All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 Device Modeling Report Bee Technologies Inc. COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: MP4212 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode REMARK: N&P Channel Model
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SPICE MODEL of MP4212 (Standard+BDS N&P Model) in SPICE PARK
SPICE MODEL of MP4212 (Standard+BDS N&P) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: MP4212 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode REMARK: N&P Channel Model
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
P-Channel Model
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
-0.500 1.800 1.810 0.556
-1.000 2.500 2.505 0.200
-2.000 3.500 3.500 0.000
-5.000 5.500 5.505 0.091
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Open
R1
100MEG
V20Vdc
V1
-10Vdc
Open
U17
MP4212
0
V3
0Vdc
0
V_V2
0V -2V -4V -6V -8V -10V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
-1.000 -2.500 -2.511 0.440
-2.000 -2.850 -2.844 -0.211
-4.000 -3.300 -3.324 0.727
-6.000 -3.700 -3.695 -0.135
-8.000 -4.000 -4.004 0.100
-10.000 -4.300 -4.291 -0.209
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006