Status of Hamamatsu Silicon Sen sors . Hara (Univ of Tsukuba) elivery leakage current at 150V & 350V number of defect channels wafer thickness & full depletion voltage bias resistance (sampling) Status of Institute tests implant tests Coupling capacitors 24-hr leakage current stability SCT@Prague , June 2001
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Status of Hamamatsu Silicon Sensors K. Hara (Univ of Tsukuba) Delivery leakage current at 150V & 350V number of defect channels wafer thickness & full.
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Status of Hamamatsu Silicon Sensors
K. Hara (Univ of Tsukuba)
Delivery leakage current at 150V & 350V number of defect channels wafer thickness & full depletion voltage bias resistance (sampling) Status of Institute tests implant tests Coupling capacitors 24-hr leakage current stability