BZX84C2V4TS-BZX84C39TS ZENER DIODE FEATURES Planar Die Construction 200mW Power Dissipation Zener Voltages from 2.4V - 39V Three isolated diode elements in single Ultra-Small Surface Mount Package Maximum Ratings(Ta=25℃ unless otherwise specified) Characteristic Symbol Value Unit Forward Voltage @ I F = 10mA V F 0.9 V Power Dissipation(Note 1) PD 200 mW Thermal Resistance from Junction to Ambient (Note 1) R θJA 625 ℃/W Operation Junction and Storage Temperature Range ℃ SOT-363 T J ,T stg -55 ~ +150 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes 1 Rev. - 2.0 www.jscj-elec.com
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SOT-363 Plastic-Encapsulate Diodes SOT-363 … · BZX84C2V4TS-BZX84C39TS ZENER DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V
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BZX84C2V4TS-BZX84C39TS ZENER DIODE
FEATURES Planar Die Construction
200mW Power Dissipation
Zener Voltages from 2.4V - 39V
Three isolated diode elements in single Ultra-Small Surface Mount Package
Maximum Ratings(Ta=25 unless otherwise specified) Characteristic Symbol Value Unit
Forward Voltage @ IF = 10mA VF 0.9 VPower Dissipation(Note 1) PD 200 mWThermal Resistance from Junction to Ambient (Note 1) RθJA 625 /W Operation Junction and Storage Temperature Range
SOT-363
TJ,Tstg -55 ~ +150
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
1 Rev. - 2.0www.jscj-elec.com
Zener Voltage Range (Note 2) Maximum Zener Impedance
Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Short duration pulse test used to minimize self-heating effect.3. f = 1kHz.
Symbol Dimensions In Millimeters Dimensions In Inches
0.650 TYP 0.026 TYP
4 Rev. - 2.0www.jscj-elec.com
NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.