All Rights Reserved Copyright (c) Bee Technologies Inc. 2005 Device Modeling Report Bee Technologies Inc. COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM5H08TU MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Schottky Barrier Diode (Professional)
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SPICE MODEL of SSM5H08TU (Professional+BDP+SBDP Model) in SPICE PARK
SPICE MODEL of SSM5H08TU (Professional+BDP+SBDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM5H08TU MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Schottky Barrier Diode (Professional)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Transconductance Characteristic Circuit Simulation Result
Comparison table
ID(A) gfs
Error (%) Measurement Simulation
0.50 2.40 2.39 -0.46
1.00 3.37 3.34 -0.92
2.00 4.70 4.64 -1.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V1
0V 1.0V 2.0V 3.0V 4.0V
I(V2)
10uA
100uA
1.0mA
10mA
100mA
1.0A
10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
R1
100M EG
V33Vdc
OPEN
OPEN
0
OPEN
V110Vdc
V2
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
0.01 1.13 1.14 0.80
0.02 1.16 1.17 0.69
0.05 1.20 1.21 0.83
0.10 1.26 1.27 0.79
0.20 1.35 1.35 0.00
0.50 1.49 1.50 0.67
1.00 1.67 1.68 0.60
2.00 1.92 1.94 1.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005