SML resist - Processing Information Introduction SML resist has been specifically designed for electron beam lithography. It is a polymer that can be processed in exactly the same way as other polymer resists such as PMMA or ZEP. Typical Processing Conditions The processes outlined below are our standard processes, given as a guide only. Pilot work should be carried out to optimise the exposure paramters for your system. Substrate preparation Solvent clean with acetone and IPA. SML has excellent adhesion to most substrates so HMDS is not generally required. Spin coating See spin curves in the product information document. Baking Hot plate at 180°C for 120 - 180 seconds. For more information or to enquire about products, please call or email us. +44 (0)1625 704465 [email protected]www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG Guidline exposure at 30 kV Tungsten Thermal Field Emission Single pixel line clearing dose 1000-3000 pC/cm 1000-2000 pC/cm Area clearing dose 200-500 µC/cm 2 200-500 µC/cm 2 Developer IPA:H 2 O (7:3) for 30 seconds, followed by IPA rinse for 15 seconds. Hard-bake Convection oven at 80°C for 30 minutes. Stripper Acetone Guideline exposure at 100 kV Thermal Field Emission Single pixel line clearing dose 1000-2000 pC/cm Area clearing dose 200-500 µC/cm 2
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SML resist - Processing Information
IntroductionSML resist has been specifically designed for electron beam lithography. It is a polymer that can be processed in exactly the same way as other polymer resists such as PMMA or ZEP.
Typical Processing ConditionsThe processes outlined below are our standard processes, given as a guide only. Pilot work should be carried out to optimise the exposure paramters for your system.
Substrate preparation Solvent clean with acetone and IPA. SML has excellent adhesion to most substrates so HMDS is not generally required.
Spin coating See spin curves in the product information document.
Baking Hot plate at 180°C for 120 - 180 seconds.
For more information or to enquire about products, please call or email us.
+44 (0)1625 704465 [email protected] www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG
Guidline exposure at 30 kV
Tungsten Thermal Field Emission
Single pixel line clearing dose 1000-3000 pC/cm 1000-2000 pC/cm
Area clearing dose 200-500 µC/cm2 200-500 µC/cm2
Developer IPA:H2O (7:3) for 30 seconds, followed by IPA rinse for 15 seconds.
Hard-bake Convection oven at 80°C for 30 minutes.
Stripper Acetone
Guideline exposure at 100 kV
Thermal Field Emission
Single pixel line clearing dose 1000-2000 pC/cm
Area clearing dose 200-500 µC/cm2
SML50
Step size: 5nm
Current: 3.7nA
Dose: 860μC/cm2
Line width: 9nm
Pitch: 40nm
Developer: MIBK:IPA (1:3) for 30 seconds followed by IPA rinse for 15 seconds
SML50
Step size: 5nm
Current: 260pA
Dose: 1180μC/cm2
Line width: 6nm
Pitch: 35nm
Developer: IPA:H2O (7:3) for 30 seconds followed by IPA rinse for 15 seconds
www.emresist.com
100 kV Exposure Parameters
Please note that the best results (aspect ratio and resolution) are generally achieved when a relatively low beam current is used.