficiency@ 8 dB OBO > 48%
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB) Eff (%)
2620 40 15.335 -33.41 -33.74 7.756 48.332
2655 40 15.551 -35.4 -35.52 7.853 48.964
2690 40 15.43 -36.43 -36.72 7.788 48.403
• NI-780 extra-lead
• Final Samples = Feb, 2013
• Launch = March, 2013
Pout = 40 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%
The Highest 2.6GHz Efficiency in the Industry
Compact Size Matching
TM
External Use 10
AFT26P100-4WS
Performance Overview:
Frequency band: 2570MHz – 2620MHz P1dB ~ 49.5dBm, P3dB ~ 51dBm(VDD=28), Gain ~ 15.5dB [email protected] (8 dB OBO)>44% Efficiency@ 44dBm (7dB OBO) >47%
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
Eff
(%)
Id
(A)
2570 42.791 15.437 -32.71 -32.5 44.338 1.53
2595 42.817 15.483 -33.19 -33.44 44.773 1.524
2620 42.798 15.504 -33.66 -33.69 44.411 1.53
1 10 100-65
-60
-55
-50
-45
-40
-35
-30
-25Inter-modulation Distortion & Gain vs. Tone Spacing
Tone Spacing (MHz)
Inte
r-mod
ulat
ion
Disto
rtion
(dBc
)
Freescale Semiconductor
1 10 10012.4
12.8
13.2
13.6
14
14.4
14.8
15.2
15.6
Gain
(dB)
1 10 100-65
-60
-55
-50
-45
-40
-35
-30
-25
1 10 10012.4
12.8
13.2
13.6
14
14.4
14.8
15.2
15.6
IM3-L
IM3-U
IM5-L
IM5-U
IM7-L
IM7-U
Gain
• NI-780 Package
• eVBW Included
• Launch = March , 2013
eVBW inside to enable 150MHz VBW
150MHz VBW
TM
External Use 11
AFT26H200W03S
Performance Overview:
Frequency band: 2595MHz –2655MHz P1dB > 53dBm, P3dB > 54.5dBm(VDD=30V), Gain > 15.0dB Drain Efficiency @ 46.5dBm(8dB OBO)= 44%
• NI-1230 eVBW
• Launch = June , 2013
1 10 100-65
-60
-55
-50
-45
-40
-35
-30
-25Inter-modulation Distortion & Gain vs. Tone Spacing
Tone Spacing (MHz)
Inte
r-mod
ulat
ion
Disto
rtion
(dBc
)
Freescale Semiconductor
1 10 10012.04
12.44
12.84
13.24
13.64
14.04
14.44
14.84
15.24
Gain
(dB)
1 10 100-65
-60
-55
-50
-45
-40
-35
-30
-25
1 10 10012.04
12.44
12.84
13.24
13.64
14.04
14.44
14.84
15.24
IM3-L
IM3-U
IM5-L
IM5-U
IM7-L
IM7-U
Gain
eVBW inside to enable 220MHz VBW
Freq
(MHz)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB)
Eff
(%)
2595 15.037 -33.14 -32.93 7.885 45.452
2625 15.073 -34.15 -34.8 7.853 44.842
2655 14.977 -35.26 -35.13 7.821 43.876
Pout = 46.5 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%
TM
External Use 12
AFT26H250-24S
Performance Overview:
Frequency band: 2620MHz –2690MHz P1dB > 53.5dBm, P3dB > 55dBm Gain > 15.0dB Drain Efficiency @ 47.5dBm(8dB OBO)= 41% ** All above performance is with circulator
• NI-1230-4L2L
• Launch = Nov, 2013
High power
Support 80MHz SBW
Cost effective (one device solution)
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
Alt1-L
(dBc)
Eff
(%)
2620 47.491 15.128 -35.88 -36.27 -52.56 42.464
2655 47.507 15.205 -36.69 -36.51 -52.67 41.509
2690 47.5 15.24 -37.01 -37.02 -53.28 41.099
Pout = 47.5 dBm, 1C W-CDMA, PAR=10.3dB @ CCDF=0.01%
1 10 100-80
-70
-60
-50
-40
-30
-20Inter-modulation Distortion vs. Tone Spacing
Tone Spacing (MHz)
Inter
-mod
ulatio
n Dist
ortio
n (dB
c)
Freescale Semiconductor
1 10 100-80
-70
-60
-50
-40
-30
-20
IM3-L
IM3-U
IM5-L
IM5-U
IM7-L
IM7-U
TM
External Use 13
AFT27S006N
• PLD1.5-W
• Final Sample= Aug, 2013
• Launch = Sep, 2013
720-820MHz
1805-1880MHz
2110-2170MHz
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB)
Eff
(%)
720 30 22.2 -39.5 -39.1 9.1 26.1
770 30 22.8 -42.6 -42.8 9.0 24.5
820 30 22.7 -41.1 -41.7 9.0 22.7
1805 29.6 22.3 -38.9 -39.3 9.4 22.5
1842.5 29.6 22.5 -42.7 -42.9 9.1 22.7
1880 29.6 22.0 -45.3 -45.3 9.0 22.91
2110 29.7 22.0 -41.7 -42.0 9.0 20.9
2140 29.7 22.1 -43.1 -43.1 9.0 21.3
2170 29.7 22.1 -45.2 -44.8 9.0 21.7
2496 29 19.6 -43.3 -43.1 9.7 19.0
2590 29 20.3 -41.2 -40.8 9.3 19.3
2690 29 19.6 -40.1 -40.1 9.1 19.3
Vdd=28V, Idq=60mA
Across from720MHz to 2690MHz
• P-1>38dBm
• Gain>19.5dB
Broadband
High Gain
Low Cost
TM
External Use 14
AFT27S010N
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB)
Eff
(%)
2496 31 18.5 -44.0 -44 9.4 18.9
2530 31 19.0 -44.5 -44.3 9.4 18.9
2580 31 19.3 -44.2 -43.8 9.4 19.2
2630 31 19.3 -43.7 -43.1 9.3 19.3
2690 31 19.0 -44.0 -44.3 9.0 19.3
1805 31.8 22.1 -42.5 -42.9 9.2 21.2
1845 31.8 22.0 -42.8 -42.9 9.1 21.6
1880 31.8 21.7 -43.3 -42.9 9.1 22.1
870 31.3 22.7 -43.6 -43.6 9.0 22.4
820 31.3 22.5 -45.0 -44.6 9.1 20.7
960 31.3 22.1 -44.7 -44.9 9.1 20.7
Vdd=28V, Idq=80mA
• PLD1.5-W
• Mature Sample= July, 2013
• Launch = Dec, 2013
Across from 720MHz to 2690MHz
►P-1>40dBm
►Gain>18.5dB
2496-2690MHz
Broadband
High Gain
Low Cost
TM
External Use 15
AFT20S015N
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Adj-L
(dBc)
Adj-U
(dBc)
PAR
(dB)
Eff
(%)
1805 35.8 18.2 -35.6 -35.2 7.4 32.8
1845 35.8 18.2 -35 -34.5 7.1 33.5
1880 35.8 18.0 -34.1 -34.2 7.0 33.9
2300 35.5 17.2 -35.6 -35.6 7.2 31.7
2350 35.5 17.2 -35.2 -34.9 7.1 31.6
2400 35.5 17.2 -34.4 -33.9 7.0 31.6
2496 35.5 16.1 -36.44 -36.04 7.3 29.1
2530 35.5 16.3 -35.55 -36.1 7.2 30.0
2580 35.5 16.4 -34.79 -34.92 7.1 30.3
2630 35.5 16.5 -34.51 -34.94 6.9 31.2
2690 35.5 16.4 -33.86 -33.69 6.6 31.2
Vdd=28V, Idq=120mA
• TO- 270-2
• Launch = April, 2013
Across from 1805MHz to 2690MHz
►P-3>42dBm
►Gain>16dB with very excellent gain flatness
Broadband
High Gain
Low Cost
TM
External Use 16
RF Cellular 2.6GHz LTE Line-up
20W 2496-2690MHz PA Solution
MMZ25332B MMDS25254H AFT27S006N AFT26H160
• 2-stage driver amplifier
• 5V GaAs
• QFN 3x3
• 33 dBm peak power
• Gain: 27 dB
• Advanced Doherty
Alignment Module
• 5V
• QFN 6x6
• Doherty coupler
together with digitally
selectable phase
shifters and step
attenuators for
improved Doherty
performance
• Wideband transistor
• 28V LDMOS
• PLD-1.5W package
• 6W peak output power
• Average power of
28.8dBm
• Gain: 21 dB
• Drain Efficiency: 21%
• Asymmetric in-package
Doherty device
• 28V LDMOS
• NI-880XS-4L4S
package
• 160W peak power
• Average power of 32W
• Gain: 15 dB
• Drain Efficiency: 45.5%
Doherty
Final Driver ADAM
Pre-Driv
er
TM
External Use 17
Designing with Freescale
Tailored live, hands-on
training in a city near you
2014 seminar topics include
• QorIQ product family update
• Kinetis K, L, E, V series MCU product training
freescale.com/DwF
TM
© 2014 Freescale Semiconductor, Inc. | External Use
www.Freescale.com