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Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group
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Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Dec 19, 2015

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Page 1: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Structure-Function Relationships in Organic Field Effect Transistors

Kirsten ParrattSummer 2011

Loo Group

Page 2: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Why Organic Semiconductors?

An alternative to inorganic electronics:• Easier manufacturing• Low temperature processing• Solution processing • Lower costs• Flexible substrates

What are Organic Semiconductors?

What advantages do they offer?

Image:s http://www.konarka.com/index.php/power-plastic/about-power-plastic/http://www.physorg.com/news/2011-02-carbon-nanotube-transistors-inexpensive-flexible.html

Page 3: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

How it works-Physical

Silicon

Silicon OxideActive Layer

Gold Contacts

-60 -40 -20 0 20 40

0

1x10-3

2x10-3

3x10-3

4x10-3

5x10-3

6x10-3

7x10-3

[IS

D]1/

2 (A1/

2)

Gate Voltage (V)

Page 4: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Devices

SS

Si

Si

SS

Si

Si

Cl Cl

TesADT

Cl-TesADT

Processing Steps:•Weigh out compounds•Dissolve in solution•Clean SiO2 wafer•Spincast/dropcast onto substrate•Evaporate gold contacts

Page 5: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Device Results

0 20 40 60 80 10010-8

10-7

10-6

10-5

10-4

10-3

10-2

10-1M

ob

ilit

y (

cm

2 /Vs

)

%ClTesADT

Page 6: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

AFM

0 mol%62.5 mol% 100 mol%

50 mol%

0 20 40 60 80 1001E-8

1E-7

1E-6

1E-5

1E-4

1E-3

0.01

0.1

Mo

bil

ity

(c

m^

2/V

s)

%ClTesADT

Page 7: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

DSC

0.0 12.5 25.0 37.5 50.0 62.5 75.0 87.5 100.0120

140

160

180

200

220

240

260

280

Me

ltin

g P

oin

t (o

C)

%ClTesADT

Page 8: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Eutectic Grain Boundaries

Page 9: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Conclusion

• At 62.5% ClTesADT and 37.5%TesADT, a eutectic point forms

• This eutectic point has the highest intermixing and therefore the greatest grain connectivity

• As a result, OFETs with this molecular structure have higher hole mobility and function better

• Future work could involve other TesADT derivatives

Page 10: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

Acknowledgements

• Professor Loo• Stephanie Lee• Loo Lab Group• Princeton Environmental Institute

Page 11: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.
Page 12: Structure-Function Relationships in Organic Field Effect Transistors Kirsten Parratt Summer 2011 Loo Group.

qxy

(A-1)

q z (A

-1)

0.6 0.8 1 1.2 1.4 1.6 1.8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

qxy (A-1)q z

(A-1

)

0.6 0.8 1 1.2 1.4 1.6 1.8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

qxy

(A-1)

q z (A

-1)

0.6 0.8 1 1.2 1.4 1.6 1.8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

qxy

(A-1)

q z (A

-1)

0.6 0.8 1 1.2 1.4 1.6 1.80

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

qxy

(A-1)

q z (A

-1)

0.6 0.8 1 1.2 1.4 1.6 1.8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

qxy

(A-1)

q z (A

-1)

0.6 0.8 1 1.2 1.4 1.6 1.8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

12.5mol% 37.5mol% 50mol%

62.5mol% 87.5mol% 100mol%

GIXD