Solar Power Program Clara Paola Murcia S. BS in Electrical Engineering (Universidad de Los Andes) Concentration in Power Systems / Minor in BA Semiconductor processing skills: - Photolithography - Automated wafer dicing (and manual scribing) - Wet and dry etching (isotropic, anisotropic) of silicon and dielectric materials - E-beam and thermal material deposition - Standard semiconductor cleaning processes - Phosphorous diffusion (POCl 3 ) - Wet and dry thermal oxide growth - Reactive ion etching (RIE) - Rapid thermal processing (RTP) - Wire bonding. - Knowledgeable with safety systems, procedures and regulations. Device testing and characterization skills: - Sheet resistance testing with four point probe - Current-voltage characterization of fundamental devices - Carrier lifetime and voltage measurement with quasi-steady state photoconductance (QSSPC) decay - Scanning electron microscopy (SEM) - Outdoor testing of photovoltaic cells - 3D interference microscopy (Zygo) - External quantum efficiency (EQE) - Thin film characterization with spectroscopical ellipsometry (UVISEL) - Low temperature (77K and 4K) testing of emitting devices using Fourier transform infrared spectroscopy (FTIR ) Background and Skills
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Solar Power Program Clara Paola Murcia S. BS in Electrical Engineering (Universidad de Los Andes) Concentration in Power Systems / Minor in BA Semiconductor.
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Solar Power Program Clara Paola Murcia S.
BS in Electrical Engineering (Universidad de Los Andes)Concentration in Power Systems / Minor in BA
Semiconductor processing skills: - Photolithography- Automated wafer dicing (and manual scribing)- Wet and dry etching (isotropic, anisotropic) of silicon and dielectric materials- E-beam and thermal material deposition- Standard semiconductor cleaning processes- Phosphorous diffusion (POCl 3)- Wet and dry thermal oxide growth- Reactive ion etching (RIE)- Rapid thermal processing (RTP)- Wire bonding. - Knowledgeable with safety systems, procedures and regulations. Device testing and characterization skills:- Sheet resistance testing with four point probe- Current-voltage characterization of fundamental devices- Carrier lifetime and voltage measurement with quasi-steady state photoconductance (QSSPC) decay- Scanning electron microscopy (SEM)- Outdoor testing of photovoltaic cells- 3D interference microscopy (Zygo)- External quantum efficiency (EQE)- Thin film characterization with spectroscopical ellipsometry (UVISEL)- Low temperature (77K and 4K) testing of emitting devices using Fourier transform infrared spectroscopy (FTIR )
Background and Skills
Solar Power Program
Lack of emitters in the THz regime. Previous results reported edge
emission. Top emitters are easily integrated to other optoelectronic
devices
THz emission from p-doped Si (MS)Motivation
New sources and materials need to be developed and characterized in
the “terahertz gap” 3 to 30
Solar Power Program
• IQE is applied to measure critical thin Si solar cell parameters
• Design rules for high performance developed and demonstrated
Best Parameters (18um solar cell):
• Voc: 631mV• Jsc (1 pass): 22mA/cm2
• FF:81.7%
Thin silicon solar cells can be higher efficiency than thick silicon with the same materials
properties due to reduced bulk recombination that leads to higher voltages
Thin Silicon Solar Cells
High Performance Thin Si Solar Cells (PhD)
Reduced bulk volume (Reduced Recombination)•Light Trapping•Low front and back surface recombination
High Open Circuit Voltage
High Efficiency
PhD Students C. Paola Murcia and Ruiying Hao. Epitaxial layers grown by collaborative research with AmberWave Inc.
Thin Silicon Solar Cell Results
Planar Thin Silicon Solar Cells
Contact -Reflector
Solar Cell
PassivationLight Trapping
Ideal Thin Si Solar Cell
• A high performance thin silicon solar cell is based on a high open circuit voltage design .
• The light trapping consists of a back surface and reflector that can be independently optimized and a front surface texture and ARC
• The thin Si solar cell is grown on high quality material then transferred to a holding substrate.